Among the packed field of PC hardware manufacturers, Lian Li is a company that arguably shouldn't even need an introduction. The quirky company has developed a devout following thanks to its focus on premium-quality aluminum computer cases that, more often that not, and come with in some rather unique designs. Over the years, the company has developed a solid reputation for its meticulous craftsmanship, durability, and elegant aesthetics. And consequently, when the company made the decision to expand beyond aluminum cases and in to other PC peripherals, that development attracted quite a bit of attention to see what kind of a touch Lian Li could bring to the rest of the PC ecosystem.
Lian Li's focus on premium products means that the company doesn't really make much in the way of products that are merely basic, and that kind of mentality has extended beyond cases and into the rest of their peripherals. Case in point is the subject of today's review: Lian Li's new all-in-one CPU cooler, the HydroShift LCD 360S AIO. Not content just to make a powerful 360 mm cooler, Lian Li has gone a step above by integrating recesses and other features to help hide the tubing around the cooler, and then for the coup de grace, added a high-quality 2.88-inch IPS display to the pump block.
Overall, this new product marks a significant milestone for Lian Li, as it combines advanced cooling technology with the company's signature aesthetic appeal, making for a cooler that's aimed at both enthusiasts and professional users seeking high-end thermal performance and visual customization. Overall, the HydroShift LCD 360S is undeniably designed first and foremost with aesthetics in mind, but the shiny pump block is backed up with one of the most powerful 360 mm cooler designs on the market today. So Lian Li is throwing everything they have at the new HydroShift coolers.
Overall, the 360S is part of a trio of HydroShift 360 mm coolers the company is launching this summer. All three share a similar design, although with some pump changes and the addition of RGB fan lighting, depending on the specific model, with the 360S effectively serving as the base model.
Cases/Cooling/PSUsSK hynix is set to unveil their first Gen5 consumer NVMe SSD lineup shortly, based on the products at display in their GTC 2024 booth. The Platinum P51 M.2 2280 NVMe SSD will take over flagship duties from the Platinum P41 that has been serving the market for more than a year.
Similar to the Gold P31 and the Platinum P41, the Platinum P51 also uses an in-house SSD controller. The key updates are the move to PCIe Gen5 and the use of SK hynix's 238L TLC NAND. Other details are scarce, and we have reached out for additional information.
| SK hynix Platinum P51 Gen5 NVMe SSD Specifications | ||||
| Capacity | 500 GB | 1 TB | 2 TB | |
| Controller | SK hynix In-House (Alistar) | |||
| NAND Flash | SK hynix 238L 3D TLC NAND at ?? MT/s ('4D' with CMOS circuitry under the NAND as per SK hynix marketing) | |||
| Form-Factor, Interface | M.2-2280, PCIe 5.0 x4, NVMe 2.0 | |||
| Sequential Read | 13500 MB/s | |||
| Sequential Write | 11500 MB/s | |||
| Random Read IOPS | TBD | |||
| Random Write IOPS | TBD | |||
| SLC Caching | Yes | |||
| TCG Opal Encryption | TBD | |||
| Warranty | TBD | |||
| Write Endurance | TBD | TBD | TBD | |
Only the peak sequential access numbers were available at the GTC booth, indicating that the drive's firmware is still undergoing tweaks. It is also unclear how these numbers are going to vary based on capacity. Availability and pricing are also not public yet.
This is a significant launch for the Gen5 consumer SSD market, where the number of available options are quite limited. The Phison E26 controller and Micron's B58R NAND combination is already in its second generation (with the NAND operating at 2400 MT/s in the newest avatar), but other vertically integrated vendors such as Samsung, Western Digital / Kioxia, and SK hynix (till now) are focusing more on the Gen4 market which has much higher adoption.
We will update the piece with additional information once the specifications are officially available.
StorageSamsung this week has unveiled its latest process technologies roadmap at the company's Samsung Foundry Forum (SFF) U.S. The new plan covers the evolution of Samsung's 2nm-class production nodes through 2027, including a process technology with a backside power delivery, re-emphasizing plans to bring out a 1.4nm-class node in 2027, and the introduction of a 'high value' 4nm-class manufacturing tech.
