TSMC to Receive $6.6B Under US CHIPS Act, Set to Build 2nm Fab in Arizona
TSMC has entered into a preliminary agreement with the U.S. Department of Commerce, securing up to $6.6 billion in direct funding and access to up to $5 billion in loans under the CHIPS and Science Act. With this latest round of support from the U.S. government, TSMC in turn will be adding a third fab to their Arizona project, with its investment in the region soaring to more than $65 billion. This move not only signifies the largest foreign direct investment in Arizona but also marks one of the biggest support packages that the U.S. government plans to make under the CHIPS Act, second only to Intel's $8.5 billion award last month.
TSMC is currently equipping its Fab 21 phase 1 and expects that it will start making chips using N4 and N5 (4 nm and 5 nm-class) process technologies in the first half of 2025. TSMC's Fab 21 phase 2 will commence operations in 2028, and will make chips on N3 and N2 (3 nm and 2 nm-class) production nodes. The newly-announced third fab (designation TBD) is set to manufacture chips on processes of 2 nm-class or beyond, with the start of production anticipated by the end of the decade.
TSMC has not announced a planned capacity for the new fab, only noting that it will be similar to the other two Arizona fabs, boasting a cleanroom space roughly twice as large as that of a typical "industry-standard logic fab." If it is sized similarly to the other Arizona fabs, then this strongly implies that the new fab will be another MegaFab-class facility – a mid-range fab producing around 25,000 wafer starts per month. TSMC does operate even larger fabs – the 100K WSPM GigaFab – though to date they've yet to build any of these outside of Taiwan.
“The CHIPS and Science Act provides TSMC the opportunity to make this unprecedented investment and to offer our foundry service of the most advanced manufacturing technologies in the United States,” said TSMC Chairman Dr. Mark Liu. “Our U.S. operations allow us to better support our U.S. customers, which include several of the world’s leading technology companies. Our U.S. operations will also expand our capability to trailblaze future advancements in semiconductor technology.”
The construction of three fabs in Arizona is poised to generate approximately 6,000 direct high-tech jobs, contributing significantly to the creation of a skilled workforce. This workforce is expected to play a crucial role in fostering a dynamic and competitive global semiconductor ecosystem. Moreover, the project is projected to create over 20,000 construction jobs, in addition to spawning tens of thousands of indirect jobs related to suppliers and consumer services.
AMD, Apple, and NVIDIA fully support TSMC's project and all of them expressed interest in using TSMC's capacities in the U.S.
“Today’s announcement highlights the strong commitment from Secretary Raimondo and the entire administration to ensure the U.S. plays a central role creating a more geographically diverse and resilient semiconductor supply chain,” said AMD Chair and CEO Lisa Su. “TSMC has a long track record of providing the leading-edge manufacturing capabilities that have enabled AMD to focus on what we do best, designing high-performance chips that change the world. We are committed to our partnership with TSMC and look forward to building our most advanced chips in U.S.”
TSMC's ventures in Arizona have encountered obstacles, such as setbacks caused by labor shortages and doubts about the U.S. governmental funding. As a result, production at the second facility has been postponed from 2026 to 2028. Moreover, Bloomberg has reported that at least one supplier for TSMC has called off its intended project in Arizona, attributing the decision to challenges in securing a workforce. The address the workforce issues, the TSMC grant includes a $50 million allocation for training of the local workforce.
Semiconductors
Posted by The Techinical Support
Kioxia Details BiCS 8 NAND at FMS 2024: 218 Layers With Superior Scaling 
Kioxia's booth at FMS 2024 was a busy one with multiple technology demonstrations keeping visitors occupied. A walk-through of the BiCS 8 manufacturing process was the first to grab my attention. Kioxia and Western Digital announced the sampling of BiCS 8 in March 2023. We had touched briefly upon its CMOS Bonded Array (CBA) scheme in our coverage of Kioxial's 2Tb QLC NAND device and coverage of Western Digital's 128 TB QLC enterprise SSD proof-of-concept demonstration. At Kioxia's booth, we got more insights.
Traditionally, fabrication of flash chips involved placement of the associate logic circuitry (CMOS process) around the periphery of the flash array. The process then moved on to putting the CMOS under the cell array, but the wafer development process was serialized with the CMOS logic getting fabricated first followed by the cell array on top. However, this has some challenges because the cell array requires a high-temperature processing step to ensure higher reliability that can be detrimental to the health of the CMOS logic. Thanks to recent advancements in wafer bonding techniques, the new CBA process allows the CMOS wafer and cell array wafer to be processed independently in parallel and then pieced together, as shown in the models above.
The BiCS 8 3D NAND incorporates 218 layers, compared to 112 layers in BiCS 5 and 162 layers in BiCS 6. The company decided to skip over BiCS 7 (or, rather, it was probably a short-lived generation meant as an internal test vehicle). The generation retains the four-plane charge trap structure of BiCS 6. In its TLC avatar, it is available as a 1 Tbit device. The QLC version is available in two capacities - 1 Tbit and 2 Tbit.
Kioxia also noted that while the number of layers (218) doesn't compare favorably with the latest layer counts from the competition, its lateral scaling / cell shrinkage has enabled it to be competitive in terms of bit density as well as operating speeds (3200 MT/s). For reference, the latest shipping NAND from Micron - the G9 - has 276 layers with a bit density in TLC mode of 21 Gbit/mm2, and operates at up to 3600 MT/s. However, its 232L NAND operates only up to 2400 MT/s and has a bit density of 14.6 Gbit/mm2.
