Samsung Foundry Update: 2nm Unveil in June, Second-Gen SF3 3nm Hits Production This Year
As part of Samsung's Q1 earnings announcement, the company has outlined some of its foundry unit's key plans for the rest of the year. The company has confirmed that it remains on track to meeting its goal of starting mass production of chips on its SF3 (3 nm-class, 2nd Generation) technology in the second half of the year. Meanwhile in June, Samsung Foundry will formally unveil its SF2 (2 nm-class) process technology, which will offer a mix of performance and efficiency enhancements. Finally, the company the company is preparing a variation of its 4 nm-class technology for integration into stacked 3D designs.
SF2 To Be Unveiled In June
Samsung plans to disclose key details about its SF2 fabrication technology at the VLSI Symposium 2024 on June 19. This will be the company's second major process node based upon gate-all-around (GAA) multi-bridge channel field-effect transistors (MBCFET). Improving over its predecessor, SF2 will feature a 'unique epitaxial and integration process,' which will give the process node higher performance and lower leakage than traditional FinFET-based nodes (though Samsung isn't disclosing the specific node they're comparing it to).
Samsung says that SF2 increases performance of narrow transistors by 29% for N-type and 46% for P-type, and wide transistors by 11% and 23% respectively. Moreover, it reduces transistor global variation by 26% compared to FinFET technology, and cuts product leakage by approximately 50%. This process also sets the stage for future advancements in technology through enhanced design technology co-optimization (DTCO) collaboration with its customers.
One thing that Samsung has not mentioned in context of SF2 is backside power delivery, so at least for the moment, there is no indication that Samsung will be adopting this next-gen power routing feature for SF2.
Samsung says that the design infrastructure for SF2 – the PDK, EDA tools, and licensed IP – will be finalized in the second quarter of 2024. Once this happens, Samsung's chip development partners will be able to begin designing products for this production node. Meanwhile, Samsung is already working with Arm to co-optimize Arm's Cortex cores for the SF2 process.
SF3: On Track for 2H 2024
As the first fab to introduce a GAAFET-based node, Samsung has been on the cutting edge of chip construction. At the same time, however, that has also meant that they're the first fab to encounter and solve the inevitable teething issues that come with such a major transistor design change. Consequently, while Samsung's first-generation SF3E process technology has been in production for a little less than two years now, the only publicly-disclosed chips made on the process so far have been relatively small cryptocurrency mining chips – exactly the kind of pipecleaner parts that do well on a new process node.
But with that experience in hand, Samsung is preparing to move on to making bigger and better chips with GAAFETs. As part of their earnings announcements, the company has confirmed that their updated SF3 node, which was introduced last year, remains on schedule to enter production in the second half of 2024.
A more mature product from the get-go, SF3 is being prepared to be used for building larger processors, including datacenter products. Compared to its direct predecessor, SF4, SF3 promises a 22% performance boost at the same power and transistor count, or a 34% lower power at the same frequency and complexity, as well as a 21% logic area reduction. In general, Samsung pins a lot of hopes on this technology, as it's this generation of their 3nm-class technology that is poised to compete against TSMC's N3B and N3E nodes.
SF4: Ready for 3D Stacking
Finally, Samsung is also preparing a variant of their final FinFET technology node, SF4, for use in 3D chiplet stacking. As transistor density improvements have continued to slow, 3D chip stacking has emerged as a way to keep boosting overall chip performance, especially with modern, multi-tile processor desig... Semiconductors
Posted by The Techinical Support
![](https://twitter.com/share?url=https://compbuddey.blogspot.com/2024/05/samsung-foundry-update-2nm-unveil-in.html&text=Samsung Foundry Update: 2nm Unveil in June, Second-Gen SF3 3nm Hits Production This Year <p align="center"><a href="https://www.anandtech.com/show/21377/samsung-foundry-update-2nm-unveil-in-june-2nd-gen-3nm-hits-production-this-year"><img src="https://images.anandtech.com/doci/21377/samsung-foundry-wafer-semiconductor-678-1_575px.jpg" alt="" /></a></p><p><p>As part of Samsung's Q1 earnings announcement, the company has outlined some of its foundry unit's key plans for the rest of the year. The company has confirmed that it remains on track to meeting its goal of starting mass production of chips on its SF3 (3 nm-class, 2nd Generation) technology in the second half of the year. Meanwhile in June, Samsung Foundry will formally unveil its SF2 (2 nm-class) process technology, which will offer a mix of performance and efficiency enhancements. Finally, the company the company is preparing a variation of its 4 nm-class technology for integration into stacked 3D designs.</p>
<h3>SF2 To Be Unveiled In June</h3>
<p>Samsung plans to disclose key details about its SF2 fabrication technology at the VLSI Symposium 2024 on June 19. This will be the company's second major process node based upon gate-all-around (GAA) multi-bridge channel field-effect transistors (MBCFET). Improving over its predecessor, SF2 will feature a 'unique epitaxial and integration process,' which will give the process node higher performance and lower leakage than traditional FinFET-based nodes (though Samsung isn't disclosing the specific node they're comparing it to).</p>
<p style="text-align: center;"><a href="https://www.anandtech.com/show/21377/samsung-foundry-update-2nm-unveil-in-june-2nd-gen-3nm-hits-production-this-year"><img alt="" src="https://images.anandtech.com/doci/21377/samsung-foundry-roadmap.png" style="width: 100%;" /></a></p>
