Samsung's 128 TB-Class BM1743 Enterprise SSD Displayed at FMS 2024
Samsung had quietly launched its BM1743 enterprise QLC SSD last month with a hefty 61.44 TB SKU. At FMS 2024, the company had the even larger 122.88 TB version of that SSD on display, alongside a few recorded benchmarking sessions. Compared to the previous generation, the BM1743 comes with a 4.1x improvement in I/O performance, improvement in data retention, and a 45% improvement in power efficiency for sequential writes.
The 128 TB-class QLC SSD boasts of sequential read speeds of 7.5 GBps and write speeds of 3 GBps. Random reads come in at 1.6 M IOPS, while 16 KB random writes clock in at 45K IOPS. Based on the quoted random write access granularity, it appears that Samsung is using a 16 KB indirection unit (IU) to optimize flash management. This is similar to the strategy adopted by Solidigm with IUs larger than 4K in their high-capacity SSDs.
A recorded benchmark session on the company's PM9D3a 8-channel Gen 5 SSD was also on display.
The SSD family is being promoted as a mainstream option for datacenters, and boasts of sequential reads up to 12 GBps and writes up to 6.8 GBps. Random reads clock in at 2 M IOPS, and random writes at 400 K IOPS.
Available in multiple form-factors up to 32 TB (M.2 tops out at 2 TB), the drive's firmware includes optional support for flexible data placement (FDP) to help address the write amplification aspect.
The PM1753 is the current enterprise SSD flagship in Samsung's lineup. With support for 16 NAND channels and capacities up to 32 TB, this U.2 / E3.S SSD has advertised sequential read and write speeds of 14.8 GBps and 11 GBps respectively. Random reads and writes for 4 KB accesses are listed at 3.4 M and 600 K IOPS.
Samsung claims a 1.7x performance improvement and a 1.7x power efficiency improvement over the previous generation (PM1743), making this TLC SSD suitable for AI servers.
The 9th Gen. V-NAND wafer was also available for viewing, though photography was prohibited. Mass production of this flash memory began in April 2024.
Storage
Posted by The Techinical Support
ASMedia Preps USB4 v2 Controller and PHY 
The USB Implementers Forum (USB-IF) introduced USB4 version 2.0 in fall 2022, and it expects systems and devices with the tech to emerge later this year and into next year. These upcoming products will largely rely on Intel's Barlow Ridge controller, a full-featured Thunderbolt 5 controller that goes above and beond the baseline USB4 v2 spec. And though extremely capable, Intel's Thunderbolt controllers are also quite expensive, and Barlow Ridge isn't expected to be any different. Fortunately, for system and device vendors that just need a basic USB4 v2 solution, ASMedia is also working on its own USB4 v2 controller.
At Computex 2024, ASMedia demonstrated a prototype of its upcoming USB4 v2 physical interface (PHY), which will support USB4 v2's new Gen 4 (160Gbps) data rates and the associated PAM-3 signal encoding. The prototype was implemented using an FPGA, as the company yet has to tape out the completed controller.
Ultimately, the purpose of showing off a FPGA-based PHY at Computex was to allow ASMedia to demonstrate their current PHY design. With the shift to PAM-3 encoding for USB4 v2, ASMedia (and the rest of the USB ecosystem) must develop significantly more complex controllers – and there's no part of that more critical than a solid and reliable PHY design.
As part of their demonstration, ASMedia had a classic eye diagram display. The eye diagram demoed has a clear opening in the center, which is indicative of good signal integrity, as the larger the eye opening, the less distortion and noise in the signal. The horizontal width of the eye opening represents the time window in which the signal can be sampled correctly, so the relatively narrow horizontal spread of the eye opening suggests that there is minimal jitter, meaning the signal transitions are consistent and predictable. Finally, the vertical height of the eye opening indicates the signal amplitude and the rather tall eye opening suggests a higher signal-to-noise ratio (SNR), meaning that the signal is strong compared to any noise present.
ASMedia itself is one of the major suppliers for discrete USB controllers, so the availability of ASMedia's USB4 v2 chip is crucial for adoption of the standard in general. While Intel will spearhead the industry with their Barlow Ridge Thunderbolt 5/USB4 v2 controller, ASMedia's controller is poised to end up in a far larger range of devices. So the importance of the company's USB4 v2 PHY demo is hard to overstate.
