Samsung Foundry Update: 2nm Unveil in June, Second-Gen SF3 3nm Hits Production This Year
As part of Samsung's Q1 earnings announcement, the company has outlined some of its foundry unit's key plans for the rest of the year. The company has confirmed that it remains on track to meeting its goal of starting mass production of chips on its SF3 (3 nm-class, 2nd Generation) technology in the second half of the year. Meanwhile in June, Samsung Foundry will formally unveil its SF2 (2 nm-class) process technology, which will offer a mix of performance and efficiency enhancements. Finally, the company the company is preparing a variation of its 4 nm-class technology for integration into stacked 3D designs.
SF2 To Be Unveiled In June
Samsung plans to disclose key details about its SF2 fabrication technology at the VLSI Symposium 2024 on June 19. This will be the company's second major process node based upon gate-all-around (GAA) multi-bridge channel field-effect transistors (MBCFET). Improving over its predecessor, SF2 will feature a 'unique epitaxial and integration process,' which will give the process node higher performance and lower leakage than traditional FinFET-based nodes (though Samsung isn't disclosing the specific node they're comparing it to).
Samsung says that SF2 increases performance of narrow transistors by 29% for N-type and 46% for P-type, and wide transistors by 11% and 23% respectively. Moreover, it reduces transistor global variation by 26% compared to FinFET technology, and cuts product leakage by approximately 50%. This process also sets the stage for future advancements in technology through enhanced design technology co-optimization (DTCO) collaboration with its customers.
One thing that Samsung has not mentioned in context of SF2 is backside power delivery, so at least for the moment, there is no indication that Samsung will be adopting this next-gen power routing feature for SF2.
Samsung says that the design infrastructure for SF2 – the PDK, EDA tools, and licensed IP – will be finalized in the second quarter of 2024. Once this happens, Samsung's chip development partners will be able to begin designing products for this production node. Meanwhile, Samsung is already working with Arm to co-optimize Arm's Cortex cores for the SF2 process.
SF3: On Track for 2H 2024
As the first fab to introduce a GAAFET-based node, Samsung has been on the cutting edge of chip construction. At the same time, however, that has also meant that they're the first fab to encounter and solve the inevitable teething issues that come with such a major transistor design change. Consequently, while Samsung's first-generation SF3E process technology has been in production for a little less than two years now, the only publicly-disclosed chips made on the process so far have been relatively small cryptocurrency mining chips – exactly the kind of pipecleaner parts that do well on a new process node.
But with that experience in hand, Samsung is preparing to move on to making bigger and better chips with GAAFETs. As part of their earnings announcements, the company has confirmed that their updated SF3 node, which was introduced last year, remains on schedule to enter production in the second half of 2024.
A more mature product from the get-go, SF3 is being prepared to be used for building larger processors, including datacenter products. Compared to its direct predecessor, SF4, SF3 promises a 22% performance boost at the same power and transistor count, or a 34% lower power at the same frequency and complexity, as well as a 21% logic area reduction. In general, Samsung pins a lot of hopes on this technology, as it's this generation of their 3nm-class technology that is poised to compete against TSMC's N3B and N3E nodes.
SF4: Ready for 3D Stacking
Finally, Samsung is also preparing a variant of their final FinFET technology node, SF4, for use in 3D chiplet stacking. As transistor density improvements have continued to slow, 3D chip stacking has emerged as a way to keep boosting overall chip performance, especially with modern, multi-tile processor desig... Semiconductors
Posted by The Techinical Support
AMD Quietly Launches Ryzen 7 8700F and Ryzen 5 8400F Processors 
AMD has recently expanded its Ryzen 8000 series by introducing the Ryzen 7 8700F and Ryzen 5 8400F processors. Initially launched in China, these chips were added to AMD's global website, signaling they are available worldwide, apparently from April 1st. Built from the recent Zen 4-based Phoenix APUs using the TSMC 4nm node as their Zen 4 mobile chips, these new CPUs lack integrated graphics. However, the Ryzen 7 8700F does include the integrated Ryzen AI NPU for added capabilities in a world currently dominated by AI and moving it directly into the PC.
