The Lian Li Hydroshift LCD 360S AIO Cooler Review: Sleek, Stylish, and Lively
Among the packed field of PC hardware manufacturers, Lian Li is a company that arguably shouldn't even need an introduction. The quirky company has developed a devout following thanks to its focus on premium-quality aluminum computer cases that, more often that not, and come with in some rather unique designs. Over the years, the company has developed a solid reputation for its meticulous craftsmanship, durability, and elegant aesthetics. And consequently, when the company made the decision to expand beyond aluminum cases and in to other PC peripherals, that development attracted quite a bit of attention to see what kind of a touch Lian Li could bring to the rest of the PC ecosystem.
Lian Li's focus on premium products means that the company doesn't really make much in the way of products that are merely basic, and that kind of mentality has extended beyond cases and into the rest of their peripherals. Case in point is the subject of today's review: Lian Li's new all-in-one CPU cooler, the HydroShift LCD 360S AIO. Not content just to make a powerful 360 mm cooler, Lian Li has gone a step above by integrating recesses and other features to help hide the tubing around the cooler, and then for the coup de grace, added a high-quality 2.88-inch IPS display to the pump block.
Overall, this new product marks a significant milestone for Lian Li, as it combines advanced cooling technology with the company's signature aesthetic appeal, making for a cooler that's aimed at both enthusiasts and professional users seeking high-end thermal performance and visual customization. Overall, the HydroShift LCD 360S is undeniably designed first and foremost with aesthetics in mind, but the shiny pump block is backed up with one of the most powerful 360 mm cooler designs on the market today. So Lian Li is throwing everything they have at the new HydroShift coolers.
Overall, the 360S is part of a trio of HydroShift 360 mm coolers the company is launching this summer. All three share a similar design, although with some pump changes and the addition of RGB fan lighting, depending on the specific model, with the 360S effectively serving as the base model.
Cases/Cooling/PSUs
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Samsung Foundry Unveils Updated Roadmap: BSPDN and 2nm Evolution Through 2027 
Samsung this week has unveiled its latest process technologies roadmap at the company's Samsung Foundry Forum (SFF) U.S. The new plan covers the evolution of Samsung's 2nm-class production nodes through 2027, including a process technology with a backside power delivery, re-emphasizing plans to bring out a 1.4nm-class node in 2027, and the introduction of a 'high value' 4nm-class manufacturing tech.
Samsung Foundry's key announcements for today are clearly focused on the its 2nm-class process technologies, which are set to enter production in 2025 and will span to 2027, when the company's 1.4-nm class production node is set to enter the scene. Samsung is also adding (or rather, renaming) another 2nm-class node to their roadmap with SF2, which was previously disclosed by Samsung as SF3P and aimed at high-performance devices.
"We have refined and improved the SF3P, resulting in what we now refer to as SF2," a Samsung spokesperson told AnandTech. "This enhanced node incorporates various process design improvements, delivering notable power, performance, and area (PPA) benefits."
| Samsung Foundry for Leading-Edge Nodes Announced on June 12, 2024 Compiled by AnandTech |
||||||||
| HVM Start | 2023 | 2024 | 2025 | 2026 | 2027 | 2027 | ||
| Process | SF3E | SF3 | SF2 (aka SF3P) |
SF2P/SF2X | SF2Z | SF1.4 | ||
| FET | GAAFET | |||||||
| Power Delivery | Frontside | Backside (BSPDN) | ? | |||||
| EUV | 0.33 NA EUV | ? | ? | ? | ? | |||
This is another example of a rebranding of leading-edge fabrication nodes in the recent years by a major chipmaker. Samsung Foundry is not disclosing any specific PPA improvements SF3P has over SF2, and for now is only stating in high-level terms that it will be a better-performing node than the planned SF3P.
Meanwhile, this week's announcement also includes new information on Samsung's next batch of process nodes, which are planned for 2026 and 2027. In 2026 Samsung will have SF2P, a further refinement of SF2 which incorporates 'faster' yet less dense transistors. That will be followed up in 2027 with SF2Z, which adds backside power delivery to the mix for better and higher quality power delivery. In particular, Samsung is targetting voltate drop (aka IR drop) here, which is an ongoing concern in chip design.
Finally, SF1.4, a 1.4nm-class node, is on track for 2027 as well. Interestingly, however, it looks like it does not feature a backside power delivery. Which, per current roadmaps, would have Samsung as the only foundry not using BSPDN for their first 1.4nm/14Å-class node.