It must be noted that the CBA hybrid bonding process has advantages over the current processes used by other vendors - including Micron's CMOS under array (CuA) and SK hynix's 4D PUC (periphery-under-chip) developed in the late 2010s. It is expected that other NAND vendors will also move eventually to some variant of the hybrid bonding scheme used by Kioxia.
Storage
In Light of Stability Concerns, Intel Issues Request to Motherboards Vendors to Actually Follow Stock Power Settings Across the internet, from online forums such as Reddit to various other tech media outlets, there's a lot of furor around reports of Intel's top-end 14th and 13th Gen K series of processors running into stability issues. As Intel's flagship chips, these parts come aggressively clocked in order to maximize performance through various implementations of boost and turbo, leaving them running close to their limits out of the box. But with high-end motherboards further goosing these chips to wring even more performance out of them, it would seem that the Intel desktop ecosystem has finally reached a tipping point where all of these efforts to boost performance have pushed these flagship chips to unstable conditions. To that end, Intel has released new gudiance to its consumer motherboard partners, strongly encouraging them to actually implment Intel's stock power settings, and to use those baseline settings as their out-of-the-box default.
While the underlying conditions are nothing new – we've published stories time and time again about motherboard features such as multi-core enhancement (MCE) and raised power consumption limits that seek to maximize how hard and how long systems are able to turbo boost – the issue has finally come to a head in the last couple of months thanks to accumulating reports of system instability with Intel's 13900K and 14900K processors. These instability problems are eventually solved by either tamping down on these motherboard performance-boosting features – bringing the chips back down to something closer to Intel's official operating parameters – or downclocking the chips entirely.
Intel first began publicly investigating the matter on the 27th of February, when Intel's Communications Manager, Thomas Hannaford, posted a thread on Intel's Community Product Support Forms titled "Regarding Reports of 13th/14th Gen Unlocked Desktop Users Experiencing Stability Issues". In this thread, Thomas Hannaford said, "Intel is aware of reports regarding Intel Core 13th and 14th Gen unlocked desktop processors experiencing issues with certain workloads. We're engaged with our partners and are conducting analysis of the reported issues. If you are experiencing these issues, please reach out to Intel Customer Support for further assistance in the interim."
Since that post went up, additional reports have been circulating about instability issues across various online forums and message boards. The underlying culprit has been theorized to be motherboards implementing an array of strategies to improve chip performance, including aggressive multi-core enhancement settings, "unlimited" PL2 turbo, and reduced load line calibration settings. At no point do any of these settings overclock a CPU and push it to a higher clockspeed than it's validated for, but these settings do everything possible to keep a chip at the highest clockspeed possible at all times – and in the process seem to have gone a step too far.
From "Why Intel Processors Draw More Power Than Expected: TDP and Turbo Explained"
We wrote a piece initially covering multi-core enhancement in 2012, detailing how motherboard manufacturers try to stay competitive with each other and leverage any headroom within the silicon to output the highest performance levels. And more recently, we've talked about how desktop systems with Intel chips are now regularly exceeding their rated TDPs – sometimes by extreme amounts – as motherboard vendors continue to push them to run as hard as possible for the best performance.
But things have changed since 2012. At the time, this wasn't so much of an issue, as overclocking was actually very favorable to increasing the performance of processors. But in 2024 with chips such as the Intel Core i9-14900K, we have CPUs shipping with a maximum turbo clock speed of 6.0 GHz and a peak power consumption of over 400 Watts, figures that were only a pipe dream a decade ago.
Jumping to the present time, over the weekend Intel released a statement about the matter to its partners, outlining their investigation so far and their sug... CPUs
From "Why Intel Processors Draw More Power Than Expected: TDP and Turbo Explained"
Kioxia Details BiCS 8 NAND at FMS 2024: 218 Layers With Superior Scaling
Kioxia's booth at FMS 2024 was a busy one with multiple technology demonstrations keeping visitors occupied. A walk-through of the BiCS 8 manufacturing process was the first to grab my attention. Kioxia and Western Digital announced the sampling of BiCS 8 in March 2023. We had touched briefly upon its CMOS Bonded Array (CBA) scheme in our coverage of Kioxial's 2Tb QLC NAND device and coverage of Western Digital's 128 TB QLC enterprise SSD proof-of-concept demonstration. At Kioxia's booth, we got more insights.
Traditionally, fabrication of flash chips involved placement of the associate logic circuitry (CMOS process) around the periphery of the flash array. The process then moved on to putting the CMOS under the cell array, but the wafer development process was serialized with the CMOS logic getting fabricated first followed by the cell array on top. However, this has some challenges because the cell array requires a high-temperature processing step to ensure higher reliability that can be detrimental to the health of the CMOS logic. Thanks to recent advancements in wafer bonding techniques, the new CBA process allows the CMOS wafer and cell array wafer to be processed independently in parallel and then pieced together, as shown in the models above.
The BiCS 8 3D NAND incorporates 218 layers, compared to 112 layers in BiCS 5 and 162 layers in BiCS 6. The company decided to skip over BiCS 7 (or, rather, it was probably a short-lived generation meant as an internal test vehicle). The generation retains the four-plane charge trap structure of BiCS 6. In its TLC avatar, it is available as a 1 Tbit device. The QLC version is available in two capacities - 1 Tbit and 2 Tbit.
Kioxia also noted that while the number of layers (218) doesn't compare favorably with the latest layer counts from the competition, its lateral scaling / cell shrinkage has enabled it to be competitive in terms of bit density as well as operating speeds (3200 MT/s). For reference, the latest shipping NAND from Micron - the G9 - has 276 layers with a bit density in TLC mode of 21 Gbit/mm2, and operates at up to 3600 MT/s. However, its 232L NAND operates only up to 2400 MT/s and has a bit density of 14.6 Gbit/mm2.
