Samsung Unveils 10.7Gbps LPDDR5X Memory - The Fastest Yet
Samsung today has announced that they have developed an even faster generation of LPDDR5X memory that is set to top out at LPDDR5X-10700 speeds. The updated memory is slated to offer 25% better performance and 30% greater capacity compared to existing mobile DRAM devices from the company. The new chips also appear to be tangibly faster than Micron's LPDDR5X memory and SK hynix's LPDDR5T chips.
Samsung's forthcoming LPDDR5X devices feature a data transfer rate of 10.7 GT/s as well as maximum capacity per stack of 32 GB. This allows Samsung's clients to equip their latest smartphones or laptops with 32 GB of low-power memory using just one DRAM package, which greatly simplifies their designs. Samsung says that 32 GB of memory will be particularly beneficial for on-device AI applications.
Samsung is using its latest-generation 12nm-class DRAM process technology to make its LPDDR5X-10700 devices, which allows the company to achieve the smallest LPDDR device size in the industry, the memory maker said.
In terms of power efficiency, Samsung claims that they have integrated multiple new power-saving features into the new LPDDR5X devices. These include an optimized power variation system that adjusts energy consumption based on workload, and expanded intervals for low-power mode that extend the periods of energy saving. These innovations collectively enhance power efficiency by 25% compared to earlier versions, benefiting mobile platforms by extending battery life, the company said.
“As demand for low-power, high-performance memory increases, LPDDR DRAM is expected to expand its applications from mainly mobile to other areas that traditionally require higher performance and reliability such as PCs, accelerators, servers and automobiles,” said YongCheol Bae, Executive Vice President of Memory Product Planning of the Memory Business at Samsung Electronics. “Samsung will continue to innovate and deliver optimized products for the upcoming on-device AI era through close collaboration with customers.”
Samsung plans to initiate mass production of the 10.7 GT/s LPDDR5X DRAM in the second half of this year. This follows a series of compatibility tests with mobile application processors and device manufacturers to ensure seamless integration into future products.
DRAM
Posted by The Techinical Support
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G.Skill Intros Low Latency DDR5 Memory Modules: CL30 at 6400 MT/s
G.Skill on Tuesday introduced its ultra-low-latency DDR5-6400 memory modules that feature a CAS latency of 30 clocks, which appears to be the industry's most aggressive timings yet for DDR5-6400 sticks. The modules will be available for both AMD and Intel CPU-based systems.
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G.Skill notes that since its modules are non-standard, they will not work with all systems but will operate on high-end motherboards with properly cooled CPUs.
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The sale of Intel's 1.18 million shares in Arm Holdings, as reported in a recent SEC filing, comes at a time when the company is struggling with substantial financial losses. Despite the $147 million generated from the sale, Intel reported a $120 million net loss on its equity investments for the quarter, which is a part of a larger $1.6 billion loss that Intel faced during this period.
In addition to selling its stake in Arm, Intel also exited its investment in ZeroFox and reduced its involvement with Astera Labs, a company known for developing connectivity platforms for enterprise hardware. These moves are in line with Intel's strategy to reduce costs and stabilize its financial position as it faces ongoing market challenges.
Despite the divestment, Intel's past investment in Arm was likely driven by strategic considerations. Arm Holdings is a significant force in the semiconductor industry, with its designs powering most mobile devices, and, for obvious reasons, Intel would like to address these. Intel and Arm are also collaborating on datacenter platforms tailored for Intel's 18A process technology. Additionally, Arm might view Intel as a potential licensee for its technologies and a valuable partner for other companies that license Arm's designs.
Intel's investment in Astera Labs was also a strategic one as the company probably wanted to secure steady supply of smart retimers, smart cable modems, and CXL memory controller, which are used in volumes in datacenters and Intel is certainly interested in selling as many datacenter CPUs as possible.
Intel's financial struggles were highlighted earlier this month when the company released a disappointing earnings report, which led to a 33% drop in its stock value, erasing billions of dollars of capitalization. To counter these difficulties, Intel announced plans to cut 15,000 jobs and implement other expense reductions. The company has also suspended its dividend, signaling the depth of its efforts to conserve cash and focus on recovery. When it comes to divestment of Arm stock, the need for immediate financial stabilization has presumably taken precedence, leading to the decision.