The company's decision to announce these chips in China aligns with its strategy to offer Ryzen solutions at every price point in the market. Although AMD didn't initially disclose the full specifications of these F-series models, and we did reach out to the company to ask about them, they refused to discuss them with us. Their listing on the website has now been updated with a complete list of specifications and features, with everything but the price mentioned.
| AMD Ryzen 8000G vs. Ryzen 8000F Series (Desktop) Zen 4 (Phoenix) |
|||||||||
| AnandTech | Cores/Threads | Base Freq |
Turbo Freq |
GPU | GPU Freq |
Ryzen AI (NPU) |
L3 Cache (MB) |
TDP | MSRP |
| Ryzen 7 | |||||||||
| Ryzen 7 8700G | 8/16 | 4200 | 5100 | R780M 12 CUs |
2900 | Y | 16 | 65W | $329 |
| Ryzen 7 8700F | 8/16 | 4100 | 5000 | - | - | Y | 16 | 65W | ? |
| Ryzen 5 | |||||||||
| Ryzen 5 8600G | 6/12 | 4300 | 5000 | R760M 8 CUs |
2800 | Y | 16 | 65W | $229 |
| Ryzen 5 8400F | 6/12 | 4200 | 4700 | - | - | N | 16 | 65W | ? |
The Ryzen 7 8700F features an 8C/16T design, with 16MB of L3 cache and the same 65W TDP as the Ryzen 7 8700G. Although the base clock speed is 4.1 GHz, it boosts to 5.0 GHz; this is 100 MHz less on both base/boost clocks than the 8700G. Meanwhile, the Ryzen 5 8400F is a slightly scaled-down version of the Ryzen 8600G APU, with 6C/12, 16MB of L3 cache, and again has a 100 MHz reduction to base clocks compared to the 8600G. Unlike the Ryzen 5 8400F, the Ryzen 7 8700F keeps AMD's Ryzen AI NPU, adding additional capability for generative AI.
The Ryzen 5 8400F can boost up to 4.7 GHz, 300 MHz slower than the Ryzen 5 8600G. AMD also allows overclocking for these new F-series chips, which means users could potentially boost the performance of these processors to match their G-series equivalents.
Pricing details are still pending, but to remain competitive, AMD will likely need to price these CPUs below the 8700G and 8600G, as well as the Ryzen 7 7700 and Ryzen 5 7600. These CPUs offer, albeit very limited, integrated graphics and have double the L3 cache capacity, along with higher boost clocks than the 8000F series chips, so pricing is something to consider whenever pricing becomes available.
CPUs
AMD Quietly Launches Ryzen 7 8700F and Ryzen 5 8400F Processors
AMD has recently expanded its Ryzen 8000 series by introducing the Ryzen 7 8700F and Ryzen 5 8400F processors. Initially launched in China, these chips were added to AMD's global website, signaling they are available worldwide, apparently from April 1st. Built from the recent Zen 4-based Phoenix APUs using the TSMC 4nm node as their Zen 4 mobile chips, these new CPUs lack integrated graphics. However, the Ryzen 7 8700F does include the integrated Ryzen AI NPU for added capabilities in a world currently dominated by AI and moving it directly into the PC.
The company's decision to announce these chips in China aligns with its strategy to offer Ryzen solutions at every price point in the market. Although AMD didn't initially disclose the full specifications of these F-series models, and we did reach out to the company to ask about them, they refused to discuss them with us. Their listing on the website has now been updated with a complete list of specifications and features, with everything but the price mentioned.
| AMD Ryzen 8000G vs. Ryzen 8000F Series (Desktop) Zen 4 (Phoenix) |
|||||||||
| AnandTech | Cores/Threads | Base Freq |
Turbo Freq |
GPU | GPU Freq |
Ryzen AI (NPU) |
L3 Cache (MB) |
TDP | MSRP |
| Ryzen 7 | |||||||||
| Ryzen 7 8700G | 8/16 | 4200 | 5100 | R780M 12 CUs |
2900 | Y | 16 | 65W | $329 |
| Ryzen 7 8700F | 8/16 | 4100 | 5000 | - | - | Y | 16 | 65W | ? |
| Ryzen 5 | |||||||||
| Ryzen 5 8600G | 6/12 | 4300 | 5000 | R760M 8 CUs |
2800 | Y | 16 | 65W | $229 |
| Ryzen 5 8400F | 6/12 | 4200 | 4700 | - | - | N | 16 | 65W | ? |
The Ryzen 7 8700F features an 8C/16T design, with 16MB of L3 cache and the same 65W TDP as the Ryzen 7 8700G. Although the base clock speed is 4.1 GHz, it boosts to 5.0 GHz; this is 100 MHz less on both base/boost clocks than the 8700G. Meanwhile, the Ryzen 5 8400F is a slightly scaled-down version of the Ryzen 8600G APU, with 6C/12, 16MB of L3 cache, and again has a 100 MHz reduction to base clocks compared to the 8600G. Unlike the Ryzen 5 8400F, the Ryzen 7 8700F keeps AMD's Ryzen AI NPU, adding additional capability for generative AI.