Demos aside, ASMedia is hoping to tape the chip out soon. If all goes well, the company expects their first USB4 v2 controllers to hit the market some time in the second half of 2025.
Peripherals
ASMedia Preps USB4 v2 Controller and PHY
The USB Implementers Forum (USB-IF) introduced USB4 version 2.0 in fall 2022, and it expects systems and devices with the tech to emerge later this year and into next year. These upcoming products will largely rely on Intel's Barlow Ridge controller, a full-featured Thunderbolt 5 controller that goes above and beond the baseline USB4 v2 spec. And though extremely capable, Intel's Thunderbolt controllers are also quite expensive, and Barlow Ridge isn't expected to be any different. Fortunately, for system and device vendors that just need a basic USB4 v2 solution, ASMedia is also working on its own USB4 v2 controller.
At Computex 2024, ASMedia demonstrated a prototype of its upcoming USB4 v2 physical interface (PHY), which will support USB4 v2's new Gen 4 (160Gbps) data rates and the associated PAM-3 signal encoding. The prototype was implemented using an FPGA, as the company yet has to tape out the completed controller.
Ultimately, the purpose of showing off a FPGA-based PHY at Computex was to allow ASMedia to demonstrate their current PHY design. With the shift to PAM-3 encoding for USB4 v2, ASMedia (and the rest of the USB ecosystem) must develop significantly more complex controllers – and there's no part of that more critical than a solid and reliable PHY design.
As part of their demonstration, ASMedia had a classic eye diagram display. The eye diagram demoed has a clear opening in the center, which is indicative of good signal integrity, as the larger the eye opening, the less distortion and noise in the signal. The horizontal width of the eye opening represents the time window in which the signal can be sampled correctly, so the relatively narrow horizontal spread of the eye opening suggests that there is minimal jitter, meaning the signal transitions are consistent and predictable. Finally, the vertical height of the eye opening indicates the signal amplitude and the rather tall eye opening suggests a higher signal-to-noise ratio (SNR), meaning that the signal is strong compared to any noise present.
ASMedia itself is one of the major suppliers for discrete USB controllers, so the availability of ASMedia's USB4 v2 chip is crucial for adoption of the standard in general. While Intel will spearhead the industry with their Barlow Ridge Thunderbolt 5/USB4 v2 controller, ASMedia's controller is poised to end up in a far larger range of devices. So the importance of the company's USB4 v2 PHY demo is hard to overstate.
Demos aside, ASMedia is hoping to tape the chip out soon. If all goes well, the company expects their first USB4 v2 controllers to hit the market some time in the second half of 2025.
Peripherals
Micron Ships Crucial-Branded LPCAMM2 Memory Modules: 64GB of LPDDR5X For $330 
As LPCAMM2 adoption begins, the first retail memory modules are finally starting to hit the retail market, courtesy of Micron. The memory manufacturer has begun selling their LPDDR5X-based LPCAMM2 memory modules under their in-house Crucial brand, making them available on the latter's storefront. Timed to coincide with the release of Lenovo's ThinkPad P1 Gen 7 laptop – the first retail laptop designed to use the memory modules – this marks the de facto start of the eagerly-awaited modular LPDDR5X memory era.
Micron's Low Power Compression Attached Memory Module 2 (LPCAMM2) modules are available in capacities of 32 GB and 64 GB. These are dual-channel modules that feature a 128-bit wide interface, and are based around LPDDR5X memory running at data rates up to 7500 MT/s. This gives a single LPCAMM2 a peak bandwidth of 120 GB/s. Micron is not disclosing the latencies of its LPCAMM2 memory modules, but it says that high data transfer rates of LPDDR5X compensate for the extended timings.
Micron says that LPDDR5X memory offers significantly lower power consumption, with active power per 64-bit bus being 43-58% lower than DDR5 at the same speed, and standby power up to 80% lower. Meanwhile, similar to DDR5 modules, LPCAMM2 modules include a power management IC and voltage regulating circuitry, which provides module manufacturers additional opportunities to reduce power consumption of their products.
