Microchip recently announced the availability of their second PCIe Gen 5 enterprise SSD controller - the Flashtec 5016. Like the 4016, this is also a 16-channel controller, but there are some key updates:
Microchip's enterprise SSD controllers provide a high level of flexibility to SSD vendors by providing them with significant horsepower and accelerators. The 5016 includes Cortex-A53 cores for SSD vendors to run custom applications relevant to SSD management. However, compared to the Gen4 controllers, there are two additional cores in the CPU cluster. The DRAM subsystem includes ECC support (both out-of-band and inline, as desired by the SSD vendor).
At FMS 2024, the company demonstrated an application of the neural network engines embedded in the Gen5 controllers. Controllers usually employ a 'read-retry' operation with altered read-out voltages for flash reads that do not complete successfully. Microchip implemented a machine learning approach to determine the read-out voltage based on the health history of the NAND block using the NN engines in the controller. This approach delivers tangible benefits for read latency and power consumption (thanks to a smaller number of errors on the first read).
The 4016 and 5016 come with a single-chip root of trust implementation for hardware security. A secure boot process with dual-signature authentication ensures that the controller firmware is not maliciously altered in the field. The company also brought out the advantages of their controller's implementation of SR-IOV, flexible data placement, and zoned namespaces along with their 'credit engine' scheme for multi-tenant cloud workloads. These aspects were also brought out in other demonstrations.
Microchip's press release included quotes from the usual NAND vendors - Solidigm, Kioxia, and Micron. On the customer front, Longsys has been using Flashtec controllers in their enterprise offerings along with YMTC NAND. It is likely that this collaboration will continue further using the new 5016 controller.
StorageKioxia's booth at FMS 2024 was a busy one with multiple technology demonstrations keeping visitors occupied. A walk-through of the BiCS 8 manufacturing process was the first to grab my attention. Kioxia and Western Digital announced the sampling of BiCS 8 in March 2023. We had touched briefly upon its CMOS Bonded Array (CBA) scheme in our coverage of Kioxial's 2Tb QLC NAND device and coverage of Western Digital's 128 TB QLC enterprise SSD proof-of-concept demonstration. At Kioxia's booth, we got more insights.
Traditionally, fabrication of flash chips involved placement of the associate logic circuitry (CMOS process) around the periphery of the flash array. The process then moved on to putting the CMOS under the cell array, but the wafer development process was serialized with the CMOS logic getting fabricated first followed by the cell array on top. However, this has some challenges because the cell array requires a high-temperature processing step to ensure higher reliability that can be detrimental to the health of the CMOS logic. Thanks to recent advancements in wafer bonding techniques, the new CBA process allows the CMOS wafer and cell array wafer to be processed independently in parallel and then pieced together, as shown in the models above.
The BiCS 8 3D NAND incorporates 218 layers, compared to 112 layers in BiCS 5 and 162 layers in BiCS 6. The company decided to skip over BiCS 7 (or, rather, it was probably a short-lived generation meant as an internal test vehicle). The generation retains the four-plane charge trap structure of BiCS 6. In its TLC avatar, it is available as a 1 Tbit device. The QLC version is available in two capacities - 1 Tbit and 2 Tbit.
Kioxia also noted that while the number of layers (218) doesn't compare favorably with the latest layer counts from the competition, its lateral scaling / cell shrinkage has enabled it to be competitive in terms of bit density as well as operating speeds (3200 MT/s). For reference, the latest shipping NAND from Micron - the G9 - has 276 layers with a bit density in TLC mode of 21 Gbit/mm2, and operates at up to 3600 MT/s. However, its 232L NAND operates only up to 2400 MT/s and has a bit density of 14.6 Gbit/mm2.
It must be noted that the CBA hybrid bonding process has advantages over the current processes used by other vendors - including Micron's CMOS under array (CuA) and SK hynix's 4D PUC (periphery-under-chip) developed in the late 2010s. It is expected that other NAND vendors will also move eventually to some variant of the hybrid bonding scheme used by Kioxia.
StorageSK hynix early in Friday announced that the company has finished the development of it's PCB01 PCIe Gen5 SSD, the company's forthcoming high-end SSD for OEMs. Based on the company's new Alistar platform, the PCB01 is designed to deliver chart-topping performance for client machines. And, as a sign of the times, SK hynix is positioning the PCB01 for AI PCs, looking to synergize with the overall industry interest in anything and everything AI.
