To say that the global foundry market is booming right now would be an understatement. Demand for leading-edge process technologies driven by AI and HPC applications is unprecedented, and with Intel joining the contract chipmaking game, this market segment is once again becoming rather competitive as well. Yet, this is exactly the market segment that Rapidus, a foundry startup backed by the Japanese government and several major Japanese companies, is going to enter in 2027, when its first fab comes online, just a few years from now.
In a fresh update on the status of bringing up the company's first leading-edge fab, Rapidus has revealed that they are intending to get in to the chip packaging game as well. Once complete, the ¥5 trillion ($32 billion) fab will be offering both chip lithography on a 2nm node, as well as packaging services for chips produced within the facility – a notable distinction in an industry where, even if packaging isn't outsourced entirely (OSAT), it's still normally handled at dedicated facilities.
Ultimately, while the company wants to serve the same clients as TSMC, Samsung, and Intel Foundry, the firm plans to do things almost completely differently than its competitors in a bid to speed up chipmaking from finishing design to getting a working chip out of the fab.
"We are very proud of being Japanese," said Henri Richard, general manager and president of Rapidus's subsidiary in the U.S. "[…] I know that some people may be looking at this thinking [that] Japan is known for quality, attention to detail, but not necessarily for speed, or flexibility. But I will tell you that Atsuyoshi Koike (the head of Rapidus) is a very special executive. That is, he has all the quality of Japan, with a lot of American thinking. So he is quite a unique guy, and certainly extraordinarily focused on creating a company that will be extremely flexible and extremely quick on its feet."
Perhaps the most significant difference between Rapidus and traditional foundries is that the company will offer only leading-edge manufacturing technologies to its clients: 2 nm in 2027 (phase 1) and then 1.4 nm in the future (phase 2). This is a stark contrast with other contract fabs, including Intel, which tend to offer their customers a full range of fabrication processes to land more clients and produce more chips. Apparently, Rapidus hopes that that there will be enough Japanese and American chip developers that are inclined to use its 2 nm fabrication process to produce their designs. With that said, the number of chip designers that are using the most advanced production node at any given time is relatively small – limited to large firms who need first-mover advantage and have the margins to justify taking the risk – so it remains to be seen whether Rapidus's business model becomes successful. The company believes it will, since the market of chips made on advanced nodes is growing rapidly.
"Until recently IDC was giving a an estimation of the 2nm and below market as about $80 billion and I think we are going to see soon a revision of the potential to $150 billion," said Richard. "[…] TSMC is the 800 pound gorilla in the space. Samsung is there and Intel is going to enter that space. But the market growth is so significant and the demand is so high, that it does not take a lot of market share for Rapidus to be successful. One of the things that gives me great comfort is that when I talk to our EDA partners, when I talk to our potential clients, it is obvious that the entire industry is looking for alternative supply from a fully independent foundry. There is a place for Samsung in this industry, there is a place for Intel in this industry, the industry is currently owned by TSMC. But another totally independent foundry is more than welcome by all of the ecosystem partners and by the customers. So, I feel really, really good about Rapidus's positioning."
Speaking of advanced process technologies, it is notable that Rapidus does not plan to use ASML's High-NA Twinscan EXE lithography scanners for 2 nm production. Instead, Rapidus is sticking to ASML's proven Low-NA scanners, which will reduce costs of Rapidus's fab, though it will entail usage of EUV double patterning, which brings up costs and lengthens the production cycle in other ways. Even with those trade-offs, SemiAnalysis analysts believe that given the cost of High-NA EUV litho tools and halved imaging field, ... Semiconductors
Western Digital's BiCS8 218-layer 3D NAND is being put to good use in a wide range of client and enterprise platforms, including WD's upcoming Gen 5 client SSDs and 128 TB-class datacenter SSD. On the external storage front, the company demonstrated four different products: for card-based media, 4 TB microSDUC and 8 TB SDUC cards with UHS-I speeds, and on the portable SSD front we had two 16 TB drives. One will be a SanDisk Desk Drive with external power, and the other in the SanDisk Extreme Pro housing with a lanyard opening in the case.
All of these are using BiCS8 QLC NAND, though I did hear booth talk (as I was taking leave) that they were not supposed to divulge the use of QLC in these products. The 4 TB microSDUC and 8 TB SDUC cards are rated for UHS-I speeds. They are being marketed under the SanDisk Ultra branding.
