Micron Expands Datacenter DRAM Portfolio with MR-DIMMs
The compute market has always been hungry for memory bandwidth, particularly for high-performance applications in servers and datacenters. In recent years, the explosion in core counts per socket has further accentuated this need. Despite progress in DDR speeds, the available bandwidth per core has unfortunately not seen a corresponding scaling.
The stakeholders in the industry have been attempting to address this by building additional technology on top of existing widely-adopted memory standards. With DDR5, there are currently two technologies attempting to increase the peak bandwidth beyond the official speeds. In late 2022, SK hynix introduced MCR-DIMMs meant for operating with specific Intel server platforms. On the other hand, JEDEC - the standards-setting body - also developed specifications for MR-DIMMs with a similar approach. Both of them build upon existing DDR5 technologies by attempting to combine multiple ranks to improve peak bandwidth and latency.
How MR-DIMMs Work
The MR-DIMM standard is conceptually simple - there are multiple ranks of memory modules operating at standard DDR5 speeds with a data buffer in front. The buffer operates at 2x the speed on the host interface side, allowing for essentially double the transfer rates. The challenges obviously lie in being able to operate the logic in the host memory controller at the higher speed and keeping the power consumption / thermals in check.
The first version of the JEDEC MR-DIMM standard specifies speeds of 8800 MT/s, with the next generation at 12800 MT/s. JEDEC also has a clear roadmap for this technology, keeping it in sync with the the improvements in the DDR5 standard.
Micron MR-DIMMs - Bandwidth and Capacity Plays
Micron and Intel have been working closely in the last few quarters to bring their former's first-generation MR-DIMM lineup to the market. Intel's Xeon 6 Family with P-Cores (Granite Rapids) is the first platform to bring MR-DIMM support at 8800 MT/s on the host side. Micron's standard-sized MR-DIMMs (suitable for 1U servers) and TFF (tall form-factor) MR-DIMMs (for 2U+ servers) have been qualified for use with the same.
The benefits offered by MR-DIMMs are evident from the JEDEC specifications, allowing for increased data rates and system bandwidth, with improvements in latency. On the capacity side, allowing for additional ranks on the modules has enabled Micron to offer a 256 GB capacity point. It must be noted that some vendors are also using TSV (through-silicon vias) technology to to increase the per-package capacity at standard DDR5 speeds, but this adds additional cost and complexity that are largely absent in the MR-DIMM manufacturing process.
The tall form-factor (TFF) MR-DIMMs have a larger surface area compared to the standard-sized ones. For the same airflow configuration, this allows the DIMM to have a better thermal profile. This provides benefits for energy efficiency as well by reducing the possibility of thermal throttling.
Micron is launching a comprehensive lineup of MR-DIMMs in both standard and tall form-factors today, with multiple DRAM densities and speed options as noted above.
MRDIMM Benefits - Intel Granite Rapids Gets a Performance Boost
Micron and Intel hosted a media / analyst briefing recently to demonstrate the benefits of MR-DIMMs for Xeon 6 with P-Cores (Granite Rapids). Using a 2P configuration with 96-core Xeon 6 processors, benchmarks for different ... Memory
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MiTAC/Tyan Shows Off Motherboard and Servers for Intel's Xeon 6 CPUs 
Later this year Intel is set to introduce its Xeon 6-branded processors, codenamed Granite Rapids (6x00P) and Sierra Forest (6x00E). And with it will come a new slew of server motherboards and pre-built server platforms to go with it. On the latter note, this will be the first generation where Intel won't be offering any pre-builts of its own, after selling that business off to MiTAC last year.
To that end, MiTAC and its subsidiary Tyan were at this year's event to demonstrate what they've been up to since acquiring Intel's server business unit, as well as to show off the server platforms they're developing for the Xeon 6 family. Altogether, the companies had two server platforms on display – a compact 2S system, and a larger 2S system with significant expansion capabilities – as well as a pair of single-socket designs from Tyan.
The most basic platform that MiTAC had to show is their TX86-E7148 (Katmai Pass), a half-width 1U system that's the successor to Intel's D50DNP platform. Katmai Pass has two CPU sockets, supports up to 2 TB of DDR5-6400 RDIMMs over 16 slots (8 per CPU), and has two low-profile PCIe 5.0 x16 slots. Like its predecessor, this platform is aimed at mainstream servers that do not need a lot of storage or room to house bulky add-in cards like AI accelerators.
The company's other platform is TX77A-E7142 (Deer Creek Pass), a considerably more serious offering that replaces Intel's M50FCP platform. This board can house up to 4 TB of DDR5-6400 RDIMMs over 32 slots (16 per CPU with 2DPC), four PCIe 5.0 x16 slots, one PCIe 5.0 x8 slot, two OCP 3.0 slots, and 24 hot-swap U.2 bays. Deer Creek Pass can be used both for general-purpose workloads, high-performance storage, as well as workloads that require GPUs or other special-purpose accelerators.
Meanwhile Tyan had the single-socket Thunder CX GC73A-B5660 on display. That system supports up to 2 TB of DDR5-6400 memory over 16 RDIMMs and offers two PCIe 5.0 x16 slots, one PCIe 4.0 x4 M.2 slot, two OCP 3.0 slots, and 12 hot-swappable U.2 drive bays.
Finally, Tyan's Thunder HX S5662 is an HPC server board specifically designed to house multiple AI accelerators and other large PCIe cards. This board supports one Xeon 6 6700 processor, up to 1 TB of memory over eight DDR5-6400 RDIMMs, and has five tradiitonal PCIe 5.0 x16 slots as well as two PCIe 5.0 x2 M.2 slots for storage.
MiTAC is expected to start shipments of these new Xeon 6 motherboards in the coming months, as Intel rolls out its next-generation datacenter CPUs. Pricing of these platforms is unknown for now, but expect it to be comparable to... Servers
Kioxia Details BiCS 8 NAND at FMS 2024: 218 Layers With Superior Scaling 
Kioxia's booth at FMS 2024 was a busy one with multiple technology demonstrations keeping visitors occupied. A walk-through of the BiCS 8 manufacturing process was the first to grab my attention. Kioxia and Western Digital announced the sampling of BiCS 8 in March 2023. We had touched briefly upon its CMOS Bonded Array (CBA) scheme in our coverage of Kioxial's 2Tb QLC NAND device and coverage of Western Digital's 128 TB QLC enterprise SSD proof-of-concept demonstration. At Kioxia's booth, we got more insights.
Traditionally, fabrication of flash chips involved placement of the associate logic circuitry (CMOS process) around the periphery of the flash array. The process then moved on to putting the CMOS under the cell array, but the wafer development process was serialized with the CMOS logic getting fabricated first followed by the cell array on top. However, this has some challenges because the cell array requires a high-temperature processing step to ensure higher reliability that can be detrimental to the health of the CMOS logic. Thanks to recent advancements in wafer bonding techniques, the new CBA process allows the CMOS wafer and cell array wafer to be processed independently in parallel and then pieced together, as shown in the models above.