It must be noted that the CBA hybrid bonding process has advantages over the current processes used by other vendors - including Micron's CMOS under array (CuA) and SK hynix's 4D PUC (periphery-under-chip) developed in the late 2010s. It is expected that other NAND vendors will also move eventually to some variant of the hybrid bonding scheme used by Kioxia.
Storage
In Light of Stability Concerns, Intel Issues Request to Motherboards Vendors to Actually Follow Stock Power Settings Across the internet, from online forums such as Reddit to various other tech media outlets, there's a lot of furor around reports of Intel's top-end 14th and 13th Gen K series of processors running into stability issues. As Intel's flagship chips, these parts come aggressively clocked in order to maximize performance through various implementations of boost and turbo, leaving them running close to their limits out of the box. But with high-end motherboards further goosing these chips to wring even more performance out of them, it would seem that the Intel desktop ecosystem has finally reached a tipping point where all of these efforts to boost performance have pushed these flagship chips to unstable conditions. To that end, Intel has released new gudiance to its consumer motherboard partners, strongly encouraging them to actually implment Intel's stock power settings, and to use those baseline settings as their out-of-the-box default.
While the underlying conditions are nothing new – we've published stories time and time again about motherboard features such as multi-core enhancement (MCE) and raised power consumption limits that seek to maximize how hard and how long systems are able to turbo boost – the issue has finally come to a head in the last couple of months thanks to accumulating reports of system instability with Intel's 13900K and 14900K processors. These instability problems are eventually solved by either tamping down on these motherboard performance-boosting features – bringing the chips back down to something closer to Intel's official operating parameters – or downclocking the chips entirely.
Intel first began publicly investigating the matter on the 27th of February, when Intel's Communications Manager, Thomas Hannaford, posted a thread on Intel's Community Product Support Forms titled "Regarding Reports of 13th/14th Gen Unlocked Desktop Users Experiencing Stability Issues". In this thread, Thomas Hannaford said, "Intel is aware of reports regarding Intel Core 13th and 14th Gen unlocked desktop processors experiencing issues with certain workloads. We're engaged with our partners and are conducting analysis of the reported issues. If you are experiencing these issues, please reach out to Intel Customer Support for further assistance in the interim."
Since that post went up, additional reports have been circulating about instability issues across various online forums and message boards. The underlying culprit has been theorized to be motherboards implementing an array of strategies to improve chip performance, including aggressive multi-core enhancement settings, "unlimited" PL2 turbo, and reduced load line calibration settings. At no point do any of these settings overclock a CPU and push it to a higher clockspeed than it's validated for, but these settings do everything possible to keep a chip at the highest clockspeed possible at all times – and in the process seem to have gone a step too far.
From "Why Intel Processors Draw More Power Than Expected: TDP and Turbo Explained"
We wrote a piece initially covering multi-core enhancement in 2012, detailing how motherboard manufacturers try to stay competitive with each other and leverage any headroom within the silicon to output the highest performance levels. And more recently, we've talked about how desktop systems with Intel chips are now regularly exceeding their rated TDPs – sometimes by extreme amounts – as motherboard vendors continue to push them to run as hard as possible for the best performance.
But things have changed since 2012. At the time, this wasn't so much of an issue, as overclocking was actually very favorable to increasing the performance of processors. But in 2024 with chips such as the Intel Core i9-14900K, we have CPUs shipping with a maximum turbo clock speed of 6.0 GHz and a peak power consumption of over 400 Watts, figures that were only a pipe dream a decade ago.
Jumping to the present time, over the weekend Intel released a statement about the matter to its partners, outlining their investigation so far and their sug... CPUs
From "Why Intel Processors Draw More Power Than Expected: TDP and Turbo Explained"
Kioxia Details BiCS 8 NAND at FMS 2024: 218 Layers With Superior Scaling
Kioxia's booth at FMS 2024 was a busy one with multiple technology demonstrations keeping visitors occupied. A walk-through of the BiCS 8 manufacturing process was the first to grab my attention. Kioxia and Western Digital announced the sampling of BiCS 8 in March 2023. We had touched briefly upon its CMOS Bonded Array (CBA) scheme in our coverage of Kioxial's 2Tb QLC NAND device and coverage of Western Digital's 128 TB QLC enterprise SSD proof-of-concept demonstration. At Kioxia's booth, we got more insights.
Traditionally, fabrication of flash chips involved placement of the associate logic circuitry (CMOS process) around the periphery of the flash array. The process then moved on to putting the CMOS under the cell array, but the wafer development process was serialized with the CMOS logic getting fabricated first followed by the cell array on top. However, this has some challenges because the cell array requires a high-temperature processing step to ensure higher reliability that can be detrimental to the health of the CMOS logic. Thanks to recent advancements in wafer bonding techniques, the new CBA process allows the CMOS wafer and cell array wafer to be processed independently in parallel and then pieced together, as shown in the models above.
The BiCS 8 3D NAND incorporates 218 layers, compared to 112 layers in BiCS 5 and 162 layers in BiCS 6. The company decided to skip over BiCS 7 (or, rather, it was probably a short-lived generation meant as an internal test vehicle). The generation retains the four-plane charge trap structure of BiCS 6. In its TLC avatar, it is available as a 1 Tbit device. The QLC version is available in two capacities - 1 Tbit and 2 Tbit.