The bare, OEM-focused drives have previously been shown off by SK hynix, and make no attempt to hide what's under the hood. The PCB01 relies on SK hynix's Alistar controller, which features a PCIe Gen5 x4 host interface on the front end and eight NAND channels on the back end, placing it solidly in the realm of high-end SSDs. Paired with the Alistar controller is the company's latest 238-layer TLC NAND (H25T1TD48C & H25T2TD88C), which offers a maximum transfer speed of 2400 MT/second. Being that this is a high-end client SSD, there's also a DRAM chip on board, though the company isn't disclosing its capacity.
As with other high-end PCIe 5.0 client SSDs, SK hynix is planning on hitting peak read speeds of up to 14GB/second on the drive, while peak sequential write speeds should top 12GB/second (with pSLC caching, of course) – performance figures well within the realm of possibility for an 8 channel drive. As for random performance, at Computex the company was telling attendees that the drives should be able to sustain 4K random read and write rates of 2 million IOPS, which is very high as well. The SSDs are also said to consume up to 30% less power than 'predecessors,' according to SK hynix, though the company didn't elaborate on that figure. Typically in the storage industry, energy figures are based on iso-performance (rather than peak performance) – essentially measuring energy efficiency per bit rather than toal power consumption – and that is likely the case here as well.
At least initially, SK Hynix plans to release its PCB01 in three capacities – 512 GB, 1 TB, and 2 TB. The company has previously disclosed that their 238L TLC NAND has a capacity of 512Gbit, so these are typical capacity figures for single-sided drives. And while the focus of the company's press release this week was on OEM drives, this is the same controller and NAND that is also going into the company's previously-teased retail Platinum P51 SSD, so this week's reveal offers a bit more detail into what to expect from that drive family as well.
Specs aside, Ahn Hyun, the Head of the N-S Committee at SK hynix, said that multiple global CPU providers for on-device AI PCs are seeking collaboration for the compatibility validation process, which is underway, so expect PCB01 drives inside PCs in this back-to-school and holiday seasons.
"We will work towards enhancing our leadership as the global top AI memory provider also in the NAND solution space by successfully completing the customer validation and mass production of PCB01, which will be in the limelight," Ahn Hyun said.
SSDsFurther to our last piece which we detailed Intel's issue to motherboard vendors to follow with stock power settings for Intel's 14th and 13th Gen Core series processors, Intel has now issued a follow-up statement to this. Over the last week or so, motherboard vendors quickly released firmware updates with a new profile called 'Intel Baseline', which motherboard vendors assumed would address the instability issues.
As it turns out, Intel doesn't seem to accept this as technically, these Intel Baseline profiles are not to be confused with Intel's default specifications. This means that Intel's Baseline profiles seemingly give the impression that they are operating at default settings, hence the terminology 'baseline' used, but this still opens motherboard vendors to use their interpretations of MCE or Multi-Core Enhancement.
To clarify things for consumers, Intel has sent us the following statement:
Several motherboard manufacturers have released BIOS profiles labeled ‘Intel Baseline Profile’. However, these BIOS profiles are not the same as the 'Intel Default Settings' recommendations that Intel has recently shared with its partners regarding the instability issues reported on 13th and 14th gen K SKU processors.
These ‘Intel Baseline Profile’ BIOS settings appear to be based on power delivery guidance previously provided by Intel to manufacturers describing the various power delivery options for 13th and 14th Generation K SKU processors based on motherboard capabilities.
Intel is not recommending motherboard manufacturers to use ‘baseline’ power delivery settings on boards capable of higher values.
Intel’s recommended ‘Intel Default Settings’ are a combination of thermal and power delivery features along with a selection of possible power delivery profiles based on motherboard capabilities.
Intel recommends customers to implement the highest power delivery profile compatible with each individual motherboard design as noted in the table below:

Click to Enlarge Intel's Default Settings
What Intel's statement is effectively saying to consumers, is that users shouldn't be using the Baseline Power Delivery profiles which are offered by motherboard vendors through a plethora of firmware updates. Instead, Intel is recommending users opt for Intel Default Settings, which follows what the specific processor is rated for by Intel out of the box to achieve the clock speeds advertised, without users having to worry about firmware 'over' optimization which can cause instability as there have been many reports of happening.
