At FMS 2024, the technological requirements from the storage and memory subsystem took center stage. Both SSD and controller vendors had various demonstrations touting their suitability for different stages of the AI data pipeline - ingestion, preparation, training, checkpointing, and inference. Vendors like Solidigm have different types of SSDs optimized for different stages of the pipeline. At the same time, controller vendors have taken advantage of one of the features introduced recently in the NVM Express standard - Flexible Data Placement (FDP).
FDP involves the host providing information / hints about the areas where the controller could place the incoming write data in order to reduce the write amplification. These hints are generated based on specific block sizes advertised by the device. The feature is completely backwards-compatible, with non-FDP hosts working just as before with FDP-enabled SSDs, and vice-versa.
Silicon Motion's MonTitan Gen 5 Enterprise SSD Platform was announced back in 2022. Since then, Silicon Motion has been touting the flexibility of the platform, allowing its customers to incorporate their own features as part of the customization process. This approach is common in the enterprise space, as we have seen with Marvell's Bravera SC5 SSD controller in the DapuStor SSDs and Microchip's Flashtec controllers in the Longsys FORESEE enterprise SSDs.
At FMS 2024, the company was demonstrating the advantages of flexible data placement by allowing a single QLC SSD based on their MonTitan platform to take part in different stages of the AI data pipeline while maintaining the required quality of service (minimum bandwidth) for each process. The company even has a trademarked name (PerformaShape) for the firmware feature in the controller that allows the isolation of different concurrent SSD accesses (from different stages in the AI data pipeline) to guarantee this QoS. Silicon Motion claims that this scheme will enable its customers to get the maximum write performance possible from QLC SSDs without negatively impacting the performance of other types of accesses.
Silicon Motion and Phison have market leadership in the client SSD controller market with similar approaches. However, their enterprise SSD controller marketing couldn't be more different. While Phison has gone in for a turnkey solution with their Gen 5 SSD platform (to the extent of not adopting the white label route for this generation, and instead opting to get the SSDs qualified with different cloud service providers themselves), Silicon Motion is opting for a different approach. The flexibility and customization possibilities can make platforms like the MonTitan appeal to flash array vendors.
StorageKioxia's booth at FMS 2024 was a busy one with multiple technology demonstrations keeping visitors occupied. A walk-through of the BiCS 8 manufacturing process was the first to grab my attention. Kioxia and Western Digital announced the sampling of BiCS 8 in March 2023. We had touched briefly upon its CMOS Bonded Array (CBA) scheme in our coverage of Kioxial's 2Tb QLC NAND device and coverage of Western Digital's 128 TB QLC enterprise SSD proof-of-concept demonstration. At Kioxia's booth, we got more insights.
Traditionally, fabrication of flash chips involved placement of the associate logic circuitry (CMOS process) around the periphery of the flash array. The process then moved on to putting the CMOS under the cell array, but the wafer development process was serialized with the CMOS logic getting fabricated first followed by the cell array on top. However, this has some challenges because the cell array requires a high-temperature processing step to ensure higher reliability that can be detrimental to the health of the CMOS logic. Thanks to recent advancements in wafer bonding techniques, the new CBA process allows the CMOS wafer and cell array wafer to be processed independently in parallel and then pieced together, as shown in the models above.
The BiCS 8 3D NAND incorporates 218 layers, compared to 112 layers in BiCS 5 and 162 layers in BiCS 6. The company decided to skip over BiCS 7 (or, rather, it was probably a short-lived generation meant as an internal test vehicle). The generation retains the four-plane charge trap structure of BiCS 6. In its TLC avatar, it is available as a 1 Tbit device. The QLC version is available in two capacities - 1 Tbit and 2 Tbit.
Kioxia also noted that while the number of layers (218) doesn't compare favorably with the latest layer counts from the competition, its lateral scaling / cell shrinkage has enabled it to be competitive in terms of bit density as well as operating speeds (3200 MT/s). For reference, the latest shipping NAND from Micron - the G9 - has 276 layers with a bit density in TLC mode of 21 Gbit/mm2, and operates at up to 3600 MT/s. However, its 232L NAND operates only up to 2400 MT/s and has a bit density of 14.6 Gbit/mm2.
It must be noted that the CBA hybrid bonding process has advantages over the current processes used by other vendors - including Micron's CMOS under array (CuA) and SK hynix's 4D PUC (periphery-under-chip) developed in the late 2010s. It is expected that other NAND vendors will also move eventually to some variant of the hybrid bonding scheme used by Kioxia.