Kioxia also noted that while the number of layers (218) doesn't compare favorably with the latest layer counts from the competition, its lateral scaling / cell shrinkage has enabled it to be competitive in terms of bit density as well as operating speeds (3200 MT/s). For reference, the latest shipping NAND from Micron - the G9 - has 276 layers with a bit density in TLC mode of 21 Gbit/mm2, and operates at up to 3600 MT/s. However, its 232L NAND operates only up to 2400 MT/s and has a bit density of 14.6 Gbit/mm2.
It must be noted that the CBA hybrid bonding process has advantages over the current processes used by other vendors - including Micron's CMOS under array (CuA) and SK hynix's 4D PUC (periphery-under-chip) developed in the late 2010s. It is expected that other NAND vendors will also move eventually to some variant of the hybrid bonding scheme used by Kioxia.
Storage
ASMedia Preps USB4 v2 Controller and PHY 
The USB Implementers Forum (USB-IF) introduced USB4 version 2.0 in fall 2022, and it expects systems and devices with the tech to emerge later this year and into next year. These upcoming products will largely rely on Intel's Barlow Ridge controller, a full-featured Thunderbolt 5 controller that goes above and beond the baseline USB4 v2 spec. And though extremely capable, Intel's Thunderbolt controllers are also quite expensive, and Barlow Ridge isn't expected to be any different. Fortunately, for system and device vendors that just need a basic USB4 v2 solution, ASMedia is also working on its own USB4 v2 controller.
At Computex 2024, ASMedia demonstrated a prototype of its upcoming USB4 v2 physical interface (PHY), which will support USB4 v2's new Gen 4 (160Gbps) data rates and the associated PAM-3 signal encoding. The prototype was implemented using an FPGA, as the company yet has to tape out the completed controller.
Ultimately, the purpose of showing off a FPGA-based PHY at Computex was to allow ASMedia to demonstrate their current PHY design. With the shift to PAM-3 encoding for USB4 v2, ASMedia (and the rest of the USB ecosystem) must develop significantly more complex controllers – and there's no part of that more critical than a solid and reliable PHY design.
As part of their demonstration, ASMedia had a classic eye diagram display. The eye diagram demoed has a clear opening in the center, which is indicative of good signal integrity, as the larger the eye opening, the less distortion and noise in the signal. The horizontal width of the eye opening represents the time window in which the signal can be sampled correctly, so the relatively narrow horizontal spread of the eye opening suggests that there is minimal jitter, meaning the signal transitions are consistent and predictable. Finally, the vertical height of the eye opening indicates the signal amplitude and the rather tall eye opening suggests a higher signal-to-noise ratio (SNR), meaning that the signal is strong compared to any noise present.
ASMedia itself is one of the major suppliers for discrete USB controllers, so the availability of ASMedia's USB4 v2 chip is crucial for adoption of the standard in general. While Intel will spearhead the industry with their Barlow Ridge Thunderbolt 5/USB4 v2 controller, ASMedia's controller is poised to end up in a far larger range of devices. So the importance of the company's USB4 v2 PHY demo is hard to overstate.
Demos aside, ASMedia is hoping to tape the chip out soon. If all goes well, the company expects their first USB4 v2 controllers to hit the market some time in the second half of 2025.
Peripherals
Silicon Motion Demonstrates Flexible Data Placement on MonTitan Gen 5 Enterprise SSD Platform 
At FMS 2024, the technological requirements from the storage and memory subsystem took center stage. Both SSD and controller vendors had various demonstrations touting their suitability for different stages of the AI data pipeline - ingestion, preparation, training, checkpointing, and inference. Vendors like Solidigm have different types of SSDs optimized for different stages of the pipeline. At the same time, controller vendors have taken advantage of one of the features introduced recently in the NVM Express standard - Flexible Data Placement (FDP).
FDP involves the host providing information / hints about the areas where the controller could place the incoming write data in order to reduce the write amplification. These hints are generated based on specific block sizes advertised by the device. The feature is completely backwards-compatible, with non-FDP hosts working just as before with FDP-enabled SSDs, and vice-versa.
Silicon Motion's MonTitan Gen 5 Enterprise SSD Platform was announced back in 2022. Since then, Silicon Motion has been touting the flexibility of the platform, allowing its customers to incorporate their own features as part of the customization process. This approach is common in the enterprise space, as we have seen with Marvell's Bravera SC5 SSD controller in the DapuStor SSDs and Microchip's Flashtec controllers in the Longsys FORESEE enterprise SSDs.
At FMS 2024, the company was demonstrating the advantages of flexible data placement by allowing a single QLC SSD based on their MonTitan platform to take part in different stages of the AI data pipeline while maintaining the required quality of service (minimum bandwidth) for each process. The company even has a trademarked name (PerformaShape) for the firmware feature in the controller that allows the isolation of different concurrent SSD accesses (from different stages in the AI data pipeline) to guarantee this QoS. Silicon Motion claims that this scheme will enable its customers to get the maximum write performance possible from QLC SSDs without negatively impacting the performance of other types of accesses.
Silicon Motion and Phison have market leadership in the client SSD controller market with similar approaches. However, their enterprise SSD controller marketing couldn't be more different. While Phison has gone in for a turnkey solution with their Gen 5 SSD platform (to the extent of not adopting the white label route for this generation, and instead opting to get the SSDs qualified with different cloud service providers themselves), Silicon Motion is opting for a different approach. The flexibility and customization possibilities can make platforms like the MonTitan appeal to flash array vendors.