The BiCS 8 3D NAND incorporates 218 layers, compared to 112 layers in BiCS 5 and 162 layers in BiCS 6. The company decided to skip over BiCS 7 (or, rather, it was probably a short-lived generation meant as an internal test vehicle). The generation retains the four-plane charge trap structure of BiCS 6. In its TLC avatar, it is available as a 1 Tbit device. The QLC version is available in two capacities - 1 Tbit and 2 Tbit.
Kioxia also noted that while the number of layers (218) doesn't compare favorably with the latest layer counts from the competition, its lateral scaling / cell shrinkage has enabled it to be competitive in terms of bit density as well as operating speeds (3200 MT/s). For reference, the latest shipping NAND from Micron - the G9 - has 276 layers with a bit density in TLC mode of 21 Gbit/mm2, and operates at up to 3600 MT/s. However, its 232L NAND operates only up to 2400 MT/s and has a bit density of 14.6 Gbit/mm2.
It must be noted that the CBA hybrid bonding process has advantages over the current processes used by other vendors - including Micron's CMOS under array (CuA) and SK hynix's 4D PUC (periphery-under-chip) developed in the late 2010s. It is expected that other NAND vendors will also move eventually to some variant of the hybrid bonding scheme used by Kioxia.
Storage
![TSMC's System-on-Wafer Platform Goes 3D: CoW-SoW Stacks Up the Chips <p align="center"><a href="https://www.anandtech.com/show/21372/tsmcs-system-on-wafer-platform-goes-3d-cow-sow"><img src="https://images.anandtech.com/doci/21372/tsmc-sow-tesla-dojo-678_575px.png" alt="" /></a></p><p><p>TSMC has been offering its System-on-Wafer integration technology, InFO-SoW, since 2020. For now, only Cerebras and Tesla have developed wafer scale processor designs using it, as while they have fantastic performance and power efficiency, wafer-scale processors are extremely complex to develop and produce. But TSMC believes that not only will wafer-scale designs ramp up in usage, but that megatrends like AI and HPC will call for even more complex solutions: vertically stacked system-on-wafer designs.</p>
<p style="text-align: center;"><a href="https://www.anandtech.com/show/21372/tsmcs-system-on-wafer-platform-goes-3d-cow-sow"><img alt="" src="https://images.anandtech.com/doci/21372/tsmc-sow-tesla-dojo-575px.png" /></a></p>
<p>Tesla Dojo's wafer-scale processors — the first solutions based based on TSMC's InFO-SoW technology that are in mass production — have a number of benefits over typical system-in-packages (SiPs), including low-latency high-bandwidth core-to-core communications, very high performance and bandwidth density, relatively low power delivery network impendance, high performance efficiency, and redunancy.</p>
<p>But with InFO-SoW and other wafer scale integration methods, processor designers have to rely solely on on-chip memory. This is perfectly adequate for many applications, but it may not be enough for next-generation AI workloads. Furthermore, with InFO-SoW, the whole wafer has to be processed using one fabrication technology, which may not be optimal, or too expensive for certain designs.</p>
<p style="text-align: center;"><a href="https://www.anandtech.com/show/21372/tsmcs-system-on-wafer-platform-goes-3d-cow-sow"><img alt="" src="https://images.anandtech.com/doci/21372/tsmc-sow-cowos-evolution-575px.png" /></a></p>
<p>So, with its next-generation system-on-wafer platform, TSMC plans to bring together two of its packaging technologies: InFO-SoW and System on Integrated Chips (SoIC), which will allow it to stack memory or logic on top of a system-on-wafer using its Chip-on-Wafer (CoW) method. The CoW-SoW technology, which the company announced at its North American Technology Symposium, will be ready for mass production in 2027.</p>
<p>For now, TSMC is mostly talking about wedding wafer scale processors with HBM4 memory. And given that HBM4 stacks will feature a 2048-bit interface, its tighter integration with logic is something that the industry is considering.</p>
<p>"So, in the future, using wafer level integrations [will allow] our customers to integrate even more logic and memory together," said Kevin Zhang, Vice President of Business Development at TSMC. "SoW is no longer a fiction, this is something we already work with our customers [on] to produce some of the products already in place. This we think by leveraging our advanced wafer level integration technology, we can provide our customer a very important the path allow them to continue to grow their capability to bring in more computation, more energy efficient computation, to their AI cluster or [supercomputer]."</p>
<h3><strong>Related Reading</strong></h3>
<ul>
<li><a href="https://www.anandtech.com/show/21369/tsmcs-16nm-technology-announced-for-late-2026-a16-with-super-power-rail-bspdn">TSMC's 1.6nm Technology Announced for Late 2026: A16 with "Super Power Rail" Backside Power</a></li>
<li><a href="https://www.anandtech.com/show/21370/tsmc-2nm-update-n2-in-2025-n2p-loses-bspdn-nanoflex-optimizations">TSMC 2nm Update: N2 In 2025, N2P Loses Backside Power, and NanoFlex Brings Optimal Cells</a></li>
<li><a href="https://www.anandtech.com/show/21371/tsmc-preps-lower-cost-4nm-n4c-process-for-2025">TSMC Preps Cheaper 4nm N4C Process For 2025, Aiming For 8.5% Cost Reduction</a></li>
</ul>
</p> Semiconductors](https://lh3.googleusercontent.com/blogger_img_proxy/AEn0k_uiNB_ArfyIU7LKUY66DfY8r2SOJsRs57iFMGs2tjRZfeJMXhaONvwVWL4ba2cXXsr2uyfXpVixIL_As26BPfc9HOcl1H-CoCudyQSlRhJBHhlocfWB1Y4YJ963dvQUOPpND17K69TsPJPNNSk=w72-h72-p-k-no-nu)
MiTAC/Tyan Shows Off Motherboard and Servers for Intel's Xeon 6 CPUs
Later this year Intel is set to introduce its Xeon 6-branded processors, codenamed Granite Rapids (6x00P) and Sierra Forest (6x00E). And with it will come a new slew of server motherboards and pre-built server platforms to go with it. On the latter note, this will be the first generation where Intel won't be offering any pre-builts of its own, after selling that business off to MiTAC last year.
To that end, MiTAC and its subsidiary Tyan were at this year's event to demonstrate what they've been up to since acquiring Intel's server business unit, as well as to show off the server platforms they're developing for the Xeon 6 family. Altogether, the companies had two server platforms on display – a compact 2S system, and a larger 2S system with significant expansion capabilities – as well as a pair of single-socket designs from Tyan.
