Samsung Validates LPDDR5X Running at 10.7 GT/sec with MediaTek's Dimensity 9400 SoC
Samsung has successfully validated its new LPDDR5X-10700 memory with MediaTek's upcoming Dimensity platform. At present, 10.7 GT/s is the highest performing speed grade of LPDDR5X DRAM slated to be released this year, so the upcoming Dimensity 9400 system-on-chip will get the highest memory bandwidth available for a mobile application processor.
The verification process involved Samsung's 16 GB LPDDR5X package and MediaTek's soon-to-be-announced Dimensity 9400 SoC for high-end 5G smartphones. Usage of LPDDR5X-10700 provides a memory bandwidth of 85.6 GB/second over a 64-bit interface, which will be available for bandwidth-hungry applications like graphics and generative AI.
"Working together with Samsung Electronics has made it possible for MediaTek's next-generation Dimensity chipset to become the world's first to be validated at LPDDR5X operating speeds up to 10.7Gbps, enabling upcoming devices to deliver AI functionality and mobile performance at a level we have never seen before," said JC Hsu, Corporate Senior Vice President at MediaTek. "This updated architecture will make it easier for developers and users to leverage more AI capabilities and take advantage of more features with less impact on battery life."
Samsung's LPDDR5X 10.7 GT/s memory in made on the company's 12nm-class DRAM process technology and is said to provide a more than 25% improvement in power efficiency over previous-generation LPDDR5X, in addition to extra performance. This will positively affect improved user experience, including enhanced on-device AI capabilities, such as faster voice-to-text conversion, and better quality graphics.
Overall, the two companies completed this process in just three months. Though it remains to be seen when smartphones based on the Dimensity 9400 application processor and LPDDR5X memory are set to be available on the market, as MediaTek has not yet even formally announced the SoC itself.
"Through our strategic cooperation with MediaTek, Samsung has verified the industry's fastest LPDDR5X DRAM that is poised to lead the AI smartphone market," said YongCheol Bae, Executive Vice President of Memory Product Planning at Samsung Electronics. "Samsung will continue to innovate through active collaboration with customers and provide optimum solutions for the on-device AI era."
Memory
Posted by The Techinical Support
Kioxia Details BiCS 8 NAND at FMS 2024: 218 Layers With Superior Scaling
Kioxia's booth at FMS 2024 was a busy one with multiple technology demonstrations keeping visitors occupied. A walk-through of the BiCS 8 manufacturing process was the first to grab my attention. Kioxia and Western Digital announced the sampling of BiCS 8 in March 2023. We had touched briefly upon its CMOS Bonded Array (CBA) scheme in our coverage of Kioxial's 2Tb QLC NAND device and coverage of Western Digital's 128 TB QLC enterprise SSD proof-of-concept demonstration. At Kioxia's booth, we got more insights.
Traditionally, fabrication of flash chips involved placement of the associate logic circuitry (CMOS process) around the periphery of the flash array. The process then moved on to putting the CMOS under the cell array, but the wafer development process was serialized with the CMOS logic getting fabricated first followed by the cell array on top. However, this has some challenges because the cell array requires a high-temperature processing step to ensure higher reliability that can be detrimental to the health of the CMOS logic. Thanks to recent advancements in wafer bonding techniques, the new CBA process allows the CMOS wafer and cell array wafer to be processed independently in parallel and then pieced together, as shown in the models above.
The BiCS 8 3D NAND incorporates 218 layers, compared to 112 layers in BiCS 5 and 162 layers in BiCS 6. The company decided to skip over BiCS 7 (or, rather, it was probably a short-lived generation meant as an internal test vehicle). The generation retains the four-plane charge trap structure of BiCS 6. In its TLC avatar, it is available as a 1 Tbit device. The QLC version is available in two capacities - 1 Tbit and 2 Tbit.