Samsung Foundry's key announcements for today are clearly focused on the its 2nm-class process technologies, which are set to enter production in 2025 and will span to 2027, when the company's 1.4-nm class production node is set to enter the scene. Samsung is also adding (or rather, renaming) another 2nm-class node to their roadmap with SF2, which was previously disclosed by Samsung as SF3P and aimed at high-performance devices.
"We have refined and improved the SF3P, resulting in what we now refer to as SF2," a Samsung spokesperson told AnandTech. "This enhanced node incorporates various process design improvements, delivering notable power, performance, and area (PPA) benefits."
| Samsung Foundry for Leading-Edge Nodes Announced on June 12, 2024 Compiled by AnandTech |
||||||||
| HVM Start | 2023 | 2024 | 2025 | 2026 | 2027 | 2027 | ||
| Process | SF3E | SF3 | SF2 (aka SF3P) |
SF2P/SF2X | SF2Z | SF1.4 | ||
| FET | GAAFET | |||||||
| Power Delivery | Frontside | Backside (BSPDN) | ? | |||||
| EUV | 0.33 NA EUV | ? | ? | ? | ? | |||
This is another example of a rebranding of leading-edge fabrication nodes in the recent years by a major chipmaker. Samsung Foundry is not disclosing any specific PPA improvements SF3P has over SF2, and for now is only stating in high-level terms that it will be a better-performing node than the planned SF3P.
Meanwhile, this week's announcement also includes new information on Samsung's next batch of process nodes, which are planned for 2026 and 2027. In 2026 Samsung will have SF2P, a further refinement of SF2 which incorporates 'faster' yet less dense transistors. That will be followed up in 2027 with SF2Z, which adds backside power delivery to the mix for better and higher quality power delivery. In particular, Samsung is targetting voltate drop (aka IR drop) here, which is an ongoing concern in chip design.
Finally, SF1.4, a 1.4nm-class node, is on track for 2027 as well. Interestingly, however, it looks like it does not feature a backside power delivery. Which, per current roadmaps, would have Samsung as the only foundry not using BSPDN for their first 1.4nm/14Å-class node.
"We have optimized BSPDN and incorporated it for the first time in the SF2Z node we announced today," the spokesperso... Semiconductors
During Computex 2024, ASRock held an event to unveil some of its upcoming X870E motherboards, designed for AMD's Zen 5-based Ryzen 9000 series processors. ASRock's announcement includes a pair of Taichi-branded boards, the X870E Taichi and the lighter X870E Taichi lite, which uses AMD's X870E (Promontory 21) chipset for AM5.
The current flagship model announced from ASRock's X870E line-up for Ryzen 9000 is the ASRock X870E Taichi. ASRock is advertising a large 27-phase power delivery through 110A SPS, suggesting this board is designed for overclockers and all-around power users. Two PCIe 5.0 x16 slots (operating in either x16/x0 or x8/x8) provide high-speed bandwidth for cutting-edge graphics cards and other devices. Meanwhile, ASRock has gone with 4 DIMM slots on this board, so system builders will be able to max out the board's memory capacity at the cost of bandwidth.
The storage offering is impressive; besides the obligatory PCIe Gen5 x4 M.2 slot (Blazing M.2), ASRock has outfit the board with another three PCIe Gen4 x4 (Hyper) M.2 slots. Also present are two USB4 Type-C ports for high-bandwidth external I/O, while networking support is a solid pairing of a discrete Wi-Fi 7 controller with a Realtek 5Gb Ethernet controller (and the first AM5 board we've come across with something faster than a 2.5GbE controller).
The audio setup includes a Realtek ALC4082 codec and ESS SABRE9218 DAC supporting high-fidelity sound. The BIOS flashback feature is also a nice touch, and we believe this should be a feature on all mid-range to high-end motherboards, which provides an easy way to update the firmware without installing a CPU. And, as no high-end board would be complete without it, ASRock has put RGB lighting on the X870E Taichi as well.
Ultimately, as ASRock's high-end X870E board, the X870E Taichi comes with pretty much every last cutting-edge technology that ASRock can fit on the board.
Comparatively, the ASRock X870E Taichi Lite is a more streamlined and functional version of the X870E Taichi. The Lite retaining all of the latter's key features, including the 27-phase power delivery with 110A smart power stages, dual PCIe 5.0 x16 slots operating at x16 or x8/x8, four DDR5 DIMM slots, and four M.2 slots (1x Gen5 + 3x Gen4). The only significant difference is aesthetics: the Taichi Lite features a simpler silver-themed design without the RGB lighting, while the standard Taichi has a more intricate gold-accented and fanciful aesthetics.
