The AMD Ryzen 9 9950X and Ryzen 9 9900X Review: Flagship Zen 5 Soars - and Stalls
Earlier this month, AMD launched the first two desktop CPUs using their latest Zen 5 microarchitecture: the Ryzen 7 9700X and the Ryzen 5 9600X. As part of the new Ryzen 9000 family, it gave us their latest Zen 5 cores to the desktop market, as AMD actually launched Zen 5 through their mobile platform last month, the Ryzen AI 300 series (which we reviewed).
Today, AMD is launching the remaining two Ryzen 9000 SKUs first announced at Computex 2024, completing the current Ryzen 9000 product stack. Both chips hail from the premium Ryzen 9 series, which includes the flagship Ryzen 9 9950X, which has 16 Zen 5 cores and can boost as high as 5.7 GHz, while the Ryzen 9 9900X has 12 Zen 5 cores and offers boost clock speeds of up to 5.6 GHz.
Although they took slightly longer than expected to launch, as there was a delay from the initial launch date of July 31st, the full quartet of Ryzen 9000 X series processors armed with the latest Zen 5 cores are available. All of the Ryzen 9000 series processors use the same AM5 socket as the previous Ryzen 7000 (Zen 4) series, which means users can use current X670E and X670 motherboards with the new chips. Unfortunately, as we highlighted in our Ryzen 7 9700X and Ryzen 5 9600X review, the X870E/X870 motherboards, which were meant to launch alongside the Ryzen 9000 series, won't be available until sometime in September.
We've seen how the entry-level Ryzen 5 9600X and the mid-range Ryzen 7 9700X perform against the competition, but it's time to see how far and fast the flagship Ryzen 9 pairing competes. The Ryzen 9 9950X (16C/32T) and the Ryzen 9 9900X (12C/24T) both have a higher TDP (170 W/120 W respectively) than the Ryzen 7 and Ryzen 5 (65 W), but there are more cores, and Ryzen 9 is clocked faster at both base and turbo frequencies. With this in mind, it's time to see how AMD's Zen 5 flagship Ryzen 9 series for desktops performs with more firepower, with our review of the Ryzen 9 9950X and Ryzen 9 9900 processors.
CPUs
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Kioxia Details BiCS 8 NAND at FMS 2024: 218 Layers With Superior Scaling 
Kioxia's booth at FMS 2024 was a busy one with multiple technology demonstrations keeping visitors occupied. A walk-through of the BiCS 8 manufacturing process was the first to grab my attention. Kioxia and Western Digital announced the sampling of BiCS 8 in March 2023. We had touched briefly upon its CMOS Bonded Array (CBA) scheme in our coverage of Kioxial's 2Tb QLC NAND device and coverage of Western Digital's 128 TB QLC enterprise SSD proof-of-concept demonstration. At Kioxia's booth, we got more insights.
Traditionally, fabrication of flash chips involved placement of the associate logic circuitry (CMOS process) around the periphery of the flash array. The process then moved on to putting the CMOS under the cell array, but the wafer development process was serialized with the CMOS logic getting fabricated first followed by the cell array on top. However, this has some challenges because the cell array requires a high-temperature processing step to ensure higher reliability that can be detrimental to the health of the CMOS logic. Thanks to recent advancements in wafer bonding techniques, the new CBA process allows the CMOS wafer and cell array wafer to be processed independently in parallel and then pieced together, as shown in the models above.
The BiCS 8 3D NAND incorporates 218 layers, compared to 112 layers in BiCS 5 and 162 layers in BiCS 6. The company decided to skip over BiCS 7 (or, rather, it was probably a short-lived generation meant as an internal test vehicle). The generation retains the four-plane charge trap structure of BiCS 6. In its TLC avatar, it is available as a 1 Tbit device. The QLC version is available in two capacities - 1 Tbit and 2 Tbit.
Kioxia also noted that while the number of layers (218) doesn't compare favorably with the latest layer counts from the competition, its lateral scaling / cell shrinkage has enabled it to be competitive in terms of bit density as well as operating speeds (3200 MT/s). For reference, the latest shipping NAND from Micron - the G9 - has 276 layers with a bit density in TLC mode of 21 Gbit/mm2, and operates at up to 3600 MT/s. However, its 232L NAND operates only up to 2400 MT/s and has a bit density of 14.6 Gbit/mm2.
It must be noted that the CBA hybrid bonding process has advantages over the current processes used by other vendors - including Micron's CMOS under array (CuA) and SK hynix's 4D PUC (periphery-under-chip) developed in the late 2010s. It is expected that other NAND vendors will also move eventually to some variant of the hybrid bonding scheme used by Kioxia.
Storage
Kioxia Details BiCS 8 NAND at FMS 2024: 218 Layers With Superior Scaling
Kioxia's booth at FMS 2024 was a busy one with multiple technology demonstrations keeping visitors occupied. A walk-through of the BiCS 8 manufacturing process was the first to grab my attention. Kioxia and Western Digital announced the sampling of BiCS 8 in March 2023. We had touched briefly upon its CMOS Bonded Array (CBA) scheme in our coverage of Kioxial's 2Tb QLC NAND device and coverage of Western Digital's 128 TB QLC enterprise SSD proof-of-concept demonstration. At Kioxia's booth, we got more insights.
Traditionally, fabrication of flash chips involved placement of the associate logic circuitry (CMOS process) around the periphery of the flash array. The process then moved on to putting the CMOS under the cell array, but the wafer development process was serialized with the CMOS logic getting fabricated first followed by the cell array on top. However, this has some challenges because the cell array requires a high-temperature processing step to ensure higher reliability that can be detrimental to the health of the CMOS logic. Thanks to recent advancements in wafer bonding techniques, the new CBA process allows the CMOS wafer and cell array wafer to be processed independently in parallel and then pieced together, as shown in the models above.
The BiCS 8 3D NAND incorporates 218 layers, compared to 112 layers in BiCS 5 and 162 layers in BiCS 6. The company decided to skip over BiCS 7 (or, rather, it was probably a short-lived generation meant as an internal test vehicle). The generation retains the four-plane charge trap structure of BiCS 6. In its TLC avatar, it is available as a 1 Tbit device. The QLC version is available in two capacities - 1 Tbit and 2 Tbit.
Kioxia also noted that while the number of layers (218) doesn't compare favorably with the latest layer counts from the competition, its lateral scaling / cell shrinkage has enabled it to be competitive in terms of bit density as well as operating speeds (3200 MT/s). For reference, the latest shipping NAND from Micron - the G9 - has 276 layers with a bit density in TLC mode of 21 Gbit/mm2, and operates at up to 3600 MT/s. However, its 232L NAND operates only up to 2400 MT/s and has a bit density of 14.6 Gbit/mm2.
It must be noted that the CBA hybrid bonding process has advantages over the current processes used by other vendors - including Micron's CMOS under array (CuA) and SK hynix's 4D PUC (periphery-under-chip) developed in the late 2010s. It is expected that other NAND vendors will also move eventually to some variant of the hybrid bonding scheme used by Kioxia.
Storage
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