Kioxia also noted that while the number of layers (218) doesn't compare favorably with the latest layer counts from the competition, its lateral scaling / cell shrinkage has enabled it to be competitive in terms of bit density as well as operating speeds (3200 MT/s). For reference, the latest shipping NAND from Micron - the G9 - has 276 layers with a bit density in TLC mode of 21 Gbit/mm2, and operates at up to 3600 MT/s. However, its 232L NAND operates only up to 2400 MT/s and has a bit density of 14.6 Gbit/mm2.
It must be noted that the CBA hybrid bonding process has advantages over the current processes used by other vendors - including Micron's CMOS under array (CuA) and SK hynix's 4D PUC (periphery-under-chip) developed in the late 2010s. It is expected that other NAND vendors will also move eventually to some variant of the hybrid bonding scheme used by Kioxia.
Storage
Kioxia Demonstrates RAID Offload Scheme for NVMe Drives
At FMS 2024, Kioxia had a proof-of-concept demonstration of their proposed a new RAID offload methodology for enterprise SSDs. The impetus for this is quite clear: as SSDs get faster in each generation, RAID arrays have a major problem of maintaining (and scaling up) performance. Even in cases where the RAID operations are handled by a dedicated RAID card, a simple write request in, say, a RAID 5 array would involve two reads and two writes to different drives. In cases where there is no hardware acceleration, the data from the reads needs to travel all the way back to the CPU and main memory for further processing before the writes can be done.
Kioxia has proposed the use of the PCIe direct memory access feature along with the SSD controller's controller memory buffer (CMB) to avoid the movement of data up to the CPU and back. The required parity computation is done by an accelerator block resident within the SSD controller.
In Kioxia's PoC implementation, the DMA engine can access the entire host address space (including the peer SSD's BAR-mapped CMB), allowing it to receive and transfer data as required from neighboring SSDs on the bus. Kioxia noted that their offload PoC saw close to 50% reduction in CPU utilization and upwards of 90% reduction in system DRAM utilization compared to software RAID done on the CPU. The proposed offload scheme can also handle scrubbing operations without taking up the host CPU cycles for the parity computation task.
Kioxia has already taken steps to contribute these features to the NVM Express working group. If accepted, the proposed offload scheme will be part of a standard that could become widely available across multiple SSD vendors.
Storage
Kioxia Details BiCS 8 NAND at FMS 2024: 218 Layers With Superior Scaling
Kioxia's booth at FMS 2024 was a busy one with multiple technology demonstrations keeping visitors occupied. A walk-through of the BiCS 8 manufacturing process was the first to grab my attention. Kioxia and Western Digital announced the sampling of BiCS 8 in March 2023. We had touched briefly upon its CMOS Bonded Array (CBA) scheme in our coverage of Kioxial's 2Tb QLC NAND device and coverage of Western Digital's 128 TB QLC enterprise SSD proof-of-concept demonstration. At Kioxia's booth, we got more insights.
Traditionally, fabrication of flash chips involved placement of the associate logic circuitry (CMOS process) around the periphery of the flash array. The process then moved on to putting the CMOS under the cell array, but the wafer development process was serialized with the CMOS logic getting fabricated first followed by the cell array on top. However, this has some challenges because the cell array requires a high-temperature processing step to ensure higher reliability that can be detrimental to the health of the CMOS logic. Thanks to recent advancements in wafer bonding techniques, the new CBA process allows the CMOS wafer and cell array wafer to be processed independently in parallel and then pieced together, as shown in the models above.
The BiCS 8 3D NAND incorporates 218 layers, compared to 112 layers in BiCS 5 and 162 layers in BiCS 6. The company decided to skip over BiCS 7 (or, rather, it was probably a short-lived generation meant as an internal test vehicle). The generation retains the four-plane charge trap structure of BiCS 6. In its TLC avatar, it is available as a 1 Tbit device. The QLC version is available in two capacities - 1 Tbit and 2 Tbit.