"We have optimized BSPDN and incorporated it for the first time in the SF2Z node we announced today," the spokesperso... Semiconductors
SK hynix Platinum P51 Gen5 SSD with 238L NAND Spotted at GTC 
SK hynix is set to unveil their first Gen5 consumer NVMe SSD lineup shortly, based on the products at display in their GTC 2024 booth. The Platinum P51 M.2 2280 NVMe SSD will take over flagship duties from the Platinum P41 that has been serving the market for more than a year.
Similar to the Gold P31 and the Platinum P41, the Platinum P51 also uses an in-house SSD controller. The key updates are the move to PCIe Gen5 and the use of SK hynix's 238L TLC NAND. Other details are scarce, and we have reached out for additional information.
| SK hynix Platinum P51 Gen5 NVMe SSD Specifications | ||||
| Capacity | 500 GB | 1 TB | 2 TB | |
| Controller | SK hynix In-House (Alistar) | |||
| NAND Flash | SK hynix 238L 3D TLC NAND at ?? MT/s ('4D' with CMOS circuitry under the NAND as per SK hynix marketing) | |||
| Form-Factor, Interface | M.2-2280, PCIe 5.0 x4, NVMe 2.0 | |||
| Sequential Read | 13500 MB/s | |||
| Sequential Write | 11500 MB/s | |||
| Random Read IOPS | TBD | |||
| Random Write IOPS | TBD | |||
| SLC Caching | Yes | |||
| TCG Opal Encryption | TBD | |||
| Warranty | TBD | |||
| Write Endurance | TBD | TBD | TBD | |
Only the peak sequential access numbers were available at the GTC booth, indicating that the drive's firmware is still undergoing tweaks. It is also unclear how these numbers are going to vary based on capacity. Availability and pricing are also not public yet.
This is a significant launch for the Gen5 consumer SSD market, where the number of available options are quite limited. The Phison E26 controller and Micron's B58R NAND combination is already in its second generation (with the NAND operating at 2400 MT/s in the newest avatar), but other vertically integrated vendors such as Samsung, Western Digital / Kioxia, and SK hynix (till now) are focusing more on the Gen4 market which has much higher adoption.
We will update the piece with additional information once the specifications are officially available.
Storage
Fadu's FC5161 SSD Controller Breaks Cover in Western Digital's PCIe Gen5 Enterprise Drives 
When Western Digital introduced its Ultrastar DC SN861 SSDs earlier this year, the company did not disclose which controller it used for these drives, which made many observers presume that WD was using an in-house controller. But a recent teardown of the drive shows that is not the case; instead, the company is using a controller from Fadu, a South Korean company founded in 2015 that specializes on enterprise-grade turnkey SSD solutions.
The Western Digital Ultrastar DC SN861 SSD is aimed at performance-hungry hyperscale datacenters and enterprise customers which are adopting PCIe Gen5 storage devices these days. And, as uncovered in photos from a recent Storage Review article, the drive is based on Fadu's FC5161 NVMe 2.0-compliant controller. The FC5161 utilizes 16 NAND channels supporting an ONFi 5.0 2400 MT/s interface, and features a combination of enterprise-grade capabilities (OCP Cloud Spec 2.0, SR-IOV, up to 512 name spaces for ZNS support, flexible data placement, NVMe-MI 1.2, advanced security, telemetry, power loss protection) not available on other off-the-shelf controllers – or on any previous Western Digital controllers.
The Ultrastar DC SN861 SSD offers sequential read speeds up to 13.7 GB/s as well as sequential write speeds up to 7.5 GB/s. As for random performance, it boasts with an up to 3.3 million random 4K read IOPS and up to 0.8 million random 4K write IOPS. The drives are available in capacities between 1.6 TB and 7.68 TB with one or three drive writes per day (DWPD) over five years rating as well as in U.2 and E1.S form-factors.
While the two form factors of the SN861 share a similar technical design, Western Digital has tailored each version for distinct workloads: the E1.S supports FDP and performance enhancements specifically for cloud environments. By contrast, the U.2 model is geared towards high-performance enterprise tasks and emerging applications like AI.
Without any doubts, Western Digital's Ultrastar DC SN861 is a feature-rich high-performance enterprise-grade SSD. It has another distinctive feature: a 5W idle power consumption, which is rather low by the standards of enterprise-grade drives (e.g., it is 1W lower compared to the SN840). While the difference with predecessors may be just 1W, hyperscalers deploy thousands of drives and for their TCO every watt counts.