Not only this, but the Intel Default settings offer a combination of thermal specifications and power capabilities, including voltage and frequency curve settings that apply to the capability of the motherboard used, and the power delivery equipped on the motherboard. At least for the most part, Intel is recommending users with 14th and 13th-Gen Core series K, KF, and KS SKUs that they do not recommend users opt in using the Baseline profiles offered by motherboard vendors.
Digesting the contrast between the two statements, the key differential is that Intel's priority is reducing the current going through the processor, which for both the 14th and 13th Gen Core series processors is a maximum of 400 A, even when using the Extreme profile. We know those motherboard vendors on their Z790 and Z690 motherboards opt for an unrestricted power profile, which is essentially 'unlimited' power and current to maximize performance at the cost of power consumption and heat, which does exacerbate problems and can lead to frequent bouts of instability, especially on high-intensity workloads.
Another variable Intel is recommending is that the AC Load Line must match the design target of the processor, with a maximum value of 1.1 mOhm, and that the DC Load Line must be ... CPUs
Kioxia's booth at FMS 2024 was a busy one with multiple technology demonstrations keeping visitors occupied. A walk-through of the BiCS 8 manufacturing process was the first to grab my attention. Kioxia and Western Digital announced the sampling of BiCS 8 in March 2023. We had touched briefly upon its CMOS Bonded Array (CBA) scheme in our coverage of Kioxial's 2Tb QLC NAND device and coverage of Western Digital's 128 TB QLC enterprise SSD proof-of-concept demonstration. At Kioxia's booth, we got more insights.
Traditionally, fabrication of flash chips involved placement of the associate logic circuitry (CMOS process) around the periphery of the flash array. The process then moved on to putting the CMOS under the cell array, but the wafer development process was serialized with the CMOS logic getting fabricated first followed by the cell array on top. However, this has some challenges because the cell array requires a high-temperature processing step to ensure higher reliability that can be detrimental to the health of the CMOS logic. Thanks to recent advancements in wafer bonding techniques, the new CBA process allows the CMOS wafer and cell array wafer to be processed independently in parallel and then pieced together, as shown in the models above.
The BiCS 8 3D NAND incorporates 218 layers, compared to 112 layers in BiCS 5 and 162 layers in BiCS 6. The company decided to skip over BiCS 7 (or, rather, it was probably a short-lived generation meant as an internal test vehicle). The generation retains the four-plane charge trap structure of BiCS 6. In its TLC avatar, it is available as a 1 Tbit device. The QLC version is available in two capacities - 1 Tbit and 2 Tbit.
Kioxia also noted that while the number of layers (218) doesn't compare favorably with the latest layer counts from the competition, its lateral scaling / cell shrinkage has enabled it to be competitive in terms of bit density as well as operating speeds (3200 MT/s). For reference, the latest shipping NAND from Micron - the G9 - has 276 layers with a bit density in TLC mode of 21 Gbit/mm2, and operates at up to 3600 MT/s. However, its 232L NAND operates only up to 2400 MT/s and has a bit density of 14.6 Gbit/mm2.
It must be noted that the CBA hybrid bonding process has advantages over the current processes used by other vendors - including Micron's CMOS under array (CuA) and SK hynix's 4D PUC (periphery-under-chip) developed in the late 2010s. It is expected that other NAND vendors will also move eventually to some variant of the hybrid bonding scheme used by Kioxia.
StorageSK hynix early in Friday announced that the company has finished the development of it's PCB01 PCIe Gen5 SSD, the company's forthcoming high-end SSD for OEMs. Based on the company's new Alistar platform, the PCB01 is designed to deliver chart-topping performance for client machines. And, as a sign of the times, SK hynix is positioning the PCB01 for AI PCs, looking to synergize with the overall industry interest in anything and everything AI.
The bare, OEM-focused drives have previously been shown off by SK hynix, and make no attempt to hide what's under the hood. The PCB01 relies on SK hynix's Alistar controller, which features a PCIe Gen5 x4 host interface on the front end and eight NAND channels on the back end, placing it solidly in the realm of high-end SSDs. Paired with the Alistar controller is the company's latest 238-layer TLC NAND (H25T1TD48C & H25T2TD88C), which offers a maximum transfer speed of 2400 MT/second. Being that this is a high-end client SSD, there's also a DRAM chip on board, though the company isn't disclosing its capacity.