The Ryzen 5 8400F can boost up to 4.7 GHz, 300 MHz slower than the Ryzen 5 8600G. AMD also allows overclocking for these new F-series chips, which means users could potentially boost the performance of these processors to match their G-series equivalents.
Pricing details are still pending, but to remain competitive, AMD will likely need to price these CPUs below the 8700G and 8600G, as well as the Ryzen 7 7700 and Ryzen 5 7600. These CPUs offer, albeit very limited, integrated graphics and have double the L3 cache capacity, along with higher boost clocks than the 8000F series chips, so pricing is something to consider whenever pricing becomes available.
CPUs
![](https://twitter.com/share?url=https://compbuddey.blogspot.com/2024/05/samsung-foundry-update-2nm-unveil-in_36.html&text=Samsung Foundry Update: 2nm Unveil in June, Second-Gen SF3 3nm Hits Production This Year <p align="center"><a href="https://www.anandtech.com/show/21377/samsung-foundry-update-2nm-unveil-in-june-2nd-gen-3nm-hits-production-this-year"><img src="https://images.anandtech.com/doci/21377/samsung-foundry-wafer-semiconductor-678-1_575px.jpg" alt="" /></a></p><p><p>As part of Samsung's Q1 earnings announcement, the company has outlined some of its foundry unit's key plans for the rest of the year. The company has confirmed that it remains on track to meeting its goal of starting mass production of chips on its SF3 (3 nm-class, 2nd Generation) technology in the second half of the year. Meanwhile in June, Samsung Foundry will formally unveil its SF2 (2 nm-class) process technology, which will offer a mix of performance and efficiency enhancements. Finally, the company the company is preparing a variation of its 4 nm-class technology for integration into stacked 3D designs.</p>
<h3>SF2 To Be Unveiled In June</h3>
<p>Samsung plans to disclose key details about its SF2 fabrication technology at the VLSI Symposium 2024 on June 19. This will be the company's second major process node based upon gate-all-around (GAA) multi-bridge channel field-effect transistors (MBCFET). Improving over its predecessor, SF2 will feature a 'unique epitaxial and integration process,' which will give the process node higher performance and lower leakage than traditional FinFET-based nodes (though Samsung isn't disclosing the specific node they're comparing it to).</p>
<p style="text-align: center;"><a href="https://www.anandtech.com/show/21377/samsung-foundry-update-2nm-unveil-in-june-2nd-gen-3nm-hits-production-this-year"><img alt="" src="https://images.anandtech.com/doci/21377/samsung-foundry-roadmap.png" style="width: 100%;" /></a></p>
<p>Samsung says that SF2 increases performance of narrow transistors by 29% for N-type and 46% for P-type, and wide transistors by 11% and 23% respectively. Moreover, it reduces transistor global variation by 26% compared to FinFET technology, and cuts product leakage by approximately 50%. This process also sets the stage for future advancements in technology through enhanced design technology co-optimization (DTCO) collaboration with its customers.</p>
<p>One thing that Samsung has not mentioned in context of SF2 is backside power delivery, so at least for the moment, there is no indication that Samsung will be adopting this next-gen power routing feature for SF2.</p>
<p>Samsung says that the design infrastructure for SF2 – the PDK, EDA tools, and licensed IP – will be finalized in the second quarter of 2024. Once this happens, Samsung's chip development partners will be able to begin designing products for this production node. Meanwhile, Samsung is already working with Arm to co-optimize Arm's Cortex cores for the SF2 process.</p>
<h3>SF3: On Track for 2H 2024</h3>
<p>As the first fab to introduce a GAAFET-based node, Samsung has been on the cutting edge of chip construction. At the same time, however, that has also meant that they're the first fab to encounter and solve the inevitable teething issues that come with such a major transistor design change. Consequently, while Samsung's first-generation SF3E process technology has been in production for a little less than two years now, the only publicly-disclosed chips made on the process so far have been relatively small cryptocurrency mining chips – exactly the kind of pipecleaner parts that do well on a new process node.</p>
<p>But with that experience in hand, Samsung is preparing to move on to making bigger and better chips with GAAFETs. As part of their earnings announcements, the company has confirmed that their updated SF3 node, which was introduced last year, remains on schedule to enter production in the second half of 2024.</p>