Kioxia also noted that while the number of layers (218) doesn't compare favorably with the latest layer counts from the competition, its lateral scaling / cell shrinkage has enabled it to be competitive in terms of bit density as well as operating speeds (3200 MT/s). For reference, the latest shipping NAND from Micron - the G9 - has 276 layers with a bit density in TLC mode of 21 Gbit/mm2, and operates at up to 3600 MT/s. However, its 232L NAND operates only up to 2400 MT/s and has a bit density of 14.6 Gbit/mm2.
It must be noted that the CBA hybrid bonding process has advantages over the current processes used by other vendors - including Micron's CMOS under array (CuA) and SK hynix's 4D PUC (periphery-under-chip) developed in the late 2010s. It is expected that other NAND vendors will also move eventually to some variant of the hybrid bonding scheme used by Kioxia.
Storage
Kioxia Demonstrates RAID Offload Scheme for NVMe Drives
At FMS 2024, Kioxia had a proof-of-concept demonstration of their proposed a new RAID offload methodology for enterprise SSDs. The impetus for this is quite clear: as SSDs get faster in each generation, RAID arrays have a major problem of maintaining (and scaling up) performance. Even in cases where the RAID operations are handled by a dedicated RAID card, a simple write request in, say, a RAID 5 array would involve two reads and two writes to different drives. In cases where there is no hardware acceleration, the data from the reads needs to travel all the way back to the CPU and main memory for further processing before the writes can be done.
Kioxia has proposed the use of the PCIe direct memory access feature along with the SSD controller's controller memory buffer (CMB) to avoid the movement of data up to the CPU and back. The required parity computation is done by an accelerator block resident within the SSD controller.
In Kioxia's PoC implementation, the DMA engine can access the entire host address space (including the peer SSD's BAR-mapped CMB), allowing it to receive and transfer data as required from neighboring SSDs on the bus. Kioxia noted that their offload PoC saw close to 50% reduction in CPU utilization and upwards of 90% reduction in system DRAM utilization compared to software RAID done on the CPU. The proposed offload scheme can also handle scrubbing operations without taking up the host CPU cycles for the parity computation task.
Kioxia has already taken steps to contribute these features to the NVM Express working group. If accepted, the proposed offload scheme will be part of a standard that could become widely available across multiple SSD vendors.
Storage
The Endorfy Fortis 5 Dual Fan CPU Cooler Review: Towering Value Standard CPU coolers, while adequate for managing basic thermal loads, often fall short in terms of noise reduction and superior cooling efficiency. This limitation drives advanced users and system builders to seek aftermarket solutions tailored to their specific needs. The high-end aftermarket cooler market is highly competitive, with manufacturers striving to offer products with exceptional performance.
Endorfy, previously known as SilentiumPC, is a Polish manufacturer that has undergone a significant transformation to expand its presence in global markets. The brand is known for delivering high-performance cooling solutions with a strong focus on balancing efficiency and affordability. By rebranding as Endorfy, the company aims to enter premium market segments while continuing to offer reliable, high-quality cooling products.
SilentiumPC became very popular in the value/mainstream segments of the PC market with their products, the spearhead of which probably was the Fera 5 cooler that we reviewed a little over two years ago and had a remarkable value for money. Today’s review places Endorfy’s largest CPU cooler, the Fortis 5 Dual Fan, on our laboratory test bench. The Fortis 5 is the largest CPU air cooler the company currently offers and is significantly more expensive than the Fera 5, yet it still is a single-tower cooler that strives to strike a balance between value, compatibility, and performance.
Cases/Cooling/PSUs
The Endorfy Fortis 5 Dual Fan CPU Cooler Review: Towering Value Standard CPU coolers, while adequate for managing basic thermal loads, often fall short in terms of noise reduction and superior cooling efficiency. This limitation drives advanced users and system builders to seek aftermarket solutions tailored to their specific needs. The high-end aftermarket cooler market is highly competitive, with manufacturers striving to offer products with exceptional performance.
Endorfy, previously known as SilentiumPC, is a Polish manufacturer that has undergone a significant transformation to expand its presence in global markets. The brand is known for delivering high-performance cooling solutions with a strong focus on balancing efficiency and affordability. By rebranding as Endorfy, the company aims to enter premium market segments while continuing to offer reliable, high-quality cooling products.