As with other high-end PCIe 5.0 client SSDs, SK hynix is planning on hitting peak read speeds of up to 14GB/second on the drive, while peak sequential write speeds should top 12GB/second (with pSLC caching, of course) – performance figures well within the realm of possibility for an 8 channel drive. As for random performance, at Computex the company was telling attendees that the drives should be able to sustain 4K random read and write rates of 2 million IOPS, which is very high as well. The SSDs are also said to consume up to 30% less power than 'predecessors,' according to SK hynix, though the company didn't elaborate on that figure. Typically in the storage industry, energy figures are based on iso-performance (rather than peak performance) – essentially measuring energy efficiency per bit rather than toal power consumption – and that is likely the case here as well.
At least initially, SK Hynix plans to release its PCB01 in three capacities – 512 GB, 1 TB, and 2 TB. The company has previously disclosed that their 238L TLC NAND has a capacity of 512Gbit, so these are typical capacity figures for single-sided drives. And while the focus of the company's press release this week was on OEM drives, this is the same controller and NAND that is also going into the company's previously-teased retail Platinum P51 SSD, so this week's reveal offers a bit more detail into what to expect from that drive family as well.
Specs aside, Ahn Hyun, the Head of the N-S Committee at SK hynix, said that multiple global CPU providers for on-device AI PCs are seeking collaboration for the compatibility validation process, which is underway, so expect PCB01 drives inside PCs in this back-to-school and holiday seasons.
"We will work towards enhancing our leadership as the global top AI memory provider also in the NAND solution space by successfully completing the customer validation and mass production of PCB01, which will be in the limelight," Ahn Hyun said.
SSDsFurther to our last piece which we detailed Intel's issue to motherboard vendors to follow with stock power settings for Intel's 14th and 13th Gen Core series processors, Intel has now issued a follow-up statement to this. Over the last week or so, motherboard vendors quickly released firmware updates with a new profile called 'Intel Baseline', which motherboard vendors assumed would address the instability issues.
As it turns out, Intel doesn't seem to accept this as technically, these Intel Baseline profiles are not to be confused with Intel's default specifications. This means that Intel's Baseline profiles seemingly give the impression that they are operating at default settings, hence the terminology 'baseline' used, but this still opens motherboard vendors to use their interpretations of MCE or Multi-Core Enhancement.
To clarify things for consumers, Intel has sent us the following statement:
Several motherboard manufacturers have released BIOS profiles labeled ‘Intel Baseline Profile’. However, these BIOS profiles are not the same as the 'Intel Default Settings' recommendations that Intel has recently shared with its partners regarding the instability issues reported on 13th and 14th gen K SKU processors.
These ‘Intel Baseline Profile’ BIOS settings appear to be based on power delivery guidance previously provided by Intel to manufacturers describing the various power delivery options for 13th and 14th Generation K SKU processors based on motherboard capabilities.
Intel is not recommending motherboard manufacturers to use ‘baseline’ power delivery settings on boards capable of higher values.
Intel’s recommended ‘Intel Default Settings’ are a combination of thermal and power delivery features along with a selection of possible power delivery profiles based on motherboard capabilities.
Intel recommends customers to implement the highest power delivery profile compatible with each individual motherboard design as noted in the table below:

Click to Enlarge Intel's Default Settings
What Intel's statement is effectively saying to consumers, is that users shouldn't be using the Baseline Power Delivery profiles which are offered by motherboard vendors through a plethora of firmware updates. Instead, Intel is recommending users opt for Intel Default Settings, which follows what the specific processor is rated for by Intel out of the box to achieve the clock speeds advertised, without users having to worry about firmware 'over' optimization which can cause instability as there have been many reports of happening.
Not only this, but the Intel Default settings offer a combination of thermal specifications and power capabilities, including voltage and frequency curve settings that apply to the capability of the motherboard used, and the power delivery equipped on the motherboard. At least for the most part, Intel is recommending users with 14th and 13th-Gen Core series K, KF, and KS SKUs that they do not recommend users opt in using the Baseline profiles offered by motherboard vendors.
Digesting the contrast between the two statements, the key differential is that Intel's priority is reducing the current going through the processor, which for both the 14th and 13th Gen Core series processors is a maximum of 400 A, even when using the Extreme profile. We know those motherboard vendors on their Z790 and Z690 motherboards opt for an unrestricted power profile, which is essentially 'unlimited' power and current to maximize performance at the cost of power consumption and heat, which does exacerbate problems and can lead to frequent bouts of instability, especially on high-intensity workloads.