Source: Micron LPDDR5X LPCAMM2 Technical Brief
It's worth noting, however, that at least for the first generation of LPCAMM2 modules, system vendors will need to pick between modularity and performance. While soldered-down LPDDR5X memory is available at speeds up to 8533 MT/sec – and with 9600 MT/sec on the horizon – the fastest LPCAMM2 modules planned for this year by both Micron and rival Samsung will be running at 7500 MT/sec. So vendors will have to choose between the flexibility of offering modular LPDDR5X, or the higher bandwidth (and space savings) offered by soldering down their memory.
Micron, for its part, is projecting that 9600 MT/sec LPCAMM2 modules will be available by 2026. Though it's all but certain that faster memory will also be avaialble in the same timeframe.
Micron's Crucial LPDDR5X 32 GB module costs $174.99, whereas a 64 GB module costs $329.99.
Memory
Source: Micron LPDDR5X LPCAMM2 Technical Brief
![](https://twitter.com/share?url=https://compbuddey.blogspot.com/2025/02/samsungs-128-tb-class-bm1743-enterprise_10.html&text=Samsung's 128 TB-Class BM1743 Enterprise SSD Displayed at FMS 2024 <p align="center"><a href="https://www.anandtech.com/show/21526/samsungs-128-tbclass-bm1743-enterprise-ssd-displayed-at-fms-2024"><img src="https://images.anandtech.com/doci/21526/for-carousel_575px.jpg" alt="" /></a></p><p><p>Samsung had <a href="https://www.anandtech.com/show/21465">quietly launched</a> its BM1743 enterprise QLC SSD last month with a hefty 61.44 TB SKU. At FMS 2024, the company had the even larger 122.88 TB version of that SSD on display, alongside a few recorded benchmarking sessions. Compared to the previous generation, the BM1743 comes with a 4.1x improvement in I/O performance, improvement in data retention, and a 45% improvement in power efficiency for sequential writes.</p>
<p align="center"><a href="https://www.anandtech.com/show/21526/samsungs-128-tbclass-bm1743-enterprise-ssd-displayed-at-fms-2024"><img alt="" src="https://images.anandtech.com/doci/21526/bm1743-perf_575px.jpg" /></a></p>
<p>The 128 TB-class QLC SSD boasts of sequential read speeds of 7.5 GBps and write speeds of 3 GBps. Random reads come in at 1.6 M IOPS, while 16 KB random writes clock in at 45K IOPS. Based on the quoted random write access granularity, it appears that Samsung is using a 16 KB indirection unit (IU) to optimize flash management. This is similar to the strategy adopted by Solidigm with IUs larger than 4K in their high-capacity SSDs.</p>
<p>A recorded benchmark session on the company's PM9D3a 8-channel Gen 5 SSD was also on display.</p>
<p align="center"><a href="https://www.anandtech.com/show/21526/samsungs-128-tbclass-bm1743-enterprise-ssd-displayed-at-fms-2024"><img alt="" src="https://images.anandtech.com/doci/21526/pm9d3a_575px.jpg" /></a></p>
<p>The SSD family is being promoted as a mainstream option for datacenters, and boasts of sequential reads up to 12 GBps and writes up to 6.8 GBps. Random reads clock in at 2 M IOPS, and random writes at 400 K IOPS.</p>
<p align="center"><a href="https://www.anandtech.com/show/21526/samsungs-128-tbclass-bm1743-enterprise-ssd-displayed-at-fms-2024"><img alt="" src="https://images.anandtech.com/doci/21526/pm9d3a-ff_575px.jpg" /></a></p>
<p>Available in multiple form-factors up to 32 TB (M.2 tops out at 2 TB), the drive's firmware includes optional support for flexible data placement (FDP) to help address the write amplification aspect.</p>
<p>The PM1753 is the current enterprise SSD flagship in Samsung's lineup. With support for 16 NAND channels and capacities up to 32 TB, this U.2 / E3.S SSD has advertised sequential read and write speeds of 14.8 GBps and 11 GBps respectively. Random reads and writes for 4 KB accesses are listed at 3.4 M and 600 K IOPS.</p>