<p align="center"><a href="https://www.anandtech.com/show/21377/samsung-foundry-update-2nm-unveil-in-june-2nd-gen-3nm-hits-production-this-year"><img alt="" src="https://images.anandtech.com/doci/21377/Samsung_Q1_Foundry.png" style="width: 100%;" /></a></p>
<p>A more mature product from the get-go, SF3 is being prepared to be used for building larger processors, including datacenter products. Compared to its direct predecessor, SF4, SF3 promises a 22% performance boost at the same power and transistor count, or a 34% lower power at the same frequency and complexity, as well as a 21% logic area reduction. In general, Samsung pins a lot of hopes on this technology, as it's this generation of their 3nm-class technology that is poised to compete against TSMC's N3B and N3E nodes.</p>
<h3>SF4: Ready for 3D Stacking</h3>
<p>Finally, Samsung is also preparing a variant of their final FinFET technology node, SF4, for use in 3D chiplet stacking. As transistor density improvements have continued to slow, 3D chip stacking has emerged as a way to keep boosting overall chip performance, especially with modern, multi-tile processor desig... Semiconductors){kind=link}
![](https://www.pinterest.com/pin/create/button/?url=https://compbuddey.blogspot.com/2024/05/samsung-foundry-update-2nm-unveil-in_36.html&media=https://lh3.googleusercontent.com/blogger_img_proxy/AEn0k_sOmZg9z7n76CqJuFrHp_knwSQJVSlKYK5iR5vt_n39sQ-VZL7I1QZcktxnMaGYPR7NsZvvtQt-0Byvxe8ngsh0NTlHroQmodGNz1uKUQb4IxuhN-ELjA3h25JWxSCH-OFw_bWvzEJt9T1Q77NDjeL-CNmKO5g5_45CH0nt6SE&description=Samsung Foundry Update: 2nm Unveil in June, Second-Gen SF3 3nm Hits Production This Year <p align="center"><a href="https://www.anandtech.com/show/21377/samsung-foundry-update-2nm-unveil-in-june-2nd-gen-3nm-hits-production-this-year"><img src="https://images.anandtech.com/doci/21377/samsung-foundry-wafer-semiconductor-678-1_575px.jpg" alt="" /></a></p><p><p>As part of Samsung's Q1 earnings announcement, the company has outlined some of its foundry unit's key plans for the rest of the year. The company has confirmed that it remains on track to meeting its goal of starting mass production of chips on its SF3 (3 nm-class, 2nd Generation) technology in the second half of the year. Meanwhile in June, Samsung Foundry will formally unveil its SF2 (2 nm-class) process technology, which will offer a mix of performance and efficiency enhancements. Finally, the company the company is preparing a variation of its 4 nm-class technology for integration into stacked 3D designs.</p>
<h3>SF2 To Be Unveiled In June</h3>
<p>Samsung plans to disclose key details about its SF2 fabrication technology at the VLSI Symposium 2024 on June 19. This will be the company's second major process node based upon gate-all-around (GAA) multi-bridge channel field-effect transistors (MBCFET). Improving over its predecessor, SF2 will feature a 'unique epitaxial and integration process,' which will give the process node higher performance and lower leakage than traditional FinFET-based nodes (though Samsung isn't disclosing the specific node they're comparing it to).</p>
<p style="text-align: center;"><a href="https://www.anandtech.com/show/21377/samsung-foundry-update-2nm-unveil-in-june-2nd-gen-3nm-hits-production-this-year"><img alt="" src="https://images.anandtech.com/doci/21377/samsung-foundry-roadmap.png" style="width: 100%;" /></a></p>
<p>Samsung says that SF2 increases performance of narrow transistors by 29% for N-type and 46% for P-type, and wide transistors by 11% and 23% respectively. Moreover, it reduces transistor global variation by 26% compared to FinFET technology, and cuts product leakage by approximately 50%. This process also sets the stage for future advancements in technology through enhanced design technology co-optimization (DTCO) collaboration with its customers.</p>
<p>One thing that Samsung has not mentioned in context of SF2 is backside power delivery, so at least for the moment, there is no indication that Samsung will be adopting this next-gen power routing feature for SF2.</p>
<p>Samsung says that the design infrastructure for SF2 – the PDK, EDA tools, and licensed IP – will be finalized in the second quarter of 2024. Once this happens, Samsung's chip development partners will be able to begin designing products for this production node. Meanwhile, Samsung is already working with Arm to co-optimize Arm's Cortex cores for the SF2 process.</p>
<h3>SF3: On Track for 2H 2024</h3>
<p>As the first fab to introduce a GAAFET-based node, Samsung has been on the cutting edge of chip construction. At the same time, however, that has also meant that they're the first fab to encounter and solve the inevitable teething issues that come with such a major transistor design change. Consequently, while Samsung's first-generation SF3E process technology has been in production for a little less than two years now, the only publicly-disclosed chips made on the process so far have been relatively small cryptocurrency mining chips – exactly the kind of pipecleaner parts that do well on a new process node.</p>