<p>Samsung says that SF2 increases performance of narrow transistors by 29% for N-type and 46% for P-type, and wide transistors by 11% and 23% respectively. Moreover, it reduces transistor global variation by 26% compared to FinFET technology, and cuts product leakage by approximately 50%. This process also sets the stage for future advancements in technology through enhanced design technology co-optimization (DTCO) collaboration with its customers.</p>
<p>One thing that Samsung has not mentioned in context of SF2 is backside power delivery, so at least for the moment, there is no indication that Samsung will be adopting this next-gen power routing feature for SF2.</p>
<p>Samsung says that the design infrastructure for SF2 – the PDK, EDA tools, and licensed IP – will be finalized in the second quarter of 2024. Once this happens, Samsung's chip development partners will be able to begin designing products for this production node. Meanwhile, Samsung is already working with Arm to co-optimize Arm's Cortex cores for the SF2 process.</p>
<h3>SF3: On Track for 2H 2024</h3>
<p>As the first fab to introduce a GAAFET-based node, Samsung has been on the cutting edge of chip construction. At the same time, however, that has also meant that they're the first fab to encounter and solve the inevitable teething issues that come with such a major transistor design change. Consequently, while Samsung's first-generation SF3E process technology has been in production for a little less than two years now, the only publicly-disclosed chips made on the process so far have been relatively small cryptocurrency mining chips – exactly the kind of pipecleaner parts that do well on a new process node.</p>
<p>But with that experience in hand, Samsung is preparing to move on to making bigger and better chips with GAAFETs. As part of their earnings announcements, the company has confirmed that their updated SF3 node, which was introduced last year, remains on schedule to enter production in the second half of 2024.</p>
<p align="center"><a href="https://www.anandtech.com/show/21377/samsung-foundry-update-2nm-unveil-in-june-2nd-gen-3nm-hits-production-this-year"><img alt="" src="https://images.anandtech.com/doci/21377/Samsung_Q1_Foundry.png" style="width: 100%;" /></a></p>
<p>A more mature product from the get-go, SF3 is being prepared to be used for building larger processors, including datacenter products. Compared to its direct predecessor, SF4, SF3 promises a 22% performance boost at the same power and transistor count, or a 34% lower power at the same frequency and complexity, as well as a 21% logic area reduction. In general, Samsung pins a lot of hopes on this technology, as it's this generation of their 3nm-class technology that is poised to compete against TSMC's N3B and N3E nodes.</p>
<h3>SF4: Ready for 3D Stacking</h3>
<p>Finally, Samsung is also preparing a variant of their final FinFET technology node, SF4, for use in 3D chiplet stacking. As transistor density improvements have continued to slow, 3D chip stacking has emerged as a way to keep boosting overall chip performance, especially with modern, multi-tile processor desig... Semiconductors){kind=link}
![](https://www.pinterest.com/pin/create/button/?url=https://compbuddey.blogspot.com/2024/05/samsung-foundry-update-2nm-unveil-in.html&media=https://lh3.googleusercontent.com/blogger_img_proxy/AEn0k_uPDrBvm_HfPF7_GOQSYgPC91aBY51VUlCI7lU2SgtTuekzy1YBXIBMxOjW7XTq5uPtSOflpdGuIprKO7bM1cdAOR5qJ5tfYICHva3Yi7s5l7NtkvYozWhu_m4R8Z3_wwtYtYUCNc5ChJJSP6UgxrNJkjZllfIgH4fX5TFhNqc&description=Samsung Foundry Update: 2nm Unveil in June, Second-Gen SF3 3nm Hits Production This Year <p align="center"><a href="https://www.anandtech.com/show/21377/samsung-foundry-update-2nm-unveil-in-june-2nd-gen-3nm-hits-production-this-year"><img src="https://images.anandtech.com/doci/21377/samsung-foundry-wafer-semiconductor-678-1_575px.jpg" alt="" /></a></p><p><p>As part of Samsung's Q1 earnings announcement, the company has outlined some of its foundry unit's key plans for the rest of the year. The company has confirmed that it remains on track to meeting its goal of starting mass production of chips on its SF3 (3 nm-class, 2nd Generation) technology in the second half of the year. Meanwhile in June, Samsung Foundry will formally unveil its SF2 (2 nm-class) process technology, which will offer a mix of performance and efficiency enhancements. Finally, the company the company is preparing a variation of its 4 nm-class technology for integration into stacked 3D designs.</p>
<h3>SF2 To Be Unveiled In June</h3>
<p>Samsung plans to disclose key details about its SF2 fabrication technology at the VLSI Symposium 2024 on June 19. This will be the company's second major process node based upon gate-all-around (GAA) multi-bridge channel field-effect transistors (MBCFET). Improving over its predecessor, SF2 will feature a 'unique epitaxial and integration process,' which will give the process node higher performance and lower leakage than traditional FinFET-based nodes (though Samsung isn't disclosing the specific node they're comparing it to).</p>
<p style="text-align: center;"><a href="https://www.anandtech.com/show/21377/samsung-foundry-update-2nm-unveil-in-june-2nd-gen-3nm-hits-production-this-year"><img alt="" src="https://images.anandtech.com/doci/21377/samsung-foundry-roadmap.png" style="width: 100%;" /></a></p>
<p>Samsung says that SF2 increases performance of narrow transistors by 29% for N-type and 46% for P-type, and wide transistors by 11% and 23% respectively. Moreover, it reduces transistor global variation by 26% compared to FinFET technology, and cuts product leakage by approximately 50%. This process also sets the stage for future advancements in technology through enhanced design technology co-optimization (DTCO) collaboration with its customers.</p>