The most basic platform that MiTAC had to show is their TX86-E7148 (Katmai Pass), a half-width 1U system that's the successor to Intel's D50DNP platform. Katmai Pass has two CPU sockets, supports up to 2 TB of DDR5-6400 RDIMMs over 16 slots (8 per CPU), and has two low-profile PCIe 5.0 x16 slots. Like its predecessor, this platform is aimed at mainstream servers that do not need a lot of storage or room to house bulky add-in cards like AI accelerators.
The company's other platform is TX77A-E7142 (Deer Creek Pass), a considerably more serious offering that replaces Intel's M50FCP platform. This board can house up to 4 TB of DDR5-6400 RDIMMs over 32 slots (16 per CPU with 2DPC), four PCIe 5.0 x16 slots, one PCIe 5.0 x8 slot, two OCP 3.0 slots, and 24 hot-swap U.2 bays. Deer Creek Pass can be used both for general-purpose workloads, high-performance storage, as well as workloads that require GPUs or other special-purpose accelerators.
Meanwhile Tyan had the single-socket Thunder CX GC73A-B5660 on display. That system supports up to 2 TB of DDR5-6400 memory over 16 RDIMMs and offers two PCIe 5.0 x16 slots, one PCIe 4.0 x4 M.2 slot, two OCP 3.0 slots, and 12 hot-swappable U.2 drive bays.
Finally, Tyan's Thunder HX S5662 is an HPC server board specifically designed to house multiple AI accelerators and other large PCIe cards. This board supports one Xeon 6 6700 processor, up to 1 TB of memory over eight DDR5-6400 RDIMMs, and has five tradiitonal PCIe 5.0 x16 slots as well as two PCIe 5.0 x2 M.2 slots for storage.
MiTAC is expected to start shipments of these new Xeon 6 motherboards in the coming months, as Intel rolls out its next-generation datacenter CPUs. Pricing of these platforms is unknown for now, but expect it to be comparable to... Servers
Kioxia Details BiCS 8 NAND at FMS 2024: 218 Layers With Superior Scaling
Kioxia's booth at FMS 2024 was a busy one with multiple technology demonstrations keeping visitors occupied. A walk-through of the BiCS 8 manufacturing process was the first to grab my attention. Kioxia and Western Digital announced the sampling of BiCS 8 in March 2023. We had touched briefly upon its CMOS Bonded Array (CBA) scheme in our coverage of Kioxial's 2Tb QLC NAND device and coverage of Western Digital's 128 TB QLC enterprise SSD proof-of-concept demonstration. At Kioxia's booth, we got more insights.
Traditionally, fabrication of flash chips involved placement of the associate logic circuitry (CMOS process) around the periphery of the flash array. The process then moved on to putting the CMOS under the cell array, but the wafer development process was serialized with the CMOS logic getting fabricated first followed by the cell array on top. However, this has some challenges because the cell array requires a high-temperature processing step to ensure higher reliability that can be detrimental to the health of the CMOS logic. Thanks to recent advancements in wafer bonding techniques, the new CBA process allows the CMOS wafer and cell array wafer to be processed independently in parallel and then pieced together, as shown in the models above.
The BiCS 8 3D NAND incorporates 218 layers, compared to 112 layers in BiCS 5 and 162 layers in BiCS 6. The company decided to skip over BiCS 7 (or, rather, it was probably a short-lived generation meant as an internal test vehicle). The generation retains the four-plane charge trap structure of BiCS 6. In its TLC avatar, it is available as a 1 Tbit device. The QLC version is available in two capacities - 1 Tbit and 2 Tbit.
Kioxia also noted that while the number of layers (218) doesn't compare favorably with the latest layer counts from the competition, its lateral scaling / cell shrinkage has enabled it to be competitive in terms of bit density as well as operating speeds (3200 MT/s). For reference, the latest shipping NAND from Micron - the G9 - has 276 layers with a bit density in TLC mode of 21 Gbit/mm2, and operates at up to 3600 MT/s. However, its 232L NAND operates only up to 2400 MT/s and has a bit density of 14.6 Gbit/mm2.
It must be noted that the CBA hybrid bonding process has advantages over the current processes used by other vendors - including Micron's CMOS under array (CuA) and SK hynix's 4D PUC (periphery-under-chip) developed in the late 2010s. It is expected that other NAND vendors will also move eventually to some variant of the hybrid bonding scheme used by Kioxia.
Storage
CXL Gathers Momentum at FMS 2024 
The CXL consortium has had a regular presence at FMS (which rechristened itself from 'Flash Memory Summit' to the 'Future of Memory and Storage' this year). Back at FMS 2022, the company had announced v3.0 of the CXL specifications. This was followed by CXL 3.1's introduction at Supercomputing 2023. Having started off as a host to device interconnect standard, it had slowly subsumed other competing standards such as OpenCAPI and Gen-Z. As a result, the specifications started to encompass a wide variety of use-cases by building a protocol on top of the the ubiquitous PCIe expansion bus. The CXL consortium comprises of heavyweights such as AMD and Intel, as well as a large number of startup companies attempting to play in different segments on the device side. At FMS 2024, CXL had a prime position in the booth demos of many vendors.
The migration of server platforms from DDR4 to DDR5, along with the rise of workloads demanding large RAM capacity (but not particularly sensitive to either memory bandwidth or latency), has opened up memory expansion modules as one of the first set of widely available CXL devices. Over the last couple of years, we have had product announcements from Samsung and Micron in this area.
SK hynix CMM-DDR5 CXL Memory Module and HMSDK
At FMS 2024, SK hynix was showing off their DDR5-based CMM-DDR5 CXL memory module with a 128 GB capacity. The company was also detailing their associated Heterogeneous Memory Software Development Kit (HMSDK) - a set of libraries and tools at both the kernel and user levels aimed at increasing the ease of use of CXL memory. This is achieved in part by considering the memory pyramid / hierarchy and relocating the data between the server's main memory (DRAM) and the CXL device based on usage frequency.
The CMM-DDR5 CXL memory module comes in the SDFF form-factor (E3.S 2T) with a PCIe 3.0 x8 host interface. The internal memory is based on 1α technology DRAM, and the device promises DDR5-class bandwidth and latency within a single NUMA hop. As these memory modules are meant to be used in datacenters and enterprises, the firmware includes features for RAS (reliability, availability, and serviceability) along with secure boot and other management features.
SK hynix was also demonstrating Niagara 2.0 - a hardware solution (currently based on FPGAs) to enable memory pooling and sharing - i.e, connecting multiple CXL memories to allow different hosts (CPUs and GPUs) to optimally share their capacity. The previous version only allowed capacity sharing, but the latest version enables sharing of data also. SK hynix had presented these solutions at the CXL DevCon 2024 earlier this year, but some progress seems to have been made in finalizing the specifications of the CMM-DDR5 at FMS 2024.
