Intel has divested its entire stake in Arm Holdings during the second quarter, raising approximately $147 million. Alongside this, Intel sold its stake in cybersecurity firm ZeroFox and reduced its holdings in Astera Labs, all as part of a broader effort to manage costs and recover cash amid significant financial challenges.
The sale of Intel's 1.18 million shares in Arm Holdings, as reported in a recent SEC filing, comes at a time when the company is struggling with substantial financial losses. Despite the $147 million generated from the sale, Intel reported a $120 million net loss on its equity investments for the quarter, which is a part of a larger $1.6 billion loss that Intel faced during this period.
In addition to selling its stake in Arm, Intel also exited its investment in ZeroFox and reduced its involvement with Astera Labs, a company known for developing connectivity platforms for enterprise hardware. These moves are in line with Intel's strategy to reduce costs and stabilize its financial position as it faces ongoing market challenges.
Despite the divestment, Intel's past investment in Arm was likely driven by strategic considerations. Arm Holdings is a significant force in the semiconductor industry, with its designs powering most mobile devices, and, for obvious reasons, Intel would like to address these. Intel and Arm are also collaborating on datacenter platforms tailored for Intel's 18A process technology. Additionally, Arm might view Intel as a potential licensee for its technologies and a valuable partner for other companies that license Arm's designs.
Intel's investment in Astera Labs was also a strategic one as the company probably wanted to secure steady supply of smart retimers, smart cable modems, and CXL memory controller, which are used in volumes in datacenters and Intel is certainly interested in selling as many datacenter CPUs as possible.
Intel's financial struggles were highlighted earlier this month when the company released a disappointing earnings report, which led to a 33% drop in its stock value, erasing billions of dollars of capitalization. To counter these difficulties, Intel announced plans to cut 15,000 jobs and implement other expense reductions. The company has also suspended its dividend, signaling the depth of its efforts to conserve cash and focus on recovery. When it comes to divestment of Arm stock, the need for immediate financial stabilization has presumably taken precedence, leading to the decision.
CPUsStandard CPU coolers, while adequate for managing basic thermal loads, often fall short in terms of noise reduction and superior cooling efficiency. This limitation drives advanced users and system builders to seek aftermarket solutions tailored to their specific needs. The high-end aftermarket cooler market is highly competitive, with manufacturers striving to offer products with exceptional performance.
Endorfy, previously known as SilentiumPC, is a Polish manufacturer that has undergone a significant transformation to expand its presence in global markets. The brand is known for delivering high-performance cooling solutions with a strong focus on balancing efficiency and affordability. By rebranding as Endorfy, the company aims to enter premium market segments while continuing to offer reliable, high-quality cooling products.
SilentiumPC became very popular in the value/mainstream segments of the PC market with their products, the spearhead of which probably was the Fera 5 cooler that we reviewed a little over two years ago and had a remarkable value for money. Today’s review places Endorfy’s largest CPU cooler, the Fortis 5 Dual Fan, on our laboratory test bench. The Fortis 5 is the largest CPU air cooler the company currently offers and is significantly more expensive than the Fera 5, yet it still is a single-tower cooler that strives to strike a balance between value, compatibility, and performance.
Cases/Cooling/PSUsUnder the CHIPS & Science Act, the U.S. government provided tens of billions of dollars in grants and loans to the world's leading maker of chips, such as Intel, Samsung, and TSMC, which will significantly expand the country's semiconductor production industry in the coming years. However, most chips are typically tested, assembled, and packaged in Asia, which has left the American supply chain incomplete. Addressing this last gap in the government's domestic chip production plans, these past couple of weeks the U.S. government signed memorandums of understanding worth about $1.5 billion with Amkor and SK hynix to support their efforts to build chip packaging facilities in the U.S.
Amkor plans to build a $2 billion advanced packaging facility near Peoria, Arizona, to test and assemble chips produced by TSMC at its Fab 21 near Phoenix, Arizona. The company signed a MOU that offers $400 million in direct funding and access to $200 million in loans under the CHIPS & Science Act. In addition, the company plans to take advantage of a 25% investment tax credit on eligible capital expenditures.
Set to be strategically positioned near TSMC's upcoming Fab 21 complex in Arizona, Amkor's Peoria facility will occupy 55 acres and, when fully completed, will feature over 500,000 square feet (46,451 square meters) of cleanroom space, more than twice the size of Amkor's advanced packaging site in Vietnam. Although the company has not disclosed the exact capacity or the specific technologies the facility will support, it is expected to cater to a wide range of industries, including automotive, high-performance computing, and mobile technologies. This suggests the new plant will offer diverse packaging solutions, including traditional, 2.5D, and 3D technologies.
Amkor has collaborated extensively with Apple on the vision and initial setup of the Peoria facility, as Apple is slated to be the facility's first and largest customer, marking a significant commitment from the tech giant. This partnership highlights the importance of the new facility in reinforcing the U.S. semiconductor supply chain and positioning Amkor as a key partner for companies relying on TSMC's manufacturing capabilities. The project is expected to generate around 2,000 jobs and is scheduled to begin operations in 2027.
This week SK hynix also signed a preliminary agreement with the U.S. government to receive up to $450 million in direct funding and $500 million in loans to build an advanced memory packaging facility in West Lafayette, Indiana.
The proposed facility is scheduled to begin operations in 2028, which means that it will assemble HBM4 or HBM4E memory. Meanwhile, DRAM devices for high bandwidth memory (HBM) stacks will still be produced in South Korea. Nonetheless, packing finished HBM4/HBM4E in the U.S. and possibly integrating these memory modules with high-end processors is a big deal.
In addition to building its packaging plant, SK hynix plans to collaborate with Purdue University and other local research institutions to advance semiconductor technology and packaging innovations. This partnership is intended to bolster research and development in the region, positioning the facility as a hub for AI technology and skilled employment.
SemiconductorsThe CXL consortium has had a regular presence at FMS (which rechristened itself from 'Flash Memory Summit' to the 'Future of Memory and Storage' this year). Back at FMS 2022, the company had announced v3.0 of the CXL specifications. This was followed by CXL 3.1's introduction at Supercomputing 2023. Having started off as a host to device interconnect standard, it had slowly subsumed other competing standards such as OpenCAPI and Gen-Z. As a result, the specifications started to encompass a wide variety of use-cases by building a protocol on top of the the ubiquitous PCIe expansion bus. The CXL consortium comprises of heavyweights such as AMD and Intel, as well as a large number of startup companies attempting to play in different segments on the device side. At FMS 2024, CXL had a prime position in the booth demos of many vendors.
The migration of server platforms from DDR4 to DDR5, along with the rise of workloads demanding large RAM capacity (but not particularly sensitive to either memory bandwidth or latency), has opened up memory expansion modules as one of the first set of widely available CXL devices. Over the last couple of years, we have had product announcements from Samsung and Micron in this area.
At FMS 2024, SK hynix was showing off their DDR5-based CMM-DDR5 CXL memory module with a 128 GB capacity. The company was also detailing their associated Heterogeneous Memory Software Development Kit (HMSDK) - a set of libraries and tools at both the kernel and user levels aimed at increasing the ease of use of CXL memory. This is achieved in part by considering the memory pyramid / hierarchy and relocating the data between the server's main memory (DRAM) and the CXL device based on usage frequency.
The CMM-DDR5 CXL memory module comes in the SDFF form-factor (E3.S 2T) with a PCIe 3.0 x8 host interface. The internal memory is based on 1α technology DRAM, and the device promises DDR5-class bandwidth and latency within a single NUMA hop. As these memory modules are meant to be used in datacenters and enterprises, the firmware includes features for RAS (reliability, availability, and serviceability) along with secure boot and other management features.
SK hynix was also demonstrating Niagara 2.0 - a hardware solution (currently based on FPGAs) to enable memory pooling and sharing - i.e, connecting multiple CXL memories to allow different hosts (CPUs and GPUs) to optimally share their capacity. The previous version only allowed capacity sharing, but the latest version enables sharing of data also. SK hynix had presented these solutions at the CXL DevCon 2024 earlier this year, but some progress seems to have been made in finalizing the specifications of the CMM-DDR5 at FMS 2024.
Micron had unveiled the CZ120 CXL Memory Expansion Module last year based on the Microchip SMC 2000 series CXL memory controller. At FMS 2024, Micron and Microchip had a demonstration of the module on a Granite Rapids server.
Additional insights into the SMC 2000 controller were also provided.
The CXL memory controller also incorporates DRAM die failure handling, and Microchip also provides diagnostics and debug tools to analyze failed modules. The memory controller also supports ECC, which forms part of the enterprise... Storage
Samsung had quietly launched its BM1743 enterprise QLC SSD last month with a hefty 61.44 TB SKU. At FMS 2024, the company had the even larger 122.88 TB version of that SSD on display, alongside a few recorded benchmarking sessions. Compared to the previous generation, the BM1743 comes with a 4.1x improvement in I/O performance, improvement in data retention, and a 45% improvement in power efficiency for sequential writes.
The 128 TB-class QLC SSD boasts of sequential read speeds of 7.5 GBps and write speeds of 3 GBps. Random reads come in at 1.6 M IOPS, while 16 KB random writes clock in at 45K IOPS. Based on the quoted random write access granularity, it appears that Samsung is using a 16 KB indirection unit (IU) to optimize flash management. This is similar to the strategy adopted by Solidigm with IUs larger than 4K in their high-capacity SSDs.
A recorded benchmark session on the company's PM9D3a 8-channel Gen 5 SSD was also on display.
The SSD family is being promoted as a mainstream option for datacenters, and boasts of sequential reads up to 12 GBps and writes up to 6.8 GBps. Random reads clock in at 2 M IOPS, and random writes at 400 K IOPS.
Available in multiple form-factors up to 32 TB (M.2 tops out at 2 TB), the drive's firmware includes optional support for flexible data placement (FDP) to help address the write amplification aspect.
The PM1753 is the current enterprise SSD flagship in Samsung's lineup. With support for 16 NAND channels and capacities up to 32 TB, this U.2 / E3.S SSD has advertised sequential read and write speeds of 14.8 GBps and 11 GBps respectively. Random reads and writes for 4 KB accesses are listed at 3.4 M and 600 K IOPS.
Samsung claims a 1.7x performance improvement and a 1.7x power efficiency improvement over the previous generation (PM1743), making this TLC SSD suitable for AI servers.
The 9th Gen. V-NAND wafer was also available for viewing, though photography was prohibited. Mass production of this flash memory began in April 2024.
StorageWhen Western Digital introduced its Ultrastar DC SN861 SSDs earlier this year, the company did not disclose which controller it used for these drives, which made many observers presume that WD was using an in-house controller. But a recent teardown of the drive shows that is not the case; instead, the company is using a controller from Fadu, a South Korean company founded in 2015 that specializes on enterprise-grade turnkey SSD solutions.
The Western Digital Ultrastar DC SN861 SSD is aimed at performance-hungry hyperscale datacenters and enterprise customers which are adopting PCIe Gen5 storage devices these days. And, as uncovered in photos from a recent Storage Review article, the drive is based on Fadu's FC5161 NVMe 2.0-compliant controller. The FC5161 utilizes 16 NAND channels supporting an ONFi 5.0 2400 MT/s interface, and features a combination of enterprise-grade capabilities (OCP Cloud Spec 2.0, SR-IOV, up to 512 name spaces for ZNS support, flexible data placement, NVMe-MI 1.2, advanced security, telemetry, power loss protection) not available on other off-the-shelf controllers – or on any previous Western Digital controllers.
The Ultrastar DC SN861 SSD offers sequential read speeds up to 13.7 GB/s as well as sequential write speeds up to 7.5 GB/s. As for random performance, it boasts with an up to 3.3 million random 4K read IOPS and up to 0.8 million random 4K write IOPS. The drives are available in capacities between 1.6 TB and 7.68 TB with one or three drive writes per day (DWPD) over five years rating as well as in U.2 and E1.S form-factors.
While the two form factors of the SN861 share a similar technical design, Western Digital has tailored each version for distinct workloads: the E1.S supports FDP and performance enhancements specifically for cloud environments. By contrast, the U.2 model is geared towards high-performance enterprise tasks and emerging applications like AI.
Without any doubts, Western Digital's Ultrastar DC SN861 is a feature-rich high-performance enterprise-grade SSD. It has another distinctive feature: a 5W idle power consumption, which is rather low by the standards of enterprise-grade drives (e.g., it is 1W lower compared to the SN840). While the difference with predecessors may be just 1W, hyperscalers deploy thousands of drives and for their TCO every watt counts.
Western Digital's Ultrastar DC SN861 SSDs are now available for purchase to select customers (such as Meta) and to interested parties. Prices are unknown, but they will depend on such factors as volumes.
Sources: Fadu, Storage Review
StorageKioxia's booth at FMS 2024 was a busy one with multiple technology demonstrations keeping visitors occupied. A walk-through of the BiCS 8 manufacturing process was the first to grab my attention. Kioxia and Western Digital announced the sampling of BiCS 8 in March 2023. We had touched briefly upon its CMOS Bonded Array (CBA) scheme in our coverage of Kioxial's 2Tb QLC NAND device and coverage of Western Digital's 128 TB QLC enterprise SSD proof-of-concept demonstration. At Kioxia's booth, we got more insights.
Traditionally, fabrication of flash chips involved placement of the associate logic circuitry (CMOS process) around the periphery of the flash array. The process then moved on to putting the CMOS under the cell array, but the wafer development process was serialized with the CMOS logic getting fabricated first followed by the cell array on top. However, this has some challenges because the cell array requires a high-temperature processing step to ensure higher reliability that can be detrimental to the health of the CMOS logic. Thanks to recent advancements in wafer bonding techniques, the new CBA process allows the CMOS wafer and cell array wafer to be processed independently in parallel and then pieced together, as shown in the models above.
The BiCS 8 3D NAND incorporates 218 layers, compared to 112 layers in BiCS 5 and 162 layers in BiCS 6. The company decided to skip over BiCS 7 (or, rather, it was probably a short-lived generation meant as an internal test vehicle). The generation retains the four-plane charge trap structure of BiCS 6. In its TLC avatar, it is available as a 1 Tbit device. The QLC version is available in two capacities - 1 Tbit and 2 Tbit.
Kioxia also noted that while the number of layers (218) doesn't compare favorably with the latest layer counts from the competition, its lateral scaling / cell shrinkage has enabled it to be competitive in terms of bit density as well as operating speeds (3200 MT/s). For reference, the latest shipping NAND from Micron - the G9 - has 276 layers with a bit density in TLC mode of 21 Gbit/mm2, and operates at up to 3600 MT/s. However, its 232L NAND operates only up to 2400 MT/s and has a bit density of 14.6 Gbit/mm2.