Another variable Intel is recommending is that the AC Load Line must match the design target of the processor, with a maximum value of 1.1 mOhm, and that the DC Load Line must be ... CPUs
When Western Digital introduced its Ultrastar DC SN861 SSDs earlier this year, the company did not disclose which controller it used for these drives, which made many observers presume that WD was using an in-house controller. But a recent teardown of the drive shows that is not the case; instead, the company is using a controller from Fadu, a South Korean company founded in 2015 that specializes on enterprise-grade turnkey SSD solutions.
The Western Digital Ultrastar DC SN861 SSD is aimed at performance-hungry hyperscale datacenters and enterprise customers which are adopting PCIe Gen5 storage devices these days. And, as uncovered in photos from a recent Storage Review article, the drive is based on Fadu's FC5161 NVMe 2.0-compliant controller. The FC5161 utilizes 16 NAND channels supporting an ONFi 5.0 2400 MT/s interface, and features a combination of enterprise-grade capabilities (OCP Cloud Spec 2.0, SR-IOV, up to 512 name spaces for ZNS support, flexible data placement, NVMe-MI 1.2, advanced security, telemetry, power loss protection) not available on other off-the-shelf controllers – or on any previous Western Digital controllers.
The Ultrastar DC SN861 SSD offers sequential read speeds up to 13.7 GB/s as well as sequential write speeds up to 7.5 GB/s. As for random performance, it boasts with an up to 3.3 million random 4K read IOPS and up to 0.8 million random 4K write IOPS. The drives are available in capacities between 1.6 TB and 7.68 TB with one or three drive writes per day (DWPD) over five years rating as well as in U.2 and E1.S form-factors.
While the two form factors of the SN861 share a similar technical design, Western Digital has tailored each version for distinct workloads: the E1.S supports FDP and performance enhancements specifically for cloud environments. By contrast, the U.2 model is geared towards high-performance enterprise tasks and emerging applications like AI.
Without any doubts, Western Digital's Ultrastar DC SN861 is a feature-rich high-performance enterprise-grade SSD. It has another distinctive feature: a 5W idle power consumption, which is rather low by the standards of enterprise-grade drives (e.g., it is 1W lower compared to the SN840). While the difference with predecessors may be just 1W, hyperscalers deploy thousands of drives and for their TCO every watt counts.
Western Digital's Ultrastar DC SN861 SSDs are now available for purchase to select customers (such as Meta) and to interested parties. Prices are unknown, but they will depend on such factors as volumes.
Sources: Fadu, Storage Review
StorageKioxia's booth at FMS 2024 was a busy one with multiple technology demonstrations keeping visitors occupied. A walk-through of the BiCS 8 manufacturing process was the first to grab my attention. Kioxia and Western Digital announced the sampling of BiCS 8 in March 2023. We had touched briefly upon its CMOS Bonded Array (CBA) scheme in our coverage of Kioxial's 2Tb QLC NAND device and coverage of Western Digital's 128 TB QLC enterprise SSD proof-of-concept demonstration. At Kioxia's booth, we got more insights.
Traditionally, fabrication of flash chips involved placement of the associate logic circuitry (CMOS process) around the periphery of the flash array. The process then moved on to putting the CMOS under the cell array, but the wafer development process was serialized with the CMOS logic getting fabricated first followed by the cell array on top. However, this has some challenges because the cell array requires a high-temperature processing step to ensure higher reliability that can be detrimental to the health of the CMOS logic. Thanks to recent advancements in wafer bonding techniques, the new CBA process allows the CMOS wafer and cell array wafer to be processed independently in parallel and then pieced together, as shown in the models above.
The BiCS 8 3D NAND incorporates 218 layers, compared to 112 layers in BiCS 5 and 162 layers in BiCS 6. The company decided to skip over BiCS 7 (or, rather, it was probably a short-lived generation meant as an internal test vehicle). The generation retains the four-plane charge trap structure of BiCS 6. In its TLC avatar, it is available as a 1 Tbit device. The QLC version is available in two capacities - 1 Tbit and 2 Tbit.