Microchip and Micron Demonstrate CZ120 CXL Memory Expansion Module
Micron had unveiled the CZ120 CXL Memory Expansion Module last year based on the Microchip SMC 2000 series CXL memory controller. At FMS 2024, Micron and Microchip had a demonstration of the module on a Granite Rapids server.
Additional insights into the SMC 2000 controller were also provided.
The CXL memory controller also incorporates DRAM die failure handling, and Microchip also provides diagnostics and debug tools to analyze failed modules. The memory controller also supports ECC, which forms part of the enterprise... Storage
TSMCs Q2'24 Results: Best Quarter Ever as HPC Revenue Share Exceeds 52% on AI Demand 
Taiwan Semiconductor Manufacturing Co. this week said its revenue for the second quarter 2024 reached $20.82 billion, making it the company's best quarter (at least in dollars) to date. TSMC's high-performance computing (HPC) platform revenue share exceeded 52% for the first time in many years due to demand for AI processors and rebound of the PC market.
TSMC earned $20.82 billion USD in revenue for the second quarter of 2024, a 32.8% year-over-year increase and a 10.3% increase from the previous quarter. Perhaps more remarkable, $20.82 billion is a higher result than the company posted Q3 2022 ($20.23 billion), the foundry's best quarter to date. Otherwise, in terms of profitability, TSMC booked $7.59 billion in net income for the quarter, for a gross margin of 53.2%. This is a decent bit off of TSMC's record margin of 60.4% (Q3'22), and comes as the company is still in the process of further ramping its N3 (3nm-class) fab lines.
When it comes to wafer revenue share, the company's N3 process technologies (3nm-class) accounted for 15% of wafer revenue in Q2 (up from 9% in the previous quarter), N5 production nodes (4nm and 5nm-classes) commanded 35% of TSMC's earnings in the second quarter (down from 37% in Q1 2024), and N7 fabrication processes (6nm and 7nm-classes) accounted for 17% of the foundry's wafer revenue in the second quarter of 2024 (down from 19% in Q1 2024). Advanced technologies all together (N3, N5, N7) accounted for 67% of total wafer revenue.
"Our business in the second quarter was supported by strong demand for our industry-leading 3nm and 5nm technologies, partially offset by continued smartphone seasonality," said Wendell Huang, Senior VP and Chief Financial Officer of TSMC. "Moving into third quarter 2024, we expect our business to be supported by strong smartphone and AI-related demand for our leading-edge process technologies."
TSMC usually starts ramping up production for Apple's fall products (e.g. iPhone) in the second quarter of the year, so it is not surprising that revenue share of N3 increased in Q2 of this year. Yet, keeping in mind that TSMC's revenue in general increased by 10.3% QoQ, the company's shipments of processors made on N5 and N7 nodes are showing resilience as demand for AI and HPC processors is high across the industry.
Speaking of TSMC's HPC sales, HPC platform sales accounted for 52% of TSMC's revenue for the first time in many years. The world's largest contract maker of chips produces many types of chips that get placed under the HPC umbrella, including AI processors, CPUs for client PCs, and system-on-chips (SoCs) for consoles, just to name a few. Yet, in this case TSMC attributes demand for AI processors as the main driver for its HPC success.
As for smartphone platform revenue, its share dropped to 33% as actual sales declined by 1% quarter-over-quarter. All other segments grew by 5% to 20%.
For the third quarter of 2024, TSMC expects revenue between US$22.4 billion and US$23.2 billion, with a gross profit margin of 53.5% to 55.5% and an operating profit margin of 42.5% to 44.5%. The company's sales are projected to be driven by strong demand for leading-edge process technologies as well as increased demand for AI and smartphones-related applications.
Semiconductors
TSMC's 1.6nm Technology Announced for Late 2026: A16 with "Super Power Rail" Backside Power With the arrival of spring comes showers, flowers, and in the technology industry, TSMC's annual technology symposium series. With customers spread all around the world, the Taiwanese pure play foundry has adopted an interesting strategy for updating its customers on its fab plans, holding a series of symposiums from Silicon Valley to Shanghai. Kicking off the series every year – and giving us our first real look at TSMC's updated foundry plans for the coming years – is the Santa Clara stop, where yesterday the company has detailed several new technologies, ranging from more advanced lithography processes to massive, wafer-scale chip packing options.
Today we're publishing several stories based on TSMC's different offerings, starting with TSMC's marquee announcement: their A16 process node. Meanwhile, for the rest of our symposium stories, please be sure to check out the related reading below, and check back for additional stories.
- TSMC's 1.6nm Technology Announced for Late 2026: A16 with "Super Power Rail" Backside Power
- TSMC 2nm Update: N2 In 2025, N2P Loses Backside Power, and NanoFlex Brings Optimal Cells
- TSMC Preps Cheaper 4nm N4C Process For 2025, Aiming For 8.5% Cost Reduction
- TSMC's System-on-Wafer Platform Goes 3D: CoW-SoW Stacks Up the Chips
- TSMC Jumps Into Silicon Photonics, Lays Out Roadmap For 12.8 Tbps COUPE On-Package Interconnect
- TSMC Readies 8x Reticle Super Carrier Interposer For Next-Gen Chips Twice as Large As Today's
Headlining its Silicon Valley stop, TSMC announced its first 'angstrom-class' process technology: A16. Following a production schedule shift that has seen backside power delivery network technology (BSPDN) removed from TSMC's N2P node, the new 1.6nm-class production node will now be the first process to introduce BSPDN to TSMC's chipmaking repertoire. With the addition of backside power capabilities and other improvements, TSMC expects A16 to offer significantly improved performance and energy efficiency compared to TSMC's N2P fabrication process. It will be available to TSMC's clients starting H2 2026.
TSMC A16: Combining GAAFET With Backside Power Delivery
At a high level, TSMC's A16 process technology will rely on gate-all-around (GAAFET) nanosheet transistors and will feature a backside power rail, which will both improve power delivery and moderately increase transistor density. Compared to TSMC's N2P fabrication process, A16 is expected to offer a performance improvement of 8% to 10% at the same voltage and complexity, or a 15% to 20% reduction in power consumption at the same frequency and transistor count. TSMC is not listing detailed density parameters this far out, but the company says that chip density will increase by 1.07x to 1.10x – keeping in mind that transistor density heavily depends on the type and libraries of transistors used.
The key innovation of TSMC's A16 node, is its Super Power Rail (SPR) backside power delivery network, a first for TSMC. The contract chipmaker claims that A16's SPR is specifically tailored for high-performance computing products that feature both complex signal routes and dense power circuitry.