StorageHighPoint Technologies has updated their NVMe switch and RAID solutions with PCIe 5.0, and supporting up to eight NVMe drives. The new HighPoint Rocket 1600 (switch add-in card) and 7600 series (RAID adapters) are the successors to the SSD SSD7500 series adapter cards introduced in 2020. Similar to its predecessors, the new Rocket series cards are also based on a Broadcom PCIe switch (PEX 89048). The Rocket 7600 series runs the RAID stack on the integrated ARM processor (dual-core Cortex A15)
The PEX 89048 supports up to 48 PCIe 5.0 lanes, out of which 16 are dedicated to the host connection in the Rocket adapters. The use of a true PCIe switch means that the product doesn't rely on PCIe lane bifurcation support in the host platform.
HighPoint's Gen 5 stack currently has two products each in the switch and RAID lineups - an add-in card with support for M.2 drives, and a RAID adapter with four 5.0 x8 SFF-TA-1016 (Mini Cool Edge IO or MCIO) connectors for use with backplanes / setups involving U.2 / U.3 / EDSFF drives.
The RAID adapters require HighPoint's drivers (available for Linux, macOS, and Windows), and supports RAID 0, RAID 1, and RAID 10 arrays. On the other hand, the AIC requires no custom drivers. RAID configurations with the AIC will need to be handled by software running on the host OS. On the hardware side, all members of the Rocket series come with an external power connector (as the solution can consume upwards of 75W) and integrate a heatsink. The M.2 version is actively cooled, as the drives are housed within the full-height / full-length cards.
The solution can theoretically support up to 64 GBps of throughput, but real-world performance is limited to around 56 GBps using Gen 5 drives. It must be noted that even Gen 4 drives can take advantage of the new platform and deliver better performance with the new Rocket series compared to the older SSD7500 series.
The cards are shipping now, with pricing ranging from $1500 (add-in card) to $2000 (RAID adapters). HighPoint is not alone in targeting this HEDT / workstation market. Sabrent has been teasing their Apex Gen 5.0 x16 solution involving eight M.2 SSDs for a few months now (involving a Microchip PCIe switch. Until that solution comes to the market, HighPoint appears to be the only game in town for workstation users requiring access to direct-attached storage capable of delivering 50 GBps+ speeds.
SSDsKioxia's booth at FMS 2024 was a busy one with multiple technology demonstrations keeping visitors occupied. A walk-through of the BiCS 8 manufacturing process was the first to grab my attention. Kioxia and Western Digital announced the sampling of BiCS 8 in March 2023. We had touched briefly upon its CMOS Bonded Array (CBA) scheme in our coverage of Kioxial's 2Tb QLC NAND device and coverage of Western Digital's 128 TB QLC enterprise SSD proof-of-concept demonstration. At Kioxia's booth, we got more insights.
Traditionally, fabrication of flash chips involved placement of the associate logic circuitry (CMOS process) around the periphery of the flash array. The process then moved on to putting the CMOS under the cell array, but the wafer development process was serialized with the CMOS logic getting fabricated first followed by the cell array on top. However, this has some challenges because the cell array requires a high-temperature processing step to ensure higher reliability that can be detrimental to the health of the CMOS logic. Thanks to recent advancements in wafer bonding techniques, the new CBA process allows the CMOS wafer and cell array wafer to be processed independently in parallel and then pieced together, as shown in the models above.
The BiCS 8 3D NAND incorporates 218 layers, compared to 112 layers in BiCS 5 and 162 layers in BiCS 6. The company decided to skip over BiCS 7 (or, rather, it was probably a short-lived generation meant as an internal test vehicle). The generation retains the four-plane charge trap structure of BiCS 6. In its TLC avatar, it is available as a 1 Tbit device. The QLC version is available in two capacities - 1 Tbit and 2 Tbit.
Kioxia also noted that while the number of layers (218) doesn't compare favorably with the latest layer counts from the competition, its lateral scaling / cell shrinkage has enabled it to be competitive in terms of bit density as well as operating speeds (3200 MT/s). For reference, the latest shipping NAND from Micron - the G9 - has 276 layers with a bit density in TLC mode of 21 Gbit/mm2, and operates at up to 3600 MT/s. However, its 232L NAND operates only up to 2400 MT/s and has a bit density of 14.6 Gbit/mm2.
It must be noted that the CBA hybrid bonding process has advantages over the current processes used by other vendors - including Micron's CMOS under array (CuA) and SK hynix's 4D PUC (periphery-under-chip) developed in the late 2010s. It is expected that other NAND vendors will also move eventually to some variant of the hybrid bonding scheme used by Kioxia.