Storage
![](https://twitter.com/share?url=https://compbuddey.blogspot.com/2024/04/tsmc-to-receive-66b-under-us-chips-act_11.html&text=TSMC to Receive $6.6B Under US CHIPS Act, Set to Build 2nm Fab in Arizona <p align="center"><a href="https://www.anandtech.com/show/21337/tsmc-to-receive-6b-us-chips-act-set-to-build-2nm-fab-in-arizona"><img src="https://images.anandtech.com/doci/21337/tsmc_semiconductor_fab12_1_575px.jpg" alt="" /></a></p><p><p>TSMC has entered into a preliminary agreement with the U.S. Department of Commerce, securing up to $6.6 billion in direct funding and access to up to $5 billion in loans under the CHIPS and Science Act. With this latest round of support from the U.S. government, TSMC in turn will be adding a third fab to their Arizona project, with its investment in the region soaring to more than $65 billion. This move not only signifies the largest foreign direct investment in Arizona but also marks one of the biggest support packages that the U.S. government plans to make under the CHIPS Act, second only to <a href="https://www.anandtech.com/show/21314/intel-to-get-85-billion-from-us-govt-to-build-fabs-in-the-us">Intel's $8.5 billion award last month</a>.</p>
<p>TSMC is currently equipping its Fab 21 phase 1 and expects that it will start making chips using N4 and N5 (4 nm and 5 nm-class) process technologies in the first half of 2025. TSMC's Fab 21 phase 2 will commence operations in 2028, and will make chips on N3 and N2 (3 nm and 2 nm-class) production nodes. The newly-announced third fab (designation TBD) is set to manufacture chips on processes of 2 nm-class or beyond, with the start of production anticipated by the end of the decade.</p>
<p>TSMC has not announced a planned capacity for the new fab, only noting that it will be similar to the other two Arizona fabs, boasting a cleanroom space roughly twice as large as that of a typical "industry-standard logic fab." If it is sized similarly to the other Arizona fabs, then this strongly implies that the new fab will be another MegaFab-class facility – <a href="https://www.anandtech.com/show/18682/tsmc-unveils-major-us-fab-expansion-plans-3nm-and-40-billion">a mid-range fab producing around 25,000 wafer starts per month</a>. TSMC does operate even larger fabs – the 100K WSPM GigaFab – though to date they've yet to build any of these outside of Taiwan.</p>
<p>“The CHIPS and Science Act provides TSMC the opportunity to make this unprecedented investment and to offer our foundry service of the most advanced manufacturing technologies in the United States,” said TSMC Chairman Dr. Mark Liu. “Our U.S. operations allow us to better support our U.S. customers, which include several of the world’s leading technology companies. Our U.S. operations will also expand our capability to trailblaze future advancements in semiconductor technology.”</p>
<p>The construction of three fabs in Arizona is poised to generate approximately 6,000 direct high-tech jobs, contributing significantly to the creation of a skilled workforce. This workforce is expected to play a crucial role in fostering a dynamic and competitive global semiconductor ecosystem. Moreover, the project is projected to create over 20,000 construction jobs, in addition to spawning tens of thousands of indirect jobs related to suppliers and consumer services.</p>
<p>AMD, Apple, and NVIDIA fully support TSMC's project and all of them expressed interest in using TSMC's capacities in the U.S.</p>
<p>“Today’s announcement highlights the strong commitment from Secretary Raimondo and the entire administration to ensure the U.S. plays a central role creating a more geographically diverse and resilient semiconductor supply chain,” said AMD Chair and CEO Lisa Su. “TSMC has a long track record of providing the leading-edge manufacturing capabilities that have enabled AMD to focus on what we do best, designing high-performance chips that change the world. We are committed to our partnership with TSMC and look forward to building our most advanced chips in U.S.”</p>
<p>TSMC's ventures in Arizona have encountered obstacles, such as setbacks caused by labor shortages and doubts about the U.S. governmental funding. As a result, production at the second facility has been postponed from 2026 to 2028. Moreover, Bloomberg has reported that at least one supplier for TSMC has called off its intended project in Arizona, attributing the decision to challenges in securing a workforce. The address the workforce issues, the TSMC grant includes a $50 million allocation for training of the local workforce.</p>
<p>Sources: <a href="https://pr.tsmc.com/english/news/3122">TSMC</a>, <a href="https://www.bloomberg.com/news/articles/2024-04-08/tsmc-gets-11-6-billion-in-us-grants-loans-for-three-chip-fabs">Bloomberg</a></p>
</p> Semiconductors){kind=link}
![](https://www.pinterest.com/pin/create/button/?url=https://compbuddey.blogspot.com/2024/04/tsmc-to-receive-66b-under-us-chips-act_11.html&media=https://lh3.googleusercontent.com/blogger_img_proxy/AEn0k_t-67N9-x35pyfKW73pClsLVtgQ2jTRtPYt6HBqdTSqSB4CPDSj8Vu1KUGaZTTkQUY_3L53kg8NA4qNssC0uM7d9lyH-naIcZ5RkqhBX1Mf4JVIO6AkvUoS170uIdWK7GLA0RKwwniwMhHIVpNKO1E&description=TSMC to Receive $6.6B Under US CHIPS Act, Set to Build 2nm Fab in Arizona <p align="center"><a href="https://www.anandtech.com/show/21337/tsmc-to-receive-6b-us-chips-act-set-to-build-2nm-fab-in-arizona"><img src="https://images.anandtech.com/doci/21337/tsmc_semiconductor_fab12_1_575px.jpg" alt="" /></a></p><p><p>TSMC has entered into a preliminary agreement with the U.S. Department of Commerce, securing up to $6.6 billion in direct funding and access to up to $5 billion in loans under the CHIPS and Science Act. With this latest round of support from the U.S. government, TSMC in turn will be adding a third fab to their Arizona project, with its investment in the region soaring to more than $65 billion. This move not only signifies the largest foreign direct investment in Arizona but also marks one of the biggest support packages that the U.S. government plans to make under the CHIPS Act, second only to <a href="https://www.anandtech.com/show/21314/intel-to-get-85-billion-from-us-govt-to-build-fabs-in-the-us">Intel's $8.5 billion award last month</a>.</p>