<p align="center"><a href="https://www.anandtech.com/show/21526/samsungs-128-tbclass-bm1743-enterprise-ssd-displayed-at-fms-2024"><img alt="" src="https://images.anandtech.com/doci/21526/pm1753-det_575px.jpg" /></a></p>
<p>Samsung claims a 1.7x performance improvement and a 1.7x power efficiency improvement over the previous generation (PM1743), making this TLC SSD suitable for AI servers.</p>
<p>The 9<sup>th</sup> Gen. V-NAND wafer was also available for viewing, though photography was prohibited. Mass production of this flash memory began in <a href="https://semiconductor.samsung.com/news-events/news/samsung-electronics-begins-industrys-first-mass-production-of-9th-gen-v-nand/">April 2024</a>.</p>
</p> Storage){kind=link}
![](https://www.pinterest.com/pin/create/button/?url=https://compbuddey.blogspot.com/2025/02/samsungs-128-tb-class-bm1743-enterprise_10.html&media=https://lh3.googleusercontent.com/blogger_img_proxy/AEn0k_sDKzHkausV5Rhrg4q7frqs1IQlAos6ii9K71HCgGT5Zl4UUjT8h7rfmrNopUSf-9JKy_JelTg7ZtmIv-5YbcWQc__lQGkWrgZaFAJz1te8F8ZjRmP7Q-4-t5A4PNxcZO8D&description=Samsung's 128 TB-Class BM1743 Enterprise SSD Displayed at FMS 2024 <p align="center"><a href="https://www.anandtech.com/show/21526/samsungs-128-tbclass-bm1743-enterprise-ssd-displayed-at-fms-2024"><img src="https://images.anandtech.com/doci/21526/for-carousel_575px.jpg" alt="" /></a></p><p><p>Samsung had <a href="https://www.anandtech.com/show/21465">quietly launched</a> its BM1743 enterprise QLC SSD last month with a hefty 61.44 TB SKU. At FMS 2024, the company had the even larger 122.88 TB version of that SSD on display, alongside a few recorded benchmarking sessions. Compared to the previous generation, the BM1743 comes with a 4.1x improvement in I/O performance, improvement in data retention, and a 45% improvement in power efficiency for sequential writes.</p>
<p align="center"><a href="https://www.anandtech.com/show/21526/samsungs-128-tbclass-bm1743-enterprise-ssd-displayed-at-fms-2024"><img alt="" src="https://images.anandtech.com/doci/21526/bm1743-perf_575px.jpg" /></a></p>
<p>The 128 TB-class QLC SSD boasts of sequential read speeds of 7.5 GBps and write speeds of 3 GBps. Random reads come in at 1.6 M IOPS, while 16 KB random writes clock in at 45K IOPS. Based on the quoted random write access granularity, it appears that Samsung is using a 16 KB indirection unit (IU) to optimize flash management. This is similar to the strategy adopted by Solidigm with IUs larger than 4K in their high-capacity SSDs.</p>
<p>A recorded benchmark session on the company's PM9D3a 8-channel Gen 5 SSD was also on display.</p>
<p align="center"><a href="https://www.anandtech.com/show/21526/samsungs-128-tbclass-bm1743-enterprise-ssd-displayed-at-fms-2024"><img alt="" src="https://images.anandtech.com/doci/21526/pm9d3a_575px.jpg" /></a></p>
<p>The SSD family is being promoted as a mainstream option for datacenters, and boasts of sequential reads up to 12 GBps and writes up to 6.8 GBps. Random reads clock in at 2 M IOPS, and random writes at 400 K IOPS.</p>
<p align="center"><a href="https://www.anandtech.com/show/21526/samsungs-128-tbclass-bm1743-enterprise-ssd-displayed-at-fms-2024"><img alt="" src="https://images.anandtech.com/doci/21526/pm9d3a-ff_575px.jpg" /></a></p>
<p>Available in multiple form-factors up to 32 TB (M.2 tops out at 2 TB), the drive's firmware includes optional support for flexible data placement (FDP) to help address the write amplification aspect.</p>
<p>The PM1753 is the current enterprise SSD flagship in Samsung's lineup. With support for 16 NAND channels and capacities up to 32 TB, this U.2 / E3.S SSD has advertised sequential read and write speeds of 14.8 GBps and 11 GBps respectively. Random reads and writes for 4 KB accesses are listed at 3.4 M and 600 K IOPS.</p>
<p align="center"><a href="https://www.anandtech.com/show/21526/samsungs-128-tbclass-bm1743-enterprise-ssd-displayed-at-fms-2024"><img alt="" src="https://images.anandtech.com/doci/21526/pm1753-det_575px.jpg" /></a></p>