SilentiumPC became very popular in the value/mainstream segments of the PC market with their products, the spearhead of which probably was the Fera 5 cooler that we reviewed a little over two years ago and had a remarkable value for money. Today’s review places Endorfy’s largest CPU cooler, the Fortis 5 Dual Fan, on our laboratory test bench. The Fortis 5 is the largest CPU air cooler the company currently offers and is significantly more expensive than the Fera 5, yet it still is a single-tower cooler that strives to strike a balance between value, compatibility, and performance.
Cases/Cooling/PSUs
CXL Gathers Momentum at FMS 2024
![](https://twitter.com/share?url=https://compbuddey.blogspot.com/2024/07/samsung-validates-lpddr5x-running-at_65.html&text=Samsung Validates LPDDR5X Running at 10.7 GT/sec with MediaTek's Dimensity 9400 SoC <p align="center"><a href="https://www.anandtech.com/show/21475/samsung-validates-lpddr5x-107-gts-with-mediateks-dimensity-9400-soc"><img src="https://images.anandtech.com/doci/21475/Samsung-Semiconductors-LPDDR5X-MediaTek-Platform-Validation_main2_crop_575px.jpg" alt="" /></a></p><p><p>Samsung has successfully validated its new LPDDR5X-10700 memory with MediaTek's upcoming Dimensity platform. At present, <a href="https://www.anandtech.com/show/21354/samsung-unveils-world-s-fastest-lpddr5x-memory-10-7-gt-s">10.7 GT/s is the highest performing speed grade of LPDDR5X DRAM</a> slated to be released this year, so the upcoming Dimensity 9400 system-on-chip will get the highest memory bandwidth available for a mobile application processor.</p>
<p>The verification process involved Samsung's 16 GB LPDDR5X package and MediaTek's soon-to-be-announced Dimensity 9400 SoC for high-end 5G smartphones. Usage of LPDDR5X-10700 provides a memory bandwidth of 85.6 GB/second over a 64-bit interface, which will be available for bandwidth-hungry applications like graphics and generative AI.</p>
<p>"Working together with Samsung Electronics has made it possible for MediaTek's next-generation Dimensity chipset to become the world's first to be validated at LPDDR5X operating speeds up to 10.7Gbps, enabling upcoming devices to deliver AI functionality and mobile performance at a level we have never seen before," said JC Hsu, Corporate Senior Vice President at MediaTek. "This updated architecture will make it easier for developers and users to leverage more AI capabilities and take advantage of more features with less impact on battery life."</p>
<p>Samsung's LPDDR5X 10.7 GT/s memory in made on the company's 12nm-class DRAM process technology and is said to provide a more than 25% improvement in power efficiency over previous-generation LPDDR5X, in addition to extra performance. This will positively affect improved user experience, including enhanced on-device AI capabilities, such as faster voice-to-text conversion, and better quality graphics.</p>
<p>Overall, the two companies completed this process in just three months. Though it remains to be seen when smartphones based on the Dimensity 9400 application processor and LPDDR5X memory are set to be available on the market, as MediaTek has not yet even formally announced the SoC itself.</p>
<p>"Through our strategic cooperation with MediaTek, Samsung has verified the industry's fastest LPDDR5X DRAM that is poised to lead the AI smartphone market," said YongCheol Bae, Executive Vice President of Memory Product Planning at Samsung Electronics. "Samsung will continue to innovate through active collaboration with customers and provide optimum solutions for the on-device AI era."</p>
</p> Memory){kind=link}