<p>TSMC is currently equipping its Fab 21 phase 1 and expects that it will start making chips using N4 and N5 (4 nm and 5 nm-class) process technologies in the first half of 2025. TSMC's Fab 21 phase 2 will commence operations in 2028, and will make chips on N3 and N2 (3 nm and 2 nm-class) production nodes. The newly-announced third fab (designation TBD) is set to manufacture chips on processes of 2 nm-class or beyond, with the start of production anticipated by the end of the decade.</p>
<p>TSMC has not announced a planned capacity for the new fab, only noting that it will be similar to the other two Arizona fabs, boasting a cleanroom space roughly twice as large as that of a typical "industry-standard logic fab." If it is sized similarly to the other Arizona fabs, then this strongly implies that the new fab will be another MegaFab-class facility – <a href="https://www.anandtech.com/show/18682/tsmc-unveils-major-us-fab-expansion-plans-3nm-and-40-billion">a mid-range fab producing around 25,000 wafer starts per month</a>. TSMC does operate even larger fabs – the 100K WSPM GigaFab – though to date they've yet to build any of these outside of Taiwan.</p>
<p>“The CHIPS and Science Act provides TSMC the opportunity to make this unprecedented investment and to offer our foundry service of the most advanced manufacturing technologies in the United States,” said TSMC Chairman Dr. Mark Liu. “Our U.S. operations allow us to better support our U.S. customers, which include several of the world’s leading technology companies. Our U.S. operations will also expand our capability to trailblaze future advancements in semiconductor technology.”</p>
<p>The construction of three fabs in Arizona is poised to generate approximately 6,000 direct high-tech jobs, contributing significantly to the creation of a skilled workforce. This workforce is expected to play a crucial role in fostering a dynamic and competitive global semiconductor ecosystem. Moreover, the project is projected to create over 20,000 construction jobs, in addition to spawning tens of thousands of indirect jobs related to suppliers and consumer services.</p>
<p>AMD, Apple, and NVIDIA fully support TSMC's project and all of them expressed interest in using TSMC's capacities in the U.S.</p>
<p>“Today’s announcement highlights the strong commitment from Secretary Raimondo and the entire administration to ensure the U.S. plays a central role creating a more geographically diverse and resilient semiconductor supply chain,” said AMD Chair and CEO Lisa Su. “TSMC has a long track record of providing the leading-edge manufacturing capabilities that have enabled AMD to focus on what we do best, designing high-performance chips that change the world. We are committed to our partnership with TSMC and look forward to building our most advanced chips in U.S.”</p>
<p>TSMC's ventures in Arizona have encountered obstacles, such as setbacks caused by labor shortages and doubts about the U.S. governmental funding. As a result, production at the second facility has been postponed from 2026 to 2028. Moreover, Bloomberg has reported that at least one supplier for TSMC has called off its intended project in Arizona, attributing the decision to challenges in securing a workforce. The address the workforce issues, the TSMC grant includes a $50 million allocation for training of the local workforce.</p>
<p>Sources: <a href="https://pr.tsmc.com/english/news/3122">TSMC</a>, <a href="https://www.bloomberg.com/news/articles/2024-04-08/tsmc-gets-11-6-billion-in-us-grants-loans-for-three-chip-fabs">Bloomberg</a></p>
</p> Semiconductors){kind=link}
![](https://web.whatsapp.com/send?text=TSMC to Receive $6.6B Under US CHIPS Act, Set to Build 2nm Fab in Arizona <p align="center"><a href="https://www.anandtech.com/show/21337/tsmc-to-receive-6b-us-chips-act-set-to-build-2nm-fab-in-arizona"><img src="https://images.anandtech.com/doci/21337/tsmc_semiconductor_fab12_1_575px.jpg" alt="" /></a></p><p><p>TSMC has entered into a preliminary agreement with the U.S. Department of Commerce, securing up to $6.6 billion in direct funding and access to up to $5 billion in loans under the CHIPS and Science Act. With this latest round of support from the U.S. government, TSMC in turn will be adding a third fab to their Arizona project, with its investment in the region soaring to more than $65 billion. This move not only signifies the largest foreign direct investment in Arizona but also marks one of the biggest support packages that the U.S. government plans to make under the CHIPS Act, second only to <a href="https://www.anandtech.com/show/21314/intel-to-get-85-billion-from-us-govt-to-build-fabs-in-the-us">Intel's $8.5 billion award last month</a>.</p>
<p>TSMC is currently equipping its Fab 21 phase 1 and expects that it will start making chips using N4 and N5 (4 nm and 5 nm-class) process technologies in the first half of 2025. TSMC's Fab 21 phase 2 will commence operations in 2028, and will make chips on N3 and N2 (3 nm and 2 nm-class) production nodes. The newly-announced third fab (designation TBD) is set to manufacture chips on processes of 2 nm-class or beyond, with the start of production anticipated by the end of the decade.</p>
<p>TSMC has not announced a planned capacity for the new fab, only noting that it will be similar to the other two Arizona fabs, boasting a cleanroom space roughly twice as large as that of a typical "industry-standard logic fab." If it is sized similarly to the other Arizona fabs, then this strongly implies that the new fab will be another MegaFab-class facility – <a href="https://www.anandtech.com/show/18682/tsmc-unveils-major-us-fab-expansion-plans-3nm-and-40-billion">a mid-range fab producing around 25,000 wafer starts per month</a>. TSMC does operate even larger fabs – the 100K WSPM GigaFab – though to date they've yet to build any of these outside of Taiwan.</p>