<p>One thing that Samsung has not mentioned in context of SF2 is backside power delivery, so at least for the moment, there is no indication that Samsung will be adopting this next-gen power routing feature for SF2.</p>
<p>Samsung says that the design infrastructure for SF2 – the PDK, EDA tools, and licensed IP – will be finalized in the second quarter of 2024. Once this happens, Samsung's chip development partners will be able to begin designing products for this production node. Meanwhile, Samsung is already working with Arm to co-optimize Arm's Cortex cores for the SF2 process.</p>
<h3>SF3: On Track for 2H 2024</h3>
<p>As the first fab to introduce a GAAFET-based node, Samsung has been on the cutting edge of chip construction. At the same time, however, that has also meant that they're the first fab to encounter and solve the inevitable teething issues that come with such a major transistor design change. Consequently, while Samsung's first-generation SF3E process technology has been in production for a little less than two years now, the only publicly-disclosed chips made on the process so far have been relatively small cryptocurrency mining chips – exactly the kind of pipecleaner parts that do well on a new process node.</p>
<p>But with that experience in hand, Samsung is preparing to move on to making bigger and better chips with GAAFETs. As part of their earnings announcements, the company has confirmed that their updated SF3 node, which was introduced last year, remains on schedule to enter production in the second half of 2024.</p>
<p align="center"><a href="https://www.anandtech.com/show/21377/samsung-foundry-update-2nm-unveil-in-june-2nd-gen-3nm-hits-production-this-year"><img alt="" src="https://images.anandtech.com/doci/21377/Samsung_Q1_Foundry.png" style="width: 100%;" /></a></p>
<p>A more mature product from the get-go, SF3 is being prepared to be used for building larger processors, including datacenter products. Compared to its direct predecessor, SF4, SF3 promises a 22% performance boost at the same power and transistor count, or a 34% lower power at the same frequency and complexity, as well as a 21% logic area reduction. In general, Samsung pins a lot of hopes on this technology, as it's this generation of their 3nm-class technology that is poised to compete against TSMC's N3B and N3E nodes.</p>
<h3>SF4: Ready for 3D Stacking</h3>
<p>Finally, Samsung is also preparing a variant of their final FinFET technology node, SF4, for use in 3D chiplet stacking. As transistor density improvements have continued to slow, 3D chip stacking has emerged as a way to keep boosting overall chip performance, especially with modern, multi-tile processor desig... Semiconductors){kind=link}
![](https://web.whatsapp.com/send?text=Samsung Foundry Update: 2nm Unveil in June, Second-Gen SF3 3nm Hits Production This Year <p align="center"><a href="https://www.anandtech.com/show/21377/samsung-foundry-update-2nm-unveil-in-june-2nd-gen-3nm-hits-production-this-year"><img src="https://images.anandtech.com/doci/21377/samsung-foundry-wafer-semiconductor-678-1_575px.jpg" alt="" /></a></p><p><p>As part of Samsung's Q1 earnings announcement, the company has outlined some of its foundry unit's key plans for the rest of the year. The company has confirmed that it remains on track to meeting its goal of starting mass production of chips on its SF3 (3 nm-class, 2nd Generation) technology in the second half of the year. Meanwhile in June, Samsung Foundry will formally unveil its SF2 (2 nm-class) process technology, which will offer a mix of performance and efficiency enhancements. Finally, the company the company is preparing a variation of its 4 nm-class technology for integration into stacked 3D designs.</p>
<h3>SF2 To Be Unveiled In June</h3>
<p>Samsung plans to disclose key details about its SF2 fabrication technology at the VLSI Symposium 2024 on June 19. This will be the company's second major process node based upon gate-all-around (GAA) multi-bridge channel field-effect transistors (MBCFET). Improving over its predecessor, SF2 will feature a 'unique epitaxial and integration process,' which will give the process node higher performance and lower leakage than traditional FinFET-based nodes (though Samsung isn't disclosing the specific node they're comparing it to).</p>
<p style="text-align: center;"><a href="https://www.anandtech.com/show/21377/samsung-foundry-update-2nm-unveil-in-june-2nd-gen-3nm-hits-production-this-year"><img alt="" src="https://images.anandtech.com/doci/21377/samsung-foundry-roadmap.png" style="width: 100%;" /></a></p>
<p>Samsung says that SF2 increases performance of narrow transistors by 29% for N-type and 46% for P-type, and wide transistors by 11% and 23% respectively. Moreover, it reduces transistor global variation by 26% compared to FinFET technology, and cuts product leakage by approximately 50%. This process also sets the stage for future advancements in technology through enhanced design technology co-optimization (DTCO) collaboration with its customers.</p>
<p>One thing that Samsung has not mentioned in context of SF2 is backside power delivery, so at least for the moment, there is no indication that Samsung will be adopting this next-gen power routing feature for SF2.</p>
<p>Samsung says that the design infrastructure for SF2 – the PDK, EDA tools, and licensed IP – will be finalized in the second quarter of 2024. Once this happens, Samsung's chip development partners will be able to begin designing products for this production node. Meanwhile, Samsung is already working with Arm to co-optimize Arm's Cortex cores for the SF2 process.</p>
<h3>SF3: On Track for 2H 2024</h3>
<p>As the first fab to introduce a GAAFET-based node, Samsung has been on the cutting edge of chip construction. At the same time, however, that has also meant that they're the first fab to encounter and solve the inevitable teething issues that come with such a major transistor design change. Consequently, while Samsung's first-generation SF3E process technology has been in production for a little less than two years now, the only publicly-disclosed chips made on the process so far have been relatively small cryptocurrency mining chips – exactly the kind of pipecleaner parts that do well on a new process node.</p>