StorageHighPoint Technologies has updated their NVMe switch and RAID solutions with PCIe 5.0, and supporting up to eight NVMe drives. The new HighPoint Rocket 1600 (switch add-in card) and 7600 series (RAID adapters) are the successors to the SSD SSD7500 series adapter cards introduced in 2020. Similar to its predecessors, the new Rocket series cards are also based on a Broadcom PCIe switch (PEX 89048). The Rocket 7600 series runs the RAID stack on the integrated ARM processor (dual-core Cortex A15)
The PEX 89048 supports up to 48 PCIe 5.0 lanes, out of which 16 are dedicated to the host connection in the Rocket adapters. The use of a true PCIe switch means that the product doesn't rely on PCIe lane bifurcation support in the host platform.
HighPoint's Gen 5 stack currently has two products each in the switch and RAID lineups - an add-in card with support for M.2 drives, and a RAID adapter with four 5.0 x8 SFF-TA-1016 (Mini Cool Edge IO or MCIO) connectors for use with backplanes / setups involving U.2 / U.3 / EDSFF drives.
The RAID adapters require HighPoint's drivers (available for Linux, macOS, and Windows), and supports RAID 0, RAID 1, and RAID 10 arrays. On the other hand, the AIC requires no custom drivers. RAID configurations with the AIC will need to be handled by software running on the host OS. On the hardware side, all members of the Rocket series come with an external power connector (as the solution can consume upwards of 75W) and integrate a heatsink. The M.2 version is actively cooled, as the drives are housed within the full-height / full-length cards.
The solution can theoretically support up to 64 GBps of throughput, but real-world performance is limited to around 56 GBps using Gen 5 drives. It must be noted that even Gen 4 drives can take advantage of the new platform and deliver better performance with the new Rocket series compared to the older SSD7500 series.
The cards are shipping now, with pricing ranging from $1500 (add-in card) to $2000 (RAID adapters). HighPoint is not alone in targeting this HEDT / workstation market. Sabrent has been teasing their Apex Gen 5.0 x16 solution involving eight M.2 SSDs for a few months now (involving a Microchip PCIe switch. Until that solution comes to the market, HighPoint appears to be the only game in town for workstation users requiring access to direct-attached storage capable of delivering 50 GBps+ speeds.
SSDsIn addition to revealing its roadmap and plans concerning its current leading-edge process technologies, TSMC also shared progress of its N2 node as part of its Symposiums 2024. The company's first 2nm-class fabrication node, and predominantly featuring gate-all-around transistors, according to TSMC N2 has almost achieved its target performance and yield goals, which places it on track to enter high-volume manufacturing in the second half of 2025.
TSMC states that 'N2 development is well on track and N2P is next.' In particular, gate-all-around nanosheet devices currently achieve over 90% of their expected performance, whereas yields of 256 Mb SRAM (32 MB) devices already exceeds 80%, depending on the batch. All of this for a node that is over a year away from mass production.
Meanwhile, average yield of a 256 Mb SRAM was around 70% as of March, 2024, up from around 35% in April, 2023. Device performance has also been improving with higher frequencies being achieved while keeping power consumption in check.
Chip designer interest towards TSMC's first 2nm-class gate-all-around nanosheet transistor-based technology is significant, too. The number of new tape-outs (NTOs) in the first year of N2 is over two-times higher than it was for N5. Though with that said, given TSMC's close working relationship with a handful of high-volume vendors – most notably Appe – NTOs can be a very misleading figure since the first year of a new node at TSMC is capacity constrained, and consequently the bulk of that capacity goes to TSMC's priority partners.
Meanwhile, there were considerably more N5 tapeouts in its second year (some where N5P, of course) and N2 promises to have 2.6X more NTOs in its second year. So the node indeed looks quite promising. In fact, based on TSMC's slides (which we're unfortunately not able to republish), N2 is more popular than N3 in terms of NTOs both in the first and the second years of existence.
When it comes to the second year of N2, in the second half of 2026 TSMC plans to roll out its N2P technology, which promises additional performance and power benefits. N2P is expected to improve frequency by 15% - 20%, reduce power consumption by 30% - 40%, and increase chip density by over 1.15 times compared to N3E, significant benefits to move to all-new GAA nanosheet transistors.
Finally, for those companies that need the best in performance, power, and density, TSMC is poised to offer their A16 process in 2026. That node will also bring in backside power delivery, which will add costs, but is expected to greatly improve performance efficiency and scaling.