As noted earlier, with this week's announcement, A16 has now become the launch vehicle for backside power delivery at TSMC. The company was initially slated to offer BSPDN technology with N2P in 2026, but for reasons that aren't entirely clear, the tech has been punted from N2P and moved to A16. TSMC's official timing for N2P in 2023 was always a bit loose, so it's hard to say if this represents much of a practical delay for BSPDN at TSMC. But at the same time, it's important to underscore that A16 isn't just N2P renamed, but rather it will be a di... Semiconductors
![](https://twitter.com/share?url=https://compbuddey.blogspot.com/2024/07/micron-expands-datacenter-dram_18.html&text=Micron Expands Datacenter DRAM Portfolio with MR-DIMMs <p align="center"><a href="https://www.anandtech.com/show/21470/micron-mrdimm-lineup-expands-datacenter-dram-portfolio"><img src="https://images.anandtech.com/doci/21470/micron-mrdimm-carousel_575px.jpg" alt="" /></a></p><p><p>The compute market has always been hungry for memory bandwidth, particularly for high-performance applications in servers and datacenters. In recent years, the explosion in core counts per socket has further accentuated this need. Despite progress in DDR speeds, the available bandwidth per core has unfortunately not seen a corresponding scaling.</p>
<p align="center"><a href="https://www.anandtech.com/show/21470/micron-mrdimm-lineup-expands-datacenter-dram-portfolio"><img alt="" src="https://images.anandtech.com/doci/21470/micron-mrdimm-bw-scaling_575px.png" /></a></p>
<p>The stakeholders in the industry have been attempting to address this by building additional technology on top of existing widely-adopted memory standards. With DDR5, there are currently two technologies attempting to increase the peak bandwidth beyond the official speeds. In late 2022, SK hynix <a href="https://www.anandtech.com/show/18683/sk-hynix-reveals-mcr-dimm-up-to-8gbps-bandwidth-for-hpc">introduced</a> MCR-DIMMs meant for operating with specific Intel server platforms. On the other hand, JEDEC - the standards-setting body - also developed specifications for MR-DIMMs with a similar approach. Both of them build upon existing DDR5 technologies by attempting to combine multiple ranks to improve peak bandwidth and latency.</p>
<h3>How MR-DIMMs Work</h3>
<p>The MR-DIMM standard is conceptually simple - there are multiple ranks of memory modules operating at standard DDR5 speeds with a data buffer in front. The buffer operates at 2x the speed on the host interface side, allowing for essentially double the transfer rates. The challenges obviously lie in being able to operate the logic in the host memory controller at the higher speed and keeping the power consumption / thermals in check.</p>
<p align="center"><a href="https://www.anandtech.com/show/21470/micron-mrdimm-lineup-expands-datacenter-dram-portfolio"><img alt="" src="https://images.anandtech.com/doci/21470/micron-mrdimm-concept_575px.png" /></a></p>
<p>The first version of the JEDEC MR-DIMM standard specifies speeds of 8800 MT/s, with the next generation at 12800 MT/s. JEDEC also has a clear roadmap for this technology, keeping it in sync with the the improvements in the DDR5 standard.</p>
<h3>Micron MR-DIMMs - Bandwidth and Capacity Plays</h3>
<p>Micron and Intel have been working closely in the last few quarters to bring their former's first-generation MR-DIMM lineup to the market. Intel's Xeon 6 Family with P-Cores (Granite Rapids) is the first platform to bring MR-DIMM support at 8800 MT/s on the host side. Micron's standard-sized MR-DIMMs (suitable for 1U servers) and TFF (tall form-factor) MR-DIMMs (for 2U+ servers) have been qualified for use with the same.</p>
<p align="center"><a href="https://www.anandtech.com/show/21470/micron-mrdimm-lineup-expands-datacenter-dram-portfolio"><img alt="" src="https://images.anandtech.com/doci/21470/micron-mrdimm-lineup-intro_575px.png" /></a></p>
<p>The benefits offered by MR-DIMMs are evident from the JEDEC specifications, allowing for increased data rates and system bandwidth, with improvements in latency. On the capacity side, allowing for additional ranks on the modules has enabled Micron to offer a 256 GB capacity point. It must be noted that some vendors are also using TSV (through-silicon vias) technology to to increase the per-package capacity at standard DDR5 speeds, but this adds additional cost and complexity that are largely absent in the MR-DIMM manufacturing process.</p>
<p align="center"><a href="https://www.anandtech.com/show/21470/micron-mrdimm-lineup-expands-datacenter-dram-portfolio"><img alt="" src="https://images.anandtech.com/doci/21470/micron-mrdimm-tff-benefits_575px.png" /></a></p>
<p>The tall form-factor (TFF) MR-DIMMs have a larger surface area compared to the standard-sized ones. For the same airflow configuration, this allows the DIMM to have a better thermal profile. This provides benefits for energy efficiency as well by reducing the possibility of thermal throttling.</p>
<p align="center"><a href="https://www.anandtech.com/show/21470/micron-mrdimm-lineup-expands-datacenter-dram-portfolio"><img alt="" src="https://images.anandtech.com/doci/21470/micron-mrdimm-lineup-skus_575px.png" /></a></p>
<p>Micron is launching a comprehensive lineup of MR-DIMMs in both standard and tall form-factors today, with multiple DRAM densities and speed options as noted above.</p>
<h3>MRDIMM Benefits - Intel Granite Rapids Gets a Performance Boost</h3>
<p>Micron and Intel hosted a media / analyst briefing recently to demonstrate the benefits of MR-DIMMs for Xeon 6 with P-Cores (Granite Rapids). Using a 2P configuration with 96-core Xeon 6 processors, benchmarks for different ... Memory){kind=link}
![](https://www.pinterest.com/pin/create/button/?url=https://compbuddey.blogspot.com/2024/07/micron-expands-datacenter-dram_18.html&media=https://lh3.googleusercontent.com/blogger_img_proxy/AEn0k_uJFYHwH-EC5efHsJsVQhgXCaKDWQ6ws_dmGQgy8cVjNQBRlU3zv6vSyKdamlkndC1rlrCnHwGctk5CB38-y9A3kDw8SS5dzeQwbYpmyGLFr_cB6xsL5sQECbf610qtR17avdNKLwtC2Z4b&description=Micron Expands Datacenter DRAM Portfolio with MR-DIMMs <p align="center"><a href="https://www.anandtech.com/show/21470/micron-mrdimm-lineup-expands-datacenter-dram-portfolio"><img src="https://images.anandtech.com/doci/21470/micron-mrdimm-carousel_575px.jpg" alt="" /></a></p><p><p>The compute market has always been hungry for memory bandwidth, particularly for high-performance applications in servers and datacenters. In recent years, the explosion in core counts per socket has further accentuated this need. Despite progress in DDR speeds, the available bandwidth per core has unfortunately not seen a corresponding scaling.</p>
<p align="center"><a href="https://www.anandtech.com/show/21470/micron-mrdimm-lineup-expands-datacenter-dram-portfolio"><img alt="" src="https://images.anandtech.com/doci/21470/micron-mrdimm-bw-scaling_575px.png" /></a></p>