Western Digital's Ultrastar DC SN861 SSDs are now available for purchase to select customers (such as Meta) and to interested parties. Prices are unknown, but they will depend on such factors as volumes.
Sources: Fadu, Storage Review
Storage
Samsung Foundry Unveils Updated Roadmap: BSPDN and 2nm Evolution Through 2027
Samsung this week has unveiled its latest process technologies roadmap at the company's Samsung Foundry Forum (SFF) U.S. The new plan covers the evolution of Samsung's 2nm-class production nodes through 2027, including a process technology with a backside power delivery, re-emphasizing plans to bring out a 1.4nm-class node in 2027, and the introduction of a 'high value' 4nm-class manufacturing tech.
Samsung Foundry's key announcements for today are clearly focused on the its 2nm-class process technologies, which are set to enter production in 2025 and will span to 2027, when the company's 1.4-nm class production node is set to enter the scene. Samsung is also adding (or rather, renaming) another 2nm-class node to their roadmap with SF2, which was previously disclosed by Samsung as SF3P and aimed at high-performance devices.
"We have refined and improved the SF3P, resulting in what we now refer to as SF2," a Samsung spokesperson told AnandTech. "This enhanced node incorporates various process design improvements, delivering notable power, performance, and area (PPA) benefits."
| Samsung Foundry for Leading-Edge Nodes Announced on June 12, 2024 Compiled by AnandTech |
||||||||
| HVM Start | 2023 | 2024 | 2025 | 2026 | 2027 | 2027 | ||
| Process | SF3E | SF3 | SF2 (aka SF3P) |
SF2P/SF2X | SF2Z | SF1.4 | ||
| FET | GAAFET | |||||||
| Power Delivery | Frontside | Backside (BSPDN) | ? | |||||
| EUV | 0.33 NA EUV | ? | ? | ? | ? | |||
This is another example of a rebranding of leading-edge fabrication nodes in the recent years by a major chipmaker. Samsung Foundry is not disclosing any specific PPA improvements SF3P has over SF2, and for now is only stating in high-level terms that it will be a better-performing node than the planned SF3P.
Meanwhile, this week's announcement also includes new information on Samsung's next batch of process nodes, which are planned for 2026 and 2027. In 2026 Samsung will have SF2P, a further refinement of SF2 which incorporates 'faster' yet less dense transistors. That will be followed up in 2027 with SF2Z, which adds backside power delivery to the mix for better and higher quality power delivery. In particular, Samsung is targetting voltate drop (aka IR drop) here, which is an ongoing concern in chip design.
Finally, SF1.4, a 1.4nm-class node, is on track for 2027 as well. Interestingly, however, it looks like it does not feature a backside power delivery. Which, per current roadmaps, would have Samsung as the only foundry not using BSPDN for their first 1.4nm/14Å-class node.
"We have optimized BSPDN and incorporated it for the first time in the SF2Z node we announced today," the spokesperso... Semiconductors
SK hynix Platinum P51 Gen5 SSD with 238L NAND Spotted at GTC
SK hynix is set to unveil their first Gen5 consumer NVMe SSD lineup shortly, based on the products at display in their GTC 2024 booth. The Platinum P51 M.2 2280 NVMe SSD will take over flagship duties from the Platinum P41 that has been serving the market for more than a year.
Similar to the Gold P31 and the Platinum P41, the Platinum P51 also uses an in-house SSD controller. The key updates are the move to PCIe Gen5 and the use of SK hynix's 238L TLC NAND. Other details are scarce, and we have reached out for additional information.
| SK hynix Platinum P51 Gen5 NVMe SSD Specifications | ||||
| Capacity | 500 GB | 1 TB | 2 TB | |
| Controller | SK hynix In-House (Alistar) | |||
| NAND Flash | SK hynix 238L 3D TLC NAND at ?? MT/s ('4D' with CMOS circuitry under the NAND as per SK hynix marketing) | |||
| Form-Factor, Interface | M.2-2280, PCIe 5.0 x4, NVMe 2.0 | |||
| Sequential Read | 13500 MB/s | |||
| Sequential Write | 11500 MB/s | |||
| Random Read IOPS | TBD | |||
| Random Write IOPS | TBD | |||
| SLC Caching | Yes | |||
| TCG Opal Encryption | TBD | |||
| Warranty | TBD | |||
| Write Endurance | TBD | TBD | TBD | |
Only the peak sequential access numbers were available at the GTC booth, indicating that the drive's firmware is still undergoing tweaks. It is also unclear how these numbers are going to vary based on capacity. Availability and pricing are also not public yet.