SemiconductorsWhen Western Digital introduced its Ultrastar DC SN861 SSDs earlier this year, the company did not disclose which controller it used for these drives, which made many observers presume that WD was using an in-house controller. But a recent teardown of the drive shows that is not the case; instead, the company is using a controller from Fadu, a South Korean company founded in 2015 that specializes on enterprise-grade turnkey SSD solutions.
The Western Digital Ultrastar DC SN861 SSD is aimed at performance-hungry hyperscale datacenters and enterprise customers which are adopting PCIe Gen5 storage devices these days. And, as uncovered in photos from a recent Storage Review article, the drive is based on Fadu's FC5161 NVMe 2.0-compliant controller. The FC5161 utilizes 16 NAND channels supporting an ONFi 5.0 2400 MT/s interface, and features a combination of enterprise-grade capabilities (OCP Cloud Spec 2.0, SR-IOV, up to 512 name spaces for ZNS support, flexible data placement, NVMe-MI 1.2, advanced security, telemetry, power loss protection) not available on other off-the-shelf controllers – or on any previous Western Digital controllers.
The Ultrastar DC SN861 SSD offers sequential read speeds up to 13.7 GB/s as well as sequential write speeds up to 7.5 GB/s. As for random performance, it boasts with an up to 3.3 million random 4K read IOPS and up to 0.8 million random 4K write IOPS. The drives are available in capacities between 1.6 TB and 7.68 TB with one or three drive writes per day (DWPD) over five years rating as well as in U.2 and E1.S form-factors.
While the two form factors of the SN861 share a similar technical design, Western Digital has tailored each version for distinct workloads: the E1.S supports FDP and performance enhancements specifically for cloud environments. By contrast, the U.2 model is geared towards high-performance enterprise tasks and emerging applications like AI.
Without any doubts, Western Digital's Ultrastar DC SN861 is a feature-rich high-performance enterprise-grade SSD. It has another distinctive feature: a 5W idle power consumption, which is rather low by the standards of enterprise-grade drives (e.g., it is 1W lower compared to the SN840). While the difference with predecessors may be just 1W, hyperscalers deploy thousands of drives and for their TCO every watt counts.
Western Digital's Ultrastar DC SN861 SSDs are now available for purchase to select customers (such as Meta) and to interested parties. Prices are unknown, but they will depend on such factors as volumes.
Sources: Fadu, Storage Review
StorageKioxia's booth at FMS 2024 was a busy one with multiple technology demonstrations keeping visitors occupied. A walk-through of the BiCS 8 manufacturing process was the first to grab my attention. Kioxia and Western Digital announced the sampling of BiCS 8 in March 2023. We had touched briefly upon its CMOS Bonded Array (CBA) scheme in our coverage of Kioxial's 2Tb QLC NAND device and coverage of Western Digital's 128 TB QLC enterprise SSD proof-of-concept demonstration. At Kioxia's booth, we got more insights.
Traditionally, fabrication of flash chips involved placement of the associate logic circuitry (CMOS process) around the periphery of the flash array. The process then moved on to putting the CMOS under the cell array, but the wafer development process was serialized with the CMOS logic getting fabricated first followed by the cell array on top. However, this has some challenges because the cell array requires a high-temperature processing step to ensure higher reliability that can be detrimental to the health of the CMOS logic. Thanks to recent advancements in wafer bonding techniques, the new CBA process allows the CMOS wafer and cell array wafer to be processed independently in parallel and then pieced together, as shown in the models above.
The BiCS 8 3D NAND incorporates 218 layers, compared to 112 layers in BiCS 5 and 162 layers in BiCS 6. The company decided to skip over BiCS 7 (or, rather, it was probably a short-lived generation meant as an internal test vehicle). The generation retains the four-plane charge trap structure of BiCS 6. In its TLC avatar, it is available as a 1 Tbit device. The QLC version is available in two capacities - 1 Tbit and 2 Tbit.
Kioxia also noted that while the number of layers (218) doesn't compare favorably with the latest layer counts from the competition, its lateral scaling / cell shrinkage has enabled it to be competitive in terms of bit density as well as operating speeds (3200 MT/s). For reference, the latest shipping NAND from Micron - the G9 - has 276 layers with a bit density in TLC mode of 21 Gbit/mm2, and operates at up to 3600 MT/s. However, its 232L NAND operates only up to 2400 MT/s and has a bit density of 14.6 Gbit/mm2.
It must be noted that the CBA hybrid bonding process has advantages over the current processes used by other vendors - including Micron's CMOS under array (CuA) and SK hynix's 4D PUC (periphery-under-chip) developed in the late 2010s. It is expected that other NAND vendors will also move eventually to some variant of the hybrid bonding scheme used by Kioxia.