<p>The stakeholders in the industry have been attempting to address this by building additional technology on top of existing widely-adopted memory standards. With DDR5, there are currently two technologies attempting to increase the peak bandwidth beyond the official speeds. In late 2022, SK hynix <a href="https://www.anandtech.com/show/18683/sk-hynix-reveals-mcr-dimm-up-to-8gbps-bandwidth-for-hpc">introduced</a> MCR-DIMMs meant for operating with specific Intel server platforms. On the other hand, JEDEC - the standards-setting body - also developed specifications for MR-DIMMs with a similar approach. Both of them build upon existing DDR5 technologies by attempting to combine multiple ranks to improve peak bandwidth and latency.</p>
<h3>How MR-DIMMs Work</h3>
<p>The MR-DIMM standard is conceptually simple - there are multiple ranks of memory modules operating at standard DDR5 speeds with a data buffer in front. The buffer operates at 2x the speed on the host interface side, allowing for essentially double the transfer rates. The challenges obviously lie in being able to operate the logic in the host memory controller at the higher speed and keeping the power consumption / thermals in check.</p>
<p align="center"><a href="https://www.anandtech.com/show/21470/micron-mrdimm-lineup-expands-datacenter-dram-portfolio"><img alt="" src="https://images.anandtech.com/doci/21470/micron-mrdimm-concept_575px.png" /></a></p>
<p>The first version of the JEDEC MR-DIMM standard specifies speeds of 8800 MT/s, with the next generation at 12800 MT/s. JEDEC also has a clear roadmap for this technology, keeping it in sync with the the improvements in the DDR5 standard.</p>
<h3>Micron MR-DIMMs - Bandwidth and Capacity Plays</h3>
<p>Micron and Intel have been working closely in the last few quarters to bring their former's first-generation MR-DIMM lineup to the market. Intel's Xeon 6 Family with P-Cores (Granite Rapids) is the first platform to bring MR-DIMM support at 8800 MT/s on the host side. Micron's standard-sized MR-DIMMs (suitable for 1U servers) and TFF (tall form-factor) MR-DIMMs (for 2U+ servers) have been qualified for use with the same.</p>
<p align="center"><a href="https://www.anandtech.com/show/21470/micron-mrdimm-lineup-expands-datacenter-dram-portfolio"><img alt="" src="https://images.anandtech.com/doci/21470/micron-mrdimm-lineup-intro_575px.png" /></a></p>
<p>The benefits offered by MR-DIMMs are evident from the JEDEC specifications, allowing for increased data rates and system bandwidth, with improvements in latency. On the capacity side, allowing for additional ranks on the modules has enabled Micron to offer a 256 GB capacity point. It must be noted that some vendors are also using TSV (through-silicon vias) technology to to increase the per-package capacity at standard DDR5 speeds, but this adds additional cost and complexity that are largely absent in the MR-DIMM manufacturing process.</p>
<p align="center"><a href="https://www.anandtech.com/show/21470/micron-mrdimm-lineup-expands-datacenter-dram-portfolio"><img alt="" src="https://images.anandtech.com/doci/21470/micron-mrdimm-tff-benefits_575px.png" /></a></p>
<p>The tall form-factor (TFF) MR-DIMMs have a larger surface area compared to the standard-sized ones. For the same airflow configuration, this allows the DIMM to have a better thermal profile. This provides benefits for energy efficiency as well by reducing the possibility of thermal throttling.</p>
<p align="center"><a href="https://www.anandtech.com/show/21470/micron-mrdimm-lineup-expands-datacenter-dram-portfolio"><img alt="" src="https://images.anandtech.com/doci/21470/micron-mrdimm-lineup-skus_575px.png" /></a></p>
<p>Micron is launching a comprehensive lineup of MR-DIMMs in both standard and tall form-factors today, with multiple DRAM densities and speed options as noted above.</p>
<h3>MRDIMM Benefits - Intel Granite Rapids Gets a Performance Boost</h3>
<p>Micron and Intel hosted a media / analyst briefing recently to demonstrate the benefits of MR-DIMMs for Xeon 6 with P-Cores (Granite Rapids). Using a 2P configuration with 96-core Xeon 6 processors, benchmarks for different ... Memory){kind=link}
![](https://web.whatsapp.com/send?text=Micron Expands Datacenter DRAM Portfolio with MR-DIMMs <p align="center"><a href="https://www.anandtech.com/show/21470/micron-mrdimm-lineup-expands-datacenter-dram-portfolio"><img src="https://images.anandtech.com/doci/21470/micron-mrdimm-carousel_575px.jpg" alt="" /></a></p><p><p>The compute market has always been hungry for memory bandwidth, particularly for high-performance applications in servers and datacenters. In recent years, the explosion in core counts per socket has further accentuated this need. Despite progress in DDR speeds, the available bandwidth per core has unfortunately not seen a corresponding scaling.</p>
<p align="center"><a href="https://www.anandtech.com/show/21470/micron-mrdimm-lineup-expands-datacenter-dram-portfolio"><img alt="" src="https://images.anandtech.com/doci/21470/micron-mrdimm-bw-scaling_575px.png" /></a></p>
<p>The stakeholders in the industry have been attempting to address this by building additional technology on top of existing widely-adopted memory standards. With DDR5, there are currently two technologies attempting to increase the peak bandwidth beyond the official speeds. In late 2022, SK hynix <a href="https://www.anandtech.com/show/18683/sk-hynix-reveals-mcr-dimm-up-to-8gbps-bandwidth-for-hpc">introduced</a> MCR-DIMMs meant for operating with specific Intel server platforms. On the other hand, JEDEC - the standards-setting body - also developed specifications for MR-DIMMs with a similar approach. Both of them build upon existing DDR5 technologies by attempting to combine multiple ranks to improve peak bandwidth and latency.</p>
<h3>How MR-DIMMs Work</h3>
<p>The MR-DIMM standard is conceptually simple - there are multiple ranks of memory modules operating at standard DDR5 speeds with a data buffer in front. The buffer operates at 2x the speed on the host interface side, allowing for essentially double the transfer rates. The challenges obviously lie in being able to operate the logic in the host memory controller at the higher speed and keeping the power consumption / thermals in check.</p>
<p align="center"><a href="https://www.anandtech.com/show/21470/micron-mrdimm-lineup-expands-datacenter-dram-portfolio"><img alt="" src="https://images.anandtech.com/doci/21470/micron-mrdimm-concept_575px.png" /></a></p>
<p>The first version of the JEDEC MR-DIMM standard specifies speeds of 8800 MT/s, with the next generation at 12800 MT/s. JEDEC also has a clear roadmap for this technology, keeping it in sync with the the improvements in the DDR5 standard.</p>
<h3>Micron MR-DIMMs - Bandwidth and Capacity Plays</h3>
<p>Micron and Intel have been working closely in the last few quarters to bring their former's first-generation MR-DIMM lineup to the market. Intel's Xeon 6 Family with P-Cores (Granite Rapids) is the first platform to bring MR-DIMM support at 8800 MT/s on the host side. Micron's standard-sized MR-DIMMs (suitable for 1U servers) and TFF (tall form-factor) MR-DIMMs (for 2U+ servers) have been qualified for use with the same.</p>
<p align="center"><a href="https://www.anandtech.com/show/21470/micron-mrdimm-lineup-expands-datacenter-dram-portfolio"><img alt="" src="https://images.anandtech.com/doci/21470/micron-mrdimm-lineup-intro_575px.png" /></a></p>