CPUs
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The demonstration of the optical SSD showed a slight loss in IOPS performance, but a significant advantage in the latency metric over the shipping enterprise SSD behind a copper network link. Obviously, there are advantages in wiring requirements and signal integrity maintenance with optical links.
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Storage
PCI-SIG Demonstrates PCIe 6.0 Interoperability at FMS 2024
As the deployment of PCIe 5.0 picks up steam in both datacenter and consumer markets, PCI-SIG is not sitting idle, and is already working on getting the ecosystem ready for the updats to the PCIe specifications. At FMS 2024, some vendors were even talking about PCIe 7.0 with its 128 GT/s capabilities despite PCIe 6.0 not even starting to ship yet. We caught up with PCI-SIG to get some updates on its activities and have a discussion on the current state of the PCIe ecosystem.
PCI-SIG has already made the PCIe 7.0 specifications (v 0.5) available to its members, and expects full specifications to be officially released sometime in 2025. The goal is to deliver a 128 GT/s data rate with up to 512 GBps of bidirectional traffic using x16 links. Similar to PCIe 6.0, this specification will also utilize PAM4 signaling and maintain backwards compatibility. Power efficiency as well as silicon die area are also being kept in mind as part of the drafting process.
The move to PAM4 signaling brings higher bit-error rates compared to the previous NRZ scheme. This made it necessary to adopt a different error correction scheme in PCIe 6.0 - instead of operating on variable length packets, PCIe 6.0's Flow Control Unit (FLIT) encoding operates on fixed size packets to aid in forward error correction. PCIe 7.0 retains these aspects.
The integrators list for the PCIe 6.0 compliance program is also expected to come out in 2025, though initial testing is already in progress. This was evident by the FMS 2024 demo involving Cadence's 3nm test chip for its PCIe 6.0 IP offering along with Teledyne Lecroy's PCIe 6.0 analyzer. These timelines track well with the specification completion dates and compliance program availability for previous PCIe generations.
We also received an update on the optical workgroup - while being optical-technology agnostic, the WG also intends to develop technology-specific form-factors including pluggable optical transceivers, on-board optics, co-packaged optics, and optical I/O. The logical and electrical layers of the PCIe 6.0 specifications are being enhanced to accommodate the new optical PCIe standardization and this process will also be done with PCIe 7.0 to coincide with that standard's release next year.
The PCI-SIG also has ongoing cabling initiatives. On the consumer side, we have seen significant traction for Thunderbolt and external GPU enclosures. However, even datacenters and enterprise systems are moving towards cabling solutions as it becomes evident that disaggregation of components such as storage from the CPU and GPU are better for thermal design. Additionally maintaining signal integrity over longer distances becomes difficult for on-board signal traces. Cabling internal to the computing systems can help here.
OCuLink emerged as a good candidate and was adopted fairly widely as an internal link in server systems. It has even made an appearance in mini-PCs from some Chinese manufacturers in its external avatar for the consumer market, albeit with limited traction. As speeds increase, a widely-adopted standard for external PCIe peripherals (or even connecting components within a system) will become imperative.