<p>“The CHIPS and Science Act provides TSMC the opportunity to make this unprecedented investment and to offer our foundry service of the most advanced manufacturing technologies in the United States,” said TSMC Chairman Dr. Mark Liu. “Our U.S. operations allow us to better support our U.S. customers, which include several of the world’s leading technology companies. Our U.S. operations will also expand our capability to trailblaze future advancements in semiconductor technology.”</p>
<p>The construction of three fabs in Arizona is poised to generate approximately 6,000 direct high-tech jobs, contributing significantly to the creation of a skilled workforce. This workforce is expected to play a crucial role in fostering a dynamic and competitive global semiconductor ecosystem. Moreover, the project is projected to create over 20,000 construction jobs, in addition to spawning tens of thousands of indirect jobs related to suppliers and consumer services.</p>
<p>AMD, Apple, and NVIDIA fully support TSMC's project and all of them expressed interest in using TSMC's capacities in the U.S.</p>
<p>“Today’s announcement highlights the strong commitment from Secretary Raimondo and the entire administration to ensure the U.S. plays a central role creating a more geographically diverse and resilient semiconductor supply chain,” said AMD Chair and CEO Lisa Su. “TSMC has a long track record of providing the leading-edge manufacturing capabilities that have enabled AMD to focus on what we do best, designing high-performance chips that change the world. We are committed to our partnership with TSMC and look forward to building our most advanced chips in U.S.”</p>
<p>TSMC's ventures in Arizona have encountered obstacles, such as setbacks caused by labor shortages and doubts about the U.S. governmental funding. As a result, production at the second facility has been postponed from 2026 to 2028. Moreover, Bloomberg has reported that at least one supplier for TSMC has called off its intended project in Arizona, attributing the decision to challenges in securing a workforce. The address the workforce issues, the TSMC grant includes a $50 million allocation for training of the local workforce.</p>
<p>Sources: <a href="https://pr.tsmc.com/english/news/3122">TSMC</a>, <a href="https://www.bloomberg.com/news/articles/2024-04-08/tsmc-gets-11-6-billion-in-us-grants-loans-for-three-chip-fabs">Bloomberg</a></p>
</p> Semiconductors | https://compbuddey.blogspot.com/2024/04/tsmc-to-receive-66b-under-us-chips-act_11.html){kind=link}
![](mailto:?subject=TSMC to Receive $6.6B Under US CHIPS Act, Set to Build 2nm Fab in Arizona <p align="center"><a href="https://www.anandtech.com/show/21337/tsmc-to-receive-6b-us-chips-act-set-to-build-2nm-fab-in-arizona"><img src="https://images.anandtech.com/doci/21337/tsmc_semiconductor_fab12_1_575px.jpg" alt="" /></a></p><p><p>TSMC has entered into a preliminary agreement with the U.S. Department of Commerce, securing up to $6.6 billion in direct funding and access to up to $5 billion in loans under the CHIPS and Science Act. With this latest round of support from the U.S. government, TSMC in turn will be adding a third fab to their Arizona project, with its investment in the region soaring to more than $65 billion. This move not only signifies the largest foreign direct investment in Arizona but also marks one of the biggest support packages that the U.S. government plans to make under the CHIPS Act, second only to <a href="https://www.anandtech.com/show/21314/intel-to-get-85-billion-from-us-govt-to-build-fabs-in-the-us">Intel's $8.5 billion award last month</a>.</p>
<p>TSMC is currently equipping its Fab 21 phase 1 and expects that it will start making chips using N4 and N5 (4 nm and 5 nm-class) process technologies in the first half of 2025. TSMC's Fab 21 phase 2 will commence operations in 2028, and will make chips on N3 and N2 (3 nm and 2 nm-class) production nodes. The newly-announced third fab (designation TBD) is set to manufacture chips on processes of 2 nm-class or beyond, with the start of production anticipated by the end of the decade.</p>
<p>TSMC has not announced a planned capacity for the new fab, only noting that it will be similar to the other two Arizona fabs, boasting a cleanroom space roughly twice as large as that of a typical "industry-standard logic fab." If it is sized similarly to the other Arizona fabs, then this strongly implies that the new fab will be another MegaFab-class facility – <a href="https://www.anandtech.com/show/18682/tsmc-unveils-major-us-fab-expansion-plans-3nm-and-40-billion">a mid-range fab producing around 25,000 wafer starts per month</a>. TSMC does operate even larger fabs – the 100K WSPM GigaFab – though to date they've yet to build any of these outside of Taiwan.</p>
<p>“The CHIPS and Science Act provides TSMC the opportunity to make this unprecedented investment and to offer our foundry service of the most advanced manufacturing technologies in the United States,” said TSMC Chairman Dr. Mark Liu. “Our U.S. operations allow us to better support our U.S. customers, which include several of the world’s leading technology companies. Our U.S. operations will also expand our capability to trailblaze future advancements in semiconductor technology.”</p>
<p>The construction of three fabs in Arizona is poised to generate approximately 6,000 direct high-tech jobs, contributing significantly to the creation of a skilled workforce. This workforce is expected to play a crucial role in fostering a dynamic and competitive global semiconductor ecosystem. Moreover, the project is projected to create over 20,000 construction jobs, in addition to spawning tens of thousands of indirect jobs related to suppliers and consumer services.</p>