This is a significant launch for the Gen5 consumer SSD market, where the number of available options are quite limited. The Phison E26 controller and Micron's B58R NAND combination is already in its second generation (with the NAND operating at 2400 MT/s in the newest avatar), but other vertically integrated vendors such as Samsung, Western Digital / Kioxia, and SK hynix (till now) are focusing more on the Gen4 market which has much higher adoption.
We will update the piece with additional information once the specifications are officially available.
Storage
Fadu's FC5161 SSD Controller Breaks Cover in Western Digital's PCIe Gen5 Enterprise Drives
When Western Digital introduced its Ultrastar DC SN861 SSDs earlier this year, the company did not disclose which controller it used for these drives, which made many observers presume that WD was using an in-house controller. But a recent teardown of the drive shows that is not the case; instead, the company is using a controller from Fadu, a South Korean company founded in 2015 that specializes on enterprise-grade turnkey SSD solutions.
The Western Digital Ultrastar DC SN861 SSD is aimed at performance-hungry hyperscale datacenters and enterprise customers which are adopting PCIe Gen5 storage devices these days. And, as uncovered in photos from a recent Storage Review article, the drive is based on Fadu's FC5161 NVMe 2.0-compliant controller. The FC5161 utilizes 16 NAND channels supporting an ONFi 5.0 2400 MT/s interface, and features a combination of enterprise-grade capabilities (OCP Cloud Spec 2.0, SR-IOV, up to 512 name spaces for ZNS support, flexible data placement, NVMe-MI 1.2, advanced security, telemetry, power loss protection) not available on other off-the-shelf controllers – or on any previous Western Digital controllers.
The Ultrastar DC SN861 SSD offers sequential read speeds up to 13.7 GB/s as well as sequential write speeds up to 7.5 GB/s. As for random performance, it boasts with an up to 3.3 million random 4K read IOPS and up to 0.8 million random 4K write IOPS. The drives are available in capacities between 1.6 TB and 7.68 TB with one or three drive writes per day (DWPD) over five years rating as well as in U.2 and E1.S form-factors.
While the two form factors of the SN861 share a similar technical design, Western Digital has tailored each version for distinct workloads: the E1.S supports FDP and performance enhancements specifically for cloud environments. By contrast, the U.2 model is geared towards high-performance enterprise tasks and emerging applications like AI.
Without any doubts, Western Digital's Ultrastar DC SN861 is a feature-rich high-performance enterprise-grade SSD. It has another distinctive feature: a 5W idle power consumption, which is rather low by the standards of enterprise-grade drives (e.g., it is 1W lower compared to the SN840). While the difference with predecessors may be just 1W, hyperscalers deploy thousands of drives and for their TCO every watt counts.
Western Digital's Ultrastar DC SN861 SSDs are now available for purchase to select customers (such as Meta) and to interested parties. Prices are unknown, but they will depend on such factors as volumes.
Sources: Fadu, Storage Review
Storage
![TSMC to Expand Specialty Capacity by 50%, Introduce 4nm N4e Low-Power Node <p align="center"><a href="https://www.anandtech.com/show/21397/tsmc-to-expand-specialty-capacity-by-50-introduce-4nm-lowpower-node"><img src="https://images.anandtech.com/doci/21397/tsmc-semiconductor-fab-wafer-1-678_575px.jpg" alt="" /></a></p><p><p>With all the new fabs being built in Germany and Japan, as well as the expansion of production capacity in China, TSMC is planning to extend its production capacity for specialty technologies by 50% by 2027. As disclosed by the company during its European Technology Symposium this week, TSMC expects to need to not only convert existing capacity to meet demands for specialty processes, but even build new (greenfield) fab space just for this purpose. One of the big drivers for this demand, in turn, will be TSMC's next specialty node: N4e, a 4nm-class ultra-low-power production node.</p>
<p>"In the past, we always did the review phase [for upcoming fabs], but for the first time in a long time at TSMC, we started building greenfield fab that will address the future specialty technology requirements," said Dr. Kevin Zhang, Senior Vice President, Business Development and Overseas Operations Office, at the event. "In the next four to five years, we actually going to grow our specialty capacity by up to 1.5x. In doing so we actually expanding the footprint of our manufacturing network to improve the resiliency of the overall fab supply chain."</p>