<p>But with that experience in hand, Samsung is preparing to move on to making bigger and better chips with GAAFETs. As part of their earnings announcements, the company has confirmed that their updated SF3 node, which was introduced last year, remains on schedule to enter production in the second half of 2024.</p>
<p align="center"><a href="https://www.anandtech.com/show/21377/samsung-foundry-update-2nm-unveil-in-june-2nd-gen-3nm-hits-production-this-year"><img alt="" src="https://images.anandtech.com/doci/21377/Samsung_Q1_Foundry.png" style="width: 100%;" /></a></p>
<p>A more mature product from the get-go, SF3 is being prepared to be used for building larger processors, including datacenter products. Compared to its direct predecessor, SF4, SF3 promises a 22% performance boost at the same power and transistor count, or a 34% lower power at the same frequency and complexity, as well as a 21% logic area reduction. In general, Samsung pins a lot of hopes on this technology, as it's this generation of their 3nm-class technology that is poised to compete against TSMC's N3B and N3E nodes.</p>
<h3>SF4: Ready for 3D Stacking</h3>
<p>Finally, Samsung is also preparing a variant of their final FinFET technology node, SF4, for use in 3D chiplet stacking. As transistor density improvements have continued to slow, 3D chip stacking has emerged as a way to keep boosting overall chip performance, especially with modern, multi-tile processor desig... Semiconductors | https://compbuddey.blogspot.com/2024/05/samsung-foundry-update-2nm-unveil-in.html){kind=link}
![](mailto:?subject=Samsung Foundry Update: 2nm Unveil in June, Second-Gen SF3 3nm Hits Production This Year <p align="center"><a href="https://www.anandtech.com/show/21377/samsung-foundry-update-2nm-unveil-in-june-2nd-gen-3nm-hits-production-this-year"><img src="https://images.anandtech.com/doci/21377/samsung-foundry-wafer-semiconductor-678-1_575px.jpg" alt="" /></a></p><p><p>As part of Samsung's Q1 earnings announcement, the company has outlined some of its foundry unit's key plans for the rest of the year. The company has confirmed that it remains on track to meeting its goal of starting mass production of chips on its SF3 (3 nm-class, 2nd Generation) technology in the second half of the year. Meanwhile in June, Samsung Foundry will formally unveil its SF2 (2 nm-class) process technology, which will offer a mix of performance and efficiency enhancements. Finally, the company the company is preparing a variation of its 4 nm-class technology for integration into stacked 3D designs.</p>
<h3>SF2 To Be Unveiled In June</h3>
<p>Samsung plans to disclose key details about its SF2 fabrication technology at the VLSI Symposium 2024 on June 19. This will be the company's second major process node based upon gate-all-around (GAA) multi-bridge channel field-effect transistors (MBCFET). Improving over its predecessor, SF2 will feature a 'unique epitaxial and integration process,' which will give the process node higher performance and lower leakage than traditional FinFET-based nodes (though Samsung isn't disclosing the specific node they're comparing it to).</p>
<p style="text-align: center;"><a href="https://www.anandtech.com/show/21377/samsung-foundry-update-2nm-unveil-in-june-2nd-gen-3nm-hits-production-this-year"><img alt="" src="https://images.anandtech.com/doci/21377/samsung-foundry-roadmap.png" style="width: 100%;" /></a></p>
<p>Samsung says that SF2 increases performance of narrow transistors by 29% for N-type and 46% for P-type, and wide transistors by 11% and 23% respectively. Moreover, it reduces transistor global variation by 26% compared to FinFET technology, and cuts product leakage by approximately 50%. This process also sets the stage for future advancements in technology through enhanced design technology co-optimization (DTCO) collaboration with its customers.</p>
<p>One thing that Samsung has not mentioned in context of SF2 is backside power delivery, so at least for the moment, there is no indication that Samsung will be adopting this next-gen power routing feature for SF2.</p>
<p>Samsung says that the design infrastructure for SF2 – the PDK, EDA tools, and licensed IP – will be finalized in the second quarter of 2024. Once this happens, Samsung's chip development partners will be able to begin designing products for this production node. Meanwhile, Samsung is already working with Arm to co-optimize Arm's Cortex cores for the SF2 process.</p>
<h3>SF3: On Track for 2H 2024</h3>
<p>As the first fab to introduce a GAAFET-based node, Samsung has been on the cutting edge of chip construction. At the same time, however, that has also meant that they're the first fab to encounter and solve the inevitable teething issues that come with such a major transistor design change. Consequently, while Samsung's first-generation SF3E process technology has been in production for a little less than two years now, the only publicly-disclosed chips made on the process so far have been relatively small cryptocurrency mining chips – exactly the kind of pipecleaner parts that do well on a new process node.</p>
<p>But with that experience in hand, Samsung is preparing to move on to making bigger and better chips with GAAFETs. As part of their earnings announcements, the company has confirmed that their updated SF3 node, which was introduced last year, remains on schedule to enter production in the second half of 2024.</p>
<p align="center"><a href="https://www.anandtech.com/show/21377/samsung-foundry-update-2nm-unveil-in-june-2nd-gen-3nm-hits-production-this-year"><img alt="" src="https://images.anandtech.com/doci/21377/Samsung_Q1_Foundry.png" style="width: 100%;" /></a></p>
