TSMC's Roadmap at a Glance: N3X, N2P, A16 Coming in 2025/2026 As announced last week by TSMC, later this year the company is set to start high-volume manufacturing on its N3P fabrication process, and this will be the company's most advanced node for a while. Next year things will get a bit more interesting as TSMC will have two process technologies that could actually compete against each other when they enter high-volume manufacturing (HVM) in the second half of 2025. Advertised PPA Improvements of New Process Technologies Data announced during conference calls, events, press briefings and press releases Compiled by AnandTech TSMC N3 vs N5 N3E vs N5 N3P vs N3E N3X vs N3P N2 vs N3E N2P vs N3E N2P vs N2 A16 vs N2P Power -25% -30% -34% -5% -10% -7%*** -25% -30% -30% -40% -5% -10% -15% -20% Performance +10% +15% +18% +5% +5% Fmax @1.2V** +10% +15% +15% +20% +5 +10% +8% +10% Density* ? 1.3x 1.04x 1.10x*** 1.15x 1.15x ? 1.07x 1.10x HVM Q4 2022 Q4 2023 H2 2024 H2 2025 H2 2025 H2 2026 H2 2026 H2 2026 *Chip density published by TSMC reflects 'mixed' chip density consisting of 50% logic, 30% SRAM, and 20% analog. **At the same area. ***At the same speed. The production nodes are N3X (3nm-class, extreme performance-focused) as well as N2 (2nm-class). TSMC says that when compared to N3P, chips made on N3X can either lower power consumption by 7% at the same frequency by lowering Vdd from 1.0V to 0.9V, increase performance by 5% at the same area, or increase transistor density by around 10% at the same frequency. Meanwhile, the key advantage of N3X compared to predecessors is its maximum voltage of 1.2V, which is important for ultra-high-performance applications, such as desktop or datacenter GPUs. TSMC's N2 will be TSMC's first production node to use gate-all-around (GAA) nanosheet transistors and this will significantly enhance its performance, power, and are... Semiconductors