The SanDisk Desk Drive is an external SSD with a 18W power adapter, and it has been in the market for a few months now. Initially launched in capacities up to 8 TB, Western Digital had promised a 16 TB version before the end of the year. It appears that the product is coming to retail quite soon. One aspect to note is that this drive has been using TLC for the SKUs that are currently in the market, so it appears unlikely that the 16 TB version would be QLC. The units (at least up to the 8 TB capacity point) come with two SN850XE drives. Given the recent introduction of the 8 TB SN850X, an 'E' version with tweaked firmware is likely to be present in the 16 TB Desk Drive.
The 16 TB portable SSD in the SanDisk Extreme housing was a technology demonstration. It is definitely the highest capacity bus-powered portable SSD demonstrated by any vendor at any trade show thus far. Given the 16 TB Desk Drive's imminent market introduction, it is just a matter of time before the technology demonstration of the bus-powered version becomes a retail reality.
StorageWestern Digital's BiCS8 218-layer 3D NAND is being put to good use in a wide range of client and enterprise platforms, including WD's upcoming Gen 5 client SSDs and 128 TB-class datacenter SSD. On the external storage front, the company demonstrated four different products: for card-based media, 4 TB microSDUC and 8 TB SDUC cards with UHS-I speeds, and on the portable SSD front we had two 16 TB drives. One will be a SanDisk Desk Drive with external power, and the other in the SanDisk Extreme Pro housing with a lanyard opening in the case.
All of these are using BiCS8 QLC NAND, though I did hear booth talk (as I was taking leave) that they were not supposed to divulge the use of QLC in these products. The 4 TB microSDUC and 8 TB SDUC cards are rated for UHS-I speeds. They are being marketed under the SanDisk Ultra branding.
The SanDisk Desk Drive is an external SSD with a 18W power adapter, and it has been in the market for a few months now. Initially launched in capacities up to 8 TB, Western Digital had promised a 16 TB version before the end of the year. It appears that the product is coming to retail quite soon. One aspect to note is that this drive has been using TLC for the SKUs that are currently in the market, so it appears unlikely that the 16 TB version would be QLC. The units (at least up to the 8 TB capacity point) come with two SN850XE drives. Given the recent introduction of the 8 TB SN850X, an 'E' version with tweaked firmware is likely to be present in the 16 TB Desk Drive.
The 16 TB portable SSD in the SanDisk Extreme housing was a technology demonstration. It is definitely the highest capacity bus-powered portable SSD demonstrated by any vendor at any trade show thus far. Given the 16 TB Desk Drive's imminent market introduction, it is just a matter of time before the technology demonstration of the bus-powered version becomes a retail reality.
StorageWhen a major industry slowdown occurs, big companies tend to slowdown their mid-term and long-term capacity related investments. This is exactly what happened to SK hynix's Yongin Semiconductor Cluster, a major project announced in April 2021 and valued at $106 billion. While development of the site has been largely completed, only 35% of the initial shell building has been constructed, according to the Korean Ministry of Trade, Industry, and Energy.
"Approximately 35% of Fab 1 has been completed so far and site renovation is in smooth progress," a statement by the Korean Ministry of Trade, Industry, and Energy reads. "By 2046, over KRW 120 trillion ($90 billion today, $106 billion in 2021) in investment will be poured to complete Fabs 1 through 4, and construction of Fab 1's production line will commence in March next year. Once completed, the infrastructure will rank as the world's largest three-story fab."
The new semiconductor fabrication cluster by SK hynix announced almost exactly three years ago is primarily meant to be used to make DRAM for PCs, mobile devices, and servers using advanced extreme ultraviolet lithography (EUV) process technologies. The cluster, located near Yongin, South Korea, is intended to consist of four large fabs situated on a 4.15 million m2 site. With a planned capacity of approximately 800,000 wafer starts per month (WSPMs), it is set to be one of the world's largest semiconductor production hubs.
With that said, SK hynix's construction progress has been slower than the company first projected. The first fab in the complex was originally meant to come online in 2025, with construction starting in the fourth quarter of 2021. However, SK hynix began to cut its capital expenditures in the second half of 2022, and the Yongin Semiconductor Cluster project fell a victim of that cut. To be sure, the site continues to be developed, just at a slower pace; which is why some 35% of the first fab shell has been built at this point.
If completed as planned in 2021, the first phase of SK hynix Yongin operations would have been a major memory production facility costing $25 billion, equipped with EUV tools, and capable of 200,000-WSPM, according to reports from 2021.