Storage
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![](https://twitter.com/share?url=https://compbuddey.blogspot.com/2024/04/samsung-unveils-107gbps-lpddr5x-memory_29.html&text=Samsung Unveils 10.7Gbps LPDDR5X Memory - The Fastest Yet <p align="center"><a href="https://www.anandtech.com/show/21354/samsung-unveils-world-s-fastest-lpddr5x-memory-10-7-gt-s"><img src="https://images.anandtech.com/doci/21354/Samsung-10.7Gbps-LPDDR5X_dl3_crop_575px.jpg" alt="" /></a></p><p><p>Samsung today has announced that they have developed an even faster generation of LPDDR5X memory that is set to top out at LPDDR5X-10700 speeds. The updated memory is slated to offer 25% better performance and 30% greater capacity compared to existing mobile DRAM devices from the company. The new chips also appear to be tangibly faster than Micron's LPDDR5X memory and SK hynix's <a href="https://www.anandtech.com/show/21141/sk-hynix-ships-lpddr5t-9600-mts-for-smartphones">LPDDR5T</a> chips.</p>
<p>Samsung's forthcoming LPDDR5X devices feature a data transfer rate of 10.7 GT/s as well as maximum capacity per stack of 32 GB. This allows Samsung's clients to equip their latest smartphones or laptops with 32 GB of low-power memory using just one DRAM package, which greatly simplifies their designs. Samsung says that 32 GB of memory will be particularly beneficial for on-device AI applications.</p>
<p>Samsung is using its latest-generation 12nm-class DRAM process technology to make its LPDDR5X-10700 devices, which allows the company to achieve the smallest LPDDR device size in the industry, the memory maker said.</p>
<p>In terms of power efficiency, Samsung claims that they have integrated multiple new power-saving features into the new LPDDR5X devices. These include an optimized power variation system that adjusts energy consumption based on workload, and expanded intervals for low-power mode that extend the periods of energy saving. These innovations collectively enhance power efficiency by 25% compared to earlier versions, benefiting mobile platforms by extending battery life, the company said.</p>
<p>“As demand for low-power, high-performance memory increases, LPDDR DRAM is expected to expand its applications from mainly mobile to other areas that traditionally require higher performance and reliability such as PCs, accelerators, servers and automobiles,” said YongCheol Bae, Executive Vice President of Memory Product Planning of the Memory Business at Samsung Electronics. “Samsung will continue to innovate and deliver optimized products for the upcoming on-device AI era through close collaboration with customers.”</p>
<p>Samsung plans to initiate mass production of the 10.7 GT/s LPDDR5X DRAM in the second half of this year. This follows a series of compatibility tests with mobile application processors and device manufacturers to ensure seamless integration into future products.</p>
</p> DRAM){kind=link}
![](https://www.pinterest.com/pin/create/button/?url=https://compbuddey.blogspot.com/2024/04/samsung-unveils-107gbps-lpddr5x-memory_29.html&media=https://lh3.googleusercontent.com/blogger_img_proxy/AEn0k_vJ8vjB56oytVd1snotY0aB347cJKkiyADltQVLvPvSJZDUP5rIHIukNBovRs6r3zCQgXdeFZuI5PIpJ1H80okijFGOr_ZQQXul6xjwvCnLZbyMNUnQnJy6PUnYx31TvjisYFUKAwIAusC9d7TgC9GVi70tGXTs&description=Samsung Unveils 10.7Gbps LPDDR5X Memory - The Fastest Yet <p align="center"><a href="https://www.anandtech.com/show/21354/samsung-unveils-world-s-fastest-lpddr5x-memory-10-7-gt-s"><img src="https://images.anandtech.com/doci/21354/Samsung-10.7Gbps-LPDDR5X_dl3_crop_575px.jpg" alt="" /></a></p><p><p>Samsung today has announced that they have developed an even faster generation of LPDDR5X memory that is set to top out at LPDDR5X-10700 speeds. The updated memory is slated to offer 25% better performance and 30% greater capacity compared to existing mobile DRAM devices from the company. The new chips also appear to be tangibly faster than Micron's LPDDR5X memory and SK hynix's <a href="https://www.anandtech.com/show/21141/sk-hynix-ships-lpddr5t-9600-mts-for-smartphones">LPDDR5T</a> chips.</p>
<p>Samsung's forthcoming LPDDR5X devices feature a data transfer rate of 10.7 GT/s as well as maximum capacity per stack of 32 GB. This allows Samsung's clients to equip their latest smartphones or laptops with 32 GB of low-power memory using just one DRAM package, which greatly simplifies their designs. Samsung says that 32 GB of memory will be particularly beneficial for on-device AI applications.</p>
<p>Samsung is using its latest-generation 12nm-class DRAM process technology to make its LPDDR5X-10700 devices, which allows the company to achieve the smallest LPDDR device size in the industry, the memory maker said.</p>