Kioxia also noted that while the number of layers (218) doesn't compare favorably with the latest layer counts from the competition, its lateral scaling / cell shrinkage has enabled it to be competitive in terms of bit density as well as operating speeds (3200 MT/s). For reference, the latest shipping NAND from Micron - the G9 - has 276 layers with a bit density in TLC mode of 21 Gbit/mm2, and operates at up to 3600 MT/s. However, its 232L NAND operates only up to 2400 MT/s and has a bit density of 14.6 Gbit/mm2.
It must be noted that the CBA hybrid bonding process has advantages over the current processes used by other vendors - including Micron's CMOS under array (CuA) and SK hynix's 4D PUC (periphery-under-chip) developed in the late 2010s. It is expected that other NAND vendors will also move eventually to some variant of the hybrid bonding scheme used by Kioxia.
StorageThe Ultra Ethernet Consortium (UEC) has announced this week that the next-generation interconnection consortium has grown to 55 members. And as the group works towards developing the initial version of their ultra-fast Ethernet standard, they have released some of the first technical details on the upcoming standard.
Formed in the summer of 2023, the UEC aims to develop a new standard for interconnection for AI and HPC datacenter needs, serving as a de-facto (if not de-jure) alternative to InfiniBand, which is largely under the control of NVIDIA these days. The UEC began to accept new members back in November, and just in five months' time it gained 45 new members, which highlights massive interest for the new technology. The consortium now boasts 55 members and 715 industry experts, who are working across eight technical groups.
There is a lot of work at hand for the UEC, as the group has laid out in their latest development blog post, as the consortium works to to build a unified Ethernet-based communication stack for high-performance networking supporting artificial intelligence and high-performance computing clusters. The consortium's technical objectives include developing specifications, APIs, and source code for Ultra Ethernet communications, updating existing protocols, and introducing new mechanisms for telemetry, signaling, security, and congestion management. In particular, Ultra Ethernet introduces the UEC Transport (UET) for higher network utilization and lower tail latency to speed up RDMA (Remote Direct Memory Access) operation over Ethernet. Key features include multi-path packet spraying, flexible ordering, and advanced congestion control, ensuring efficient and reliable data transfer.
These enhancements are designed to address the needs of large AI and HPC clusters — with separate profiles for each type of deployment — though everything is done in a surgical manner to enhance the technology, but reuse as much of the existing Ethernet as possible to maintain cost efficiency and interoperability.
The consortium's founding members include AMD, Arista, Broadcom, Cisco, Eviden (an Atos Business), HPE, Intel, Meta, and Microsoft. After the Ultra Ethernet Consortium (UEC) began to accept new members in October, 2023, numerous industry heavyweights have joined the group, including Baidu, Dell, Huawei, IBM, Nokia, Lenovo, Supermicro, and Tencent.
The consortium currently plans to release the initial 1.0 version of the UEC specification publicly sometime in the third quarter of 2024.
"There was always a recognition that UEC was meeting a need in the industry," said J Metz, Chair of the UEC Steering Committee. "There is a strong desire to have an open, accessible, Ethernet-based network specifically designed to accommodate AI and HPC workload requirements. This level of involvement is encouraging; it helps us achieve the goal of broad interoperability and stability."
While it is evident that then Ultra Ethernet Consortium is gaining support across the industry, it is still unclear where other industry behemoths like AWS and Google stand. While the hardware companies involved can design Ultra Ethernet support into their hardware and systems, the technology ultimately exists to serve large datacenter and HPC system operators. So it will be interesting to see what interest they take in (and how quickly they adopt) the nascent Ethernet backbone technology once hardware incorporating it is ready.
NetworkingIn addition to revealing its roadmap and plans concerning its current leading-edge process technologies, TSMC also shared progress of its N2 node as part of its Symposiums 2024. The company's first 2nm-class fabrication node, and predominantly featuring gate-all-around transistors, according to TSMC N2 has almost achieved its target performance and yield goals, which places it on track to enter high-volume manufacturing in the second half of 2025.
TSMC states that 'N2 development is well on track and N2P is next.' In particular, gate-all-around nanosheet devices currently achieve over 90% of their expected performance, whereas yields of 256 Mb SRAM (32 MB) devices already exceeds 80%, depending on the batch. All of this for a node that is over a year away from mass production.
Meanwhile, average yield of a 256 Mb SRAM was around 70% as of March, 2024, up from around 35% in April, 2023. Device performance has also been improving with higher frequencies being achieved while keeping power consumption in check.