![](https://www.pinterest.com/pin/create/button/?url=https://compbuddey.blogspot.com/2024/07/samsung-validates-lpddr5x-running-at_65.html&media=https://lh3.googleusercontent.com/blogger_img_proxy/AEn0k_t4cfQL3PbpZdK0n0PQYV6kp5cifZVJy-MtY7ZPMb-wKgEii4x2FJTKaxR873iSKDo4BFRUgg4j2QdvasjwTPLvXVWnLWm-qge-7ROUJeACyDv5av_yedvTWR4joLubcOZ-wZJzlDMhDcjOTnJIck4YJMXqQrHFAgZAHwgHEhrd4moadZ5t0N3XJJems1D0C32ZzaDU4tZDrNGm&description=Samsung Validates LPDDR5X Running at 10.7 GT/sec with MediaTek's Dimensity 9400 SoC <p align="center"><a href="https://www.anandtech.com/show/21475/samsung-validates-lpddr5x-107-gts-with-mediateks-dimensity-9400-soc"><img src="https://images.anandtech.com/doci/21475/Samsung-Semiconductors-LPDDR5X-MediaTek-Platform-Validation_main2_crop_575px.jpg" alt="" /></a></p><p><p>Samsung has successfully validated its new LPDDR5X-10700 memory with MediaTek's upcoming Dimensity platform. At present, <a href="https://www.anandtech.com/show/21354/samsung-unveils-world-s-fastest-lpddr5x-memory-10-7-gt-s">10.7 GT/s is the highest performing speed grade of LPDDR5X DRAM</a> slated to be released this year, so the upcoming Dimensity 9400 system-on-chip will get the highest memory bandwidth available for a mobile application processor.</p>
<p>The verification process involved Samsung's 16 GB LPDDR5X package and MediaTek's soon-to-be-announced Dimensity 9400 SoC for high-end 5G smartphones. Usage of LPDDR5X-10700 provides a memory bandwidth of 85.6 GB/second over a 64-bit interface, which will be available for bandwidth-hungry applications like graphics and generative AI.</p>
<p>"Working together with Samsung Electronics has made it possible for MediaTek's next-generation Dimensity chipset to become the world's first to be validated at LPDDR5X operating speeds up to 10.7Gbps, enabling upcoming devices to deliver AI functionality and mobile performance at a level we have never seen before," said JC Hsu, Corporate Senior Vice President at MediaTek. "This updated architecture will make it easier for developers and users to leverage more AI capabilities and take advantage of more features with less impact on battery life."</p>
<p>Samsung's LPDDR5X 10.7 GT/s memory in made on the company's 12nm-class DRAM process technology and is said to provide a more than 25% improvement in power efficiency over previous-generation LPDDR5X, in addition to extra performance. This will positively affect improved user experience, including enhanced on-device AI capabilities, such as faster voice-to-text conversion, and better quality graphics.</p>
<p>Overall, the two companies completed this process in just three months. Though it remains to be seen when smartphones based on the Dimensity 9400 application processor and LPDDR5X memory are set to be available on the market, as MediaTek has not yet even formally announced the SoC itself.</p>
<p>"Through our strategic cooperation with MediaTek, Samsung has verified the industry's fastest LPDDR5X DRAM that is poised to lead the AI smartphone market," said YongCheol Bae, Executive Vice President of Memory Product Planning at Samsung Electronics. "Samsung will continue to innovate through active collaboration with customers and provide optimum solutions for the on-device AI era."</p>
</p> Memory){kind=link}
![](https://web.whatsapp.com/send?text=Samsung Validates LPDDR5X Running at 10.7 GT/sec with MediaTek's Dimensity 9400 SoC <p align="center"><a href="https://www.anandtech.com/show/21475/samsung-validates-lpddr5x-107-gts-with-mediateks-dimensity-9400-soc"><img src="https://images.anandtech.com/doci/21475/Samsung-Semiconductors-LPDDR5X-MediaTek-Platform-Validation_main2_crop_575px.jpg" alt="" /></a></p><p><p>Samsung has successfully validated its new LPDDR5X-10700 memory with MediaTek's upcoming Dimensity platform. At present, <a href="https://www.anandtech.com/show/21354/samsung-unveils-world-s-fastest-lpddr5x-memory-10-7-gt-s">10.7 GT/s is the highest performing speed grade of LPDDR5X DRAM</a> slated to be released this year, so the upcoming Dimensity 9400 system-on-chip will get the highest memory bandwidth available for a mobile application processor.</p>
<p>The verification process involved Samsung's 16 GB LPDDR5X package and MediaTek's soon-to-be-announced Dimensity 9400 SoC for high-end 5G smartphones. Usage of LPDDR5X-10700 provides a memory bandwidth of 85.6 GB/second over a 64-bit interface, which will be available for bandwidth-hungry applications like graphics and generative AI.</p>