It must be noted that the CBA hybrid bonding process has advantages over the current processes used by other vendors - including Micron's CMOS under array (CuA) and SK hynix's 4D PUC (periphery-under-chip) developed in the late 2010s. It is expected that other NAND vendors will also move eventually to some variant of the hybrid bonding scheme used by Kioxia.
StorageOne of the core challenges that Rapidus will face when it kicks off volume production of chips on its 2nm-class process technology in 2027 is lining up customers. With Intel, Samsung, and TSMC all slated to offer their own 2nm-class nodes by that time, Rapidus will need some kind of advantage to attract customers away from its more established rivals. To that end, the company thinks they've found their edge: fully automated packaging that will allow for shorter chip lead times than manned packaging operations.
In an interview with Nikkei, Rapidus' president, Atsuyoshi Koike, outlined the company's vision to use advanced packaging as a competitive edge for the new fab. The Hokkaido facility, which is currently under construction and is expecting to begin equipment installation this December, is already slated to both produce chips and offer advanced packaging services within the same facility, an industry first. But ultimately, Rapidus biggest plan to differentiate itself is by automating the back-end fab processes (chip packaging) to provide significantly faster turnaround times.
Rapidus is targetting back-end production in particular as, compared to front-end (lithography) production, back-end production still heavily relies on human labor. No other advanced packaging fab has fully automated the process thus far, which provides for a degree of flexibility, but slows throughput. But with automation in place to handle this aspect of chip production, Rapidus would be able to increase chip packaging efficiency and speed, which is crucial as chip assembly tasks become more complex. Rapidus is also collaborating with multiple Japanese suppliers to source materials for back-end production.
"In the past, Japanese chipmakers tried to keep their technology development exclusively in-house, which pushed up development costs and made them less competitive," Koike told Nikkei. "[Rapidus plans to] open up technology that should be standardized, bringing down costs, while handling important technology in-house."
Financially, Rapidus faces a significant challenge, needing a total of ¥5 trillion ($35 billion) by the time mass production starts in 2027. The company estimates that ¥2 trillion will be required by 2025 for prototype production. While the Japanese government has provided ¥920 billion in aid, Rapidus still needs to secure substantial funding from private investors.
Due to its lack of track record and experience of chip production as. well as limited visibility for success, Rapidus is finding it difficult to attract private financing. The company is in discussions with the government to make it easier to raise capital, including potential loan guarantees, and is hopeful that new legislation will assist in this effort.
SemiconductorsIt is with great sadness that I find myself penning the hardest news post I’ve ever needed to write here at AnandTech. After over 27 years of covering the wide – and wild – world of computing hardware, today is AnandTech’s final day of publication.
For better or worse, we’ve reached the end of a long journey – one that started with a review of an AMD processor, and has ended with the review of an AMD processor. It’s fittingly poetic, but it is also a testament to the fact that we’ve spent the last 27 years doing what we love, covering the chips that are the lifeblood of the computing industry.
A lot of things have changed in the last quarter-century – in 1997 NVIDIA had yet to even coin the term “GPU” – and we’ve been fortunate to watch the world of hardware continue to evolve over the time period. We’ve gone from boxy desktop computers and laptops that today we’d charitably classify as portable desktops, to pocket computers where even the cheapest budget device puts the fastest PC of 1997 to shame.
The years have also brought some monumental changes to the world of publishing. AnandTech was hardly the first hardware enthusiast website, nor will we be the last. But we were fortunate to thrive in the past couple of decades, when so many of our peers did not, thanks to a combination of hard work, strategic investments in people and products, even more hard work, and the support of our many friends, colleagues, and readers.
Still, few things last forever, and the market for written tech journalism is not what it once was – nor will it ever be again. So, the time has come for AnandTech to wrap up its work, and let the next generation of tech journalists take their place within the zeitgeist.
It has been my immense privilege to write for AnandTech for the past 19 years – and to manage it as its editor-in-chief for the past decade. And while I carry more than a bit of remorse in being AnandTech’s final boss, I can at least take pride in everything we’ve accomplished over the years, whether it’s lauding some legendary products, writing technology primers that still remain relevant today, or watching new stars rise in expected places. There is still more that I had wanted AnandTech to do, but after 21,500 articles, this was a good start.
And while the AnandTech staff is riding off into the sunset, I am happy to report that the site itself won’t be going anywhere for a while. Our publisher, Future PLC, will be keeping the AnandTech website and its many articles live indefinitely. So that all of the content we’ve created over the years remains accessible and citable. Even without new articles to add to the collection, I expect that many of the things we’ve written over the past couple of decades will remain relevant for years to come – and remain accessible just as long.
The AnandTech Forums will also continue to be operated by Future’s community team and our dedicated troop of moderators. With forum threads going back to 1999 (and some active members just as long), the forums have a history almost as long and as storied as AnandTech itself (wounded monitor children, anyone?). So even when AnandTech is no longer publishing articles, we’ll still have a place for everyone to talk about the latest in technology – and have those discussions last longer than 48 hours.
Finally, for everyone who still needs their technical writing fix, our formidable opposition of the last 27 years and fellow Future brand, Tom’s Hardware, is continuing to cover the world of technology. There are a couple of familiar AnandTech faces already over there providing their accumulated expertise, and the site will continue doing its best to provide a written take on technology news.
As I look back on everything AnandTech has accomplished over the past 27 years, there are more than a few people, groups, and companies that I would like to thank on behalf of both myself and AnandTech as a whole.
First and foremost, I cannot thank enough all the editors who have worked for AnandTech over the years. T... Site Updates
It is with great sadness that I find myself penning the hardest news post I’ve ever needed to write here at AnandTech. After over 27 years of covering the wide – and wild – world of computing hardware, today is AnandTech’s final day of publication.
For better or worse, we’ve reached the end of a long journey – one that started with a review of an AMD processor, and has ended with the review of an AMD processor. It’s fittingly poetic, but it is also a testament to the fact that we’ve spent the last 27 years doing what we love, covering the chips that are the lifeblood of the computing industry.
A lot of things have changed in the last quarter-century – in 1997 NVIDIA had yet to even coin the term “GPU” – and we’ve been fortunate to watch the world of hardware continue to evolve over the time period. We’ve gone from boxy desktop computers and laptops that today we’d charitably classify as portable desktops, to pocket computers where even the cheapest budget device puts the fastest PC of 1997 to shame.
The years have also brought some monumental changes to the world of publishing. AnandTech was hardly the first hardware enthusiast website, nor will we be the last. But we were fortunate to thrive in the past couple of decades, when so many of our peers did not, thanks to a combination of hard work, strategic investments in people and products, even more hard work, and the support of our many friends, colleagues, and readers.
Still, few things last forever, and the market for written tech journalism is not what it once was – nor will it ever be again. So, the time has come for AnandTech to wrap up its work, and let the next generation of tech journalists take their place within the zeitgeist.
It has been my immense privilege to write for AnandTech for the past 19 years – and to manage it as its editor-in-chief for the past decade. And while I carry more than a bit of remorse in being AnandTech’s final boss, I can at least take pride in everything we’ve accomplished over the years, whether it’s lauding some legendary products, writing technology primers that still remain relevant today, or watching new stars rise in expected places. There is still more that I had wanted AnandTech to do, but after 21,500 articles, this was a good start.
And while the AnandTech staff is riding off into the sunset, I am happy to report that the site itself won’t be going anywhere for a while. Our publisher, Future PLC, will be keeping the AnandTech website and its many articles live indefinitely. So that all of the content we’ve created over the years remains accessible and citable. Even without new articles to add to the collection, I expect that many of the things we’ve written over the past couple of decades will remain relevant for years to come – and remain accessible just as long.
The AnandTech Forums will also continue to be operated by Future’s community team and our dedicated troop of moderators. With forum threads going back to 1999 (and some active members just as long), the forums have a history almost as long and as storied as AnandTech itself (wounded monitor children, anyone?). So even when AnandTech is no longer publishing articles, we’ll still have a place for everyone to talk about the latest in technology – and have those discussions last longer than 48 hours.
Finally, for everyone who still needs their technical writing fix, our formidable opposition of the last 27 years and fellow Future brand, Tom’s Hardware, is continuing to cover the world of technology. There are a couple of familiar AnandTech faces already over there providing their accumulated expertise, and the site will continue doing its best to provide a written take on technology news.
As I look back on everything AnandTech has accomplished over the past 27 years, there are more than a few people, groups, and companies that I would like to thank on behalf of both myself and AnandTech as a whole.
First and foremost, I cannot thank enough all the editors who have worked for AnandTech over the years. T... Site Updates
Samsung had quietly launched its BM1743 enterprise QLC SSD last month with a hefty 61.44 TB SKU. At FMS 2024, the company had the even larger 122.88 TB version of that SSD on display, alongside a few recorded benchmarking sessions. Compared to the previous generation, the BM1743 comes with a 4.1x improvement in I/O performance, improvement in data retention, and a 45% improvement in power efficiency for sequential writes.
The 128 TB-class QLC SSD boasts of sequential read speeds of 7.5 GBps and write speeds of 3 GBps. Random reads come in at 1.6 M IOPS, while 16 KB random writes clock in at 45K IOPS. Based on the quoted random write access granularity, it appears that Samsung is using a 16 KB indirection unit (IU) to optimize flash management. This is similar to the strategy adopted by Solidigm with IUs larger than 4K in their high-capacity SSDs.
A recorded benchmark session on the company's PM9D3a 8-channel Gen 5 SSD was also on display.
The SSD family is being promoted as a mainstream option for datacenters, and boasts of sequential reads up to 12 GBps and writes up to 6.8 GBps. Random reads clock in at 2 M IOPS, and random writes at 400 K IOPS.
Available in multiple form-factors up to 32 TB (M.2 tops out at 2 TB), the drive's firmware includes optional support for flexible data placement (FDP) to help address the write amplification aspect.
The PM1753 is the current enterprise SSD flagship in Samsung's lineup. With support for 16 NAND channels and capacities up to 32 TB, this U.2 / E3.S SSD has advertised sequential read and write speeds of 14.8 GBps and 11 GBps respectively. Random reads and writes for 4 KB accesses are listed at 3.4 M and 600 K IOPS.
Samsung claims a 1.7x performance improvement and a 1.7x power efficiency improvement over the previous generation (PM1743), making this TLC SSD suitable for AI servers.
The 9th Gen. V-NAND wafer was also available for viewing, though photography was prohibited. Mass production of this flash memory began in April 2024.
StorageUnder the CHIPS & Science Act, the U.S. government provided tens of billions of dollars in grants and loans to the world's leading maker of chips, such as Intel, Samsung, and TSMC, which will significantly expand the country's semiconductor production industry in the coming years. However, most chips are typically tested, assembled, and packaged in Asia, which has left the American supply chain incomplete. Addressing this last gap in the government's domestic chip production plans, these past couple of weeks the U.S. government signed memorandums of understanding worth about $1.5 billion with Amkor and SK hynix to support their efforts to build chip packaging facilities in the U.S.
Amkor plans to build a $2 billion advanced packaging facility near Peoria, Arizona, to test and assemble chips produced by TSMC at its Fab 21 near Phoenix, Arizona. The company signed a MOU that offers $400 million in direct funding and access to $200 million in loans under the CHIPS & Science Act. In addition, the company plans to take advantage of a 25% investment tax credit on eligible capital expenditures.
Set to be strategically positioned near TSMC's upcoming Fab 21 complex in Arizona, Amkor's Peoria facility will occupy 55 acres and, when fully completed, will feature over 500,000 square feet (46,451 square meters) of cleanroom space, more than twice the size of Amkor's advanced packaging site in Vietnam. Although the company has not disclosed the exact capacity or the specific technologies the facility will support, it is expected to cater to a wide range of industries, including automotive, high-performance computing, and mobile technologies. This suggests the new plant will offer diverse packaging solutions, including traditional, 2.5D, and 3D technologies.
Amkor has collaborated extensively with Apple on the vision and initial setup of the Peoria facility, as Apple is slated to be the facility's first and largest customer, marking a significant commitment from the tech giant. This partnership highlights the importance of the new facility in reinforcing the U.S. semiconductor supply chain and positioning Amkor as a key partner for companies relying on TSMC's manufacturing capabilities. The project is expected to generate around 2,000 jobs and is scheduled to begin operations in 2027.
This week SK hynix also signed a preliminary agreement with the U.S. government to receive up to $450 million in direct funding and $500 million in loans to build an advanced memory packaging facility in West Lafayette, Indiana.
The proposed facility is scheduled to begin operations in 2028, which means that it will assemble HBM4 or HBM4E memory. Meanwhile, DRAM devices for high bandwidth memory (HBM) stacks will still be produced in South Korea. Nonetheless, packing finished HBM4/HBM4E in the U.S. and possibly integrating these memory modules with high-end processors is a big deal.
In addition to building its packaging plant, SK hynix plans to collaborate with Purdue University and other local research institutions to advance semiconductor technology and packaging innovations. This partnership is intended to bolster research and development in the region, positioning the facility as a hub for AI technology and skilled employment.
SemiconductorsThe CXL consortium has had a regular presence at FMS (which rechristened itself from 'Flash Memory Summit' to the 'Future of Memory and Storage' this year). Back at FMS 2022, the company had announced v3.0 of the CXL specifications. This was followed by CXL 3.1's introduction at Supercomputing 2023. Having started off as a host to device interconnect standard, it had slowly subsumed other competing standards such as OpenCAPI and Gen-Z. As a result, the specifications started to encompass a wide variety of use-cases by building a protocol on top of the the ubiquitous PCIe expansion bus. The CXL consortium comprises of heavyweights such as AMD and Intel, as well as a large number of startup companies attempting to play in different segments on the device side. At FMS 2024, CXL had a prime position in the booth demos of many vendors.
The migration of server platforms from DDR4 to DDR5, along with the rise of workloads demanding large RAM capacity (but not particularly sensitive to either memory bandwidth or latency), has opened up memory expansion modules as one of the first set of widely available CXL devices. Over the last couple of years, we have had product announcements from Samsung and Micron in this area.
At FMS 2024, SK hynix was showing off their DDR5-based CMM-DDR5 CXL memory module with a 128 GB capacity. The company was also detailing their associated Heterogeneous Memory Software Development Kit (HMSDK) - a set of libraries and tools at both the kernel and user levels aimed at increasing the ease of use of CXL memory. This is achieved in part by considering the memory pyramid / hierarchy and relocating the data between the server's main memory (DRAM) and the CXL device based on usage frequency.