<p>AMD, Apple, and NVIDIA fully support TSMC's project and all of them expressed interest in using TSMC's capacities in the U.S.</p>
<p>“Today’s announcement highlights the strong commitment from Secretary Raimondo and the entire administration to ensure the U.S. plays a central role creating a more geographically diverse and resilient semiconductor supply chain,” said AMD Chair and CEO Lisa Su. “TSMC has a long track record of providing the leading-edge manufacturing capabilities that have enabled AMD to focus on what we do best, designing high-performance chips that change the world. We are committed to our partnership with TSMC and look forward to building our most advanced chips in U.S.”</p>
<p>TSMC's ventures in Arizona have encountered obstacles, such as setbacks caused by labor shortages and doubts about the U.S. governmental funding. As a result, production at the second facility has been postponed from 2026 to 2028. Moreover, Bloomberg has reported that at least one supplier for TSMC has called off its intended project in Arizona, attributing the decision to challenges in securing a workforce. The address the workforce issues, the TSMC grant includes a $50 million allocation for training of the local workforce.</p>
<p>Sources: <a href="https://pr.tsmc.com/english/news/3122">TSMC</a>, <a href="https://www.bloomberg.com/news/articles/2024-04-08/tsmc-gets-11-6-billion-in-us-grants-loans-for-three-chip-fabs">Bloomberg</a></p>
</p> Semiconductors&body=https://compbuddey.blogspot.com/2024/04/tsmc-to-receive-66b-under-us-chips-act_11.html){kind=link}
The Endorfy Fortis 5 Dual Fan CPU Cooler Review: Towering Value Standard CPU coolers, while adequate for managing basic thermal loads, often fall short in terms of noise reduction and superior cooling efficiency. This limitation drives advanced users and system builders to seek aftermarket solutions tailored to their specific needs. The high-end aftermarket cooler market is highly competitive, with manufacturers striving to offer products with exceptional performance.
Endorfy, previously known as SilentiumPC, is a Polish manufacturer that has undergone a significant transformation to expand its presence in global markets. The brand is known for delivering high-performance cooling solutions with a strong focus on balancing efficiency and affordability. By rebranding as Endorfy, the company aims to enter premium market segments while continuing to offer reliable, high-quality cooling products.
SilentiumPC became very popular in the value/mainstream segments of the PC market with their products, the spearhead of which probably was the Fera 5 cooler that we reviewed a little over two years ago and had a remarkable value for money. Today’s review places Endorfy’s largest CPU cooler, the Fortis 5 Dual Fan, on our laboratory test bench. The Fortis 5 is the largest CPU air cooler the company currently offers and is significantly more expensive than the Fera 5, yet it still is a single-tower cooler that strives to strike a balance between value, compatibility, and performance.
Cases/Cooling/PSUs
Lorem Ipsum is simply dummy text of the printing and typesetting industry. Lorem Ipsum has been the industry's.
Kioxia Details BiCS 8 NAND at FMS 2024: 218 Layers With Superior Scaling
Kioxia's booth at FMS 2024 was a busy one with multiple technology demonstrations keeping visitors occupied. A walk-through of the BiCS 8 manufacturing process was the first to grab my attention. Kioxia and Western Digital announced the sampling of BiCS 8 in March 2023. We had touched briefly upon its CMOS Bonded Array (CBA) scheme in our coverage of Kioxial's 2Tb QLC NAND device and coverage of Western Digital's 128 TB QLC enterprise SSD proof-of-concept demonstration. At Kioxia's booth, we got more insights.
Traditionally, fabrication of flash chips involved placement of the associate logic circuitry (CMOS process) around the periphery of the flash array. The process then moved on to putting the CMOS under the cell array, but the wafer development process was serialized with the CMOS logic getting fabricated first followed by the cell array on top. However, this has some challenges because the cell array requires a high-temperature processing step to ensure higher reliability that can be detrimental to the health of the CMOS logic. Thanks to recent advancements in wafer bonding techniques, the new CBA process allows the CMOS wafer and cell array wafer to be processed independently in parallel and then pieced together, as shown in the models above.
The BiCS 8 3D NAND incorporates 218 layers, compared to 112 layers in BiCS 5 and 162 layers in BiCS 6. The company decided to skip over BiCS 7 (or, rather, it was probably a short-lived generation meant as an internal test vehicle). The generation retains the four-plane charge trap structure of BiCS 6. In its TLC avatar, it is available as a 1 Tbit device. The QLC version is available in two capacities - 1 Tbit and 2 Tbit.
Kioxia also noted that while the number of layers (218) doesn't compare favorably with the latest layer counts from the competition, its lateral scaling / cell shrinkage has enabled it to be competitive in terms of bit density as well as operating speeds (3200 MT/s). For reference, the latest shipping NAND from Micron - the G9 - has 276 layers with a bit density in TLC mode of 21 Gbit/mm2, and operates at up to 3600 MT/s. However, its 232L NAND operates only up to 2400 MT/s and has a bit density of 14.6 Gbit/mm2.
It must be noted that the CBA hybrid bonding process has advantages over the current processes used by other vendors - including Micron's CMOS under array (CuA) and SK hynix's 4D PUC (periphery-under-chip) developed in the late 2010s. It is expected that other NAND vendors will also move eventually to some variant of the hybrid bonding scheme used by Kioxia.
Storage
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