<p>"Working together with Samsung Electronics has made it possible for MediaTek's next-generation Dimensity chipset to become the world's first to be validated at LPDDR5X operating speeds up to 10.7Gbps, enabling upcoming devices to deliver AI functionality and mobile performance at a level we have never seen before," said JC Hsu, Corporate Senior Vice President at MediaTek. "This updated architecture will make it easier for developers and users to leverage more AI capabilities and take advantage of more features with less impact on battery life."</p>
<p>Samsung's LPDDR5X 10.7 GT/s memory in made on the company's 12nm-class DRAM process technology and is said to provide a more than 25% improvement in power efficiency over previous-generation LPDDR5X, in addition to extra performance. This will positively affect improved user experience, including enhanced on-device AI capabilities, such as faster voice-to-text conversion, and better quality graphics.</p>
<p>Overall, the two companies completed this process in just three months. Though it remains to be seen when smartphones based on the Dimensity 9400 application processor and LPDDR5X memory are set to be available on the market, as MediaTek has not yet even formally announced the SoC itself.</p>
<p>"Through our strategic cooperation with MediaTek, Samsung has verified the industry's fastest LPDDR5X DRAM that is poised to lead the AI smartphone market," said YongCheol Bae, Executive Vice President of Memory Product Planning at Samsung Electronics. "Samsung will continue to innovate through active collaboration with customers and provide optimum solutions for the on-device AI era."</p>
</p> Memory | https://compbuddey.blogspot.com/2024/07/samsung-validates-lpddr5x-running-at_65.html){kind=link}
![](mailto:?subject=Samsung Validates LPDDR5X Running at 10.7 GT/sec with MediaTek's Dimensity 9400 SoC <p align="center"><a href="https://www.anandtech.com/show/21475/samsung-validates-lpddr5x-107-gts-with-mediateks-dimensity-9400-soc"><img src="https://images.anandtech.com/doci/21475/Samsung-Semiconductors-LPDDR5X-MediaTek-Platform-Validation_main2_crop_575px.jpg" alt="" /></a></p><p><p>Samsung has successfully validated its new LPDDR5X-10700 memory with MediaTek's upcoming Dimensity platform. At present, <a href="https://www.anandtech.com/show/21354/samsung-unveils-world-s-fastest-lpddr5x-memory-10-7-gt-s">10.7 GT/s is the highest performing speed grade of LPDDR5X DRAM</a> slated to be released this year, so the upcoming Dimensity 9400 system-on-chip will get the highest memory bandwidth available for a mobile application processor.</p>
<p>The verification process involved Samsung's 16 GB LPDDR5X package and MediaTek's soon-to-be-announced Dimensity 9400 SoC for high-end 5G smartphones. Usage of LPDDR5X-10700 provides a memory bandwidth of 85.6 GB/second over a 64-bit interface, which will be available for bandwidth-hungry applications like graphics and generative AI.</p>
<p>"Working together with Samsung Electronics has made it possible for MediaTek's next-generation Dimensity chipset to become the world's first to be validated at LPDDR5X operating speeds up to 10.7Gbps, enabling upcoming devices to deliver AI functionality and mobile performance at a level we have never seen before," said JC Hsu, Corporate Senior Vice President at MediaTek. "This updated architecture will make it easier for developers and users to leverage more AI capabilities and take advantage of more features with less impact on battery life."</p>
<p>Samsung's LPDDR5X 10.7 GT/s memory in made on the company's 12nm-class DRAM process technology and is said to provide a more than 25% improvement in power efficiency over previous-generation LPDDR5X, in addition to extra performance. This will positively affect improved user experience, including enhanced on-device AI capabilities, such as faster voice-to-text conversion, and better quality graphics.</p>
<p>Overall, the two companies completed this process in just three months. Though it remains to be seen when smartphones based on the Dimensity 9400 application processor and LPDDR5X memory are set to be available on the market, as MediaTek has not yet even formally announced the SoC itself.</p>