The CMM-DDR5 CXL memory module comes in the SDFF form-factor (E3.S 2T) with a PCIe 3.0 x8 host interface. The internal memory is based on 1α technology DRAM, and the device promises DDR5-class bandwidth and latency within a single NUMA hop. As these memory modules are meant to be used in datacenters and enterprises, the firmware includes features for RAS (reliability, availability, and serviceability) along with secure boot and other management features.
SK hynix was also demonstrating Niagara 2.0 - a hardware solution (currently based on FPGAs) to enable memory pooling and sharing - i.e, connecting multiple CXL memories to allow different hosts (CPUs and GPUs) to optimally share their capacity. The previous version only allowed capacity sharing, but the latest version enables sharing of data also. SK hynix had presented these solutions at the CXL DevCon 2024 earlier this year, but some progress seems to have been made in finalizing the specifications of the CMM-DDR5 at FMS 2024.
Micron had unveiled the CZ120 CXL Memory Expansion Module last year based on the Microchip SMC 2000 series CXL memory controller. At FMS 2024, Micron and Microchip had a demonstration of the module on a Granite Rapids server.
Additional insights into the SMC 2000 controller were also provided.
The CXL memory controller also incorporates DRAM die failure handling, and Microchip also provides diagnostics and debug tools to analyze failed modules. The memory controller also supports ECC, which forms part of the enterprise... Storage
Kioxia's booth at FMS 2024 was a busy one with multiple technology demonstrations keeping visitors occupied. A walk-through of the BiCS 8 manufacturing process was the first to grab my attention. Kioxia and Western Digital announced the sampling of BiCS 8 in March 2023. We had touched briefly upon its CMOS Bonded Array (CBA) scheme in our coverage of Kioxial's 2Tb QLC NAND device and coverage of Western Digital's 128 TB QLC enterprise SSD proof-of-concept demonstration. At Kioxia's booth, we got more insights.
Traditionally, fabrication of flash chips involved placement of the associate logic circuitry (CMOS process) around the periphery of the flash array. The process then moved on to putting the CMOS under the cell array, but the wafer development process was serialized with the CMOS logic getting fabricated first followed by the cell array on top. However, this has some challenges because the cell array requires a high-temperature processing step to ensure higher reliability that can be detrimental to the health of the CMOS logic. Thanks to recent advancements in wafer bonding techniques, the new CBA process allows the CMOS wafer and cell array wafer to be processed independently in parallel and then pieced together, as shown in the models above.
The BiCS 8 3D NAND incorporates 218 layers, compared to 112 layers in BiCS 5 and 162 layers in BiCS 6. The company decided to skip over BiCS 7 (or, rather, it was probably a short-lived generation meant as an internal test vehicle). The generation retains the four-plane charge trap structure of BiCS 6. In its TLC avatar, it is available as a 1 Tbit device. The QLC version is available in two capacities - 1 Tbit and 2 Tbit.
Kioxia also noted that while the number of layers (218) doesn't compare favorably with the latest layer counts from the competition, its lateral scaling / cell shrinkage has enabled it to be competitive in terms of bit density as well as operating speeds (3200 MT/s). For reference, the latest shipping NAND from Micron - the G9 - has 276 layers with a bit density in TLC mode of 21 Gbit/mm2, and operates at up to 3600 MT/s. However, its 232L NAND operates only up to 2400 MT/s and has a bit density of 14.6 Gbit/mm2.
It must be noted that the CBA hybrid bonding process has advantages over the current processes used by other vendors - including Micron's CMOS under array (CuA) and SK hynix's 4D PUC (periphery-under-chip) developed in the late 2010s. It is expected that other NAND vendors will also move eventually to some variant of the hybrid bonding scheme used by Kioxia.
StorageStandard CPU coolers, while adequate for managing basic thermal loads, often fall short in terms of noise reduction and superior cooling efficiency. This limitation drives advanced users and system builders to seek aftermarket solutions tailored to their specific needs. The high-end aftermarket cooler market is highly competitive, with manufacturers striving to offer products with exceptional performance.
Endorfy, previously known as SilentiumPC, is a Polish manufacturer that has undergone a significant transformation to expand its presence in global markets. The brand is known for delivering high-performance cooling solutions with a strong focus on balancing efficiency and affordability. By rebranding as Endorfy, the company aims to enter premium market segments while continuing to offer reliable, high-quality cooling products.
SilentiumPC became very popular in the value/mainstream segments of the PC market with their products, the spearhead of which probably was the Fera 5 cooler that we reviewed a little over two years ago and had a remarkable value for money. Today’s review places Endorfy’s largest CPU cooler, the Fortis 5 Dual Fan, on our laboratory test bench. The Fortis 5 is the largest CPU air cooler the company currently offers and is significantly more expensive than the Fera 5, yet it still is a single-tower cooler that strives to strike a balance between value, compatibility, and performance.
Cases/Cooling/PSUsIntel has divested its entire stake in Arm Holdings during the second quarter, raising approximately $147 million. Alongside this, Intel sold its stake in cybersecurity firm ZeroFox and reduced its holdings in Astera Labs, all as part of a broader effort to manage costs and recover cash amid significant financial challenges.
The sale of Intel's 1.18 million shares in Arm Holdings, as reported in a recent SEC filing, comes at a time when the company is struggling with substantial financial losses. Despite the $147 million generated from the sale, Intel reported a $120 million net loss on its equity investments for the quarter, which is a part of a larger $1.6 billion loss that Intel faced during this period.
In addition to selling its stake in Arm, Intel also exited its investment in ZeroFox and reduced its involvement with Astera Labs, a company known for developing connectivity platforms for enterprise hardware. These moves are in line with Intel's strategy to reduce costs and stabilize its financial position as it faces ongoing market challenges.
Despite the divestment, Intel's past investment in Arm was likely driven by strategic considerations. Arm Holdings is a significant force in the semiconductor industry, with its designs powering most mobile devices, and, for obvious reasons, Intel would like to address these. Intel and Arm are also collaborating on datacenter platforms tailored for Intel's 18A process technology. Additionally, Arm might view Intel as a potential licensee for its technologies and a valuable partner for other companies that license Arm's designs.
Intel's investment in Astera Labs was also a strategic one as the company probably wanted to secure steady supply of smart retimers, smart cable modems, and CXL memory controller, which are used in volumes in datacenters and Intel is certainly interested in selling as many datacenter CPUs as possible.
Intel's financial struggles were highlighted earlier this month when the company released a disappointing earnings report, which led to a 33% drop in its stock value, erasing billions of dollars of capitalization. To counter these difficulties, Intel announced plans to cut 15,000 jobs and implement other expense reductions. The company has also suspended its dividend, signaling the depth of its efforts to conserve cash and focus on recovery. When it comes to divestment of Arm stock, the need for immediate financial stabilization has presumably taken precedence, leading to the decision.
CPUsIntel has divested its entire stake in Arm Holdings during the second quarter, raising approximately $147 million. Alongside this, Intel sold its stake in cybersecurity firm ZeroFox and reduced its holdings in Astera Labs, all as part of a broader effort to manage costs and recover cash amid significant financial challenges.
The sale of Intel's 1.18 million shares in Arm Holdings, as reported in a recent SEC filing, comes at a time when the company is struggling with substantial financial losses. Despite the $147 million generated from the sale, Intel reported a $120 million net loss on its equity investments for the quarter, which is a part of a larger $1.6 billion loss that Intel faced during this period.
In addition to selling its stake in Arm, Intel also exited its investment in ZeroFox and reduced its involvement with Astera Labs, a company known for developing connectivity platforms for enterprise hardware. These moves are in line with Intel's strategy to reduce costs and stabilize its financial position as it faces ongoing market challenges.
Despite the divestment, Intel's past investment in Arm was likely driven by strategic considerations. Arm Holdings is a significant force in the semiconductor industry, with its designs powering most mobile devices, and, for obvious reasons, Intel would like to address these. Intel and Arm are also collaborating on datacenter platforms tailored for Intel's 18A process technology. Additionally, Arm might view Intel as a potential licensee for its technologies and a valuable partner for other companies that license Arm's designs.
Intel's investment in Astera Labs was also a strategic one as the company probably wanted to secure steady supply of smart retimers, smart cable modems, and CXL memory controller, which are used in volumes in datacenters and Intel is certainly interested in selling as many datacenter CPUs as possible.
Intel's financial struggles were highlighted earlier this month when the company released a disappointing earnings report, which led to a 33% drop in its stock value, erasing billions of dollars of capitalization. To counter these difficulties, Intel announced plans to cut 15,000 jobs and implement other expense reductions. The company has also suspended its dividend, signaling the depth of its efforts to conserve cash and focus on recovery. When it comes to divestment of Arm stock, the need for immediate financial stabilization has presumably taken precedence, leading to the decision.
CPUsA few years back, the Japanese government's New Energy and Industrial Technology Development Organization (NEDO ) allocated funding for the development of green datacenter technologies. With the aim to obtain up to 40% savings in overall power consumption, several Japanese companies have been developing an optical interface for their enterprise SSDs. And at this year's FMS, Kioxia had their optical interface on display.
For this demonstration, Kioxia took its existing CM7 enterprise SSD and created an optical interface for it. A PCIe card with on-board optics developed by Kyocera is installed in the server slot. An optical interface allows data transfer over long distances (it was 40m in the demo, but Kioxia promises lengths of up to 100m for the cable in the future). This allows the storage to be kept in a separate room with minimal cooling requirements compared to the rack with the CPUs and GPUs. Disaggregation of different server components will become an option as very high throughput interfaces such as PCIe 7.0 (with 128 GT/s rates) become available.
The demonstration of the optical SSD showed a slight loss in IOPS performance, but a significant advantage in the latency metric over the shipping enterprise SSD behind a copper network link. Obviously, there are advantages in wiring requirements and signal integrity maintenance with optical links.
Being a proof-of-concept demonstration, we do see the requirement for an industry-standard approach if this were to gain adoption among different datacenter vendors. The PCI-SIG optical workgroup will need to get its act together soon to create a standards-based approach to this problem.
StorageSamsung had quietly launched its BM1743 enterprise QLC SSD last month with a hefty 61.44 TB SKU. At FMS 2024, the company had the even larger 122.88 TB version of that SSD on display, alongside a few recorded benchmarking sessions. Compared to the previous generation, the BM1743 comes with a 4.1x improvement in I/O performance, improvement in data retention, and a 45% improvement in power efficiency for sequential writes.
The 128 TB-class QLC SSD boasts of sequential read speeds of 7.5 GBps and write speeds of 3 GBps. Random reads come in at 1.6 M IOPS, while 16 KB random writes clock in at 45K IOPS. Based on the quoted random write access granularity, it appears that Samsung is using a 16 KB indirection unit (IU) to optimize flash management. This is similar to the strategy adopted by Solidigm with IUs larger than 4K in their high-capacity SSDs.
A recorded benchmark session on the company's PM9D3a 8-channel Gen 5 SSD was also on display.
The SSD family is being promoted as a mainstream option for datacenters, and boasts of sequential reads up to 12 GBps and writes up to 6.8 GBps. Random reads clock in at 2 M IOPS, and random writes at 400 K IOPS.
Available in multiple form-factors up to 32 TB (M.2 tops out at 2 TB), the drive's firmware includes optional support for flexible data placement (FDP) to help address the write amplification aspect.
The PM1753 is the current enterprise SSD flagship in Samsung's lineup. With support for 16 NAND channels and capacities up to 32 TB, this U.2 / E3.S SSD has advertised sequential read and write speeds of 14.8 GBps and 11 GBps respectively. Random reads and writes for 4 KB accesses are listed at 3.4 M and 600 K IOPS.
Samsung claims a 1.7x performance improvement and a 1.7x power efficiency improvement over the previous generation (PM1743), making this TLC SSD suitable for AI servers.
The 9th Gen. V-NAND wafer was also available for viewing, though photography was prohibited. Mass production of this flash memory began in April 2024.
StorageOne of the core challenges that Rapidus will face when it kicks off volume production of chips on its 2nm-class process technology in 2027 is lining up customers. With Intel, Samsung, and TSMC all slated to offer their own 2nm-class nodes by that time, Rapidus will need some kind of advantage to attract customers away from its more established rivals. To that end, the company thinks they've found their edge: fully automated packaging that will allow for shorter chip lead times than manned packaging operations.
In an interview with Nikkei, Rapidus' president, Atsuyoshi Koike, outlined the company's vision to use advanced packaging as a competitive edge for the new fab. The Hokkaido facility, which is currently under construction and is expecting to begin equipment installation this December, is already slated to both produce chips and offer advanced packaging services within the same facility, an industry first. But ultimately, Rapidus biggest plan to differentiate itself is by automating the back-end fab processes (chip packaging) to provide significantly faster turnaround times.
Rapidus is targetting back-end production in particular as, compared to front-end (lithography) production, back-end production still heavily relies on human labor. No other advanced packaging fab has fully automated the process thus far, which provides for a degree of flexibility, but slows throughput. But with automation in place to handle this aspect of chip production, Rapidus would be able to increase chip packaging efficiency and speed, which is crucial as chip assembly tasks become more complex. Rapidus is also collaborating with multiple Japanese suppliers to source materials for back-end production.
"In the past, Japanese chipmakers tried to keep their technology development exclusively in-house, which pushed up development costs and made them less competitive," Koike told Nikkei. "[Rapidus plans to] open up technology that should be standardized, bringing down costs, while handling important technology in-house."
Financially, Rapidus faces a significant challenge, needing a total of ¥5 trillion ($35 billion) by the time mass production starts in 2027. The company estimates that ¥2 trillion will be required by 2025 for prototype production. While the Japanese government has provided ¥920 billion in aid, Rapidus still needs to secure substantial funding from private investors.
Due to its lack of track record and experience of chip production as. well as limited visibility for success, Rapidus is finding it difficult to attract private financing. The company is in discussions with the government to make it easier to raise capital, including potential loan guarantees, and is hopeful that new legislation will assist in this effort.
SemiconductorsWhen Western Digital introduced its Ultrastar DC SN861 SSDs earlier this year, the company did not disclose which controller it used for these drives, which made many observers presume that WD was using an in-house controller. But a recent teardown of the drive shows that is not the case; instead, the company is using a controller from Fadu, a South Korean company founded in 2015 that specializes on enterprise-grade turnkey SSD solutions.