Chip designer interest towards TSMC's first 2nm-class gate-all-around nanosheet transistor-based technology is significant, too. The number of new tape-outs (NTOs) in the first year of N2 is over two-times higher than it was for N5. Though with that said, given TSMC's close working relationship with a handful of high-volume vendors – most notably Appe – NTOs can be a very misleading figure since the first year of a new node at TSMC is capacity constrained, and consequently the bulk of that capacity goes to TSMC's priority partners.
Meanwhile, there were considerably more N5 tapeouts in its second year (some where N5P, of course) and N2 promises to have 2.6X more NTOs in its second year. So the node indeed looks quite promising. In fact, based on TSMC's slides (which we're unfortunately not able to republish), N2 is more popular than N3 in terms of NTOs both in the first and the second years of existence.
When it comes to the second year of N2, in the second half of 2026 TSMC plans to roll out its N2P technology, which promises additional performance and power benefits. N2P is expected to improve frequency by 15% - 20%, reduce power consumption by 30% - 40%, and increase chip density by over 1.15 times compared to N3E, significant benefits to move to all-new GAA nanosheet transistors.
Finally, for those companies that need the best in performance, power, and density, TSMC is poised to offer their A16 process in 2026. That node will also bring in backside power delivery, which will add costs, but is expected to greatly improve performance efficiency and scaling.
SemiconductorsNowadays highest-capacity hard drives are typically aimed at cloud service providers (CSPs) and enterprises, but this does not mean that creative professionals or regular users do not need them. To cater to demands of more regular consumers, Western Digital has started shipments of its Red Pro 24 TB HDDs, which are aimed at high-end NAS use for creative professionals with significant storage requirements.
Western Digital's Red Pro 24 TB hard drives come approximately 20 months after their 22 TB model hit retail in 2022, offering an incremental improvement to WD's highest-capacity NAS and consumer hard drive offering. The platform uses conventional magnetic recording (CMR), feature a 7200 RPM rotating speed, are equipped with a 512 MB cache, and use OptiNAND technology to improve reliability as well as optimize performance and power consumption. The HDDs are rated for an up to 287 MB/s media to cache transfer rate, which makes them some of the fastest hard drives around (albeit, still a bit slower compared to CSP and enterprise-oriented HDDs).
Just like other high-end network-attached storage-aimed HDDs, the Red Pro 24 TB hard drives use helium-filled platforms that are very similar to those designed for enterprise drives. Consequently, the Red Pro 24 TB HDD are equipped with rotation vibration sensors to anticipate and proactively counteract disturbances caused by increased vibration and multi-axis shock sensors to detect subtle shock events and automatically offset them with dynamic fly height technology to ensure that heads to not scratch disks.
UPDATE 4/2/2024: Western Digital has notified us that WD Red Pro fully support ArmorCache capability, even though it is not listed in datasheets.
What these drives lack compared Apparently, just like WD Gold and Ultraster 22 TB and 24 TB drives for enterprises and cloud datacenters, WD Red Pro HDDs fully support the ArmorCache feature that provides protection against power loss when write-cache is enabled (WCE mode) and enhances performance when write-cache is disabled (WCD mode).
On the reliability side of matters, Western Digital's Red Pro 24 TB HDDs are designed for 24/7 operation in vibrating environments, such as enterprise-grade NAS with loads of bays, and are rated for up to 550 TB/year workloads as well as up to 600,000 load/unload cycles, which is in line with what Western Digital's WD Gold and Ultrastar hard drives offer.
As for power consumption, the WD Red Pro 24 TB consumes up to 6.4W during read and write operations, up to 3.9W in idle mode, and up to 1.2W in standby/sleep mode.
Western Digital's Red Pro 24 TB (WD240KFGX) HDDs are now shipping to resellers as well as NAS makers, and are slated to be available shortly. Expect these hard drives to be slightly cheaper than the WD Gold 24 TB model.
StorageKioxia's booth at FMS 2024 was a busy one with multiple technology demonstrations keeping visitors occupied. A walk-through of the BiCS 8 manufacturing process was the first to grab my attention. Kioxia and Western Digital announced the sampling of BiCS 8 in March 2023. We had touched briefly upon its CMOS Bonded Array (CBA) scheme in our coverage of Kioxial's 2Tb QLC NAND device and coverage of Western Digital's 128 TB QLC enterprise SSD proof-of-concept demonstration. At Kioxia's booth, we got more insights.