<p>In terms of power efficiency, Samsung claims that they have integrated multiple new power-saving features into the new LPDDR5X devices. These include an optimized power variation system that adjusts energy consumption based on workload, and expanded intervals for low-power mode that extend the periods of energy saving. These innovations collectively enhance power efficiency by 25% compared to earlier versions, benefiting mobile platforms by extending battery life, the company said.</p>
<p>“As demand for low-power, high-performance memory increases, LPDDR DRAM is expected to expand its applications from mainly mobile to other areas that traditionally require higher performance and reliability such as PCs, accelerators, servers and automobiles,” said YongCheol Bae, Executive Vice President of Memory Product Planning of the Memory Business at Samsung Electronics. “Samsung will continue to innovate and deliver optimized products for the upcoming on-device AI era through close collaboration with customers.”</p>
<p>Samsung plans to initiate mass production of the 10.7 GT/s LPDDR5X DRAM in the second half of this year. This follows a series of compatibility tests with mobile application processors and device manufacturers to ensure seamless integration into future products.</p>
</p> DRAM){kind=link}
![](https://web.whatsapp.com/send?text=Samsung Unveils 10.7Gbps LPDDR5X Memory - The Fastest Yet <p align="center"><a href="https://www.anandtech.com/show/21354/samsung-unveils-world-s-fastest-lpddr5x-memory-10-7-gt-s"><img src="https://images.anandtech.com/doci/21354/Samsung-10.7Gbps-LPDDR5X_dl3_crop_575px.jpg" alt="" /></a></p><p><p>Samsung today has announced that they have developed an even faster generation of LPDDR5X memory that is set to top out at LPDDR5X-10700 speeds. The updated memory is slated to offer 25% better performance and 30% greater capacity compared to existing mobile DRAM devices from the company. The new chips also appear to be tangibly faster than Micron's LPDDR5X memory and SK hynix's <a href="https://www.anandtech.com/show/21141/sk-hynix-ships-lpddr5t-9600-mts-for-smartphones">LPDDR5T</a> chips.</p>
<p>Samsung's forthcoming LPDDR5X devices feature a data transfer rate of 10.7 GT/s as well as maximum capacity per stack of 32 GB. This allows Samsung's clients to equip their latest smartphones or laptops with 32 GB of low-power memory using just one DRAM package, which greatly simplifies their designs. Samsung says that 32 GB of memory will be particularly beneficial for on-device AI applications.</p>
<p>Samsung is using its latest-generation 12nm-class DRAM process technology to make its LPDDR5X-10700 devices, which allows the company to achieve the smallest LPDDR device size in the industry, the memory maker said.</p>
<p>In terms of power efficiency, Samsung claims that they have integrated multiple new power-saving features into the new LPDDR5X devices. These include an optimized power variation system that adjusts energy consumption based on workload, and expanded intervals for low-power mode that extend the periods of energy saving. These innovations collectively enhance power efficiency by 25% compared to earlier versions, benefiting mobile platforms by extending battery life, the company said.</p>
<p>“As demand for low-power, high-performance memory increases, LPDDR DRAM is expected to expand its applications from mainly mobile to other areas that traditionally require higher performance and reliability such as PCs, accelerators, servers and automobiles,” said YongCheol Bae, Executive Vice President of Memory Product Planning of the Memory Business at Samsung Electronics. “Samsung will continue to innovate and deliver optimized products for the upcoming on-device AI era through close collaboration with customers.”</p>
<p>Samsung plans to initiate mass production of the 10.7 GT/s LPDDR5X DRAM in the second half of this year. This follows a series of compatibility tests with mobile application processors and device manufacturers to ensure seamless integration into future products.</p>
</p> DRAM | https://compbuddey.blogspot.com/2024/04/samsung-unveils-107gbps-lpddr5x-memory_29.html){kind=link}
![](mailto:?subject=Samsung Unveils 10.7Gbps LPDDR5X Memory - The Fastest Yet <p align="center"><a href="https://www.anandtech.com/show/21354/samsung-unveils-world-s-fastest-lpddr5x-memory-10-7-gt-s"><img src="https://images.anandtech.com/doci/21354/Samsung-10.7Gbps-LPDDR5X_dl3_crop_575px.jpg" alt="" /></a></p><p><p>Samsung today has announced that they have developed an even faster generation of LPDDR5X memory that is set to top out at LPDDR5X-10700 speeds. The updated memory is slated to offer 25% better performance and 30% greater capacity compared to existing mobile DRAM devices from the company. The new chips also appear to be tangibly faster than Micron's LPDDR5X memory and SK hynix's <a href="https://www.anandtech.com/show/21141/sk-hynix-ships-lpddr5t-9600-mts-for-smartphones">LPDDR5T</a> chips.</p>