In terms of availability, ASRock is not disclosing a release date for the board at the show. And, checking around with other tech journalists, Andreas Schilling from HawrdwareLUXX has heard that X870E and X870 motherboards aren't expected to be available in time for the Ryzen 9000 series launch. We will investigate this and contact the motherboard vendors to confirm the situation. Though as X870E/X870 boards barely differ from the current crop of X670E/B650E boards to begin with, the Ryzen 9000 series won't be fazed by a lack of slightly newer motherboards.
MotherboardsSK hynix is set to unveil their first Gen5 consumer NVMe SSD lineup shortly, based on the products at display in their GTC 2024 booth. The Platinum P51 M.2 2280 NVMe SSD will take over flagship duties from the Platinum P41 that has been serving the market for more than a year.
Similar to the Gold P31 and the Platinum P41, the Platinum P51 also uses an in-house SSD controller. The key updates are the move to PCIe Gen5 and the use of SK hynix's 238L TLC NAND. Other details are scarce, and we have reached out for additional information.
| SK hynix Platinum P51 Gen5 NVMe SSD Specifications | ||||
| Capacity | 500 GB | 1 TB | 2 TB | |
| Controller | SK hynix In-House (Alistar) | |||
| NAND Flash | SK hynix 238L 3D TLC NAND at ?? MT/s ('4D' with CMOS circuitry under the NAND as per SK hynix marketing) | |||
| Form-Factor, Interface | M.2-2280, PCIe 5.0 x4, NVMe 2.0 | |||
| Sequential Read | 13500 MB/s | |||
| Sequential Write | 11500 MB/s | |||
| Random Read IOPS | TBD | |||
| Random Write IOPS | TBD | |||
| SLC Caching | Yes | |||
| TCG Opal Encryption | TBD | |||
| Warranty | TBD | |||
| Write Endurance | TBD | TBD | TBD | |
Only the peak sequential access numbers were available at the GTC booth, indicating that the drive's firmware is still undergoing tweaks. It is also unclear how these numbers are going to vary based on capacity. Availability and pricing are also not public yet.
This is a significant launch for the Gen5 consumer SSD market, where the number of available options are quite limited. The Phison E26 controller and Micron's B58R NAND combination is already in its second generation (with the NAND operating at 2400 MT/s in the newest avatar), but other vertically integrated vendors such as Samsung, Western Digital / Kioxia, and SK hynix (till now) are focusing more on the Gen4 market which has much higher adoption.
We will update the piece with additional information once the specifications are officially available.
StorageSamsung this week has unveiled its latest process technologies roadmap at the company's Samsung Foundry Forum (SFF) U.S. The new plan covers the evolution of Samsung's 2nm-class production nodes through 2027, including a process technology with a backside power delivery, re-emphasizing plans to bring out a 1.4nm-class node in 2027, and the introduction of a 'high value' 4nm-class manufacturing tech.
Samsung Foundry's key announcements for today are clearly focused on the its 2nm-class process technologies, which are set to enter production in 2025 and will span to 2027, when the company's 1.4-nm class production node is set to enter the scene. Samsung is also adding (or rather, renaming) another 2nm-class node to their roadmap with SF2, which was previously disclosed by Samsung as SF3P and aimed at high-performance devices.
"We have refined and improved the SF3P, resulting in what we now refer to as SF2," a Samsung spokesperson told AnandTech. "This enhanced node incorporates various process design improvements, delivering notable power, performance, and area (PPA) benefits."
| Samsung Foundry for Leading-Edge Nodes Announced on June 12, 2024 Compiled by AnandTech |
||||||||
| HVM Start | 2023 | 2024 | 2025 | 2026 | 2027 | 2027 | ||
| Process | SF3E | SF3 | SF2 (aka SF3P) |
SF2P/SF2X | SF2Z | SF1.4 | ||
| FET | GAAFET | |||||||
| Power Delivery | Frontside | Backside (BSPDN) | ? | |||||
| EUV | 0.33 NA EUV | ? | ? | ? | ? | |||
This is another example of a rebranding of leading-edge fabrication nodes in the recent years by a major chipmaker. Samsung Foundry is not disclosing any specific PPA improvements SF3P has over SF2, and for now is only stating in high-level terms that it will be a better-performing node than the planned SF3P.