<p>The benefits offered by MR-DIMMs are evident from the JEDEC specifications, allowing for increased data rates and system bandwidth, with improvements in latency. On the capacity side, allowing for additional ranks on the modules has enabled Micron to offer a 256 GB capacity point. It must be noted that some vendors are also using TSV (through-silicon vias) technology to to increase the per-package capacity at standard DDR5 speeds, but this adds additional cost and complexity that are largely absent in the MR-DIMM manufacturing process.</p>
<p align="center"><a href="https://www.anandtech.com/show/21470/micron-mrdimm-lineup-expands-datacenter-dram-portfolio"><img alt="" src="https://images.anandtech.com/doci/21470/micron-mrdimm-tff-benefits_575px.png" /></a></p>
<p>The tall form-factor (TFF) MR-DIMMs have a larger surface area compared to the standard-sized ones. For the same airflow configuration, this allows the DIMM to have a better thermal profile. This provides benefits for energy efficiency as well by reducing the possibility of thermal throttling.</p>
<p align="center"><a href="https://www.anandtech.com/show/21470/micron-mrdimm-lineup-expands-datacenter-dram-portfolio"><img alt="" src="https://images.anandtech.com/doci/21470/micron-mrdimm-lineup-skus_575px.png" /></a></p>
<p>Micron is launching a comprehensive lineup of MR-DIMMs in both standard and tall form-factors today, with multiple DRAM densities and speed options as noted above.</p>
<h3>MRDIMM Benefits - Intel Granite Rapids Gets a Performance Boost</h3>
<p>Micron and Intel hosted a media / analyst briefing recently to demonstrate the benefits of MR-DIMMs for Xeon 6 with P-Cores (Granite Rapids). Using a 2P configuration with 96-core Xeon 6 processors, benchmarks for different ... Memory | https://compbuddey.blogspot.com/2024/07/micron-expands-datacenter-dram_18.html){kind=link}
![](mailto:?subject=Micron Expands Datacenter DRAM Portfolio with MR-DIMMs <p align="center"><a href="https://www.anandtech.com/show/21470/micron-mrdimm-lineup-expands-datacenter-dram-portfolio"><img src="https://images.anandtech.com/doci/21470/micron-mrdimm-carousel_575px.jpg" alt="" /></a></p><p><p>The compute market has always been hungry for memory bandwidth, particularly for high-performance applications in servers and datacenters. In recent years, the explosion in core counts per socket has further accentuated this need. Despite progress in DDR speeds, the available bandwidth per core has unfortunately not seen a corresponding scaling.</p>
<p align="center"><a href="https://www.anandtech.com/show/21470/micron-mrdimm-lineup-expands-datacenter-dram-portfolio"><img alt="" src="https://images.anandtech.com/doci/21470/micron-mrdimm-bw-scaling_575px.png" /></a></p>
<p>The stakeholders in the industry have been attempting to address this by building additional technology on top of existing widely-adopted memory standards. With DDR5, there are currently two technologies attempting to increase the peak bandwidth beyond the official speeds. In late 2022, SK hynix <a href="https://www.anandtech.com/show/18683/sk-hynix-reveals-mcr-dimm-up-to-8gbps-bandwidth-for-hpc">introduced</a> MCR-DIMMs meant for operating with specific Intel server platforms. On the other hand, JEDEC - the standards-setting body - also developed specifications for MR-DIMMs with a similar approach. Both of them build upon existing DDR5 technologies by attempting to combine multiple ranks to improve peak bandwidth and latency.</p>
<h3>How MR-DIMMs Work</h3>
<p>The MR-DIMM standard is conceptually simple - there are multiple ranks of memory modules operating at standard DDR5 speeds with a data buffer in front. The buffer operates at 2x the speed on the host interface side, allowing for essentially double the transfer rates. The challenges obviously lie in being able to operate the logic in the host memory controller at the higher speed and keeping the power consumption / thermals in check.</p>
<p align="center"><a href="https://www.anandtech.com/show/21470/micron-mrdimm-lineup-expands-datacenter-dram-portfolio"><img alt="" src="https://images.anandtech.com/doci/21470/micron-mrdimm-concept_575px.png" /></a></p>
<p>The first version of the JEDEC MR-DIMM standard specifies speeds of 8800 MT/s, with the next generation at 12800 MT/s. JEDEC also has a clear roadmap for this technology, keeping it in sync with the the improvements in the DDR5 standard.</p>
<h3>Micron MR-DIMMs - Bandwidth and Capacity Plays</h3>
<p>Micron and Intel have been working closely in the last few quarters to bring their former's first-generation MR-DIMM lineup to the market. Intel's Xeon 6 Family with P-Cores (Granite Rapids) is the first platform to bring MR-DIMM support at 8800 MT/s on the host side. Micron's standard-sized MR-DIMMs (suitable for 1U servers) and TFF (tall form-factor) MR-DIMMs (for 2U+ servers) have been qualified for use with the same.</p>
<p align="center"><a href="https://www.anandtech.com/show/21470/micron-mrdimm-lineup-expands-datacenter-dram-portfolio"><img alt="" src="https://images.anandtech.com/doci/21470/micron-mrdimm-lineup-intro_575px.png" /></a></p>
<p>The benefits offered by MR-DIMMs are evident from the JEDEC specifications, allowing for increased data rates and system bandwidth, with improvements in latency. On the capacity side, allowing for additional ranks on the modules has enabled Micron to offer a 256 GB capacity point. It must be noted that some vendors are also using TSV (through-silicon vias) technology to to increase the per-package capacity at standard DDR5 speeds, but this adds additional cost and complexity that are largely absent in the MR-DIMM manufacturing process.</p>
<p align="center"><a href="https://www.anandtech.com/show/21470/micron-mrdimm-lineup-expands-datacenter-dram-portfolio"><img alt="" src="https://images.anandtech.com/doci/21470/micron-mrdimm-tff-benefits_575px.png" /></a></p>
<p>The tall form-factor (TFF) MR-DIMMs have a larger surface area compared to the standard-sized ones. For the same airflow configuration, this allows the DIMM to have a better thermal profile. This provides benefits for energy efficiency as well by reducing the possibility of thermal throttling.</p>
<p align="center"><a href="https://www.anandtech.com/show/21470/micron-mrdimm-lineup-expands-datacenter-dram-portfolio"><img alt="" src="https://images.anandtech.com/doci/21470/micron-mrdimm-lineup-skus_575px.png" /></a></p>
<p>Micron is launching a comprehensive lineup of MR-DIMMs in both standard and tall form-factors today, with multiple DRAM densities and speed options as noted above.</p>
<h3>MRDIMM Benefits - Intel Granite Rapids Gets a Performance Boost</h3>
<p>Micron and Intel hosted a media / analyst briefing recently to demonstrate the benefits of MR-DIMMs for Xeon 6 with P-Cores (Granite Rapids). Using a 2P configuration with 96-core Xeon 6 processors, benchmarks for different ... Memory&body=https://compbuddey.blogspot.com/2024/07/micron-expands-datacenter-dram_18.html){kind=link}
Lorem Ipsum is simply dummy text of the printing and typesetting industry. Lorem Ipsum has been the industry's.