<p>Samsung claims a 1.7x performance improvement and a 1.7x power efficiency improvement over the previous generation (PM1743), making this TLC SSD suitable for AI servers.</p>
<p>The 9<sup>th</sup> Gen. V-NAND wafer was also available for viewing, though photography was prohibited. Mass production of this flash memory began in <a href="https://semiconductor.samsung.com/news-events/news/samsung-electronics-begins-industrys-first-mass-production-of-9th-gen-v-nand/">April 2024</a>.</p>
</p> Storage){kind=link}
![](https://web.whatsapp.com/send?text=Samsung's 128 TB-Class BM1743 Enterprise SSD Displayed at FMS 2024 <p align="center"><a href="https://www.anandtech.com/show/21526/samsungs-128-tbclass-bm1743-enterprise-ssd-displayed-at-fms-2024"><img src="https://images.anandtech.com/doci/21526/for-carousel_575px.jpg" alt="" /></a></p><p><p>Samsung had <a href="https://www.anandtech.com/show/21465">quietly launched</a> its BM1743 enterprise QLC SSD last month with a hefty 61.44 TB SKU. At FMS 2024, the company had the even larger 122.88 TB version of that SSD on display, alongside a few recorded benchmarking sessions. Compared to the previous generation, the BM1743 comes with a 4.1x improvement in I/O performance, improvement in data retention, and a 45% improvement in power efficiency for sequential writes.</p>
<p align="center"><a href="https://www.anandtech.com/show/21526/samsungs-128-tbclass-bm1743-enterprise-ssd-displayed-at-fms-2024"><img alt="" src="https://images.anandtech.com/doci/21526/bm1743-perf_575px.jpg" /></a></p>
<p>The 128 TB-class QLC SSD boasts of sequential read speeds of 7.5 GBps and write speeds of 3 GBps. Random reads come in at 1.6 M IOPS, while 16 KB random writes clock in at 45K IOPS. Based on the quoted random write access granularity, it appears that Samsung is using a 16 KB indirection unit (IU) to optimize flash management. This is similar to the strategy adopted by Solidigm with IUs larger than 4K in their high-capacity SSDs.</p>
<p>A recorded benchmark session on the company's PM9D3a 8-channel Gen 5 SSD was also on display.</p>
<p align="center"><a href="https://www.anandtech.com/show/21526/samsungs-128-tbclass-bm1743-enterprise-ssd-displayed-at-fms-2024"><img alt="" src="https://images.anandtech.com/doci/21526/pm9d3a_575px.jpg" /></a></p>
<p>The SSD family is being promoted as a mainstream option for datacenters, and boasts of sequential reads up to 12 GBps and writes up to 6.8 GBps. Random reads clock in at 2 M IOPS, and random writes at 400 K IOPS.</p>
<p align="center"><a href="https://www.anandtech.com/show/21526/samsungs-128-tbclass-bm1743-enterprise-ssd-displayed-at-fms-2024"><img alt="" src="https://images.anandtech.com/doci/21526/pm9d3a-ff_575px.jpg" /></a></p>
<p>Available in multiple form-factors up to 32 TB (M.2 tops out at 2 TB), the drive's firmware includes optional support for flexible data placement (FDP) to help address the write amplification aspect.</p>
<p>The PM1753 is the current enterprise SSD flagship in Samsung's lineup. With support for 16 NAND channels and capacities up to 32 TB, this U.2 / E3.S SSD has advertised sequential read and write speeds of 14.8 GBps and 11 GBps respectively. Random reads and writes for 4 KB accesses are listed at 3.4 M and 600 K IOPS.</p>
<p align="center"><a href="https://www.anandtech.com/show/21526/samsungs-128-tbclass-bm1743-enterprise-ssd-displayed-at-fms-2024"><img alt="" src="https://images.anandtech.com/doci/21526/pm1753-det_575px.jpg" /></a></p>
<p>Samsung claims a 1.7x performance improvement and a 1.7x power efficiency improvement over the previous generation (PM1743), making this TLC SSD suitable for AI servers.</p>
<p>The 9<sup>th</sup> Gen. V-NAND wafer was also available for viewing, though photography was prohibited. Mass production of this flash memory began in <a href="https://semiconductor.samsung.com/news-events/news/samsung-electronics-begins-industrys-first-mass-production-of-9th-gen-v-nand/">April 2024</a>.</p>