The Western Digital Ultrastar DC SN861 SSD is aimed at performance-hungry hyperscale datacenters and enterprise customers which are adopting PCIe Gen5 storage devices these days. And, as uncovered in photos from a recent Storage Review article, the drive is based on Fadu's FC5161 NVMe 2.0-compliant controller. The FC5161 utilizes 16 NAND channels supporting an ONFi 5.0 2400 MT/s interface, and features a combination of enterprise-grade capabilities (OCP Cloud Spec 2.0, SR-IOV, up to 512 name spaces for ZNS support, flexible data placement, NVMe-MI 1.2, advanced security, telemetry, power loss protection) not available on other off-the-shelf controllers – or on any previous Western Digital controllers.
The Ultrastar DC SN861 SSD offers sequential read speeds up to 13.7 GB/s as well as sequential write speeds up to 7.5 GB/s. As for random performance, it boasts with an up to 3.3 million random 4K read IOPS and up to 0.8 million random 4K write IOPS. The drives are available in capacities between 1.6 TB and 7.68 TB with one or three drive writes per day (DWPD) over five years rating as well as in U.2 and E1.S form-factors.
While the two form factors of the SN861 share a similar technical design, Western Digital has tailored each version for distinct workloads: the E1.S supports FDP and performance enhancements specifically for cloud environments. By contrast, the U.2 model is geared towards high-performance enterprise tasks and emerging applications like AI.
Without any doubts, Western Digital's Ultrastar DC SN861 is a feature-rich high-performance enterprise-grade SSD. It has another distinctive feature: a 5W idle power consumption, which is rather low by the standards of enterprise-grade drives (e.g., it is 1W lower compared to the SN840). While the difference with predecessors may be just 1W, hyperscalers deploy thousands of drives and for their TCO every watt counts.
Western Digital's Ultrastar DC SN861 SSDs are now available for purchase to select customers (such as Meta) and to interested parties. Prices are unknown, but they will depend on such factors as volumes.
Sources: Fadu, Storage Review
StorageWestern Digital's BiCS8 218-layer 3D NAND is being put to good use in a wide range of client and enterprise platforms, including WD's upcoming Gen 5 client SSDs and 128 TB-class datacenter SSD. On the external storage front, the company demonstrated four different products: for card-based media, 4 TB microSDUC and 8 TB SDUC cards with UHS-I speeds, and on the portable SSD front we had two 16 TB drives. One will be a SanDisk Desk Drive with external power, and the other in the SanDisk Extreme Pro housing with a lanyard opening in the case.
All of these are using BiCS8 QLC NAND, though I did hear booth talk (as I was taking leave) that they were not supposed to divulge the use of QLC in these products. The 4 TB microSDUC and 8 TB SDUC cards are rated for UHS-I speeds. They are being marketed under the SanDisk Ultra branding.
The SanDisk Desk Drive is an external SSD with a 18W power adapter, and it has been in the market for a few months now. Initially launched in capacities up to 8 TB, Western Digital had promised a 16 TB version before the end of the year. It appears that the product is coming to retail quite soon. One aspect to note is that this drive has been using TLC for the SKUs that are currently in the market, so it appears unlikely that the 16 TB version would be QLC. The units (at least up to the 8 TB capacity point) come with two SN850XE drives. Given the recent introduction of the 8 TB SN850X, an 'E' version with tweaked firmware is likely to be present in the 16 TB Desk Drive.
The 16 TB portable SSD in the SanDisk Extreme housing was a technology demonstration. It is definitely the highest capacity bus-powered portable SSD demonstrated by any vendor at any trade show thus far. Given the 16 TB Desk Drive's imminent market introduction, it is just a matter of time before the technology demonstration of the bus-powered version becomes a retail reality.
StorageIt is with great sadness that I find myself penning the hardest news post I’ve ever needed to write here at AnandTech. After over 27 years of covering the wide – and wild – world of computing hardware, today is AnandTech’s final day of publication.
For better or worse, we’ve reached the end of a long journey – one that started with a review of an AMD processor, and has ended with the review of an AMD processor. It’s fittingly poetic, but it is also a testament to the fact that we’ve spent the last 27 years doing what we love, covering the chips that are the lifeblood of the computing industry.
A lot of things have changed in the last quarter-century – in 1997 NVIDIA had yet to even coin the term “GPU” – and we’ve been fortunate to watch the world of hardware continue to evolve over the time period. We’ve gone from boxy desktop computers and laptops that today we’d charitably classify as portable desktops, to pocket computers where even the cheapest budget device puts the fastest PC of 1997 to shame.
The years have also brought some monumental changes to the world of publishing. AnandTech was hardly the first hardware enthusiast website, nor will we be the last. But we were fortunate to thrive in the past couple of decades, when so many of our peers did not, thanks to a combination of hard work, strategic investments in people and products, even more hard work, and the support of our many friends, colleagues, and readers.
Still, few things last forever, and the market for written tech journalism is not what it once was – nor will it ever be again. So, the time has come for AnandTech to wrap up its work, and let the next generation of tech journalists take their place within the zeitgeist.
It has been my immense privilege to write for AnandTech for the past 19 years – and to manage it as its editor-in-chief for the past decade. And while I carry more than a bit of remorse in being AnandTech’s final boss, I can at least take pride in everything we’ve accomplished over the years, whether it’s lauding some legendary products, writing technology primers that still remain relevant today, or watching new stars rise in expected places. There is still more that I had wanted AnandTech to do, but after 21,500 articles, this was a good start.
And while the AnandTech staff is riding off into the sunset, I am happy to report that the site itself won’t be going anywhere for a while. Our publisher, Future PLC, will be keeping the AnandTech website and its many articles live indefinitely. So that all of the content we’ve created over the years remains accessible and citable. Even without new articles to add to the collection, I expect that many of the things we’ve written over the past couple of decades will remain relevant for years to come – and remain accessible just as long.
The AnandTech Forums will also continue to be operated by Future’s community team and our dedicated troop of moderators. With forum threads going back to 1999 (and some active members just as long), the forums have a history almost as long and as storied as AnandTech itself (wounded monitor children, anyone?). So even when AnandTech is no longer publishing articles, we’ll still have a place for everyone to talk about the latest in technology – and have those discussions last longer than 48 hours.
Finally, for everyone who still needs their technical writing fix, our formidable opposition of the last 27 years and fellow Future brand, Tom’s Hardware, is continuing to cover the world of technology. There are a couple of familiar AnandTech faces already over there providing their accumulated expertise, and the site will continue doing its best to provide a written take on technology news.
As I look back on everything AnandTech has accomplished over the past 27 years, there are more than a few people, groups, and companies that I would like to thank on behalf of both myself and AnandTech as a whole.
First and foremost, I cannot thank enough all the editors who have worked for AnandTech over the years. T... Site Updates
Western Digital's BiCS8 218-layer 3D NAND is being put to good use in a wide range of client and enterprise platforms, including WD's upcoming Gen 5 client SSDs and 128 TB-class datacenter SSD. On the external storage front, the company demonstrated four different products: for card-based media, 4 TB microSDUC and 8 TB SDUC cards with UHS-I speeds, and on the portable SSD front we had two 16 TB drives. One will be a SanDisk Desk Drive with external power, and the other in the SanDisk Extreme Pro housing with a lanyard opening in the case.
All of these are using BiCS8 QLC NAND, though I did hear booth talk (as I was taking leave) that they were not supposed to divulge the use of QLC in these products. The 4 TB microSDUC and 8 TB SDUC cards are rated for UHS-I speeds. They are being marketed under the SanDisk Ultra branding.
The SanDisk Desk Drive is an external SSD with a 18W power adapter, and it has been in the market for a few months now. Initially launched in capacities up to 8 TB, Western Digital had promised a 16 TB version before the end of the year. It appears that the product is coming to retail quite soon. One aspect to note is that this drive has been using TLC for the SKUs that are currently in the market, so it appears unlikely that the 16 TB version would be QLC. The units (at least up to the 8 TB capacity point) come with two SN850XE drives. Given the recent introduction of the 8 TB SN850X, an 'E' version with tweaked firmware is likely to be present in the 16 TB Desk Drive.
The 16 TB portable SSD in the SanDisk Extreme housing was a technology demonstration. It is definitely the highest capacity bus-powered portable SSD demonstrated by any vendor at any trade show thus far. Given the 16 TB Desk Drive's imminent market introduction, it is just a matter of time before the technology demonstration of the bus-powered version becomes a retail reality.
StorageKioxia's booth at FMS 2024 was a busy one with multiple technology demonstrations keeping visitors occupied. A walk-through of the BiCS 8 manufacturing process was the first to grab my attention. Kioxia and Western Digital announced the sampling of BiCS 8 in March 2023. We had touched briefly upon its CMOS Bonded Array (CBA) scheme in our coverage of Kioxial's 2Tb QLC NAND device and coverage of Western Digital's 128 TB QLC enterprise SSD proof-of-concept demonstration. At Kioxia's booth, we got more insights.
Traditionally, fabrication of flash chips involved placement of the associate logic circuitry (CMOS process) around the periphery of the flash array. The process then moved on to putting the CMOS under the cell array, but the wafer development process was serialized with the CMOS logic getting fabricated first followed by the cell array on top. However, this has some challenges because the cell array requires a high-temperature processing step to ensure higher reliability that can be detrimental to the health of the CMOS logic. Thanks to recent advancements in wafer bonding techniques, the new CBA process allows the CMOS wafer and cell array wafer to be processed independently in parallel and then pieced together, as shown in the models above.
The BiCS 8 3D NAND incorporates 218 layers, compared to 112 layers in BiCS 5 and 162 layers in BiCS 6. The company decided to skip over BiCS 7 (or, rather, it was probably a short-lived generation meant as an internal test vehicle). The generation retains the four-plane charge trap structure of BiCS 6. In its TLC avatar, it is available as a 1 Tbit device. The QLC version is available in two capacities - 1 Tbit and 2 Tbit.
Kioxia also noted that while the number of layers (218) doesn't compare favorably with the latest layer counts from the competition, its lateral scaling / cell shrinkage has enabled it to be competitive in terms of bit density as well as operating speeds (3200 MT/s). For reference, the latest shipping NAND from Micron - the G9 - has 276 layers with a bit density in TLC mode of 21 Gbit/mm2, and operates at up to 3600 MT/s. However, its 232L NAND operates only up to 2400 MT/s and has a bit density of 14.6 Gbit/mm2.
It must be noted that the CBA hybrid bonding process has advantages over the current processes used by other vendors - including Micron's CMOS under array (CuA) and SK hynix's 4D PUC (periphery-under-chip) developed in the late 2010s. It is expected that other NAND vendors will also move eventually to some variant of the hybrid bonding scheme used by Kioxia.
StorageG.Skill on Tuesday introduced its ultra-low-latency DDR5-6400 memory modules that feature a CAS latency of 30 clocks, which appears to be the industry's most aggressive timings yet for DDR5-6400 sticks. The modules will be available for both AMD and Intel CPU-based systems.
With every new generation of DDR memory comes an increase in data transfer rates and an extension of relative latencies. While for the vast majority of applications, the increased bandwidth offsets the performance impact of higher timings, there are applications that favor low latencies. However, shrinking latencies is sometimes harder than increasing data transfer rates, which is why low-latency modules are rare.
Nonetheless, G.Skill has apparently managed to cherry-pick enough DDR5 memory chips and build appropriate printed circuit boards to produce DDR5-6400 modules with CL30 timings, which are substantially lower than the CL46 timings recommended by JEDEC for this speed bin. This means that while JEDEC-standard modules have an absolute latency of 14.375 ns, G.Skill's modules can boast a latency of just 9.375 ns – an approximately 35% decrease.
G.Skill's DDR5-6400 CL30 39-39-102 modules have a capacity of 16 GB and will be available in 32 GB dual-channel kits, though the company does not disclose voltages, which are likely considerably higher than those standardized by JEDEC.
The company plans to make its DDR5-6400 modules available both for AMD systems with EXPO profiles (Trident Z5 Neo RGB and Trident Z5 Royal Neo) and for Intel-powered PCs with XMP 3.0 profiles (Trident Z5 RGB and Trident Z5 Royal). For AMD AM5 systems that have a practical limitation of 6000 MT/s – 6400 MT/s for DDR5 memory (as this is roughly as fast as AMD's Infinity Fabric can operate at with a 1:1 ratio), the new modules will be particularly beneficial for AMD's Ryzen 7000 and Ryzen 9000-series processors.
G.Skill notes that since its modules are non-standard, they will not work with all systems but will operate on high-end motherboards with properly cooled CPUs.
The new ultra-low-latency memory kits will be available worldwide from G.Skill's partners starting in late August 2024. The company did not disclose the pricing of these modules, but since we are talking about premium products that boast unique specifications, they are likely to be priced accordingly.
MemoryAt FMS 2024, the technological requirements from the storage and memory subsystem took center stage. Both SSD and controller vendors had various demonstrations touting their suitability for different stages of the AI data pipeline - ingestion, preparation, training, checkpointing, and inference. Vendors like Solidigm have different types of SSDs optimized for different stages of the pipeline. At the same time, controller vendors have taken advantage of one of the features introduced recently in the NVM Express standard - Flexible Data Placement (FDP).
FDP involves the host providing information / hints about the areas where the controller could place the incoming write data in order to reduce the write amplification. These hints are generated based on specific block sizes advertised by the device. The feature is completely backwards-compatible, with non-FDP hosts working just as before with FDP-enabled SSDs, and vice-versa.
Silicon Motion's MonTitan Gen 5 Enterprise SSD Platform was announced back in 2022. Since then, Silicon Motion has been touting the flexibility of the platform, allowing its customers to incorporate their own features as part of the customization process. This approach is common in the enterprise space, as we have seen with Marvell's Bravera SC5 SSD controller in the DapuStor SSDs and Microchip's Flashtec controllers in the Longsys FORESEE enterprise SSDs.
At FMS 2024, the company was demonstrating the advantages of flexible data placement by allowing a single QLC SSD based on their MonTitan platform to take part in different stages of the AI data pipeline while maintaining the required quality of service (minimum bandwidth) for each process. The company even has a trademarked name (PerformaShape) for the firmware feature in the controller that allows the isolation of different concurrent SSD accesses (from different stages in the AI data pipeline) to guarantee this QoS. Silicon Motion claims that this scheme will enable its customers to get the maximum write performance possible from QLC SSDs without negatively impacting the performance of other types of accesses.
Silicon Motion and Phison have market leadership in the client SSD controller market with similar approaches. However, their enterprise SSD controller marketing couldn't be more different. While Phison has gone in for a turnkey solution with their Gen 5 SSD platform (to the extent of not adopting the white label route for this generation, and instead opting to get the SSDs qualified with different cloud service providers themselves), Silicon Motion is opting for a different approach. The flexibility and customization possibilities can make platforms like the MonTitan appeal to flash array vendors.