<p>"Through our strategic cooperation with MediaTek, Samsung has verified the industry's fastest LPDDR5X DRAM that is poised to lead the AI smartphone market," said YongCheol Bae, Executive Vice President of Memory Product Planning at Samsung Electronics. "Samsung will continue to innovate through active collaboration with customers and provide optimum solutions for the on-device AI era."</p>
</p> Memory&body=https://compbuddey.blogspot.com/2024/07/samsung-validates-lpddr5x-running-at_65.html){kind=link}
The CXL consortium has had a regular presence at FMS (which rechristened itself from 'Flash Memory Summit' to the 'Future of Memory and Storage' this year). Back at FMS 2022, the company had announced v3.0 of the CXL specifications. This was followed by CXL 3.1's introduction at Supercomputing 2023. Having started off as a host to device interconnect standard, it had slowly subsumed other competing standards such as OpenCAPI and Gen-Z. As a result, the specifications started to encompass a wide variety of use-cases by building a protocol on top of the the ubiquitous PCIe expansion bus. The CXL consortium comprises of heavyweights such as AMD and Intel, as well as a large number of startup companies attempting to play in different segments on the device side. At FMS 2024, CXL had a prime position in the booth demos of many vendors.
The migration of server platforms from DDR4 to DDR5, along with the rise of workloads demanding large RAM capacity (but not particularly sensitive to either memory bandwidth or latency), has opened up memory expansion modules as one of the first set of widely available CXL devices. Over the last couple of years, we have had product announcements from Samsung and Micron in this area.
SK hynix CMM-DDR5 CXL Memory Module and HMSDK
At FMS 2024, SK hynix was showing off their DDR5-based CMM-DDR5 CXL memory module with a 128 GB capacity. The company was also detailing their associated Heterogeneous Memory Software Development Kit (HMSDK) - a set of libraries and tools at both the kernel and user levels aimed at increasing the ease of use of CXL memory. This is achieved in part by considering the memory pyramid / hierarchy and relocating the data between the server's main memory (DRAM) and the CXL device based on usage frequency.
The CMM-DDR5 CXL memory module comes in the SDFF form-factor (E3.S 2T) with a PCIe 3.0 x8 host interface. The internal memory is based on 1α technology DRAM, and the device promises DDR5-class bandwidth and latency within a single NUMA hop. As these memory modules are meant to be used in datacenters and enterprises, the firmware includes features for RAS (reliability, availability, and serviceability) along with secure boot and other management features.
SK hynix was also demonstrating Niagara 2.0 - a hardware solution (currently based on FPGAs) to enable memory pooling and sharing - i.e, connecting multiple CXL memories to allow different hosts (CPUs and GPUs) to optimally share their capacity. The previous version only allowed capacity sharing, but the latest version enables sharing of data also. SK hynix had presented these solutions at the CXL DevCon 2024 earlier this year, but some progress seems to have been made in finalizing the specifications of the CMM-DDR5 at FMS 2024.
Microchip and Micron Demonstrate CZ120 CXL Memory Expansion Module
Micron had unveiled the CZ120 CXL Memory Expansion Module last year based on the Microchip SMC 2000 series CXL memory controller. At FMS 2024, Micron and Microchip had a demonstration of the module on a Granite Rapids server.
Additional insights into the SMC 2000 controller were also provided.
The CXL memory controller also incorporates DRAM die failure handling, and Microchip also provides diagnostics and debug tools to analyze failed modules. The memory controller also supports ECC, which forms part of the enterprise... Storage
Lorem Ipsum is simply dummy text of the printing and typesetting industry. Lorem Ipsum has been the industry's.