</p> Storage | https://compbuddey.blogspot.com/2025/02/samsungs-128-tb-class-bm1743-enterprise_10.html){kind=link}
![](mailto:?subject=Samsung's 128 TB-Class BM1743 Enterprise SSD Displayed at FMS 2024 <p align="center"><a href="https://www.anandtech.com/show/21526/samsungs-128-tbclass-bm1743-enterprise-ssd-displayed-at-fms-2024"><img src="https://images.anandtech.com/doci/21526/for-carousel_575px.jpg" alt="" /></a></p><p><p>Samsung had <a href="https://www.anandtech.com/show/21465">quietly launched</a> its BM1743 enterprise QLC SSD last month with a hefty 61.44 TB SKU. At FMS 2024, the company had the even larger 122.88 TB version of that SSD on display, alongside a few recorded benchmarking sessions. Compared to the previous generation, the BM1743 comes with a 4.1x improvement in I/O performance, improvement in data retention, and a 45% improvement in power efficiency for sequential writes.</p>
<p align="center"><a href="https://www.anandtech.com/show/21526/samsungs-128-tbclass-bm1743-enterprise-ssd-displayed-at-fms-2024"><img alt="" src="https://images.anandtech.com/doci/21526/bm1743-perf_575px.jpg" /></a></p>
<p>The 128 TB-class QLC SSD boasts of sequential read speeds of 7.5 GBps and write speeds of 3 GBps. Random reads come in at 1.6 M IOPS, while 16 KB random writes clock in at 45K IOPS. Based on the quoted random write access granularity, it appears that Samsung is using a 16 KB indirection unit (IU) to optimize flash management. This is similar to the strategy adopted by Solidigm with IUs larger than 4K in their high-capacity SSDs.</p>
<p>A recorded benchmark session on the company's PM9D3a 8-channel Gen 5 SSD was also on display.</p>
<p align="center"><a href="https://www.anandtech.com/show/21526/samsungs-128-tbclass-bm1743-enterprise-ssd-displayed-at-fms-2024"><img alt="" src="https://images.anandtech.com/doci/21526/pm9d3a_575px.jpg" /></a></p>
<p>The SSD family is being promoted as a mainstream option for datacenters, and boasts of sequential reads up to 12 GBps and writes up to 6.8 GBps. Random reads clock in at 2 M IOPS, and random writes at 400 K IOPS.</p>
<p align="center"><a href="https://www.anandtech.com/show/21526/samsungs-128-tbclass-bm1743-enterprise-ssd-displayed-at-fms-2024"><img alt="" src="https://images.anandtech.com/doci/21526/pm9d3a-ff_575px.jpg" /></a></p>
<p>Available in multiple form-factors up to 32 TB (M.2 tops out at 2 TB), the drive's firmware includes optional support for flexible data placement (FDP) to help address the write amplification aspect.</p>
<p>The PM1753 is the current enterprise SSD flagship in Samsung's lineup. With support for 16 NAND channels and capacities up to 32 TB, this U.2 / E3.S SSD has advertised sequential read and write speeds of 14.8 GBps and 11 GBps respectively. Random reads and writes for 4 KB accesses are listed at 3.4 M and 600 K IOPS.</p>
<p align="center"><a href="https://www.anandtech.com/show/21526/samsungs-128-tbclass-bm1743-enterprise-ssd-displayed-at-fms-2024"><img alt="" src="https://images.anandtech.com/doci/21526/pm1753-det_575px.jpg" /></a></p>
<p>Samsung claims a 1.7x performance improvement and a 1.7x power efficiency improvement over the previous generation (PM1743), making this TLC SSD suitable for AI servers.</p>
<p>The 9<sup>th</sup> Gen. V-NAND wafer was also available for viewing, though photography was prohibited. Mass production of this flash memory began in <a href="https://semiconductor.samsung.com/news-events/news/samsung-electronics-begins-industrys-first-mass-production-of-9th-gen-v-nand/">April 2024</a>.</p>
</p> Storage&body=https://compbuddey.blogspot.com/2025/02/samsungs-128-tb-class-bm1743-enterprise_10.html){kind=link}
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