StorageThe CXL consortium has had a regular presence at FMS (which rechristened itself from 'Flash Memory Summit' to the 'Future of Memory and Storage' this year). Back at FMS 2022, the company had announced v3.0 of the CXL specifications. This was followed by CXL 3.1's introduction at Supercomputing 2023. Having started off as a host to device interconnect standard, it had slowly subsumed other competing standards such as OpenCAPI and Gen-Z. As a result, the specifications started to encompass a wide variety of use-cases by building a protocol on top of the the ubiquitous PCIe expansion bus. The CXL consortium comprises of heavyweights such as AMD and Intel, as well as a large number of startup companies attempting to play in different segments on the device side. At FMS 2024, CXL had a prime position in the booth demos of many vendors.
The migration of server platforms from DDR4 to DDR5, along with the rise of workloads demanding large RAM capacity (but not particularly sensitive to either memory bandwidth or latency), has opened up memory expansion modules as one of the first set of widely available CXL devices. Over the last couple of years, we have had product announcements from Samsung and Micron in this area.
At FMS 2024, SK hynix was showing off their DDR5-based CMM-DDR5 CXL memory module with a 128 GB capacity. The company was also detailing their associated Heterogeneous Memory Software Development Kit (HMSDK) - a set of libraries and tools at both the kernel and user levels aimed at increasing the ease of use of CXL memory. This is achieved in part by considering the memory pyramid / hierarchy and relocating the data between the server's main memory (DRAM) and the CXL device based on usage frequency.
The CMM-DDR5 CXL memory module comes in the SDFF form-factor (E3.S 2T) with a PCIe 3.0 x8 host interface. The internal memory is based on 1α technology DRAM, and the device promises DDR5-class bandwidth and latency within a single NUMA hop. As these memory modules are meant to be used in datacenters and enterprises, the firmware includes features for RAS (reliability, availability, and serviceability) along with secure boot and other management features.
SK hynix was also demonstrating Niagara 2.0 - a hardware solution (currently based on FPGAs) to enable memory pooling and sharing - i.e, connecting multiple CXL memories to allow different hosts (CPUs and GPUs) to optimally share their capacity. The previous version only allowed capacity sharing, but the latest version enables sharing of data also. SK hynix had presented these solutions at the CXL DevCon 2024 earlier this year, but some progress seems to have been made in finalizing the specifications of the CMM-DDR5 at FMS 2024.
Micron had unveiled the CZ120 CXL Memory Expansion Module last year based on the Microchip SMC 2000 series CXL memory controller. At FMS 2024, Micron and Microchip had a demonstration of the module on a Granite Rapids server.
Additional insights into the SMC 2000 controller were also provided.
The CXL memory controller also incorporates DRAM die failure handling, and Microchip also provides diagnostics and debug tools to analyze failed modules. The memory controller also supports ECC, which forms part of the enterprise... Storage
The CXL consortium has had a regular presence at FMS (which rechristened itself from 'Flash Memory Summit' to the 'Future of Memory and Storage' this year). Back at FMS 2022, the company had announced v3.0 of the CXL specifications. This was followed by CXL 3.1's introduction at Supercomputing 2023. Having started off as a host to device interconnect standard, it had slowly subsumed other competing standards such as OpenCAPI and Gen-Z. As a result, the specifications started to encompass a wide variety of use-cases by building a protocol on top of the the ubiquitous PCIe expansion bus. The CXL consortium comprises of heavyweights such as AMD and Intel, as well as a large number of startup companies attempting to play in different segments on the device side. At FMS 2024, CXL had a prime position in the booth demos of many vendors.
The migration of server platforms from DDR4 to DDR5, along with the rise of workloads demanding large RAM capacity (but not particularly sensitive to either memory bandwidth or latency), has opened up memory expansion modules as one of the first set of widely available CXL devices. Over the last couple of years, we have had product announcements from Samsung and Micron in this area.
At FMS 2024, SK hynix was showing off their DDR5-based CMM-DDR5 CXL memory module with a 128 GB capacity. The company was also detailing their associated Heterogeneous Memory Software Development Kit (HMSDK) - a set of libraries and tools at both the kernel and user levels aimed at increasing the ease of use of CXL memory. This is achieved in part by considering the memory pyramid / hierarchy and relocating the data between the server's main memory (DRAM) and the CXL device based on usage frequency.
The CMM-DDR5 CXL memory module comes in the SDFF form-factor (E3.S 2T) with a PCIe 3.0 x8 host interface. The internal memory is based on 1α technology DRAM, and the device promises DDR5-class bandwidth and latency within a single NUMA hop. As these memory modules are meant to be used in datacenters and enterprises, the firmware includes features for RAS (reliability, availability, and serviceability) along with secure boot and other management features.
SK hynix was also demonstrating Niagara 2.0 - a hardware solution (currently based on FPGAs) to enable memory pooling and sharing - i.e, connecting multiple CXL memories to allow different hosts (CPUs and GPUs) to optimally share their capacity. The previous version only allowed capacity sharing, but the latest version enables sharing of data also. SK hynix had presented these solutions at the CXL DevCon 2024 earlier this year, but some progress seems to have been made in finalizing the specifications of the CMM-DDR5 at FMS 2024.
Micron had unveiled the CZ120 CXL Memory Expansion Module last year based on the Microchip SMC 2000 series CXL memory controller. At FMS 2024, Micron and Microchip had a demonstration of the module on a Granite Rapids server.
Additional insights into the SMC 2000 controller were also provided.
The CXL memory controller also incorporates DRAM die failure handling, and Microchip also provides diagnostics and debug tools to analyze failed modules. The memory controller also supports ECC, which forms part of the enterprise... Storage
Under the CHIPS & Science Act, the U.S. government provided tens of billions of dollars in grants and loans to the world's leading maker of chips, such as Intel, Samsung, and TSMC, which will significantly expand the country's semiconductor production industry in the coming years. However, most chips are typically tested, assembled, and packaged in Asia, which has left the American supply chain incomplete. Addressing this last gap in the government's domestic chip production plans, these past couple of weeks the U.S. government signed memorandums of understanding worth about $1.5 billion with Amkor and SK hynix to support their efforts to build chip packaging facilities in the U.S.
Amkor plans to build a $2 billion advanced packaging facility near Peoria, Arizona, to test and assemble chips produced by TSMC at its Fab 21 near Phoenix, Arizona. The company signed a MOU that offers $400 million in direct funding and access to $200 million in loans under the CHIPS & Science Act. In addition, the company plans to take advantage of a 25% investment tax credit on eligible capital expenditures.
Set to be strategically positioned near TSMC's upcoming Fab 21 complex in Arizona, Amkor's Peoria facility will occupy 55 acres and, when fully completed, will feature over 500,000 square feet (46,451 square meters) of cleanroom space, more than twice the size of Amkor's advanced packaging site in Vietnam. Although the company has not disclosed the exact capacity or the specific technologies the facility will support, it is expected to cater to a wide range of industries, including automotive, high-performance computing, and mobile technologies. This suggests the new plant will offer diverse packaging solutions, including traditional, 2.5D, and 3D technologies.
Amkor has collaborated extensively with Apple on the vision and initial setup of the Peoria facility, as Apple is slated to be the facility's first and largest customer, marking a significant commitment from the tech giant. This partnership highlights the importance of the new facility in reinforcing the U.S. semiconductor supply chain and positioning Amkor as a key partner for companies relying on TSMC's manufacturing capabilities. The project is expected to generate around 2,000 jobs and is scheduled to begin operations in 2027.
This week SK hynix also signed a preliminary agreement with the U.S. government to receive up to $450 million in direct funding and $500 million in loans to build an advanced memory packaging facility in West Lafayette, Indiana.
The proposed facility is scheduled to begin operations in 2028, which means that it will assemble HBM4 or HBM4E memory. Meanwhile, DRAM devices for high bandwidth memory (HBM) stacks will still be produced in South Korea. Nonetheless, packing finished HBM4/HBM4E in the U.S. and possibly integrating these memory modules with high-end processors is a big deal.
In addition to building its packaging plant, SK hynix plans to collaborate with Purdue University and other local research institutions to advance semiconductor technology and packaging innovations. This partnership is intended to bolster research and development in the region, positioning the facility as a hub for AI technology and skilled employment.
SemiconductorsIntel has divested its entire stake in Arm Holdings during the second quarter, raising approximately $147 million. Alongside this, Intel sold its stake in cybersecurity firm ZeroFox and reduced its holdings in Astera Labs, all as part of a broader effort to manage costs and recover cash amid significant financial challenges.
The sale of Intel's 1.18 million shares in Arm Holdings, as reported in a recent SEC filing, comes at a time when the company is struggling with substantial financial losses. Despite the $147 million generated from the sale, Intel reported a $120 million net loss on its equity investments for the quarter, which is a part of a larger $1.6 billion loss that Intel faced during this period.
In addition to selling its stake in Arm, Intel also exited its investment in ZeroFox and reduced its involvement with Astera Labs, a company known for developing connectivity platforms for enterprise hardware. These moves are in line with Intel's strategy to reduce costs and stabilize its financial position as it faces ongoing market challenges.
Despite the divestment, Intel's past investment in Arm was likely driven by strategic considerations. Arm Holdings is a significant force in the semiconductor industry, with its designs powering most mobile devices, and, for obvious reasons, Intel would like to address these. Intel and Arm are also collaborating on datacenter platforms tailored for Intel's 18A process technology. Additionally, Arm might view Intel as a potential licensee for its technologies and a valuable partner for other companies that license Arm's designs.
Intel's investment in Astera Labs was also a strategic one as the company probably wanted to secure steady supply of smart retimers, smart cable modems, and CXL memory controller, which are used in volumes in datacenters and Intel is certainly interested in selling as many datacenter CPUs as possible.
Intel's financial struggles were highlighted earlier this month when the company released a disappointing earnings report, which led to a 33% drop in its stock value, erasing billions of dollars of capitalization. To counter these difficulties, Intel announced plans to cut 15,000 jobs and implement other expense reductions. The company has also suspended its dividend, signaling the depth of its efforts to conserve cash and focus on recovery. When it comes to divestment of Arm stock, the need for immediate financial stabilization has presumably taken precedence, leading to the decision.
CPUsThe USB Implementers Forum (USB-IF) introduced USB4 version 2.0 in fall 2022, and it expects systems and devices with the tech to emerge later this year and into next year. These upcoming products will largely rely on Intel's Barlow Ridge controller, a full-featured Thunderbolt 5 controller that goes above and beond the baseline USB4 v2 spec. And though extremely capable, Intel's Thunderbolt controllers are also quite expensive, and Barlow Ridge isn't expected to be any different. Fortunately, for system and device vendors that just need a basic USB4 v2 solution, ASMedia is also working on its own USB4 v2 controller.
At Computex 2024, ASMedia demonstrated a prototype of its upcoming USB4 v2 physical interface (PHY), which will support USB4 v2's new Gen 4 (160Gbps) data rates and the associated PAM-3 signal encoding. The prototype was implemented using an FPGA, as the company yet has to tape out the completed controller.
Ultimately, the purpose of showing off a FPGA-based PHY at Computex was to allow ASMedia to demonstrate their current PHY design. With the shift to PAM-3 encoding for USB4 v2, ASMedia (and the rest of the USB ecosystem) must develop significantly more complex controllers – and there's no part of that more critical than a solid and reliable PHY design.
As part of their demonstration, ASMedia had a classic eye diagram display. The eye diagram demoed has a clear opening in the center, which is indicative of good signal integrity, as the larger the eye opening, the less distortion and noise in the signal. The horizontal width of the eye opening represents the time window in which the signal can be sampled correctly, so the relatively narrow horizontal spread of the eye opening suggests that there is minimal jitter, meaning the signal transitions are consistent and predictable. Finally, the vertical height of the eye opening indicates the signal amplitude and the rather tall eye opening suggests a higher signal-to-noise ratio (SNR), meaning that the signal is strong compared to any noise present.
ASMedia itself is one of the major suppliers for discrete USB controllers, so the availability of ASMedia's USB4 v2 chip is crucial for adoption of the standard in general. While Intel will spearhead the industry with their Barlow Ridge Thunderbolt 5/USB4 v2 controller, ASMedia's controller is poised to end up in a far larger range of devices. So the importance of the company's USB4 v2 PHY demo is hard to overstate.
Demos aside, ASMedia is hoping to tape the chip out soon. If all goes well, the company expects their first USB4 v2 controllers to hit the market some time in the second half of 2025.
PeripheralsWhile Realtek is best known in the enthusiast space for for its peripheral controllers such as audio codecs and network controllers, the company also has a small-but-respectable SSD controller business that tends to fly under the radar due to its focus on entry-level and mainstream drives. But Realtek's stature in the SSD space is on the rise, as the company is not only planning new PCIe Gen5 SSD controllers, but also their first high-end, DRAM-equipped SSD controller.
For this year's Computex trade show, Realtek laid out a new SSD controller roadmap that calls for the company to release a trio of new SSD controllers over the next couple of years. First up is a new four-channel entry-level PCIe 4.0 controller, the RTS5776DL, which will be joined a bit later by a PCIe 5.0 variant, the RTS5781DL. But most interesting on Realtek's new roadmap is the final chip being planned: the eight-channel, DRAM-equipped RTS5782, which would be the company's first high-end SSD controller, capable of hitting sequential read rates as high as 14GB/second.
| Realtek NVMe SSD Controller Comparison | |||||||||
| RTS5782 | RTS5781DL | RTS5776DL | RTS5772DL | RTS5766DL | |||||
| Market Segment | High-End | Mainstream | Entry-Level | ||||||
| Error Correction | 4K LDPC | 2K LDPC | |||||||
| DRAM | DDR4, LPDDR4(X) | No | No | No | No | ||||
| Host Interface | PCIe 5.0 x4 | PCIe 5.0 x4 | PCIe 4.0 x4 | PCIe 4.0 x4 | PCIe 3.0 x4 | ||||
| NVMe Version | NVMe 2.0 | NVMe 2.0 | NVMe 2.0 | NVMe 1.4 | NVMe 1.4 | ||||
| NAND Channels, Interface Speed | 8 ch, 3600 MT/s |
4 ch, 3600 MT/s |
4 ch, 3600 MT/s |
8 ch, 1600 MT/s |
4 ch, 1200 MT/s |
||||
| Sequential Read | 14 GB/s | 10 GB/s | 7.4 GB/s | 6 GB/s | 3.2 GB/s | ||||
| Sequential Write | 12 GB/s | 10 GB/s | 7.4 GB/s | 6 GB/s | 2.2 GB/s | ||||
| 4KB Random Read IOPS | 2500k | 1400k | 1200k | - | - | ||||
| 4KB Random Write IOPS | 2500k | 1400k | 1200k | - | - | ||||
Diving a bit deeper into Realtek's roadmap, the RTS5776DL is traditional DRAM-less PCIe Gen4 x4 controller with four NAND chann... SSDs
Following a relative lull in the desktop memory industry in the previous decade, the past few years have seen a flurry of new memory standards and form factors enter development. Joining the traditional DIMM/SO-DIMM form factors, we've seen the introduction of space-efficient DDR5 CAMM2s, their LPDDR5-based counterpart the LPCAMM2, and the high-clockspeed optimized CUDIMM. But JEDEC, the industry organization behind these efforts, is not done there. In a press release sent out at the start of the week, the group announced that it is working on standards for DDR5 Multiplexed Rank DIMMs (MRDIMM) for servers, as well as an updated LPCAMM standard to go with next-generation LPDDR6 memory.