Meanwhile, this week's announcement also includes new information on Samsung's next batch of process nodes, which are planned for 2026 and 2027. In 2026 Samsung will have SF2P, a further refinement of SF2 which incorporates 'faster' yet less dense transistors. That will be followed up in 2027 with SF2Z, which adds backside power delivery to the mix for better and higher quality power delivery. In particular, Samsung is targetting voltate drop (aka IR drop) here, which is an ongoing concern in chip design.
Finally, SF1.4, a 1.4nm-class node, is on track for 2027 as well. Interestingly, however, it looks like it does not feature a backside power delivery. Which, per current roadmaps, would have Samsung as the only foundry not using BSPDN for their first 1.4nm/14Å-class node.
"We have optimized BSPDN and incorporated it for the first time in the SF2Z node we announced today," the spokesperso... Semiconductors
During Computex 2024, ASRock held an event to unveil some of its upcoming X870E motherboards, designed for AMD's Zen 5-based Ryzen 9000 series processors. ASRock's announcement includes a pair of Taichi-branded boards, the X870E Taichi and the lighter X870E Taichi lite, which uses AMD's X870E (Promontory 21) chipset for AM5.
The current flagship model announced from ASRock's X870E line-up for Ryzen 9000 is the ASRock X870E Taichi. ASRock is advertising a large 27-phase power delivery through 110A SPS, suggesting this board is designed for overclockers and all-around power users. Two PCIe 5.0 x16 slots (operating in either x16/x0 or x8/x8) provide high-speed bandwidth for cutting-edge graphics cards and other devices. Meanwhile, ASRock has gone with 4 DIMM slots on this board, so system builders will be able to max out the board's memory capacity at the cost of bandwidth.
The storage offering is impressive; besides the obligatory PCIe Gen5 x4 M.2 slot (Blazing M.2), ASRock has outfit the board with another three PCIe Gen4 x4 (Hyper) M.2 slots. Also present are two USB4 Type-C ports for high-bandwidth external I/O, while networking support is a solid pairing of a discrete Wi-Fi 7 controller with a Realtek 5Gb Ethernet controller (and the first AM5 board we've come across with something faster than a 2.5GbE controller).
The audio setup includes a Realtek ALC4082 codec and ESS SABRE9218 DAC supporting high-fidelity sound. The BIOS flashback feature is also a nice touch, and we believe this should be a feature on all mid-range to high-end motherboards, which provides an easy way to update the firmware without installing a CPU. And, as no high-end board would be complete without it, ASRock has put RGB lighting on the X870E Taichi as well.
Ultimately, as ASRock's high-end X870E board, the X870E Taichi comes with pretty much every last cutting-edge technology that ASRock can fit on the board.
Comparatively, the ASRock X870E Taichi Lite is a more streamlined and functional version of the X870E Taichi. The Lite retaining all of the latter's key features, including the 27-phase power delivery with 110A smart power stages, dual PCIe 5.0 x16 slots operating at x16 or x8/x8, four DDR5 DIMM slots, and four M.2 slots (1x Gen5 + 3x Gen4). The only significant difference is aesthetics: the Taichi Lite features a simpler silver-themed design without the RGB lighting, while the standard Taichi has a more intricate gold-accented and fanciful aesthetics.
In terms of availability, ASRock is not disclosing a release date for the board at the show. And, checking around with other tech journalists, Andreas Schilling from HawrdwareLUXX has heard that X870E and X870 motherboards aren't expected to be available in time for the Ryzen 9000 series launch. We will investigate this and contact the motherboard vendors to confirm the situation. Though as X870E/X870 boards barely differ from the current crop of X670E/B650E boards to begin with, the Ryzen 9000 series won't be fazed by a lack of slightly newer motherboards.
MotherboardsSK hynix is set to unveil their first Gen5 consumer NVMe SSD lineup shortly, based on the products at display in their GTC 2024 booth. The Platinum P51 M.2 2280 NVMe SSD will take over flagship duties from the Platinum P41 that has been serving the market for more than a year.
