Rapidus, a Japan-based company developing 2nm process technology and aiming to commercialize it in 2027, will receive a huge government grant for its ongoing projects. The Japanese government will support Rapidus with subsidies totaling ¥590 billion yen ($3.89 billion). In addition to developing its 2nm production node and spending on cleanroom equipment, Rapidus will also fund the development of multi-chiplet packaging technology.
This extra funding will significantly help the company's ambitious plans. With the government's total support now at ¥920 billion ($6.068 billion), Rapidus is getting a solid push to become a significant player in the semiconductor industry. The whole project is expected to cost around ¥5 trillion ($32.983 billion), so the funding is not quite there yet. Meanwhile, the company may get enough financing with support from the Japanese government and large Japanese conglomerates like Toyota Motor and Nippon Telegraph and Telephone.
According to Atsuyoshi Koike, Rapidus's chief executive, the company is on track to start testing its production by April 2025 and aims to begin large-scale production by 2027. Commercial production of 2nm chips is set to commence sometime in 2025.
In addition to developing its 2nm fabrication process in collaboration with IBM and building its manufacturing facility, Rapidus is also working on advanced packaging technology for multi-chiplet system-in-packages (SiPs). The latest government subsidies include more than ¥50 billion ($329.85 million) for research and development in this area, the first time Japan has provided subsidies for such technologies.
It is noteworthy that Rapidus will use a section of Seiko Epson Corporation's Chitose Plant (located in Chitose City, Hokkaido) for its back-end packaging processes. This plant is near the company's fab, which is currently being built in Bibi World, an industrial park in Chitose City. This space will be dedicated to pilot-stage research and development activities.
SemiconductorsDuring their opening keynote at Computex 2024, AMD announced their intention to launch a pair of new Ryzen 5000 processors for their legacy AM4 platform. The new chips, both getting the XT suffix, will be the Ryzen 9 5900XT, a 16 core Zen 3 part, while the Ryzen 7 5800XT will be an 8 core Zen 3.
The new chips are intended to underscore AMD's ongoing commitment to supporting their consumer platforms over several years. And while the specification changes are rather minor overall – the Zen 3 CPU architecture has long since been taken as far as it can reasonable go – it does give AMD a chance to refresh the platform by slinging hardware at new price points. AMD did something very similar for the Ryzen 3000 generation with the late-model Ryzen 3000 XT chips.
| AMD Ryzen 5000XT Series Processors (Zen 3) |
||||||
| AnandTech | Cores / Threads |
Base Freq |
Turbo Freq |
L2 Cache |
L3 Cache |
TDP |
| Ryzen 9 5950X | 16C / 32T | 3.4 GHz | 4.9 GHz | 8 MB | 64 MB | 105 W |
| Ryzen 9 5900XT | 16C / 32T | 3.3 GHz | 4.8 GHz | 8 MB | 64 MB | 105 W |
| Ryzen 9 5900X | 12C / 24T | 3.7 GHz | 4.8 GHz | 6 MB | 64 MB | 105 W |
| Ryzen 7 5800XT | 8C / 16T | 3.8 GHz | 4.8 GHz | 4 MB | 32 MB | 105 W |
| Ryzen 7 5800X | 8C / 16T | 3.8 GHz | 4.7 GHz | 4 MB | 32 MB | 105 W |
We've dedicated many column inches covering Zen 3 and the Ryzen 5000 series since they launched in late 2020, so there isn't anything new to add here. Zen 3 is no longer AMD's latest and greatest, but the platform as a whole is quite cheap to produce, making it a viable budget offering for new builds, or offering one last upgrade for old builds.
The Ryzen 9 5900XT is a 16 core part, and isn't to be confused with the Ryzen 9 5900X, which is a 12 core part. It ships with a peak turbo clockspeed of 4.8GHz, 100 MHz lower than the top-tier Ryzen 9 5950X. This makes it's XT designation somewhat of a misnomer compared to previous generations of XT chips, although it's clear that AMD has boxed themselves into a corner with their naming scheme, as they both need a way to designate that this is a new chip, and yet still place it below the 5950X.
Looking at the second chip, we have the Ryzen 7 5800XT. This is an 8 core part that does improve on its predecessor, offering a 4.8GHz max turbo clock that is 100MHz higher than the Ryzen 7 5800X's. Both chips otherwise share the same characteristics, including 6 MB of L2 cache and 32 MB of L3 cache, and all four of the chips – including the two new XT series and the corresponding X series chips – all come with a 105 Watt TDP.
In terms of motherboard compatibility, all of the AM4 motherboards that currently support the Ryzen 5000 series are also compatible with the Ryzen 5000XT series, although users are likely to need to perform a firmware update to ensure maximum compatibility; they are the same chips, but the microcodes are likely different.
AMD has provided some gaming performance figures comparing the Ryzen 9 5900XT to Intel's 13th Gen Core i7-13700K. It does offer very modest yet marginal gains in games by up to 4%; it's not mind-blowing, but the... CPUs
Kioxia's booth at FMS 2024 was a busy one with multiple technology demonstrations keeping visitors occupied. A walk-through of the BiCS 8 manufacturing process was the first to grab my attention. Kioxia and Western Digital announced the sampling of BiCS 8 in March 2023. We had touched briefly upon its CMOS Bonded Array (CBA) scheme in our coverage of Kioxial's 2Tb QLC NAND device and coverage of Western Digital's 128 TB QLC enterprise SSD proof-of-concept demonstration. At Kioxia's booth, we got more insights.
Traditionally, fabrication of flash chips involved placement of the associate logic circuitry (CMOS process) around the periphery of the flash array. The process then moved on to putting the CMOS under the cell array, but the wafer development process was serialized with the CMOS logic getting fabricated first followed by the cell array on top. However, this has some challenges because the cell array requires a high-temperature processing step to ensure higher reliability that can be detrimental to the health of the CMOS logic. Thanks to recent advancements in wafer bonding techniques, the new CBA process allows the CMOS wafer and cell array wafer to be processed independently in parallel and then pieced together, as shown in the models above.
The BiCS 8 3D NAND incorporates 218 layers, compared to 112 layers in BiCS 5 and 162 layers in BiCS 6. The company decided to skip over BiCS 7 (or, rather, it was probably a short-lived generation meant as an internal test vehicle). The generation retains the four-plane charge trap structure of BiCS 6. In its TLC avatar, it is available as a 1 Tbit device. The QLC version is available in two capacities - 1 Tbit and 2 Tbit.
Kioxia also noted that while the number of layers (218) doesn't compare favorably with the latest layer counts from the competition, its lateral scaling / cell shrinkage has enabled it to be competitive in terms of bit density as well as operating speeds (3200 MT/s). For reference, the latest shipping NAND from Micron - the G9 - has 276 layers with a bit density in TLC mode of 21 Gbit/mm2, and operates at up to 3600 MT/s. However, its 232L NAND operates only up to 2400 MT/s and has a bit density of 14.6 Gbit/mm2.
It must be noted that the CBA hybrid bonding process has advantages over the current processes used by other vendors - including Micron's CMOS under array (CuA) and SK hynix's 4D PUC (periphery-under-chip) developed in the late 2010s. It is expected that other NAND vendors will also move eventually to some variant of the hybrid bonding scheme used by Kioxia.
Storage
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