Just last week Micron introduced the industry's first DDR5 MRDIMMs, which are timed to launch alongside Intel's Xeon 6 server platforms. But while Intel and its partners are moving full steam ahead on MRDIMMs, the MRDIMM specification has not been fully ratified by JEDEC itself. All told, it's not unusual to see Intel pushing the envelope here on new memory technologies (the company is big enough to bootstrap its own ecosystem). But as MRDIMMs are ultimately meant to be more than just a tool for Intel, a proper industry standard is still needed – even if that takes a bit longer.
Under the hood, MRDIMMs continue to use DDR5 components, form-factor, pinout, SPD, power management ICs (PMICs), and thermal sensors. The major change with the technology is the introduction of multiplexing, which combines multiple data signals over a single channel. The MRDIMM standard also adds RCD/DB logic in a bid to boost performance, increase capacity of memory modules up to 256 GB (for now), shrink latencies, and reduce power consumption of high-end memory subsystems. And, perhaps key to MRDIMM adoption, the standard is being implemented as a backwards-compatible extension to traditional DDR5 RDIMMs, meaning that MRDIMM-capable servers can use either RDIMMs or MRDIMMs, depending on how the operator opts to configure the system.
The MRDIMM standard aims to double the peak bandwidth to 12.8 Gbps, increasing pin speed and supporting more than two ranks. Additionally, a "Tall MRDIMM" form factor is in the works (and pictured above), which is designed to allow for higher capacity DIMMs by providing more area for laying down memory chips. Currently, ultra high capacity DIMMs require using expensive, multi-layer DRAM packages that use through-silicon vias (3DS packaging) to attach the individual DRAM dies; a Tall MRDIMM, on the other hand, can just use a larger number of commodity DRAM chips. Overall, the Tall MRDIMM form factor enables twice the number of DRAM single-die packages on the DIMM.
Meanwhile, this week's announcement from JEDEC offers the first significant insight into what to expect from LPDDR6 CAMMs. And despite LPDDR5 CAMMs having barely made it out the door, some significant shifts with LPDDR6 itself means that JEDEC will need to make some major changes to the CAMM standard to accommodate the newer memory type.

JEDEC Presentation: The CAMM2 Journey and Future Potential
Besides the higher memory clockspeeds allowed by LPDDR6 – JEDEC is targeting data transfer rates of 14.4 GT/s and higher – the new memory form-factor will also incorporate an altogether new connector array. This is to accommodate LPDDR6's wider memory bus, which sees the channel width of an individual memory chip grow from 16-bits wide to 24-bits wide. As a result, the current LPCAMM design, which is intended to match the PC standard of a cumulative 128-bit (16x8) design needs to be reconfigured to match LPDDR6's alterations.
Ultimately, JEDEC is targeting a 24-bit subhannel/48-bit channel design, which will result in a 192-bit wide LPCAMM. While the LPCAMM connector itself is set to grow from 14 rows of pins to possibly as high as 20. New memory technologies typically require new DIMMs to begin with, so it's important to clarify that this is not unexpected, but at th... Memory
Corsair, a prominent figure in PC components, has announced a strategic shift in its approach to power supply unit (PSU) certifications. The company is dropping the widely recognized 80 PLUS certification in favor of the newer but more comprehensive Cybenetics certification.
According to the press release, the primary reason for Corsair’s move to Cybenetics certifications lies in the program's dual focus on both energy efficiency and noise levels. While the 80 PLUS certification has been a standard in the industry for decades, it exclusively measures energy conversion efficiency at four load levels (10%, 20%, 50%, 100%). Despite its long-standing presence, the 80 PLUS program has not seen significant updates in over 15 years, which limits its ability to provide a holistic view of PSU performance.
On the other hand, Cybenetics offers a more nuanced approach. It evaluates PSUs across multiple load levels and includes noise level assessments. This dual certification system rates efficiency on a familiar scale (Bronze to Titanium, plus a higher certification called Diamond) and noise levels from Standard (noisy) to A++ (virtually silent). By incorporating noise measurements, Cybenetics provides a more comprehensive overview of PSU performance, addressing an important aspect often overlooked by other certification programs. Cybenetics also enforces Power Factor, 5VSB efficiency, and Vampire Power thresholds, all important to the overall efficiency of a PSU.
Even though they're dropping 80 PLUS in favor of Cybernetics, Corsair is being highly diplomatic with their press release. They even suggest that the reader should not disregard either in favor of the other.
Our opinion is a bit harsher: the simplicity of the 80 PLUS certification program has led to two major flaws. First, manufacturers have primarily focused on maximizing efficiency at three specific load points, neglecting overall performance. Second, the majority of PSUs have clustered around the 80 PLUS Gold and Platinum certifications, with very few achieving the stringent Titanium level. This results in hundreds of PSUs with significantly different technical capabilities sharing the same certification badge, creating a misleading uniformity that fails to reflect true performance disparities.
Furthermore, almost every PSU platform that has been released over the past 15 years would achieve 80Plus Gold status or greater, with very few products falling down to the 80Plus Bronze certification and almost zero meeting the 80Plus White and 80Plus Silver requirements, making the three lowermost certifications practically defunct. Cybenetics dual certification certainly does not solve every issue and cannot fully assess everything there is to assess about a PSU, but it certainly makes much more information available to the user and allows users to at least factor in acoustics performance when purchasing a product.
The issue that seems to remain is that, due to the slackest requirements, manufacturers were almost always certifying their units with an input voltage of 115 VAC, resulting in myriads of units carrying a certification badge that would fail the same 80Plus certification requirements with an input voltage of 230 VAC. Unfortunately, this is also true for the Cybenetics standard, as the badges do not inform the user about the input voltage that the certification was attained with. However, as the Cybenetics standard revolves around average efficiency and not efficiency at specific load points, the majority of the PSUs should meet both efficiency thresholds and not the other way around.
Certification processes can be costly for manufacturers. By opting for the Cybenetics program, Corsair possibly aims to get the most value from its certification investments. Cybenetics offers more detailed and up-to-date testing methodologies, ensuring that the data provided is more reflective of real-world usage scenarios. In any case, Corsair’s shift to Cybenetics certification marks a significant development in the evaluation of PSUs and has the potential to create waves in the market.
Ultimately, this move has the potential disrupt the status quo. With Corsair's sheer size and influence in the larger power supply market, this could very well prompt other... Power Supply
The USB Implementers Forum (USB-IF) introduced USB4 version 2.0 in fall 2022, and it expects systems and devices with the tech to emerge later this year and into next year. These upcoming products will largely rely on Intel's Barlow Ridge controller, a full-featured Thunderbolt 5 controller that goes above and beond the baseline USB4 v2 spec. And though extremely capable, Intel's Thunderbolt controllers are also quite expensive, and Barlow Ridge isn't expected to be any different. Fortunately, for system and device vendors that just need a basic USB4 v2 solution, ASMedia is also working on its own USB4 v2 controller.
At Computex 2024, ASMedia demonstrated a prototype of its upcoming USB4 v2 physical interface (PHY), which will support USB4 v2's new Gen 4 (160Gbps) data rates and the associated PAM-3 signal encoding. The prototype was implemented using an FPGA, as the company yet has to tape out the completed controller.
Ultimately, the purpose of showing off a FPGA-based PHY at Computex was to allow ASMedia to demonstrate their current PHY design. With the shift to PAM-3 encoding for USB4 v2, ASMedia (and the rest of the USB ecosystem) must develop significantly more complex controllers – and there's no part of that more critical than a solid and reliable PHY design.
As part of their demonstration, ASMedia had a classic eye diagram display. The eye diagram demoed has a clear opening in the center, which is indicative of good signal integrity, as the larger the eye opening, the less distortion and noise in the signal. The horizontal width of the eye opening represents the time window in which the signal can be sampled correctly, so the relatively narrow horizontal spread of the eye opening suggests that there is minimal jitter, meaning the signal transitions are consistent and predictable. Finally, the vertical height of the eye opening indicates the signal amplitude and the rather tall eye opening suggests a higher signal-to-noise ratio (SNR), meaning that the signal is strong compared to any noise present.
ASMedia itself is one of the major suppliers for discrete USB controllers, so the availability of ASMedia's USB4 v2 chip is crucial for adoption of the standard in general. While Intel will spearhead the industry with their Barlow Ridge Thunderbolt 5/USB4 v2 controller, ASMedia's controller is poised to end up in a far larger range of devices. So the importance of the company's USB4 v2 PHY demo is hard to overstate.
Demos aside, ASMedia is hoping to tape the chip out soon. If all goes well, the company expects their first USB4 v2 controllers to hit the market some time in the second half of 2025.
PeripheralsWhile Realtek is best known in the enthusiast space for for its peripheral controllers such as audio codecs and network controllers, the company also has a small-but-respectable SSD controller business that tends to fly under the radar due to its focus on entry-level and mainstream drives. But Realtek's stature in the SSD space is on the rise, as the company is not only planning new PCIe Gen5 SSD controllers, but also their first high-end, DRAM-equipped SSD controller.
For this year's Computex trade show, Realtek laid out a new SSD controller roadmap that calls for the company to release a trio of new SSD controllers over the next couple of years. First up is a new four-channel entry-level PCIe 4.0 controller, the RTS5776DL, which will be joined a bit later by a PCIe 5.0 variant, the RTS5781DL. But most interesting on Realtek's new roadmap is the final chip being planned: the eight-channel, DRAM-equipped RTS5782, which would be the company's first high-end SSD controller, capable of hitting sequential read rates as high as 14GB/second.
| Realtek NVMe SSD Controller Comparison | |||||||||
| RTS5782 | RTS5781DL | RTS5776DL | RTS5772DL | RTS5766DL | |||||
| Market Segment | High-End | Mainstream | Entry-Level | ||||||
| Error Correction | 4K LDPC | 2K LDPC | |||||||
| DRAM | DDR4, LPDDR4(X) | No | No | No | No | ||||
| Host Interface | PCIe 5.0 x4 | PCIe 5.0 x4 | PCIe 4.0 x4 | PCIe 4.0 x4 | PCIe 3.0 x4 | ||||
| NVMe Version | NVMe 2.0 | NVMe 2.0 | NVMe 2.0 | NVMe 1.4 | NVMe 1.4 | ||||
| NAND Channels, Interface Speed | 8 ch, 3600 MT/s |
4 ch, 3600 MT/s |
4 ch, 3600 MT/s |
8 ch, 1600 MT/s |
4 ch, 1200 MT/s |
||||
| Sequential Read | 14 GB/s | 10 GB/s | 7.4 GB/s | 6 GB/s | 3.2 GB/s | ||||
| Sequential Write | 12 GB/s | 10 GB/s | 7.4 GB/s | 6 GB/s | 2.2 GB/s | ||||
| 4KB Random Read IOPS | 2500k | 1400k | 1200k | - | - | ||||
| 4KB Random Write IOPS | 2500k | 1400k | 1200k | - | - | ||||
Diving a bit deeper into Realtek's roadmap, the RTS5776DL is traditional DRAM-less PCIe Gen4 x4 controller with four NAND chann... SSDs
Following a relative lull in the desktop memory industry in the previous decade, the past few years have seen a flurry of new memory standards and form factors enter development. Joining the traditional DIMM/SO-DIMM form factors, we've seen the introduction of space-efficient DDR5 CAMM2s, their LPDDR5-based counterpart the LPCAMM2, and the high-clockspeed optimized CUDIMM. But JEDEC, the industry organization behind these efforts, is not done there. In a press release sent out at the start of the week, the group announced that it is working on standards for DDR5 Multiplexed Rank DIMMs (MRDIMM) for servers, as well as an updated LPCAMM standard to go with next-generation LPDDR6 memory.
Just last week Micron introduced the industry's first DDR5 MRDIMMs, which are timed to launch alongside Intel's Xeon 6 server platforms. But while Intel and its partners are moving full steam ahead on MRDIMMs, the MRDIMM specification has not been fully ratified by JEDEC itself. All told, it's not unusual to see Intel pushing the envelope here on new memory technologies (the company is big enough to bootstrap its own ecosystem). But as MRDIMMs are ultimately meant to be more than just a tool for Intel, a proper industry standard is still needed – even if that takes a bit longer.
Under the hood, MRDIMMs continue to use DDR5 components, form-factor, pinout, SPD, power management ICs (PMICs), and thermal sensors. The major change with the technology is the introduction of multiplexing, which combines multiple data signals over a single channel. The MRDIMM standard also adds RCD/DB logic in a bid to boost performance, increase capacity of memory modules up to 256 GB (for now), shrink latencies, and reduce power consumption of high-end memory subsystems. And, perhaps key to MRDIMM adoption, the standard is being implemented as a backwards-compatible extension to traditional DDR5 RDIMMs, meaning that MRDIMM-capable servers can use either RDIMMs or MRDIMMs, depending on how the operator opts to configure the system.
The MRDIMM standard aims to double the peak bandwidth to 12.8 Gbps, increasing pin speed and supporting more than two ranks. Additionally, a "Tall MRDIMM" form factor is in the works (and pictured above), which is designed to allow for higher capacity DIMMs by providing more area for laying down memory chips. Currently, ultra high capacity DIMMs require using expensive, multi-layer DRAM packages that use through-silicon vias (3DS packaging) to attach the individual DRAM dies; a Tall MRDIMM, on the other hand, can just use a larger number of commodity DRAM chips. Overall, the Tall MRDIMM form factor enables twice the number of DRAM single-die packages on the DIMM.