<p>A more mature product from the get-go, SF3 is being prepared to be used for building larger processors, including datacenter products. Compared to its direct predecessor, SF4, SF3 promises a 22% performance boost at the same power and transistor count, or a 34% lower power at the same frequency and complexity, as well as a 21% logic area reduction. In general, Samsung pins a lot of hopes on this technology, as it's this generation of their 3nm-class technology that is poised to compete against TSMC's N3B and N3E nodes.</p>
<h3>SF4: Ready for 3D Stacking</h3>
<p>Finally, Samsung is also preparing a variant of their final FinFET technology node, SF4, for use in 3D chiplet stacking. As transistor density improvements have continued to slow, 3D chip stacking has emerged as a way to keep boosting overall chip performance, especially with modern, multi-tile processor desig... Semiconductors&body=https://compbuddey.blogspot.com/2024/05/samsung-foundry-update-2nm-unveil-in.html){kind=link}
Silicon Motion Demonstrates Flexible Data Placement on MonTitan Gen 5 Enterprise SSD Platform 
At FMS 2024, the technological requirements from the storage and memory subsystem took center stage. Both SSD and controller vendors had various demonstrations touting their suitability for different stages of the AI data pipeline - ingestion, preparation, training, checkpointing, and inference. Vendors like Solidigm have different types of SSDs optimized for different stages of the pipeline. At the same time, controller vendors have taken advantage of one of the features introduced recently in the NVM Express standard - Flexible Data Placement (FDP).
FDP involves the host providing information / hints about the areas where the controller could place the incoming write data in order to reduce the write amplification. These hints are generated based on specific block sizes advertised by the device. The feature is completely backwards-compatible, with non-FDP hosts working just as before with FDP-enabled SSDs, and vice-versa.
Silicon Motion's MonTitan Gen 5 Enterprise SSD Platform was announced back in 2022. Since then, Silicon Motion has been touting the flexibility of the platform, allowing its customers to incorporate their own features as part of the customization process. This approach is common in the enterprise space, as we have seen with Marvell's Bravera SC5 SSD controller in the DapuStor SSDs and Microchip's Flashtec controllers in the Longsys FORESEE enterprise SSDs.
At FMS 2024, the company was demonstrating the advantages of flexible data placement by allowing a single QLC SSD based on their MonTitan platform to take part in different stages of the AI data pipeline while maintaining the required quality of service (minimum bandwidth) for each process. The company even has a trademarked name (PerformaShape) for the firmware feature in the controller that allows the isolation of different concurrent SSD accesses (from different stages in the AI data pipeline) to guarantee this QoS. Silicon Motion claims that this scheme will enable its customers to get the maximum write performance possible from QLC SSDs without negatively impacting the performance of other types of accesses.
Silicon Motion and Phison have market leadership in the client SSD controller market with similar approaches. However, their enterprise SSD controller marketing couldn't be more different. While Phison has gone in for a turnkey solution with their Gen 5 SSD platform (to the extent of not adopting the white label route for this generation, and instead opting to get the SSDs qualified with different cloud service providers themselves), Silicon Motion is opting for a different approach. The flexibility and customization possibilities can make platforms like the MonTitan appeal to flash array vendors.
Storage
Kioxia Demonstrates Optical Interface SSDs for Data Centers 
A few years back, the Japanese government's New Energy and Industrial Technology Development Organization (NEDO ) allocated funding for the development of green datacenter technologies. With the aim to obtain up to 40% savings in overall power consumption, several Japanese companies have been developing an optical interface for their enterprise SSDs. And at this year's FMS, Kioxia had their optical interface on display.
For this demonstration, Kioxia took its existing CM7 enterprise SSD and created an optical interface for it. A PCIe card with on-board optics developed by Kyocera is installed in the server slot. An optical interface allows data transfer over long distances (it was 40m in the demo, but Kioxia promises lengths of up to 100m for the cable in the future). This allows the storage to be kept in a separate room with minimal cooling requirements compared to the rack with the CPUs and GPUs. Disaggregation of different server components will become an option as very high throughput interfaces such as PCIe 7.0 (with 128 GT/s rates) become available.
The demonstration of the optical SSD showed a slight loss in IOPS performance, but a significant advantage in the latency metric over the shipping enterprise SSD behind a copper network link. Obviously, there are advantages in wiring requirements and signal integrity maintenance with optical links.
Being a proof-of-concept demonstration, we do see the requirement for an industry-standard approach if this were to gain adoption among different datacenter vendors. The PCI-SIG optical workgroup will need to get its act together soon to create a standards-based approach to this problem.
Storage
Silicon Motion Demonstrates Flexible Data Placement on MonTitan Gen 5 Enterprise SSD Platform
At FMS 2024, the technological requirements from the storage and memory subsystem took center stage. Both SSD and controller vendors had various demonstrations touting their suitability for different stages of the AI data pipeline - ingestion, preparation, training, checkpointing, and inference. Vendors like Solidigm have different types of SSDs optimized for different stages of the pipeline. At the same time, controller vendors have taken advantage of one of the features introduced recently in the NVM Express standard - Flexible Data Placement (FDP).