Sources: Korean Ministry of Trade, Industry, and Energy; ComputerBase
MemoryKioxia's booth at FMS 2024 was a busy one with multiple technology demonstrations keeping visitors occupied. A walk-through of the BiCS 8 manufacturing process was the first to grab my attention. Kioxia and Western Digital announced the sampling of BiCS 8 in March 2023. We had touched briefly upon its CMOS Bonded Array (CBA) scheme in our coverage of Kioxial's 2Tb QLC NAND device and coverage of Western Digital's 128 TB QLC enterprise SSD proof-of-concept demonstration. At Kioxia's booth, we got more insights.
Traditionally, fabrication of flash chips involved placement of the associate logic circuitry (CMOS process) around the periphery of the flash array. The process then moved on to putting the CMOS under the cell array, but the wafer development process was serialized with the CMOS logic getting fabricated first followed by the cell array on top. However, this has some challenges because the cell array requires a high-temperature processing step to ensure higher reliability that can be detrimental to the health of the CMOS logic. Thanks to recent advancements in wafer bonding techniques, the new CBA process allows the CMOS wafer and cell array wafer to be processed independently in parallel and then pieced together, as shown in the models above.
The BiCS 8 3D NAND incorporates 218 layers, compared to 112 layers in BiCS 5 and 162 layers in BiCS 6. The company decided to skip over BiCS 7 (or, rather, it was probably a short-lived generation meant as an internal test vehicle). The generation retains the four-plane charge trap structure of BiCS 6. In its TLC avatar, it is available as a 1 Tbit device. The QLC version is available in two capacities - 1 Tbit and 2 Tbit.
Kioxia also noted that while the number of layers (218) doesn't compare favorably with the latest layer counts from the competition, its lateral scaling / cell shrinkage has enabled it to be competitive in terms of bit density as well as operating speeds (3200 MT/s). For reference, the latest shipping NAND from Micron - the G9 - has 276 layers with a bit density in TLC mode of 21 Gbit/mm2, and operates at up to 3600 MT/s. However, its 232L NAND operates only up to 2400 MT/s and has a bit density of 14.6 Gbit/mm2.
It must be noted that the CBA hybrid bonding process has advantages over the current processes used by other vendors - including Micron's CMOS under array (CuA) and SK hynix's 4D PUC (periphery-under-chip) developed in the late 2010s. It is expected that other NAND vendors will also move eventually to some variant of the hybrid bonding scheme used by Kioxia.
StorageWhen Western Digital introduced its Ultrastar DC SN861 SSDs earlier this year, the company did not disclose which controller it used for these drives, which made many observers presume that WD was using an in-house controller. But a recent teardown of the drive shows that is not the case; instead, the company is using a controller from Fadu, a South Korean company founded in 2015 that specializes on enterprise-grade turnkey SSD solutions.
The Western Digital Ultrastar DC SN861 SSD is aimed at performance-hungry hyperscale datacenters and enterprise customers which are adopting PCIe Gen5 storage devices these days. And, as uncovered in photos from a recent Storage Review article, the drive is based on Fadu's FC5161 NVMe 2.0-compliant controller. The FC5161 utilizes 16 NAND channels supporting an ONFi 5.0 2400 MT/s interface, and features a combination of enterprise-grade capabilities (OCP Cloud Spec 2.0, SR-IOV, up to 512 name spaces for ZNS support, flexible data placement, NVMe-MI 1.2, advanced security, telemetry, power loss protection) not available on other off-the-shelf controllers – or on any previous Western Digital controllers.
The Ultrastar DC SN861 SSD offers sequential read speeds up to 13.7 GB/s as well as sequential write speeds up to 7.5 GB/s. As for random performance, it boasts with an up to 3.3 million random 4K read IOPS and up to 0.8 million random 4K write IOPS. The drives are available in capacities between 1.6 TB and 7.68 TB with one or three drive writes per day (DWPD) over five years rating as well as in U.2 and E1.S form-factors.
While the two form factors of the SN861 share a similar technical design, Western Digital has tailored each version for distinct workloads: the E1.S supports FDP and performance enhancements specifically for cloud environments. By contrast, the U.2 model is geared towards high-performance enterprise tasks and emerging applications like AI.
Without any doubts, Western Digital's Ultrastar DC SN861 is a feature-rich high-performance enterprise-grade SSD. It has another distinctive feature: a 5W idle power consumption, which is rather low by the standards of enterprise-grade drives (e.g., it is 1W lower compared to the SN840). While the difference with predecessors may be just 1W, hyperscalers deploy thousands of drives and for their TCO every watt counts.
Western Digital's Ultrastar DC SN861 SSDs are now available for purchase to select customers (such as Meta) and to interested parties. Prices are unknown, but they will depend on such factors as volumes.