StorageAs LPCAMM2 adoption begins, the first retail memory modules are finally starting to hit the retail market, courtesy of Micron. The memory manufacturer has begun selling their LPDDR5X-based LPCAMM2 memory modules under their in-house Crucial brand, making them available on the latter's storefront. Timed to coincide with the release of Lenovo's ThinkPad P1 Gen 7 laptop – the first retail laptop designed to use the memory modules – this marks the de facto start of the eagerly-awaited modular LPDDR5X memory era.
Micron's Low Power Compression Attached Memory Module 2 (LPCAMM2) modules are available in capacities of 32 GB and 64 GB. These are dual-channel modules that feature a 128-bit wide interface, and are based around LPDDR5X memory running at data rates up to 7500 MT/s. This gives a single LPCAMM2 a peak bandwidth of 120 GB/s. Micron is not disclosing the latencies of its LPCAMM2 memory modules, but it says that high data transfer rates of LPDDR5X compensate for the extended timings.
Micron says that LPDDR5X memory offers significantly lower power consumption, with active power per 64-bit bus being 43-58% lower than DDR5 at the same speed, and standby power up to 80% lower. Meanwhile, similar to DDR5 modules, LPCAMM2 modules include a power management IC and voltage regulating circuitry, which provides module manufacturers additional opportunities to reduce power consumption of their products.

Source: Micron LPDDR5X LPCAMM2 Technical Brief
It's worth noting, however, that at least for the first generation of LPCAMM2 modules, system vendors will need to pick between modularity and performance. While soldered-down LPDDR5X memory is available at speeds up to 8533 MT/sec – and with 9600 MT/sec on the horizon – the fastest LPCAMM2 modules planned for this year by both Micron and rival Samsung will be running at 7500 MT/sec. So vendors will have to choose between the flexibility of offering modular LPDDR5X, or the higher bandwidth (and space savings) offered by soldering down their memory.
Micron, for its part, is projecting that 9600 MT/sec LPCAMM2 modules will be available by 2026. Though it's all but certain that faster memory will also be avaialble in the same timeframe.
Micron's Crucial LPDDR5X 32 GB module costs $174.99, whereas a 64 GB module costs $329.99.
MemoryKioxia's booth at FMS 2024 was a busy one with multiple technology demonstrations keeping visitors occupied. A walk-through of the BiCS 8 manufacturing process was the first to grab my attention. Kioxia and Western Digital announced the sampling of BiCS 8 in March 2023. We had touched briefly upon its CMOS Bonded Array (CBA) scheme in our coverage of Kioxial's 2Tb QLC NAND device and coverage of Western Digital's 128 TB QLC enterprise SSD proof-of-concept demonstration. At Kioxia's booth, we got more insights.
Traditionally, fabrication of flash chips involved placement of the associate logic circuitry (CMOS process) around the periphery of the flash array. The process then moved on to putting the CMOS under the cell array, but the wafer development process was serialized with the CMOS logic getting fabricated first followed by the cell array on top. However, this has some challenges because the cell array requires a high-temperature processing step to ensure higher reliability that can be detrimental to the health of the CMOS logic. Thanks to recent advancements in wafer bonding techniques, the new CBA process allows the CMOS wafer and cell array wafer to be processed independently in parallel and then pieced together, as shown in the models above.
The BiCS 8 3D NAND incorporates 218 layers, compared to 112 layers in BiCS 5 and 162 layers in BiCS 6. The company decided to skip over BiCS 7 (or, rather, it was probably a short-lived generation meant as an internal test vehicle). The generation retains the four-plane charge trap structure of BiCS 6. In its TLC avatar, it is available as a 1 Tbit device. The QLC version is available in two capacities - 1 Tbit and 2 Tbit.
Kioxia also noted that while the number of layers (218) doesn't compare favorably with the latest layer counts from the competition, its lateral scaling / cell shrinkage has enabled it to be competitive in terms of bit density as well as operating speeds (3200 MT/s). For reference, the latest shipping NAND from Micron - the G9 - has 276 layers with a bit density in TLC mode of 21 Gbit/mm2, and operates at up to 3600 MT/s. However, its 232L NAND operates only up to 2400 MT/s and has a bit density of 14.6 Gbit/mm2.
It must be noted that the CBA hybrid bonding process has advantages over the current processes used by other vendors - including Micron's CMOS under array (CuA) and SK hynix's 4D PUC (periphery-under-chip) developed in the late 2010s. It is expected that other NAND vendors will also move eventually to some variant of the hybrid bonding scheme used by Kioxia.
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