FDP involves the host providing information / hints about the areas where the controller could place the incoming write data in order to reduce the write amplification. These hints are generated based on specific block sizes advertised by the device. The feature is completely backwards-compatible, with non-FDP hosts working just as before with FDP-enabled SSDs, and vice-versa.
Silicon Motion's MonTitan Gen 5 Enterprise SSD Platform was announced back in 2022. Since then, Silicon Motion has been touting the flexibility of the platform, allowing its customers to incorporate their own features as part of the customization process. This approach is common in the enterprise space, as we have seen with Marvell's Bravera SC5 SSD controller in the DapuStor SSDs and Microchip's Flashtec controllers in the Longsys FORESEE enterprise SSDs.
At FMS 2024, the company was demonstrating the advantages of flexible data placement by allowing a single QLC SSD based on their MonTitan platform to take part in different stages of the AI data pipeline while maintaining the required quality of service (minimum bandwidth) for each process. The company even has a trademarked name (PerformaShape) for the firmware feature in the controller that allows the isolation of different concurrent SSD accesses (from different stages in the AI data pipeline) to guarantee this QoS. Silicon Motion claims that this scheme will enable its customers to get the maximum write performance possible from QLC SSDs without negatively impacting the performance of other types of accesses.
Silicon Motion and Phison have market leadership in the client SSD controller market with similar approaches. However, their enterprise SSD controller marketing couldn't be more different. While Phison has gone in for a turnkey solution with their Gen 5 SSD platform (to the extent of not adopting the white label route for this generation, and instead opting to get the SSDs qualified with different cloud service providers themselves), Silicon Motion is opting for a different approach. The flexibility and customization possibilities can make platforms like the MonTitan appeal to flash array vendors.
Storage
Kioxia Demonstrates Optical Interface SSDs for Data Centers
A few years back, the Japanese government's New Energy and Industrial Technology Development Organization (NEDO ) allocated funding for the development of green datacenter technologies. With the aim to obtain up to 40% savings in overall power consumption, several Japanese companies have been developing an optical interface for their enterprise SSDs. And at this year's FMS, Kioxia had their optical interface on display.
For this demonstration, Kioxia took its existing CM7 enterprise SSD and created an optical interface for it. A PCIe card with on-board optics developed by Kyocera is installed in the server slot. An optical interface allows data transfer over long distances (it was 40m in the demo, but Kioxia promises lengths of up to 100m for the cable in the future). This allows the storage to be kept in a separate room with minimal cooling requirements compared to the rack with the CPUs and GPUs. Disaggregation of different server components will become an option as very high throughput interfaces such as PCIe 7.0 (with 128 GT/s rates) become available.
The demonstration of the optical SSD showed a slight loss in IOPS performance, but a significant advantage in the latency metric over the shipping enterprise SSD behind a copper network link. Obviously, there are advantages in wiring requirements and signal integrity maintenance with optical links.
Being a proof-of-concept demonstration, we do see the requirement for an industry-standard approach if this were to gain adoption among different datacenter vendors. The PCI-SIG optical workgroup will need to get its act together soon to create a standards-based approach to this problem.
Storage
Fadu's FC5161 SSD Controller Breaks Cover in Western Digital's PCIe Gen5 Enterprise Drives 
When Western Digital introduced its Ultrastar DC SN861 SSDs earlier this year, the company did not disclose which controller it used for these drives, which made many observers presume that WD was using an in-house controller. But a recent teardown of the drive shows that is not the case; instead, the company is using a controller from Fadu, a South Korean company founded in 2015 that specializes on enterprise-grade turnkey SSD solutions.
The Western Digital Ultrastar DC SN861 SSD is aimed at performance-hungry hyperscale datacenters and enterprise customers which are adopting PCIe Gen5 storage devices these days. And, as uncovered in photos from a recent Storage Review article, the drive is based on Fadu's FC5161 NVMe 2.0-compliant controller. The FC5161 utilizes 16 NAND channels supporting an ONFi 5.0 2400 MT/s interface, and features a combination of enterprise-grade capabilities (OCP Cloud Spec 2.0, SR-IOV, up to 512 name spaces for ZNS support, flexible data placement, NVMe-MI 1.2, advanced security, telemetry, power loss protection) not available on other off-the-shelf controllers – or on any previous Western Digital controllers.
The Ultrastar DC SN861 SSD offers sequential read speeds up to 13.7 GB/s as well as sequential write speeds up to 7.5 GB/s. As for random performance, it boasts with an up to 3.3 million random 4K read IOPS and up to 0.8 million random 4K write IOPS. The drives are available in capacities between 1.6 TB and 7.68 TB with one or three drive writes per day (DWPD) over five years rating as well as in U.2 and E1.S form-factors.
While the two form factors of the SN861 share a similar technical design, Western Digital has tailored each version for distinct workloads: the E1.S supports FDP and performance enhancements specifically for cloud environments. By contrast, the U.2 model is geared towards high-performance enterprise tasks and emerging applications like AI.
Without any doubts, Western Digital's Ultrastar DC SN861 is a feature-rich high-performance enterprise-grade SSD. It has another distinctive feature: a 5W idle power consumption, which is rather low by the standards of enterprise-grade drives (e.g., it is 1W lower compared to the SN840). While the difference with predecessors may be just 1W, hyperscalers deploy thousands of drives and for their TCO every watt counts.