<p>On top of its well-known major logic nodes like N5 and N3E, TSMC also offers a suite of specialty nodes for applications such as power semiconductors, mixed analog I/O, and ultra-low-power applications (e.g. IoT). These are typically based on the company's trailing manufacturing processes, but regardless of the underlying technology, the capacity demand for these nodes is growing right alongside the demand for TSMC's major logic nodes. All of which has required TSMC to reevaluate how they go about planning for capacity on their specialty nodes.</p>
<p>TSMC's expansion strategy in the recent years has pursued several goals. One of them has been to build new fabs outside of Taiwan; another has been to generally expand production capacity to meet future demand for all types of process technologies – which is why the company is building up capacity for specialty nodes.</p>
<p>At present, TSMC's most advanced specialty node is N6e, an N7/N6 variant that supports operating voltages between 0.4V and 0.9V. With N4e, TSMC is looking at voltages below 0.4V. Though for now, TSMC is not disclosing much in the way of technical details for the planned node; given the company's history here, we expect they'll have more to talk about next year once the new process is ready.</p>
</p> Semiconductors](https://lh3.googleusercontent.com/blogger_img_proxy/AEn0k_tkyE7Kje2obEnyWzm_HYpRZCiHvYTMQPin-qiMGLchdnbsxUGC-CLljpzysSlS5PMPBpyq8UF7npBHiVrouUX5DQiJe64fUtvzX1CJf9Ebb6SNBeet8yiIienZJrEb004wNPaTysYUmFfOkQHw2vh0tAxF0n7Dgw=w72-h72-p-k-no-nu)
Lorem Ipsum is simply dummy text of the printing and typesetting industry. Lorem Ipsum has been the industry's.
Samsung Foundry Unveils Updated Roadmap: BSPDN and 2nm Evolution Through 2027
Samsung this week has unveiled its latest process technologies roadmap at the company's Samsung Foundry Forum (SFF) U.S. The new plan covers the evolution of Samsung's 2nm-class production nodes through 2027, including a process technology with a backside power delivery, re-emphasizing plans to bring out a 1.4nm-class node in 2027, and the introduction of a 'high value' 4nm-class manufacturing tech.
Samsung Foundry's key announcements for today are clearly focused on the its 2nm-class process technologies, which are set to enter production in 2025 and will span to 2027, when the company's 1.4-nm class production node is set to enter the scene. Samsung is also adding (or rather, renaming) another 2nm-class node to their roadmap with SF2, which was previously disclosed by Samsung as SF3P and aimed at high-performance devices.
"We have refined and improved the SF3P, resulting in what we now refer to as SF2," a Samsung spokesperson told AnandTech. "This enhanced node incorporates various process design improvements, delivering notable power, performance, and area (PPA) benefits."
| Samsung Foundry for Leading-Edge Nodes Announced on June 12, 2024 Compiled by AnandTech |
||||||||
| HVM Start | 2023 | 2024 | 2025 | 2026 | 2027 | 2027 | ||
| Process | SF3E | SF3 | SF2 (aka SF3P) |
SF2P/SF2X | SF2Z | SF1.4 | ||
| FET | GAAFET | |||||||
| Power Delivery | Frontside | Backside (BSPDN) | ? | |||||
| EUV | 0.33 NA EUV | ? | ? | ? | ? | |||
This is another example of a rebranding of leading-edge fabrication nodes in the recent years by a major chipmaker. Samsung Foundry is not disclosing any specific PPA improvements SF3P has over SF2, and for now is only stating in high-level terms that it will be a better-performing node than the planned SF3P.
Meanwhile, this week's announcement also includes new information on Samsung's next batch of process nodes, which are planned for 2026 and 2027. In 2026 Samsung will have SF2P, a further refinement of SF2 which incorporates 'faster' yet less dense transistors. That will be followed up in 2027 with SF2Z, which adds backside power delivery to the mix for better and higher quality power delivery. In particular, Samsung is targetting voltate drop (aka IR drop) here, which is an ongoing concern in chip design.
Finally, SF1.4, a 1.4nm-class node, is on track for 2027 as well. Interestingly, however, it looks like it does not feature a backside power delivery. Which, per current roadmaps, would have Samsung as the only foundry not using BSPDN for their first 1.4nm/14Å-class node.