Kioxia Details BiCS 8 NAND at FMS 2024: 218 Layers With Superior Scaling
Kioxia's booth at FMS 2024 was a busy one with multiple technology demonstrations keeping visitors occupied. A walk-through of the BiCS 8 manufacturing process was the first to grab my attention. Kioxia and Western Digital announced the sampling of BiCS 8 in March 2023. We had touched briefly upon its CMOS Bonded Array (CBA) scheme in our coverage of Kioxial's 2Tb QLC NAND device and coverage of Western Digital's 128 TB QLC enterprise SSD proof-of-concept demonstration. At Kioxia's booth, we got more insights.
Traditionally, fabrication of flash chips involved placement of the associate logic circuitry (CMOS process) around the periphery of the flash array. The process then moved on to putting the CMOS under the cell array, but the wafer development process was serialized with the CMOS logic getting fabricated first followed by the cell array on top. However, this has some challenges because the cell array requires a high-temperature processing step to ensure higher reliability that can be detrimental to the health of the CMOS logic. Thanks to recent advancements in wafer bonding techniques, the new CBA process allows the CMOS wafer and cell array wafer to be processed independently in parallel and then pieced together, as shown in the models above.
The BiCS 8 3D NAND incorporates 218 layers, compared to 112 layers in BiCS 5 and 162 layers in BiCS 6. The company decided to skip over BiCS 7 (or, rather, it was probably a short-lived generation meant as an internal test vehicle). The generation retains the four-plane charge trap structure of BiCS 6. In its TLC avatar, it is available as a 1 Tbit device. The QLC version is available in two capacities - 1 Tbit and 2 Tbit.
Kioxia also noted that while the number of layers (218) doesn't compare favorably with the latest layer counts from the competition, its lateral scaling / cell shrinkage has enabled it to be competitive in terms of bit density as well as operating speeds (3200 MT/s). For reference, the latest shipping NAND from Micron - the G9 - has 276 layers with a bit density in TLC mode of 21 Gbit/mm2, and operates at up to 3600 MT/s. However, its 232L NAND operates only up to 2400 MT/s and has a bit density of 14.6 Gbit/mm2.
It must be noted that the CBA hybrid bonding process has advantages over the current processes used by other vendors - including Micron's CMOS under array (CuA) and SK hynix's 4D PUC (periphery-under-chip) developed in the late 2010s. It is expected that other NAND vendors will also move eventually to some variant of the hybrid bonding scheme used by Kioxia.
Storage
Kioxia Demonstrates RAID Offload Scheme for NVMe Drives
At FMS 2024, Kioxia had a proof-of-concept demonstration of their proposed a new RAID offload methodology for enterprise SSDs. The impetus for this is quite clear: as SSDs get faster in each generation, RAID arrays have a major problem of maintaining (and scaling up) performance. Even in cases where the RAID operations are handled by a dedicated RAID card, a simple write request in, say, a RAID 5 array would involve two reads and two writes to different drives. In cases where there is no hardware acceleration, the data from the reads needs to travel all the way back to the CPU and main memory for further processing before the writes can be done.
Kioxia has proposed the use of the PCIe direct memory access feature along with the SSD controller's controller memory buffer (CMB) to avoid the movement of data up to the CPU and back. The required parity computation is done by an accelerator block resident within the SSD controller.
In Kioxia's PoC implementation, the DMA engine can access the entire host address space (including the peer SSD's BAR-mapped CMB), allowing it to receive and transfer data as required from neighboring SSDs on the bus. Kioxia noted that their offload PoC saw close to 50% reduction in CPU utilization and upwards of 90% reduction in system DRAM utilization compared to software RAID done on the CPU. The proposed offload scheme can also handle scrubbing operations without taking up the host CPU cycles for the parity computation task.
Kioxia has already taken steps to contribute these features to the NVM Express working group. If accepted, the proposed offload scheme will be part of a standard that could become widely available across multiple SSD vendors.
Storage
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