<p>But with that experience in hand, Samsung is preparing to move on to making bigger and better chips with GAAFETs. As part of their earnings announcements, the company has confirmed that their updated SF3 node, which was introduced last year, remains on schedule to enter production in the second half of 2024.</p>
<p align="center"><a href="https://www.anandtech.com/show/21377/samsung-foundry-update-2nm-unveil-in-june-2nd-gen-3nm-hits-production-this-year"><img alt="" src="https://images.anandtech.com/doci/21377/Samsung_Q1_Foundry.png" style="width: 100%;" /></a></p>
<p>A more mature product from the get-go, SF3 is being prepared to be used for building larger processors, including datacenter products. Compared to its direct predecessor, SF4, SF3 promises a 22% performance boost at the same power and transistor count, or a 34% lower power at the same frequency and complexity, as well as a 21% logic area reduction. In general, Samsung pins a lot of hopes on this technology, as it's this generation of their 3nm-class technology that is poised to compete against TSMC's N3B and N3E nodes.</p>
<h3>SF4: Ready for 3D Stacking</h3>
<p>Finally, Samsung is also preparing a variant of their final FinFET technology node, SF4, for use in 3D chiplet stacking. As transistor density improvements have continued to slow, 3D chip stacking has emerged as a way to keep boosting overall chip performance, especially with modern, multi-tile processor desig... Semiconductors){kind=link}
![](https://web.whatsapp.com/send?text=Samsung Foundry Update: 2nm Unveil in June, Second-Gen SF3 3nm Hits Production This Year <p align="center"><a href="https://www.anandtech.com/show/21377/samsung-foundry-update-2nm-unveil-in-june-2nd-gen-3nm-hits-production-this-year"><img src="https://images.anandtech.com/doci/21377/samsung-foundry-wafer-semiconductor-678-1_575px.jpg" alt="" /></a></p><p><p>As part of Samsung's Q1 earnings announcement, the company has outlined some of its foundry unit's key plans for the rest of the year. The company has confirmed that it remains on track to meeting its goal of starting mass production of chips on its SF3 (3 nm-class, 2nd Generation) technology in the second half of the year. Meanwhile in June, Samsung Foundry will formally unveil its SF2 (2 nm-class) process technology, which will offer a mix of performance and efficiency enhancements. Finally, the company the company is preparing a variation of its 4 nm-class technology for integration into stacked 3D designs.</p>
<h3>SF2 To Be Unveiled In June</h3>
<p>Samsung plans to disclose key details about its SF2 fabrication technology at the VLSI Symposium 2024 on June 19. This will be the company's second major process node based upon gate-all-around (GAA) multi-bridge channel field-effect transistors (MBCFET). Improving over its predecessor, SF2 will feature a 'unique epitaxial and integration process,' which will give the process node higher performance and lower leakage than traditional FinFET-based nodes (though Samsung isn't disclosing the specific node they're comparing it to).</p>
<p style="text-align: center;"><a href="https://www.anandtech.com/show/21377/samsung-foundry-update-2nm-unveil-in-june-2nd-gen-3nm-hits-production-this-year"><img alt="" src="https://images.anandtech.com/doci/21377/samsung-foundry-roadmap.png" style="width: 100%;" /></a></p>
<p>Samsung says that SF2 increases performance of narrow transistors by 29% for N-type and 46% for P-type, and wide transistors by 11% and 23% respectively. Moreover, it reduces transistor global variation by 26% compared to FinFET technology, and cuts product leakage by approximately 50%. This process also sets the stage for future advancements in technology through enhanced design technology co-optimization (DTCO) collaboration with its customers.</p>
<p>One thing that Samsung has not mentioned in context of SF2 is backside power delivery, so at least for the moment, there is no indication that Samsung will be adopting this next-gen power routing feature for SF2.</p>
<p>Samsung says that the design infrastructure for SF2 – the PDK, EDA tools, and licensed IP – will be finalized in the second quarter of 2024. Once this happens, Samsung's chip development partners will be able to begin designing products for this production node. Meanwhile, Samsung is already working with Arm to co-optimize Arm's Cortex cores for the SF2 process.</p>
<h3>SF3: On Track for 2H 2024</h3>