Similar to the Gold P31 and the Platinum P41, the Platinum P51 also uses an in-house SSD controller. The key updates are the move to PCIe Gen5 and the use of SK hynix's 238L TLC NAND. Other details are scarce, and we have reached out for additional information.
| SK hynix Platinum P51 Gen5 NVMe SSD Specifications | ||||
| Capacity | 500 GB | 1 TB | 2 TB | |
| Controller | SK hynix In-House (Alistar) | |||
| NAND Flash | SK hynix 238L 3D TLC NAND at ?? MT/s ('4D' with CMOS circuitry under the NAND as per SK hynix marketing) | |||
| Form-Factor, Interface | M.2-2280, PCIe 5.0 x4, NVMe 2.0 | |||
| Sequential Read | 13500 MB/s | |||
| Sequential Write | 11500 MB/s | |||
| Random Read IOPS | TBD | |||
| Random Write IOPS | TBD | |||
| SLC Caching | Yes | |||
| TCG Opal Encryption | TBD | |||
| Warranty | TBD | |||
| Write Endurance | TBD | TBD | TBD | |
Only the peak sequential access numbers were available at the GTC booth, indicating that the drive's firmware is still undergoing tweaks. It is also unclear how these numbers are going to vary based on capacity. Availability and pricing are also not public yet.
This is a significant launch for the Gen5 consumer SSD market, where the number of available options are quite limited. The Phison E26 controller and Micron's B58R NAND combination is already in its second generation (with the NAND operating at 2400 MT/s in the newest avatar), but other vertically integrated vendors such as Samsung, Western Digital / Kioxia, and SK hynix (till now) are focusing more on the Gen4 market which has much higher adoption.
We will update the piece with additional information once the specifications are officially available.
StorageSamsung this week has unveiled its latest process technologies roadmap at the company's Samsung Foundry Forum (SFF) U.S. The new plan covers the evolution of Samsung's 2nm-class production nodes through 2027, including a process technology with a backside power delivery, re-emphasizing plans to bring out a 1.4nm-class node in 2027, and the introduction of a 'high value' 4nm-class manufacturing tech.
Samsung Foundry's key announcements for today are clearly focused on the its 2nm-class process technologies, which are set to enter production in 2025 and will span to 2027, when the company's 1.4-nm class production node is set to enter the scene. Samsung is also adding (or rather, renaming) another 2nm-class node to their roadmap with SF2, which was previously disclosed by Samsung as SF3P and aimed at high-performance devices.
"We have refined and improved the SF3P, resulting in what we now refer to as SF2," a Samsung spokesperson told AnandTech. "This enhanced node incorporates various process design improvements, delivering notable power, performance, and area (PPA) benefits."
| Samsung Foundry for Leading-Edge Nodes Announced on June 12, 2024 Compiled by AnandTech |
||||||||
| HVM Start | 2023 | 2024 | 2025 | 2026 | 2027 | 2027 | ||
| Process | SF3E | SF3 | SF2 (aka SF3P) |
SF2P/SF2X | SF2Z | SF1.4 | ||
| FET | GAAFET | |||||||
| Power Delivery | Frontside | Backside (BSPDN) | ? | |||||
| EUV | 0.33 NA EUV | ? | ? | ? | ? | |||
This is another example of a rebranding of leading-edge fabrication nodes in the recent years by a major chipmaker. Samsung Foundry is not disclosing any specific PPA improvements SF3P has over SF2, and for now is only stating in high-level terms that it will be a better-performing node than the planned SF3P.
Meanwhile, this week's announcement also includes new information on Samsung's next batch of process nodes, which are planned for 2026 and 2027. In 2026 Samsung will have SF2P, a further refinement of SF2 which incorporates 'faster' yet less dense transistors. That will be followed up in 2027 with SF2Z, which adds backside power delivery to the mix for better and higher quality power delivery. In particular, Samsung is targetting voltate drop (aka IR drop) here, which is an ongoing concern in chip design.
Finally, SF1.4, a 1.4nm-class node, is on track for 2027 as well. Interestingly, however, it looks like it does not feature a backside power delivery. Which, per current roadmaps, would have Samsung as the only foundry not using BSPDN for their first 1.4nm/14Å-class node.
"We have optimized BSPDN and incorporated it for the first time in the SF2Z node we announced today," the spokesperso... Semiconductors
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