Western Digital's Ultrastar DC SN861 SSDs are now available for purchase to select customers (such as Meta) and to interested parties. Prices are unknown, but they will depend on such factors as volumes.
Sources: Fadu, Storage Review
Storage
Kioxia Demonstrates Optical Interface SSDs for Data Centers
A few years back, the Japanese government's New Energy and Industrial Technology Development Organization (NEDO ) allocated funding for the development of green datacenter technologies. With the aim to obtain up to 40% savings in overall power consumption, several Japanese companies have been developing an optical interface for their enterprise SSDs. And at this year's FMS, Kioxia had their optical interface on display.
For this demonstration, Kioxia took its existing CM7 enterprise SSD and created an optical interface for it. A PCIe card with on-board optics developed by Kyocera is installed in the server slot. An optical interface allows data transfer over long distances (it was 40m in the demo, but Kioxia promises lengths of up to 100m for the cable in the future). This allows the storage to be kept in a separate room with minimal cooling requirements compared to the rack with the CPUs and GPUs. Disaggregation of different server components will become an option as very high throughput interfaces such as PCIe 7.0 (with 128 GT/s rates) become available.
The demonstration of the optical SSD showed a slight loss in IOPS performance, but a significant advantage in the latency metric over the shipping enterprise SSD behind a copper network link. Obviously, there are advantages in wiring requirements and signal integrity maintenance with optical links.
Being a proof-of-concept demonstration, we do see the requirement for an industry-standard approach if this were to gain adoption among different datacenter vendors. The PCI-SIG optical workgroup will need to get its act together soon to create a standards-based approach to this problem.
Storage
Kioxia Demonstrates Optical Interface SSDs for Data Centers
A few years back, the Japanese government's New Energy and Industrial Technology Development Organization (NEDO ) allocated funding for the development of green datacenter technologies. With the aim to obtain up to 40% savings in overall power consumption, several Japanese companies have been developing an optical interface for their enterprise SSDs. And at this year's FMS, Kioxia had their optical interface on display.
For this demonstration, Kioxia took its existing CM7 enterprise SSD and created an optical interface for it. A PCIe card with on-board optics developed by Kyocera is installed in the server slot. An optical interface allows data transfer over long distances (it was 40m in the demo, but Kioxia promises lengths of up to 100m for the cable in the future). This allows the storage to be kept in a separate room with minimal cooling requirements compared to the rack with the CPUs and GPUs. Disaggregation of different server components will become an option as very high throughput interfaces such as PCIe 7.0 (with 128 GT/s rates) become available.
The demonstration of the optical SSD showed a slight loss in IOPS performance, but a significant advantage in the latency metric over the shipping enterprise SSD behind a copper network link. Obviously, there are advantages in wiring requirements and signal integrity maintenance with optical links.
Being a proof-of-concept demonstration, we do see the requirement for an industry-standard approach if this were to gain adoption among different datacenter vendors. The PCI-SIG optical workgroup will need to get its act together soon to create a standards-based approach to this problem.
Storage
Intel Sells Its Arm Shares, Reduces Stakes in Other Companies 
Intel has divested its entire stake in Arm Holdings during the second quarter, raising approximately $147 million. Alongside this, Intel sold its stake in cybersecurity firm ZeroFox and reduced its holdings in Astera Labs, all as part of a broader effort to manage costs and recover cash amid significant financial challenges.
The sale of Intel's 1.18 million shares in Arm Holdings, as reported in a recent SEC filing, comes at a time when the company is struggling with substantial financial losses. Despite the $147 million generated from the sale, Intel reported a $120 million net loss on its equity investments for the quarter, which is a part of a larger $1.6 billion loss that Intel faced during this period.
In addition to selling its stake in Arm, Intel also exited its investment in ZeroFox and reduced its involvement with Astera Labs, a company known for developing connectivity platforms for enterprise hardware. These moves are in line with Intel's strategy to reduce costs and stabilize its financial position as it faces ongoing market challenges.
Despite the divestment, Intel's past investment in Arm was likely driven by strategic considerations. Arm Holdings is a significant force in the semiconductor industry, with its designs powering most mobile devices, and, for obvious reasons, Intel would like to address these. Intel and Arm are also collaborating on datacenter platforms tailored for Intel's 18A process technology. Additionally, Arm might view Intel as a potential licensee for its technologies and a valuable partner for other companies that license Arm's designs.
Intel's investment in Astera Labs was also a strategic one as the company probably wanted to secure steady supply of smart retimers, smart cable modems, and CXL memory controller, which are used in volumes in datacenters and Intel is certainly interested in selling as many datacenter CPUs as possible.
Intel's financial struggles were highlighted earlier this month when the company released a disappointing earnings report, which led to a 33% drop in its stock value, erasing billions of dollars of capitalization. To counter these difficulties, Intel announced plans to cut 15,000 jobs and implement other expense reductions. The company has also suspended its dividend, signaling the depth of its efforts to conserve cash and focus on recovery. When it comes to divestment of Arm stock, the need for immediate financial stabilization has presumably taken precedence, leading to the decision.
CPUs
Intel Sells Its Arm Shares, Reduces Stakes in Other Companies
Intel has divested its entire stake in Arm Holdings during the second quarter, raising approximately $147 million. Alongside this, Intel sold its stake in cybersecurity firm ZeroFox and reduced its holdings in Astera Labs, all as part of a broader effort to manage costs and recover cash amid significant financial challenges.