Sources: Fadu, Storage Review
StorageThe CXL consortium has had a regular presence at FMS (which rechristened itself from 'Flash Memory Summit' to the 'Future of Memory and Storage' this year). Back at FMS 2022, the company had announced v3.0 of the CXL specifications. This was followed by CXL 3.1's introduction at Supercomputing 2023. Having started off as a host to device interconnect standard, it had slowly subsumed other competing standards such as OpenCAPI and Gen-Z. As a result, the specifications started to encompass a wide variety of use-cases by building a protocol on top of the the ubiquitous PCIe expansion bus. The CXL consortium comprises of heavyweights such as AMD and Intel, as well as a large number of startup companies attempting to play in different segments on the device side. At FMS 2024, CXL had a prime position in the booth demos of many vendors.
The migration of server platforms from DDR4 to DDR5, along with the rise of workloads demanding large RAM capacity (but not particularly sensitive to either memory bandwidth or latency), has opened up memory expansion modules as one of the first set of widely available CXL devices. Over the last couple of years, we have had product announcements from Samsung and Micron in this area.
At FMS 2024, SK hynix was showing off their DDR5-based CMM-DDR5 CXL memory module with a 128 GB capacity. The company was also detailing their associated Heterogeneous Memory Software Development Kit (HMSDK) - a set of libraries and tools at both the kernel and user levels aimed at increasing the ease of use of CXL memory. This is achieved in part by considering the memory pyramid / hierarchy and relocating the data between the server's main memory (DRAM) and the CXL device based on usage frequency.
The CMM-DDR5 CXL memory module comes in the SDFF form-factor (E3.S 2T) with a PCIe 3.0 x8 host interface. The internal memory is based on 1α technology DRAM, and the device promises DDR5-class bandwidth and latency within a single NUMA hop. As these memory modules are meant to be used in datacenters and enterprises, the firmware includes features for RAS (reliability, availability, and serviceability) along with secure boot and other management features.
SK hynix was also demonstrating Niagara 2.0 - a hardware solution (currently based on FPGAs) to enable memory pooling and sharing - i.e, connecting multiple CXL memories to allow different hosts (CPUs and GPUs) to optimally share their capacity. The previous version only allowed capacity sharing, but the latest version enables sharing of data also. SK hynix had presented these solutions at the CXL DevCon 2024 earlier this year, but some progress seems to have been made in finalizing the specifications of the CMM-DDR5 at FMS 2024.
Micron had unveiled the CZ120 CXL Memory Expansion Module last year based on the Microchip SMC 2000 series CXL memory controller. At FMS 2024, Micron and Microchip had a demonstration of the module on a Granite Rapids server.
Additional insights into the SMC 2000 controller were also provided.
The CXL memory controller also incorporates DRAM die failure handling, and Microchip also provides diagnostics and debug tools to analyze failed modules. The memory controller also supports ECC, which forms part of the enterprise... Storage
Western Digital's BiCS8 218-layer 3D NAND is being put to good use in a wide range of client and enterprise platforms, including WD's upcoming Gen 5 client SSDs and 128 TB-class datacenter SSD. On the external storage front, the company demonstrated four different products: for card-based media, 4 TB microSDUC and 8 TB SDUC cards with UHS-I speeds, and on the portable SSD front we had two 16 TB drives. One will be a SanDisk Desk Drive with external power, and the other in the SanDisk Extreme Pro housing with a lanyard opening in the case.
All of these are using BiCS8 QLC NAND, though I did hear booth talk (as I was taking leave) that they were not supposed to divulge the use of QLC in these products. The 4 TB microSDUC and 8 TB SDUC cards are rated for UHS-I speeds. They are being marketed under the SanDisk Ultra branding.
The SanDisk Desk Drive is an external SSD with a 18W power adapter, and it has been in the market for a few months now. Initially launched in capacities up to 8 TB, Western Digital had promised a 16 TB version before the end of the year. It appears that the product is coming to retail quite soon. One aspect to note is that this drive has been using TLC for the SKUs that are currently in the market, so it appears unlikely that the 16 TB version would be QLC. The units (at least up to the 8 TB capacity point) come with two SN850XE drives. Given the recent introduction of the 8 TB SN850X, an 'E' version with tweaked firmware is likely to be present in the 16 TB Desk Drive.
The 16 TB portable SSD in the SanDisk Extreme housing was a technology demonstration. It is definitely the highest capacity bus-powered portable SSD demonstrated by any vendor at any trade show thus far. Given the 16 TB Desk Drive's imminent market introduction, it is just a matter of time before the technology demonstration of the bus-powered version becomes a retail reality.
Storage
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