<p>As the first fab to introduce a GAAFET-based node, Samsung has been on the cutting edge of chip construction. At the same time, however, that has also meant that they're the first fab to encounter and solve the inevitable teething issues that come with such a major transistor design change. Consequently, while Samsung's first-generation SF3E process technology has been in production for a little less than two years now, the only publicly-disclosed chips made on the process so far have been relatively small cryptocurrency mining chips – exactly the kind of pipecleaner parts that do well on a new process node.</p>
<p>But with that experience in hand, Samsung is preparing to move on to making bigger and better chips with GAAFETs. As part of their earnings announcements, the company has confirmed that their updated SF3 node, which was introduced last year, remains on schedule to enter production in the second half of 2024.</p>
<p align="center"><a href="https://www.anandtech.com/show/21377/samsung-foundry-update-2nm-unveil-in-june-2nd-gen-3nm-hits-production-this-year"><img alt="" src="https://images.anandtech.com/doci/21377/Samsung_Q1_Foundry.png" style="width: 100%;" /></a></p>
<p>A more mature product from the get-go, SF3 is being prepared to be used for building larger processors, including datacenter products. Compared to its direct predecessor, SF4, SF3 promises a 22% performance boost at the same power and transistor count, or a 34% lower power at the same frequency and complexity, as well as a 21% logic area reduction. In general, Samsung pins a lot of hopes on this technology, as it's this generation of their 3nm-class technology that is poised to compete against TSMC's N3B and N3E nodes.</p>
<h3>SF4: Ready for 3D Stacking</h3>
<p>Finally, Samsung is also preparing a variant of their final FinFET technology node, SF4, for use in 3D chiplet stacking. As transistor density improvements have continued to slow, 3D chip stacking has emerged as a way to keep boosting overall chip performance, especially with modern, multi-tile processor desig... Semiconductors | https://compbuddey.blogspot.com/2024/05/samsung-foundry-update-2nm-unveil-in_36.html){kind=link}
![](mailto:?subject=Samsung Foundry Update: 2nm Unveil in June, Second-Gen SF3 3nm Hits Production This Year <p align="center"><a href="https://www.anandtech.com/show/21377/samsung-foundry-update-2nm-unveil-in-june-2nd-gen-3nm-hits-production-this-year"><img src="https://images.anandtech.com/doci/21377/samsung-foundry-wafer-semiconductor-678-1_575px.jpg" alt="" /></a></p><p><p>As part of Samsung's Q1 earnings announcement, the company has outlined some of its foundry unit's key plans for the rest of the year. The company has confirmed that it remains on track to meeting its goal of starting mass production of chips on its SF3 (3 nm-class, 2nd Generation) technology in the second half of the year. Meanwhile in June, Samsung Foundry will formally unveil its SF2 (2 nm-class) process technology, which will offer a mix of performance and efficiency enhancements. Finally, the company the company is preparing a variation of its 4 nm-class technology for integration into stacked 3D designs.</p>
<h3>SF2 To Be Unveiled In June</h3>
<p>Samsung plans to disclose key details about its SF2 fabrication technology at the VLSI Symposium 2024 on June 19. This will be the company's second major process node based upon gate-all-around (GAA) multi-bridge channel field-effect transistors (MBCFET). Improving over its predecessor, SF2 will feature a 'unique epitaxial and integration process,' which will give the process node higher performance and lower leakage than traditional FinFET-based nodes (though Samsung isn't disclosing the specific node they're comparing it to).</p>
<p style="text-align: center;"><a href="https://www.anandtech.com/show/21377/samsung-foundry-update-2nm-unveil-in-june-2nd-gen-3nm-hits-production-this-year"><img alt="" src="https://images.anandtech.com/doci/21377/samsung-foundry-roadmap.png" style="width: 100%;" /></a></p>
<p>Samsung says that SF2 increases performance of narrow transistors by 29% for N-type and 46% for P-type, and wide transistors by 11% and 23% respectively. Moreover, it reduces transistor global variation by 26% compared to FinFET technology, and cuts product leakage by approximately 50%. This process also sets the stage for future advancements in technology through enhanced design technology co-optimization (DTCO) collaboration with its customers.</p>
<p>One thing that Samsung has not mentioned in context of SF2 is backside power delivery, so at least for the moment, there is no indication that Samsung will be adopting this next-gen power routing feature for SF2.</p>