<p>Samsung's forthcoming LPDDR5X devices feature a data transfer rate of 10.7 GT/s as well as maximum capacity per stack of 32 GB. This allows Samsung's clients to equip their latest smartphones or laptops with 32 GB of low-power memory using just one DRAM package, which greatly simplifies their designs. Samsung says that 32 GB of memory will be particularly beneficial for on-device AI applications.</p>
<p>Samsung is using its latest-generation 12nm-class DRAM process technology to make its LPDDR5X-10700 devices, which allows the company to achieve the smallest LPDDR device size in the industry, the memory maker said.</p>
<p>In terms of power efficiency, Samsung claims that they have integrated multiple new power-saving features into the new LPDDR5X devices. These include an optimized power variation system that adjusts energy consumption based on workload, and expanded intervals for low-power mode that extend the periods of energy saving. These innovations collectively enhance power efficiency by 25% compared to earlier versions, benefiting mobile platforms by extending battery life, the company said.</p>
<p>“As demand for low-power, high-performance memory increases, LPDDR DRAM is expected to expand its applications from mainly mobile to other areas that traditionally require higher performance and reliability such as PCs, accelerators, servers and automobiles,” said YongCheol Bae, Executive Vice President of Memory Product Planning of the Memory Business at Samsung Electronics. “Samsung will continue to innovate and deliver optimized products for the upcoming on-device AI era through close collaboration with customers.”</p>
<p>Samsung plans to initiate mass production of the 10.7 GT/s LPDDR5X DRAM in the second half of this year. This follows a series of compatibility tests with mobile application processors and device manufacturers to ensure seamless integration into future products.</p>
</p> DRAM&body=https://compbuddey.blogspot.com/2024/04/samsung-unveils-107gbps-lpddr5x-memory_29.html){kind=link}
When Western Digital introduced its Ultrastar DC SN861 SSDs earlier this year, the company did not disclose which controller it used for these drives, which made many observers presume that WD was using an in-house controller. But a recent teardown of the drive shows that is not the case; instead, the company is using a controller from Fadu, a South Korean company founded in 2015 that specializes on enterprise-grade turnkey SSD solutions.
The Western Digital Ultrastar DC SN861 SSD is aimed at performance-hungry hyperscale datacenters and enterprise customers which are adopting PCIe Gen5 storage devices these days. And, as uncovered in photos from a recent Storage Review article, the drive is based on Fadu's FC5161 NVMe 2.0-compliant controller. The FC5161 utilizes 16 NAND channels supporting an ONFi 5.0 2400 MT/s interface, and features a combination of enterprise-grade capabilities (OCP Cloud Spec 2.0, SR-IOV, up to 512 name spaces for ZNS support, flexible data placement, NVMe-MI 1.2, advanced security, telemetry, power loss protection) not available on other off-the-shelf controllers – or on any previous Western Digital controllers.
The Ultrastar DC SN861 SSD offers sequential read speeds up to 13.7 GB/s as well as sequential write speeds up to 7.5 GB/s. As for random performance, it boasts with an up to 3.3 million random 4K read IOPS and up to 0.8 million random 4K write IOPS. The drives are available in capacities between 1.6 TB and 7.68 TB with one or three drive writes per day (DWPD) over five years rating as well as in U.2 and E1.S form-factors.
While the two form factors of the SN861 share a similar technical design, Western Digital has tailored each version for distinct workloads: the E1.S supports FDP and performance enhancements specifically for cloud environments. By contrast, the U.2 model is geared towards high-performance enterprise tasks and emerging applications like AI.
Without any doubts, Western Digital's Ultrastar DC SN861 is a feature-rich high-performance enterprise-grade SSD. It has another distinctive feature: a 5W idle power consumption, which is rather low by the standards of enterprise-grade drives (e.g., it is 1W lower compared to the SN840). While the difference with predecessors may be just 1W, hyperscalers deploy thousands of drives and for their TCO every watt counts.
Western Digital's Ultrastar DC SN861 SSDs are now available for purchase to select customers (such as Meta) and to interested parties. Prices are unknown, but they will depend on such factors as volumes.