The sale of Intel's 1.18 million shares in Arm Holdings, as reported in a recent SEC filing, comes at a time when the company is struggling with substantial financial losses. Despite the $147 million generated from the sale, Intel reported a $120 million net loss on its equity investments for the quarter, which is a part of a larger $1.6 billion loss that Intel faced during this period.
In addition to selling its stake in Arm, Intel also exited its investment in ZeroFox and reduced its involvement with Astera Labs, a company known for developing connectivity platforms for enterprise hardware. These moves are in line with Intel's strategy to reduce costs and stabilize its financial position as it faces ongoing market challenges.
Despite the divestment, Intel's past investment in Arm was likely driven by strategic considerations. Arm Holdings is a significant force in the semiconductor industry, with its designs powering most mobile devices, and, for obvious reasons, Intel would like to address these. Intel and Arm are also collaborating on datacenter platforms tailored for Intel's 18A process technology. Additionally, Arm might view Intel as a potential licensee for its technologies and a valuable partner for other companies that license Arm's designs.
Intel's investment in Astera Labs was also a strategic one as the company probably wanted to secure steady supply of smart retimers, smart cable modems, and CXL memory controller, which are used in volumes in datacenters and Intel is certainly interested in selling as many datacenter CPUs as possible.
Intel's financial struggles were highlighted earlier this month when the company released a disappointing earnings report, which led to a 33% drop in its stock value, erasing billions of dollars of capitalization. To counter these difficulties, Intel announced plans to cut 15,000 jobs and implement other expense reductions. The company has also suspended its dividend, signaling the depth of its efforts to conserve cash and focus on recovery. When it comes to divestment of Arm stock, the need for immediate financial stabilization has presumably taken precedence, leading to the decision.
CPUs
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Silicon Motion Demonstrates Flexible Data Placement on MonTitan Gen 5 Enterprise SSD Platform
At FMS 2024, the technological requirements from the storage and memory subsystem took center stage. Both SSD and controller vendors had various demonstrations touting their suitability for different stages of the AI data pipeline - ingestion, preparation, training, checkpointing, and inference. Vendors like Solidigm have different types of SSDs optimized for different stages of the pipeline. At the same time, controller vendors have taken advantage of one of the features introduced recently in the NVM Express standard - Flexible Data Placement (FDP).
FDP involves the host providing information / hints about the areas where the controller could place the incoming write data in order to reduce the write amplification. These hints are generated based on specific block sizes advertised by the device. The feature is completely backwards-compatible, with non-FDP hosts working just as before with FDP-enabled SSDs, and vice-versa.
Silicon Motion's MonTitan Gen 5 Enterprise SSD Platform was announced back in 2022. Since then, Silicon Motion has been touting the flexibility of the platform, allowing its customers to incorporate their own features as part of the customization process. This approach is common in the enterprise space, as we have seen with Marvell's Bravera SC5 SSD controller in the DapuStor SSDs and Microchip's Flashtec controllers in the Longsys FORESEE enterprise SSDs.
At FMS 2024, the company was demonstrating the advantages of flexible data placement by allowing a single QLC SSD based on their MonTitan platform to take part in different stages of the AI data pipeline while maintaining the required quality of service (minimum bandwidth) for each process. The company even has a trademarked name (PerformaShape) for the firmware feature in the controller that allows the isolation of different concurrent SSD accesses (from different stages in the AI data pipeline) to guarantee this QoS. Silicon Motion claims that this scheme will enable its customers to get the maximum write performance possible from QLC SSDs without negatively impacting the performance of other types of accesses.
Silicon Motion and Phison have market leadership in the client SSD controller market with similar approaches. However, their enterprise SSD controller marketing couldn't be more different. While Phison has gone in for a turnkey solution with their Gen 5 SSD platform (to the extent of not adopting the white label route for this generation, and instead opting to get the SSDs qualified with different cloud service providers themselves), Silicon Motion is opting for a different approach. The flexibility and customization possibilities can make platforms like the MonTitan appeal to flash array vendors.
Storage
Kioxia Demonstrates Optical Interface SSDs for Data Centers
A few years back, the Japanese government's New Energy and Industrial Technology Development Organization (NEDO ) allocated funding for the development of green datacenter technologies. With the aim to obtain up to 40% savings in overall power consumption, several Japanese companies have been developing an optical interface for their enterprise SSDs. And at this year's FMS, Kioxia had their optical interface on display.
For this demonstration, Kioxia took its existing CM7 enterprise SSD and created an optical interface for it. A PCIe card with on-board optics developed by Kyocera is installed in the server slot. An optical interface allows data transfer over long distances (it was 40m in the demo, but Kioxia promises lengths of up to 100m for the cable in the future). This allows the storage to be kept in a separate room with minimal cooling requirements compared to the rack with the CPUs and GPUs. Disaggregation of different server components will become an option as very high throughput interfaces such as PCIe 7.0 (with 128 GT/s rates) become available.
The demonstration of the optical SSD showed a slight loss in IOPS performance, but a significant advantage in the latency metric over the shipping enterprise SSD behind a copper network link. Obviously, there are advantages in wiring requirements and signal integrity maintenance with optical links.
Being a proof-of-concept demonstration, we do see the requirement for an industry-standard approach if this were to gain adoption among different datacenter vendors. The PCI-SIG optical workgroup will need to get its act together soon to create a standards-based approach to this problem.
Storage
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