<p>Samsung says that the design infrastructure for SF2 – the PDK, EDA tools, and licensed IP – will be finalized in the second quarter of 2024. Once this happens, Samsung's chip development partners will be able to begin designing products for this production node. Meanwhile, Samsung is already working with Arm to co-optimize Arm's Cortex cores for the SF2 process.</p>
<h3>SF3: On Track for 2H 2024</h3>
<p>As the first fab to introduce a GAAFET-based node, Samsung has been on the cutting edge of chip construction. At the same time, however, that has also meant that they're the first fab to encounter and solve the inevitable teething issues that come with such a major transistor design change. Consequently, while Samsung's first-generation SF3E process technology has been in production for a little less than two years now, the only publicly-disclosed chips made on the process so far have been relatively small cryptocurrency mining chips – exactly the kind of pipecleaner parts that do well on a new process node.</p>
<p>But with that experience in hand, Samsung is preparing to move on to making bigger and better chips with GAAFETs. As part of their earnings announcements, the company has confirmed that their updated SF3 node, which was introduced last year, remains on schedule to enter production in the second half of 2024.</p>
<p align="center"><a href="https://www.anandtech.com/show/21377/samsung-foundry-update-2nm-unveil-in-june-2nd-gen-3nm-hits-production-this-year"><img alt="" src="https://images.anandtech.com/doci/21377/Samsung_Q1_Foundry.png" style="width: 100%;" /></a></p>
<p>A more mature product from the get-go, SF3 is being prepared to be used for building larger processors, including datacenter products. Compared to its direct predecessor, SF4, SF3 promises a 22% performance boost at the same power and transistor count, or a 34% lower power at the same frequency and complexity, as well as a 21% logic area reduction. In general, Samsung pins a lot of hopes on this technology, as it's this generation of their 3nm-class technology that is poised to compete against TSMC's N3B and N3E nodes.</p>
<h3>SF4: Ready for 3D Stacking</h3>
<p>Finally, Samsung is also preparing a variant of their final FinFET technology node, SF4, for use in 3D chiplet stacking. As transistor density improvements have continued to slow, 3D chip stacking has emerged as a way to keep boosting overall chip performance, especially with modern, multi-tile processor desig... Semiconductors&body=https://compbuddey.blogspot.com/2024/05/samsung-foundry-update-2nm-unveil-in_36.html){kind=link}
Solidigm 122 TB Enterprise QLC SSD Announced for Early 2025 Release 
Solidigm's D5-P5336 61.44 TB enterprise QLC SSD released in mid-2023 has seen unprecedented demand over the last few quarters, driven by the insatiable demand for high-capacity storage in AI datacenters. Multiple vendors have recognized and started preparing products to service this demand, but Solidigm appears to have taken the lead in actual market availability.
At FMS 2024, Solidigm previewed a U.2 version of their upcoming 122 TB enterprise QLC SSD. The proof-of-concept Gen 4 drives were running live in a 2U server, and Solidigm is preparing them for an early 2025 release.
Given the capacity play, Solidigm will be relying on QLC technology. However, the company was coy about confirming the NAND generation used in the product.
Source: The Advantages of Floating Gate Technology (YouTube)
The 61.44 TB D5-P5336 currently utilizes Solidigm's 192L 3D QLC based on the floating gate architecture. This has a distinct advantage for QLC endurance compared to the charge trap architecture also available to Solidigm from SK hynix. That said, SK hynix's 238L NAND also has a QLC avatar, which gives Solidigm the flexibility to use either NAND for the production version of the 122 TB drive. Solidigm expects to confirm this by the end of year in preparation for volume shipment in the first half of 2025.
Storage
Source: The Advantages of Floating Gate Technology (YouTube)
Western Digital Previews M.2 2280 PCIe 5.0 x4 NVMe Client SSDs: 15GBps at Under 7 Watts 
Western Digital's FMS 2024 demonstrations included a preview of their upcoming PCIe 5.0 x4 M.2 2280 NVMe SSDs for mobile workstations and consumer desktops. The Gen 5 client SSD market has been dominated by solutions based on Phison's E26 controller. The first generation products launched with slower NAND flash, while the more recent ones have exceeded the 14 GBps barrier by utilizing Micron's 2400 MT/s 232L 3D TLC. Western Digital has been conservative over the last year or so by focusing more on the mainstream / mid-range market in terms of new product introductions (such as the WD Blue SN5000, WD_BLACK SN770M, and the WD Blue SN580). Their SSD lineup is due for an update with Gen 5 drives being sorely missed. The SSDs being demonstrated at FMS 2024 will end up doing just that.