Sources: Fadu, Storage Review
Storage
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The Endorfy Fortis 5 Dual Fan CPU Cooler Review: Towering Value Standard CPU coolers, while adequate for managing basic thermal loads, often fall short in terms of noise reduction and superior cooling efficiency. This limitation drives advanced users and system builders to seek aftermarket solutions tailored to their specific needs. The high-end aftermarket cooler market is highly competitive, with manufacturers striving to offer products with exceptional performance.
Endorfy, previously known as SilentiumPC, is a Polish manufacturer that has undergone a significant transformation to expand its presence in global markets. The brand is known for delivering high-performance cooling solutions with a strong focus on balancing efficiency and affordability. By rebranding as Endorfy, the company aims to enter premium market segments while continuing to offer reliable, high-quality cooling products.
SilentiumPC became very popular in the value/mainstream segments of the PC market with their products, the spearhead of which probably was the Fera 5 cooler that we reviewed a little over two years ago and had a remarkable value for money. Today’s review places Endorfy’s largest CPU cooler, the Fortis 5 Dual Fan, on our laboratory test bench. The Fortis 5 is the largest CPU air cooler the company currently offers and is significantly more expensive than the Fera 5, yet it still is a single-tower cooler that strives to strike a balance between value, compatibility, and performance.
Cases/Cooling/PSUs
U.S. Signs $1.5B in CHIPS Act Agreements With Amkor and SKhynix for Chip Packaging Plants
Under the CHIPS & Science Act, the U.S. government provided tens of billions of dollars in grants and loans to the world's leading maker of chips, such as Intel, Samsung, and TSMC, which will significantly expand the country's semiconductor production industry in the coming years. However, most chips are typically tested, assembled, and packaged in Asia, which has left the American supply chain incomplete. Addressing this last gap in the government's domestic chip production plans, these past couple of weeks the U.S. government signed memorandums of understanding worth about $1.5 billion with Amkor and SK hynix to support their efforts to build chip packaging facilities in the U.S.
Amkor to Build Advanced Packaging Facility with Apple in Mind
Amkor plans to build a $2 billion advanced packaging facility near Peoria, Arizona, to test and assemble chips produced by TSMC at its Fab 21 near Phoenix, Arizona. The company signed a MOU that offers $400 million in direct funding and access to $200 million in loans under the CHIPS & Science Act. In addition, the company plans to take advantage of a 25% investment tax credit on eligible capital expenditures.
Set to be strategically positioned near TSMC's upcoming Fab 21 complex in Arizona, Amkor's Peoria facility will occupy 55 acres and, when fully completed, will feature over 500,000 square feet (46,451 square meters) of cleanroom space, more than twice the size of Amkor's advanced packaging site in Vietnam. Although the company has not disclosed the exact capacity or the specific technologies the facility will support, it is expected to cater to a wide range of industries, including automotive, high-performance computing, and mobile technologies. This suggests the new plant will offer diverse packaging solutions, including traditional, 2.5D, and 3D technologies.
Amkor has collaborated extensively with Apple on the vision and initial setup of the Peoria facility, as Apple is slated to be the facility's first and largest customer, marking a significant commitment from the tech giant. This partnership highlights the importance of the new facility in reinforcing the U.S. semiconductor supply chain and positioning Amkor as a key partner for companies relying on TSMC's manufacturing capabilities. The project is expected to generate around 2,000 jobs and is scheduled to begin operations in 2027.
SK hynix to Build HBM4 in the U.S.
This week SK hynix also signed a preliminary agreement with the U.S. government to receive up to $450 million in direct funding and $500 million in loans to build an advanced memory packaging facility in West Lafayette, Indiana.
The proposed facility is scheduled to begin operations in 2028, which means that it will assemble HBM4 or HBM4E memory. Meanwhile, DRAM devices for high bandwidth memory (HBM) stacks will still be produced in South Korea. Nonetheless, packing finished HBM4/HBM4E in the U.S. and possibly integrating these memory modules with high-end processors is a big deal.
In addition to building its packaging plant, SK hynix plans to collaborate with Purdue University and other local research institutions to advance semiconductor technology and packaging innovations. This partnership is intended to bolster research and development in the region, positioning the facility as a hub for AI technology and skilled employment.
Semiconductors
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