"We have optimized BSPDN and incorporated it for the first time in the SF2Z node we announced today," the spokesperso... Semiconductors
SK hynix Platinum P51 Gen5 SSD with 238L NAND Spotted at GTC
SK hynix is set to unveil their first Gen5 consumer NVMe SSD lineup shortly, based on the products at display in their GTC 2024 booth. The Platinum P51 M.2 2280 NVMe SSD will take over flagship duties from the Platinum P41 that has been serving the market for more than a year.
Similar to the Gold P31 and the Platinum P41, the Platinum P51 also uses an in-house SSD controller. The key updates are the move to PCIe Gen5 and the use of SK hynix's 238L TLC NAND. Other details are scarce, and we have reached out for additional information.
| SK hynix Platinum P51 Gen5 NVMe SSD Specifications | ||||
| Capacity | 500 GB | 1 TB | 2 TB | |
| Controller | SK hynix In-House (Alistar) | |||
| NAND Flash | SK hynix 238L 3D TLC NAND at ?? MT/s ('4D' with CMOS circuitry under the NAND as per SK hynix marketing) | |||
| Form-Factor, Interface | M.2-2280, PCIe 5.0 x4, NVMe 2.0 | |||
| Sequential Read | 13500 MB/s | |||
| Sequential Write | 11500 MB/s | |||
| Random Read IOPS | TBD | |||
| Random Write IOPS | TBD | |||
| SLC Caching | Yes | |||
| TCG Opal Encryption | TBD | |||
| Warranty | TBD | |||
| Write Endurance | TBD | TBD | TBD | |
Only the peak sequential access numbers were available at the GTC booth, indicating that the drive's firmware is still undergoing tweaks. It is also unclear how these numbers are going to vary based on capacity. Availability and pricing are also not public yet.
This is a significant launch for the Gen5 consumer SSD market, where the number of available options are quite limited. The Phison E26 controller and Micron's B58R NAND combination is already in its second generation (with the NAND operating at 2400 MT/s in the newest avatar), but other vertically integrated vendors such as Samsung, Western Digital / Kioxia, and SK hynix (till now) are focusing more on the Gen4 market which has much higher adoption.
We will update the piece with additional information once the specifications are officially available.
Storage
Fadu's FC5161 SSD Controller Breaks Cover in Western Digital's PCIe Gen5 Enterprise Drives
When Western Digital introduced its Ultrastar DC SN861 SSDs earlier this year, the company did not disclose which controller it used for these drives, which made many observers presume that WD was using an in-house controller. But a recent teardown of the drive shows that is not the case; instead, the company is using a controller from Fadu, a South Korean company founded in 2015 that specializes on enterprise-grade turnkey SSD solutions.
The Western Digital Ultrastar DC SN861 SSD is aimed at performance-hungry hyperscale datacenters and enterprise customers which are adopting PCIe Gen5 storage devices these days. And, as uncovered in photos from a recent Storage Review article, the drive is based on Fadu's FC5161 NVMe 2.0-compliant controller. The FC5161 utilizes 16 NAND channels supporting an ONFi 5.0 2400 MT/s interface, and features a combination of enterprise-grade capabilities (OCP Cloud Spec 2.0, SR-IOV, up to 512 name spaces for ZNS support, flexible data placement, NVMe-MI 1.2, advanced security, telemetry, power loss protection) not available on other off-the-shelf controllers – or on any previous Western Digital controllers.
The Ultrastar DC SN861 SSD offers sequential read speeds up to 13.7 GB/s as well as sequential write speeds up to 7.5 GB/s. As for random performance, it boasts with an up to 3.3 million random 4K read IOPS and up to 0.8 million random 4K write IOPS. The drives are available in capacities between 1.6 TB and 7.68 TB with one or three drive writes per day (DWPD) over five years rating as well as in U.2 and E1.S form-factors.
While the two form factors of the SN861 share a similar technical design, Western Digital has tailored each version for distinct workloads: the E1.S supports FDP and performance enhancements specifically for cloud environments. By contrast, the U.2 model is geared towards high-performance enterprise tasks and emerging applications like AI.
Without any doubts, Western Digital's Ultrastar DC SN861 is a feature-rich high-performance enterprise-grade SSD. It has another distinctive feature: a 5W idle power consumption, which is rather low by the standards of enterprise-grade drives (e.g., it is 1W lower compared to the SN840). While the difference with predecessors may be just 1W, hyperscalers deploy thousands of drives and for their TCO every watt counts.
Western Digital's Ultrastar DC SN861 SSDs are now available for purchase to select customers (such as Meta) and to interested parties. Prices are unknown, but they will depend on such factors as volumes.
Sources: Fadu, Storage Review
Storage
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