Western Digital's technology demonstrations in this segment involved two different M.2 2280 SSDs - one for the performance segment, and another for the mainstream market. They both utilize in-house controllers - while the performance segment drive uses a 8-channel controller with DRAM for the flash translation layer, the mainstream one utilizes a 4-channel DRAM-less controller. Both drives being benchmarked live were equipped with BiCS8 218-layer 3D TLC.
Western Digital is touting the power efficiency of their platform as a key differentiator, promising south of 7W (performance drive) and 5W (mainstream DRAM-less drive) for the complete SSD under stressful traffic. This makes it suitable for use in mobile workstations, but a good fit for desktops as well.
Demonstrated performance numbers indicate almost 15 GBps sequential reads and 2M+ random read IOPS for the performance drive, and 10.7 GBps sequential reads for the mainstream version. Western Digital might have missed the Gen 5 bus as it started out slowly. However, the technology demonstrations with the in-house controller and NAND indicate that WD has caught up just as the Gen 5 market is about to take off.|
Storage
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AMD Quietly Launches Ryzen 7 8700F and Ryzen 5 8400F Processors
AMD has recently expanded its Ryzen 8000 series by introducing the Ryzen 7 8700F and Ryzen 5 8400F processors. Initially launched in China, these chips were added to AMD's global website, signaling they are available worldwide, apparently from April 1st. Built from the recent Zen 4-based Phoenix APUs using the TSMC 4nm node as their Zen 4 mobile chips, these new CPUs lack integrated graphics. However, the Ryzen 7 8700F does include the integrated Ryzen AI NPU for added capabilities in a world currently dominated by AI and moving it directly into the PC.
The company's decision to announce these chips in China aligns with its strategy to offer Ryzen solutions at every price point in the market. Although AMD didn't initially disclose the full specifications of these F-series models, and we did reach out to the company to ask about them, they refused to discuss them with us. Their listing on the website has now been updated with a complete list of specifications and features, with everything but the price mentioned.
| AMD Ryzen 8000G vs. Ryzen 8000F Series (Desktop) Zen 4 (Phoenix) |
|||||||||
| AnandTech | Cores/Threads | Base Freq |
Turbo Freq |
GPU | GPU Freq |
Ryzen AI (NPU) |
L3 Cache (MB) |
TDP | MSRP |
| Ryzen 7 | |||||||||
| Ryzen 7 8700G | 8/16 | 4200 | 5100 | R780M 12 CUs |
2900 | Y | 16 | 65W | $329 |
| Ryzen 7 8700F | 8/16 | 4100 | 5000 | - | - | Y | 16 | 65W | ? |
| Ryzen 5 | |||||||||
| Ryzen 5 8600G | 6/12 | 4300 | 5000 | R760M 8 CUs |
2800 | Y | 16 | 65W | $229 |
| Ryzen 5 8400F | 6/12 | 4200 | 4700 | - | - | N | 16 | 65W | ? |
The Ryzen 7 8700F features an 8C/16T design, with 16MB of L3 cache and the same 65W TDP as the Ryzen 7 8700G. Although the base clock speed is 4.1 GHz, it boosts to 5.0 GHz; this is 100 MHz less on both base/boost clocks than the 8700G. Meanwhile, the Ryzen 5 8400F is a slightly scaled-down version of the Ryzen 8600G APU, with 6C/12, 16MB of L3 cache, and again has a 100 MHz reduction to base clocks compared to the 8600G. Unlike the Ryzen 5 8400F, the Ryzen 7 8700F keeps AMD's Ryzen AI NPU, adding additional capability for generative AI.
The Ryzen 5 8400F can boost up to 4.7 GHz, 300 MHz slower than the Ryzen 5 8600G. AMD also allows overclocking for these new F-series chips, which means users could potentially boost the performance of these processors to match their G-series equivalents.
Pricing details are still pending, but to remain competitive, AMD will likely need to price these CPUs below the 8700G and 8600G, as well as the Ryzen 7 7700 and Ryzen 5 7600. These CPUs offer, albeit very limited, integrated graphics and have double the L3 cache capacity, along with higher boost clocks than the 8000F series chips, so pricing is something to consider whenever pricing becomes available.
CPUs
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