Traditionally, fabrication of flash chips involved placement of the associate logic circuitry (CMOS process) around the periphery of the flash array. The process then moved on to putting the CMOS under the cell array, but the wafer development process was serialized with the CMOS logic getting fabricated first followed by the cell array on top. However, this has some challenges because the cell array requires a high-temperature processing step to ensure higher reliability that can be detrimental to the health of the CMOS logic. Thanks to recent advancements in wafer bonding techniques, the new CBA process allows the CMOS wafer and cell array wafer to be processed independently in parallel and then pieced together, as shown in the models above.
The BiCS 8 3D NAND incorporates 218 layers, compared to 112 layers in BiCS 5 and 162 layers in BiCS 6. The company decided to skip over BiCS 7 (or, rather, it was probably a short-lived generation meant as an internal test vehicle). The generation retains the four-plane charge trap structure of BiCS 6. In its TLC avatar, it is available as a 1 Tbit device. The QLC version is available in two capacities - 1 Tbit and 2 Tbit.
Kioxia also noted that while the number of layers (218) doesn't compare favorably with the latest layer counts from the competition, its lateral scaling / cell shrinkage has enabled it to be competitive in terms of bit density as well as operating speeds (3200 MT/s). For reference, the latest shipping NAND from Micron - the G9 - has 276 layers with a bit density in TLC mode of 21 Gbit/mm2, and operates at up to 3600 MT/s. However, its 232L NAND operates only up to 2400 MT/s and has a bit density of 14.6 Gbit/mm2.
It must be noted that the CBA hybrid bonding process has advantages over the current processes used by other vendors - including Micron's CMOS under array (CuA) and SK hynix's 4D PUC (periphery-under-chip) developed in the late 2010s. It is expected that other NAND vendors will also move eventually to some variant of the hybrid bonding scheme used by Kioxia.
StorageSK hynix early in Friday announced that the company has finished the development of it's PCB01 PCIe Gen5 SSD, the company's forthcoming high-end SSD for OEMs. Based on the company's new Alistar platform, the PCB01 is designed to deliver chart-topping performance for client machines. And, as a sign of the times, SK hynix is positioning the PCB01 for AI PCs, looking to synergize with the overall industry interest in anything and everything AI.
The bare, OEM-focused drives have previously been shown off by SK hynix, and make no attempt to hide what's under the hood. The PCB01 relies on SK hynix's Alistar controller, which features a PCIe Gen5 x4 host interface on the front end and eight NAND channels on the back end, placing it solidly in the realm of high-end SSDs. Paired with the Alistar controller is the company's latest 238-layer TLC NAND (H25T1TD48C & H25T2TD88C), which offers a maximum transfer speed of 2400 MT/second. Being that this is a high-end client SSD, there's also a DRAM chip on board, though the company isn't disclosing its capacity.
As with other high-end PCIe 5.0 client SSDs, SK hynix is planning on hitting peak read speeds of up to 14GB/second on the drive, while peak sequential write speeds should top 12GB/second (with pSLC caching, of course) – performance figures well within the realm of possibility for an 8 channel drive. As for random performance, at Computex the company was telling attendees that the drives should be able to sustain 4K random read and write rates of 2 million IOPS, which is very high as well. The SSDs are also said to consume up to 30% less power than 'predecessors,' according to SK hynix, though the company didn't elaborate on that figure. Typically in the storage industry, energy figures are based on iso-performance (rather than peak performance) – essentially measuring energy efficiency per bit rather than toal power consumption – and that is likely the case here as well.
At least initially, SK Hynix plans to release its PCB01 in three capacities – 512 GB, 1 TB, and 2 TB. The company has previously disclosed that their 238L TLC NAND has a capacity of 512Gbit, so these are typical capacity figures for single-sided drives. And while the focus of the company's press release this week was on OEM drives, this is the same controller and NAND that is also going into the company's previously-teased retail Platinum P51 SSD, so this week's reveal offers a bit more detail into what to expect from that drive family as well.
Specs aside, Ahn Hyun, the Head of the N-S Committee at SK hynix, said that multiple global CPU providers for on-device AI PCs are seeking collaboration for the compatibility validation process, which is underway, so expect PCB01 drives inside PCs in this back-to-school and holiday seasons.
"We will work towards enhancing our leadership as the global top AI memory provider also in the NAND solution space by successfully completing the customer validation and mass production of PCB01, which will be in the limelight," Ahn Hyun said.
SSDs
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