Meanwhile, this week's announcement from JEDEC offers the first significant insight into what to expect from LPDDR6 CAMMs. And despite LPDDR5 CAMMs having barely made it out the door, some significant shifts with LPDDR6 itself means that JEDEC will need to make some major changes to the CAMM standard to accommodate the newer memory type.

JEDEC Presentation: The CAMM2 Journey and Future Potential
Besides the higher memory clockspeeds allowed by LPDDR6 – JEDEC is targeting data transfer rates of 14.4 GT/s and higher – the new memory form-factor will also incorporate an altogether new connector array. This is to accommodate LPDDR6's wider memory bus, which sees the channel width of an individual memory chip grow from 16-bits wide to 24-bits wide. As a result, the current LPCAMM design, which is intended to match the PC standard of a cumulative 128-bit (16x8) design needs to be reconfigured to match LPDDR6's alterations.
Ultimately, JEDEC is targeting a 24-bit subhannel/48-bit channel design, which will result in a 192-bit wide LPCAMM. While the LPCAMM connector itself is set to grow from 14 rows of pins to possibly as high as 20. New memory technologies typically require new DIMMs to begin with, so it's important to clarify that this is not unexpected, but at th... Memory
Corsair, a prominent figure in PC components, has announced a strategic shift in its approach to power supply unit (PSU) certifications. The company is dropping the widely recognized 80 PLUS certification in favor of the newer but more comprehensive Cybenetics certification.
According to the press release, the primary reason for Corsair’s move to Cybenetics certifications lies in the program's dual focus on both energy efficiency and noise levels. While the 80 PLUS certification has been a standard in the industry for decades, it exclusively measures energy conversion efficiency at four load levels (10%, 20%, 50%, 100%). Despite its long-standing presence, the 80 PLUS program has not seen significant updates in over 15 years, which limits its ability to provide a holistic view of PSU performance.
On the other hand, Cybenetics offers a more nuanced approach. It evaluates PSUs across multiple load levels and includes noise level assessments. This dual certification system rates efficiency on a familiar scale (Bronze to Titanium, plus a higher certification called Diamond) and noise levels from Standard (noisy) to A++ (virtually silent). By incorporating noise measurements, Cybenetics provides a more comprehensive overview of PSU performance, addressing an important aspect often overlooked by other certification programs. Cybenetics also enforces Power Factor, 5VSB efficiency, and Vampire Power thresholds, all important to the overall efficiency of a PSU.
Even though they're dropping 80 PLUS in favor of Cybernetics, Corsair is being highly diplomatic with their press release. They even suggest that the reader should not disregard either in favor of the other.
Our opinion is a bit harsher: the simplicity of the 80 PLUS certification program has led to two major flaws. First, manufacturers have primarily focused on maximizing efficiency at three specific load points, neglecting overall performance. Second, the majority of PSUs have clustered around the 80 PLUS Gold and Platinum certifications, with very few achieving the stringent Titanium level. This results in hundreds of PSUs with significantly different technical capabilities sharing the same certification badge, creating a misleading uniformity that fails to reflect true performance disparities.
Furthermore, almost every PSU platform that has been released over the past 15 years would achieve 80Plus Gold status or greater, with very few products falling down to the 80Plus Bronze certification and almost zero meeting the 80Plus White and 80Plus Silver requirements, making the three lowermost certifications practically defunct. Cybenetics dual certification certainly does not solve every issue and cannot fully assess everything there is to assess about a PSU, but it certainly makes much more information available to the user and allows users to at least factor in acoustics performance when purchasing a product.
The issue that seems to remain is that, due to the slackest requirements, manufacturers were almost always certifying their units with an input voltage of 115 VAC, resulting in myriads of units carrying a certification badge that would fail the same 80Plus certification requirements with an input voltage of 230 VAC. Unfortunately, this is also true for the Cybenetics standard, as the badges do not inform the user about the input voltage that the certification was attained with. However, as the Cybenetics standard revolves around average efficiency and not efficiency at specific load points, the majority of the PSUs should meet both efficiency thresholds and not the other way around.
Certification processes can be costly for manufacturers. By opting for the Cybenetics program, Corsair possibly aims to get the most value from its certification investments. Cybenetics offers more detailed and up-to-date testing methodologies, ensuring that the data provided is more reflective of real-world usage scenarios. In any case, Corsair’s shift to Cybenetics certification marks a significant development in the evaluation of PSUs and has the potential to create waves in the market.
Ultimately, this move has the potential disrupt the status quo. With Corsair's sheer size and influence in the larger power supply market, this could very well prompt other... Power Supply
Micron on Tuesday announced that the company has begun shipping its 9th Generation (G9) 276 layer TLC NAND. The next generation of NAND from the prolific memory maker, Micron's latest NAND is designed to further push the envelope on TLC NAND performance, offering significant density and performance improvements over its existing NAND technology.
Micron's G9 TLC NAND memory features 276 active layers, which is up from 232-layers in case of Micron's previous generation TLC NAND. At this point the company is being light on technical details in their official material. However in a brief interview with Blocks & Files, the company confirmed that their 276L NAND still uses a six plane architecture, which was first introduced with the 232L generation. At this point we're assuming Micron is also string-stacking two decks of NAND together, as they have been for the past couple of generations, which means we're looking at 138 layer decks.
| Micron TLC NAND Flash Memory | |||
| 276L | 232L (B58R) |
176L (B47R) |
|
| Layers | 276 | 232 | 176 |
| Decks | 2 (x138)? | 2 (x116) | 2 (x88) |
| Die Capacity | 1 Tbit | 1 Tbit | 512 Gbit |
| Die Size (mm2) | ~48.9mm2 | ~70.1mm2 | ~49.8mm2 |
| Density (Gbit/mm2) | ~21 | 14.6 | 10.3 |
| I/O Speed | 3.6 GT/s (ONFi 5.1) |
2.4 GT/s (ONFi 5.0) |
1.6 GT/s (ONFI 4.2) |
| Planes | 6 | 6 | 4 |
| CuA / PuC | Yes | Yes | Yes |
On the density front, Micron told Blocks & Files that they have improved their NAND density by 44% over their 232L generation. Which, given what we know about that generation, would put the density at around 21 Gbit/mm2. Or for a 1Tbit die of TLC NAND, that works out to a die size of roughly 48.9mm2, comparable to the die size of a 512Gbit TLC die from Micron's older 176L NAND.
Besides improving density, the other big push with Micron's newest generation of NAND was further improving its throughput. While the company's 232L NAND was built against the ONFi 5.0 specification, which topped out at transfer rates of 2400 MT/sec, their new 276L NAND can hit 3600 MT/sec, which is consistent with the ONFi 5.1 spec.
Meanwhile, the eagle-eyed will likely also pick up on Micron's ninth-generation/G9 branding, which is new to the company. Micron's has not previously used this kind of generational branding for their NAND, which up until now has simply been identified by its layer count (and before the 3D era, its feature size). Internally, this is believed to be Micron's 7th generation 3D NAND architecture. However, taking a page from the logic fab industry, Micron seems to be branding it as ninth-generation in order to keep generational parity with its competitors, who are preparing their own 8th/9th generation NAND (and thus cliam that they are the first NAND maker to ship 9th gen NAND).
And while this NAND will eventually end up in ... SSDs
As GPU families enter the later part of their lifecycles, we often see chip manufacturers start to offload stockpiles of salvaged chips that, for one reason or another, didn't make the grade for the tier of cards they normally are used in. These recovered chips are fairly unremarkable overall, but they are unsold silicon that still works and has economic value, leading to them being used in lower-tier cards so that they can be sold. And, judging by the appearance of a new video card design from MSI, it looks like NVIDIA's Ada Lovelace generation of chips has reached that stage, as the Taiwanese video card maker has put out a new GeForce RTX 4070 Ti Super card based on a salvaged AD102 GPU.
Typically based on NVIDIA's AD103 GPU, NVIDIA's GeForce RTX 4070 Ti Super series sits a step below the company's flagship RTX 4080/4090 cards, both of which are based on the bigger and badder AD102 chip. But with some number of AD102 chips inevitably failing to live up to RTX 4080 specifications, rather than being thrown out, these chips can instead be used to make RTX 4070 cards. Which is exactly what MSI has done with their new GeForce RTX 4070 Ti Super Ventus 3X Black OC graphics card.
The card itself is relatively unremarkable – using a binned AD102 chip doesn't come with any advantages, and it should perform just like regular AD103 cards – and for that reason, video card vendors rarely publicly note when they're doing a run of cards with a binned-down version of a bigger chip. However, these larger chips have a tell-tale PCB footprint that usually makes it obvious what's going on. Which, as first noticed by @wxnod, is exactly what's going on with MSI's card.

Ada Lovelace Lineup: MSI GeForce RTX 4070 TiS (AD103), RTX 4070 TiS (AD102), & RTX 4090 (AD102)
The tell, in this case, is the rear board shot provided by MSI. The larger AD102 GPU uses an equally larger mounting bracket, and is paired with a slightly more complex array of filtering capacitors on the back side of the board PCB. Ultimately, since these are visible in MSI's photos of their GeForce RTX 4070 Ti Super Ventus 3X Black OC, it's easy to compare it to other video cards and see that it has exactly the same capacitor layout as MSI's GeForce RTX 4090, thus confirming the use of an AD102 GPU.
Chip curiosities aside, all of NVIDIA GeForce RTX 4070 Ti Super graphics cards – no matter whether they are based on the AD102 or AD103 GPU – come with a GPU with 8,448 active CUDA cores and 16 GB of GDDR6X memory, so it doesn't (typically) matter which chip they carry. Otherwise, compared to a fully-enabled AD102 chip, the RTX 4070 Ti Super specifications are relatively modest, with fewer than half as many CUDA cores, underscoring how the AD102 chip being used in MSI's card is a pretty heavy salvage bin.
As for the rest of the card, MSI GeForce RTX 4070 Ti Super Ventus 3X Black OC is a relatively hefty card overall, with a cooling system to match. Being overclocked, the Ventus also has a slightly higher TDP than normal GeForce RTX 4070 Ti Super cards, weighing in at 295 Watts, or 10 Watts above baseline cards.
Meanwhile, MSI is apparently not the only video card manufacturer using salvaged AD102 chips for GeForce RTX 4070 Ti Super, either. @wxnod has also posted a screenshot obtained on an Inno3D GeForce RTX 4070 Ti Super based on an AD102 GPU.
GPUsIt is with great sadness that I find myself penning the hardest news post I’ve ever needed to write here at AnandTech. After over 27 years of covering the wide – and wild – world of computing hardware, today is AnandTech’s final day of publication.
For better or worse, we’ve reached the end of a long journey – one that started with a review of an AMD processor, and has ended with the review of an AMD processor. It’s fittingly poetic, but it is also a testament to the fact that we’ve spent the last 27 years doing what we love, covering the chips that are the lifeblood of the computing industry.
A lot of things have changed in the last quarter-century – in 1997 NVIDIA had yet to even coin the term “GPU” – and we’ve been fortunate to watch the world of hardware continue to evolve over the time period. We’ve gone from boxy desktop computers and laptops that today we’d charitably classify as portable desktops, to pocket computers where even the cheapest budget device puts the fastest PC of 1997 to shame.
The years have also brought some monumental changes to the world of publishing. AnandTech was hardly the first hardware enthusiast website, nor will we be the last. But we were fortunate to thrive in the past couple of decades, when so many of our peers did not, thanks to a combination of hard work, strategic investments in people and products, even more hard work, and the support of our many friends, colleagues, and readers.
Still, few things last forever, and the market for written tech journalism is not what it once was – nor will it ever be again. So, the time has come for AnandTech to wrap up its work, and let the next generation of tech journalists take their place within the zeitgeist.
It has been my immense privilege to write for AnandTech for the past 19 years – and to manage it as its editor-in-chief for the past decade. And while I carry more than a bit of remorse in being AnandTech’s final boss, I can at least take pride in everything we’ve accomplished over the years, whether it’s lauding some legendary products, writing technology primers that still remain relevant today, or watching new stars rise in expected places. There is still more that I had wanted AnandTech to do, but after 21,500 articles, this was a good start.
And while the AnandTech staff is riding off into the sunset, I am happy to report that the site itself won’t be going anywhere for a while. Our publisher, Future PLC, will be keeping the AnandTech website and its many articles live indefinitely. So that all of the content we’ve created over the years remains accessible and citable. Even without new articles to add to the collection, I expect that many of the things we’ve written over the past couple of decades will remain relevant for years to come – and remain accessible just as long.
The AnandTech Forums will also continue to be operated by Future’s community team and our dedicated troop of moderators. With forum threads going back to 1999 (and some active members just as long), the forums have a history almost as long and as storied as AnandTech itself (wounded monitor children, anyone?). So even when AnandTech is no longer publishing articles, we’ll still have a place for everyone to talk about the latest in technology – and have those discussions last longer than 48 hours.
Finally, for everyone who still needs their technical writing fix, our formidable opposition of the last 27 years and fellow Future brand, Tom’s Hardware, is continuing to cover the world of technology. There are a couple of familiar AnandTech faces already over there providing their accumulated expertise, and the site will continue doing its best to provide a written take on technology news.
As I look back on everything AnandTech has accomplished over the past 27 years, there are more than a few people, groups, and companies that I would like to thank on behalf of both myself and AnandTech as a whole.
First and foremost, I cannot thank enough all the editors who have worked for AnandTech over the years. T... Site Updates
The compute market has always been hungry for memory bandwidth, particularly for high-performance applications in servers and datacenters. In recent years, the explosion in core counts per socket has further accentuated this need. Despite progress in DDR speeds, the available bandwidth per core has unfortunately not seen a corresponding scaling.
The stakeholders in the industry have been attempting to address this by building additional technology on top of existing widely-adopted memory standards. With DDR5, there are currently two technologies attempting to increase the peak bandwidth beyond the official speeds. In late 2022, SK hynix introduced MCR-DIMMs meant for operating with specific Intel server platforms. On the other hand, JEDEC - the standards-setting body - also developed specifications for MR-DIMMs with a similar approach. Both of them build upon existing DDR5 technologies by attempting to combine multiple ranks to improve peak bandwidth and latency.
The MR-DIMM standard is conceptually simple - there are multiple ranks of memory modules operating at standard DDR5 speeds with a data buffer in front. The buffer operates at 2x the speed on the host interface side, allowing for essentially double the transfer rates. The challenges obviously lie in being able to operate the logic in the host memory controller at the higher speed and keeping the power consumption / thermals in check.