MiTAC/Tyan Shows Off Motherboard and Servers for Intel's Xeon 6 CPUs
Later this year Intel is set to introduce its Xeon 6-branded processors, codenamed Granite Rapids (6x00P) and Sierra Forest (6x00E). And with it will come a new slew of server motherboards and pre-built server platforms to go with it. On the latter note, this will be the first generation where Intel won't be offering any pre-builts of its own, after selling that business off to MiTAC last year.
To that end, MiTAC and its subsidiary Tyan were at this year's event to demonstrate what they've been up to since acquiring Intel's server business unit, as well as to show off the server platforms they're developing for the Xeon 6 family. Altogether, the companies had two server platforms on display – a compact 2S system, and a larger 2S system with significant expansion capabilities – as well as a pair of single-socket designs from Tyan.
The most basic platform that MiTAC had to show is their TX86-E7148 (Katmai Pass), a half-width 1U system that's the successor to Intel's D50DNP platform. Katmai Pass has two CPU sockets, supports up to 2 TB of DDR5-6400 RDIMMs over 16 slots (8 per CPU), and has two low-profile PCIe 5.0 x16 slots. Like its predecessor, this platform is aimed at mainstream servers that do not need a lot of storage or room to house bulky add-in cards like AI accelerators.
The company's other platform is TX77A-E7142 (Deer Creek Pass), a considerably more serious offering that replaces Intel's M50FCP platform. This board can house up to 4 TB of DDR5-6400 RDIMMs over 32 slots (16 per CPU with 2DPC), four PCIe 5.0 x16 slots, one PCIe 5.0 x8 slot, two OCP 3.0 slots, and 24 hot-swap U.2 bays. Deer Creek Pass can be used both for general-purpose workloads, high-performance storage, as well as workloads that require GPUs or other special-purpose accelerators.
Meanwhile Tyan had the single-socket Thunder CX GC73A-B5660 on display. That system supports up to 2 TB of DDR5-6400 memory over 16 RDIMMs and offers two PCIe 5.0 x16 slots, one PCIe 4.0 x4 M.2 slot, two OCP 3.0 slots, and 12 hot-swappable U.2 drive bays.
Finally, Tyan's Thunder HX S5662 is an HPC server board specifically designed to house multiple AI accelerators and other large PCIe cards. This board supports one Xeon 6 6700 processor, up to 1 TB of memory over eight DDR5-6400 RDIMMs, and has five tradiitonal PCIe 5.0 x16 slots as well as two PCIe 5.0 x2 M.2 slots for storage.
MiTAC is expected to start shipments of these new Xeon 6 motherboards in the coming months, as Intel rolls out its next-generation datacenter CPUs. Pricing of these platforms is unknown for now, but expect it to be comparable to... Servers
Kioxia Details BiCS 8 NAND at FMS 2024: 218 Layers With Superior Scaling
Kioxia's booth at FMS 2024 was a busy one with multiple technology demonstrations keeping visitors occupied. A walk-through of the BiCS 8 manufacturing process was the first to grab my attention. Kioxia and Western Digital announced the sampling of BiCS 8 in March 2023. We had touched briefly upon its CMOS Bonded Array (CBA) scheme in our coverage of Kioxial's 2Tb QLC NAND device and coverage of Western Digital's 128 TB QLC enterprise SSD proof-of-concept demonstration. At Kioxia's booth, we got more insights.
Traditionally, fabrication of flash chips involved placement of the associate logic circuitry (CMOS process) around the periphery of the flash array. The process then moved on to putting the CMOS under the cell array, but the wafer development process was serialized with the CMOS logic getting fabricated first followed by the cell array on top. However, this has some challenges because the cell array requires a high-temperature processing step to ensure higher reliability that can be detrimental to the health of the CMOS logic. Thanks to recent advancements in wafer bonding techniques, the new CBA process allows the CMOS wafer and cell array wafer to be processed independently in parallel and then pieced together, as shown in the models above.
The BiCS 8 3D NAND incorporates 218 layers, compared to 112 layers in BiCS 5 and 162 layers in BiCS 6. The company decided to skip over BiCS 7 (or, rather, it was probably a short-lived generation meant as an internal test vehicle). The generation retains the four-plane charge trap structure of BiCS 6. In its TLC avatar, it is available as a 1 Tbit device. The QLC version is available in two capacities - 1 Tbit and 2 Tbit.
Kioxia also noted that while the number of layers (218) doesn't compare favorably with the latest layer counts from the competition, its lateral scaling / cell shrinkage has enabled it to be competitive in terms of bit density as well as operating speeds (3200 MT/s). For reference, the latest shipping NAND from Micron - the G9 - has 276 layers with a bit density in TLC mode of 21 Gbit/mm2, and operates at up to 3600 MT/s. However, its 232L NAND operates only up to 2400 MT/s and has a bit density of 14.6 Gbit/mm2.
It must be noted that the CBA hybrid bonding process has advantages over the current processes used by other vendors - including Micron's CMOS under array (CuA) and SK hynix's 4D PUC (periphery-under-chip) developed in the late 2010s. It is expected that other NAND vendors will also move eventually to some variant of the hybrid bonding scheme used by Kioxia.
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