The first version of the JEDEC MR-DIMM standard specifies speeds of 8800 MT/s, with the next generation at 12800 MT/s. JEDEC also has a clear roadmap for this technology, keeping it in sync with the the improvements in the DDR5 standard.
Micron and Intel have been working closely in the last few quarters to bring their former's first-generation MR-DIMM lineup to the market. Intel's Xeon 6 Family with P-Cores (Granite Rapids) is the first platform to bring MR-DIMM support at 8800 MT/s on the host side. Micron's standard-sized MR-DIMMs (suitable for 1U servers) and TFF (tall form-factor) MR-DIMMs (for 2U+ servers) have been qualified for use with the same.
The benefits offered by MR-DIMMs are evident from the JEDEC specifications, allowing for increased data rates and system bandwidth, with improvements in latency. On the capacity side, allowing for additional ranks on the modules has enabled Micron to offer a 256 GB capacity point. It must be noted that some vendors are also using TSV (through-silicon vias) technology to to increase the per-package capacity at standard DDR5 speeds, but this adds additional cost and complexity that are largely absent in the MR-DIMM manufacturing process.
The tall form-factor (TFF) MR-DIMMs have a larger surface area compared to the standard-sized ones. For the same airflow configuration, this allows the DIMM to have a better thermal profile. This provides benefits for energy efficiency as well by reducing the possibility of thermal throttling.
Micron is launching a comprehensive lineup of MR-DIMMs in both standard and tall form-factors today, with multiple DRAM densities and speed options as noted above.
Micron and Intel hosted a media / analyst briefing recently to demonstrate the benefits of MR-DIMMs for Xeon 6 with P-Cores (Granite Rapids). Using a 2P configuration with 96-core Xeon 6 processors, benchmarks for different ... Memory
At FMS 2024, the technological requirements from the storage and memory subsystem took center stage. Both SSD and controller vendors had various demonstrations touting their suitability for different stages of the AI data pipeline - ingestion, preparation, training, checkpointing, and inference. Vendors like Solidigm have different types of SSDs optimized for different stages of the pipeline. At the same time, controller vendors have taken advantage of one of the features introduced recently in the NVM Express standard - Flexible Data Placement (FDP).
FDP involves the host providing information / hints about the areas where the controller could place the incoming write data in order to reduce the write amplification. These hints are generated based on specific block sizes advertised by the device. The feature is completely backwards-compatible, with non-FDP hosts working just as before with FDP-enabled SSDs, and vice-versa.
Silicon Motion's MonTitan Gen 5 Enterprise SSD Platform was announced back in 2022. Since then, Silicon Motion has been touting the flexibility of the platform, allowing its customers to incorporate their own features as part of the customization process. This approach is common in the enterprise space, as we have seen with Marvell's Bravera SC5 SSD controller in the DapuStor SSDs and Microchip's Flashtec controllers in the Longsys FORESEE enterprise SSDs.
At FMS 2024, the company was demonstrating the advantages of flexible data placement by allowing a single QLC SSD based on their MonTitan platform to take part in different stages of the AI data pipeline while maintaining the required quality of service (minimum bandwidth) for each process. The company even has a trademarked name (PerformaShape) for the firmware feature in the controller that allows the isolation of different concurrent SSD accesses (from different stages in the AI data pipeline) to guarantee this QoS. Silicon Motion claims that this scheme will enable its customers to get the maximum write performance possible from QLC SSDs without negatively impacting the performance of other types of accesses.
Silicon Motion and Phison have market leadership in the client SSD controller market with similar approaches. However, their enterprise SSD controller marketing couldn't be more different. While Phison has gone in for a turnkey solution with their Gen 5 SSD platform (to the extent of not adopting the white label route for this generation, and instead opting to get the SSDs qualified with different cloud service providers themselves), Silicon Motion is opting for a different approach. The flexibility and customization possibilities can make platforms like the MonTitan appeal to flash array vendors.
StorageKioxia's booth at FMS 2024 was a busy one with multiple technology demonstrations keeping visitors occupied. A walk-through of the BiCS 8 manufacturing process was the first to grab my attention. Kioxia and Western Digital announced the sampling of BiCS 8 in March 2023. We had touched briefly upon its CMOS Bonded Array (CBA) scheme in our coverage of Kioxial's 2Tb QLC NAND device and coverage of Western Digital's 128 TB QLC enterprise SSD proof-of-concept demonstration. At Kioxia's booth, we got more insights.
Traditionally, fabrication of flash chips involved placement of the associate logic circuitry (CMOS process) around the periphery of the flash array. The process then moved on to putting the CMOS under the cell array, but the wafer development process was serialized with the CMOS logic getting fabricated first followed by the cell array on top. However, this has some challenges because the cell array requires a high-temperature processing step to ensure higher reliability that can be detrimental to the health of the CMOS logic. Thanks to recent advancements in wafer bonding techniques, the new CBA process allows the CMOS wafer and cell array wafer to be processed independently in parallel and then pieced together, as shown in the models above.
The BiCS 8 3D NAND incorporates 218 layers, compared to 112 layers in BiCS 5 and 162 layers in BiCS 6. The company decided to skip over BiCS 7 (or, rather, it was probably a short-lived generation meant as an internal test vehicle). The generation retains the four-plane charge trap structure of BiCS 6. In its TLC avatar, it is available as a 1 Tbit device. The QLC version is available in two capacities - 1 Tbit and 2 Tbit.
Kioxia also noted that while the number of layers (218) doesn't compare favorably with the latest layer counts from the competition, its lateral scaling / cell shrinkage has enabled it to be competitive in terms of bit density as well as operating speeds (3200 MT/s). For reference, the latest shipping NAND from Micron - the G9 - has 276 layers with a bit density in TLC mode of 21 Gbit/mm2, and operates at up to 3600 MT/s. However, its 232L NAND operates only up to 2400 MT/s and has a bit density of 14.6 Gbit/mm2.
It must be noted that the CBA hybrid bonding process has advantages over the current processes used by other vendors - including Micron's CMOS under array (CuA) and SK hynix's 4D PUC (periphery-under-chip) developed in the late 2010s. It is expected that other NAND vendors will also move eventually to some variant of the hybrid bonding scheme used by Kioxia.
StorageThe USB Implementers Forum (USB-IF) introduced USB4 version 2.0 in fall 2022, and it expects systems and devices with the tech to emerge later this year and into next year. These upcoming products will largely rely on Intel's Barlow Ridge controller, a full-featured Thunderbolt 5 controller that goes above and beond the baseline USB4 v2 spec. And though extremely capable, Intel's Thunderbolt controllers are also quite expensive, and Barlow Ridge isn't expected to be any different. Fortunately, for system and device vendors that just need a basic USB4 v2 solution, ASMedia is also working on its own USB4 v2 controller.
At Computex 2024, ASMedia demonstrated a prototype of its upcoming USB4 v2 physical interface (PHY), which will support USB4 v2's new Gen 4 (160Gbps) data rates and the associated PAM-3 signal encoding. The prototype was implemented using an FPGA, as the company yet has to tape out the completed controller.
Ultimately, the purpose of showing off a FPGA-based PHY at Computex was to allow ASMedia to demonstrate their current PHY design. With the shift to PAM-3 encoding for USB4 v2, ASMedia (and the rest of the USB ecosystem) must develop significantly more complex controllers – and there's no part of that more critical than a solid and reliable PHY design.
As part of their demonstration, ASMedia had a classic eye diagram display. The eye diagram demoed has a clear opening in the center, which is indicative of good signal integrity, as the larger the eye opening, the less distortion and noise in the signal. The horizontal width of the eye opening represents the time window in which the signal can be sampled correctly, so the relatively narrow horizontal spread of the eye opening suggests that there is minimal jitter, meaning the signal transitions are consistent and predictable. Finally, the vertical height of the eye opening indicates the signal amplitude and the rather tall eye opening suggests a higher signal-to-noise ratio (SNR), meaning that the signal is strong compared to any noise present.
ASMedia itself is one of the major suppliers for discrete USB controllers, so the availability of ASMedia's USB4 v2 chip is crucial for adoption of the standard in general. While Intel will spearhead the industry with their Barlow Ridge Thunderbolt 5/USB4 v2 controller, ASMedia's controller is poised to end up in a far larger range of devices. So the importance of the company's USB4 v2 PHY demo is hard to overstate.
Demos aside, ASMedia is hoping to tape the chip out soon. If all goes well, the company expects their first USB4 v2 controllers to hit the market some time in the second half of 2025.
PeripheralsWhile Realtek is best known in the enthusiast space for for its peripheral controllers such as audio codecs and network controllers, the company also has a small-but-respectable SSD controller business that tends to fly under the radar due to its focus on entry-level and mainstream drives. But Realtek's stature in the SSD space is on the rise, as the company is not only planning new PCIe Gen5 SSD controllers, but also their first high-end, DRAM-equipped SSD controller.
For this year's Computex trade show, Realtek laid out a new SSD controller roadmap that calls for the company to release a trio of new SSD controllers over the next couple of years. First up is a new four-channel entry-level PCIe 4.0 controller, the RTS5776DL, which will be joined a bit later by a PCIe 5.0 variant, the RTS5781DL. But most interesting on Realtek's new roadmap is the final chip being planned: the eight-channel, DRAM-equipped RTS5782, which would be the company's first high-end SSD controller, capable of hitting sequential read rates as high as 14GB/second.
| Realtek NVMe SSD Controller Comparison | |||||||||
| RTS5782 | RTS5781DL | RTS5776DL | RTS5772DL | RTS5766DL | |||||
| Market Segment | High-End | Mainstream | Entry-Level | ||||||
| Error Correction | 4K LDPC | 2K LDPC | |||||||
| DRAM | DDR4, LPDDR4(X) | No | No | No | No | ||||
| Host Interface | PCIe 5.0 x4 | PCIe 5.0 x4 | PCIe 4.0 x4 | PCIe 4.0 x4 | PCIe 3.0 x4 | ||||
| NVMe Version | NVMe 2.0 | NVMe 2.0 | NVMe 2.0 | NVMe 1.4 | NVMe 1.4 | ||||
| NAND Channels, Interface Speed | 8 ch, 3600 MT/s |
4 ch, 3600 MT/s |
4 ch, 3600 MT/s |
8 ch, 1600 MT/s |
4 ch, 1200 MT/s |
||||
| Sequential Read | 14 GB/s | 10 GB/s | 7.4 GB/s | 6 GB/s | 3.2 GB/s | ||||
| Sequential Write | 12 GB/s | 10 GB/s | 7.4 GB/s | 6 GB/s | 2.2 GB/s | ||||
| 4KB Random Read IOPS | 2500k | 1400k | 1200k | - | - | ||||
| 4KB Random Write IOPS | 2500k | 1400k | 1200k | - | - | ||||
Diving a bit deeper into Realtek's roadmap, the RTS5776DL is traditional DRAM-less PCIe Gen4 x4 controller with four NAND chann... SSDs
Following a relative lull in the desktop memory industry in the previous decade, the past few years have seen a flurry of new memory standards and form factors enter development. Joining the traditional DIMM/SO-DIMM form factors, we've seen the introduction of space-efficient DDR5 CAMM2s, their LPDDR5-based counterpart the LPCAMM2, and the high-clockspeed optimized CUDIMM. But JEDEC, the industry organization behind these efforts, is not done there. In a press release sent out at the start of the week, the group announced that it is working on standards for DDR5 Multiplexed Rank DIMMs (MRDIMM) for servers, as well as an updated LPCAMM standard to go with next-generation LPDDR6 memory.
Just last week Micron introduced the industry's first DDR5 MRDIMMs, which are timed to launch alongside Intel's Xeon 6 server platforms. But while Intel and its partners are moving full steam ahead on MRDIMMs, the MRDIMM specification has not been fully ratified by JEDEC itself. All told, it's not unusual to see Intel pushing the envelope here on new memory technologies (the company is big enough to bootstrap its own ecosystem). But as MRDIMMs are ultimately meant to be more than just a tool for Intel, a proper industry standard is still needed – even if that takes a bit longer.
Under the hood, MRDIMMs continue to use DDR5 components, form-factor, pinout, SPD, power management ICs (PMICs), and thermal sensors. The major change with the technology is the introduction of multiplexing, which combines multiple data signals over a single channel. The MRDIMM standard also adds RCD/DB logic in a bid to boost performance, increase capacity of memory modules up to 256 GB (for now), shrink latencies, and reduce power consumption of high-end memory subsystems. And, perhaps key to MRDIMM adoption, the standard is being implemented as a backwards-compatible extension to traditional DDR5 RDIMMs, meaning that MRDIMM-capable servers can use either RDIMMs or MRDIMMs, depending on how the operator opts to configure the system.
The MRDIMM standard aims to double the peak bandwidth to 12.8 Gbps, increasing pin speed and supporting more than two ranks. Additionally, a "Tall MRDIMM" form factor is in the works (and pictured above), which is designed to allow for higher capacity DIMMs by providing more area for laying down memory chips. Currently, ultra high capacity DIMMs require using expensive, multi-layer DRAM packages that use through-silicon vias (3DS packaging) to attach the individual DRAM dies; a Tall MRDIMM, on the other hand, can just use a larger number of commodity DRAM chips. Overall, the Tall MRDIMM form factor enables twice the number of DRAM single-die packages on the DIMM.
Meanwhile, this week's announcement from JEDEC offers the first significant insight into what to expect from LPDDR6 CAMMs. And despite LPDDR5 CAMMs having barely made it out the door, some significant shifts with LPDDR6 itself means that JEDEC will need to make some major changes to the CAMM standard to accommodate the newer memory type.

JEDEC Presentation: The CAMM2 Journey and Future Potential
Besides the higher memory clockspeeds allowed by LPDDR6 – JEDEC is targeting data transfer rates of 14.4 GT/s and higher – the new memory form-factor will also incorporate an altogether new connector array. This is to accommodate LPDDR6's wider memory bus, which sees the channel width of an individual memory chip grow from 16-bits wide to 24-bits wide. As a result, the current LPCAMM design, which is intended to match the PC standard of a cumulative 128-bit (16x8) design needs to be reconfigured to match LPDDR6's alterations.
Ultimately, JEDEC is targeting a 24-bit subhannel/48-bit channel design, which will result in a 192-bit wide LPCAMM. While the LPCAMM connector itself is set to grow from 14 rows of pins to possibly as high as 20. New memory technologies typically require new DIMMs to begin with, so it's important to clarify that this is not unexpected, but at th... Memory
Social Plugin