Samsung Electronics has started mass production of its 9th generation of V-NAND memory. The first dies based on their latest NAND tech come in a 1 Tb capacity using a triple-level cell (TLC) architecture, with data transfer rates as high as 3.2 GT/s. The new 3D TLC NAND memory will initially be used to build high-capacity and high-performance SSDs, which will help to solidify Samsung's position in the storage market.
Diving right in, Samsung is conspicuously avoiding to list the number of layers in their latest generation NAND, which is the principle driving factor in increasing capacity generation-on-generation. The company's current 8th gen V-NAND is 236 layers – similar to its major competitors – and word on the street is that 9th gen V-NAND ups that to 290 layers, though this remains to be confirmed.
Regardless, Samsung says that its 9th generation V-NAND memory boasts an approximate 50% improvement in bit density over its 8th generation predecessor. Driving this gains, the company cites the miniaturization of the cell size, as well as the integration of enhanced memory cell technologies that reduce interference and extend the lifespan of the cells. With their latest NAND technology, Samsung has also been able to eliminate dummy channel holes, thus reducing the planar area of the memory cells.
Interestingly, today's announcement also marks the first time that Samsung has publicly confirmed their use of string stacking in their NAND, referring to it as their "double-stack structure." The company is widely believed to have been using sting stacking back in their 8th generation NAND as well, however this was never confirmed by the company. Regardless, the use of string stacking is only going to increase from here, as vendors look to keep adding layers to their NAND dies, while manufacturing variability and channel hole tolerances make it difficult to produce more than 150-200 layers in a single stack.
Samsung TLC V- NAND Flash Memory | ||
9th Gen V-NAND | 8th Gen V-NAND | |
Layers | 290? | 236 |
Decks | 2 (x145) | 2 (x118) |
Die Capacity | 1 Tbit | 1 Tbit |
Die Size (mm2) | ?mm2 | ?mm2 |
Density (Gbit/mm2) | ? | ? |
I/O Speed | 3.2 GT/s (Toggle 5.1) |
2.4 GT/s (Toggle 5.0) |
Planes | 6? | 4 |
CuA / PuC | Yes | Yes |
Speaking of channel holes, another key technological enhancement in the 9th gen V-NAND is Samsung's advanced 'channel hole etching' technology. This process improves manufacturing productivity by enabling the simultaneous creation of electron pathways within a double-stack structure. This method is crucial as it enables efficient drilling through more layers, which is increasingly important as cell layers are added.
The latest V-NAND also features the introduction of a faster NAND flash interface, Toggle DDR 5.1, which boosts peak data transfer rates by 33% to 3.2 GT/s, or almost 400MB/sec for a single die. Additionally, 9th gen V-NAND's power consumption has been reduced by 10%, according to Samsung. Though Samsung doesn't state under what conditions – presumably, this is at iso-frequency rather than max frequency.
Samsung's launch of 1Tb TLC V-NAND is set to be followed by the release of a quad-level cell (QLC) model later this year.
"We are excited to deliver the industry’s first 9th-gen V-NAND which will bring future... SSDs
Lexar SL500 Portable SSD Review: Silicon Motion SM2320 and YMTC NAND in a Potent Package Lexar has a long history of serving the flash-based consumer storage market in the form of SSDs, memory cards, and USB flash drives. After having started out as a Micron brand, the company was acquired by Longsys which has diversified its product lineup with regular introduction of new products. Recently, the company announced a number of portable SSDs targeting different market segments. The Lexar SL500 Portable SSD is one of the moderately priced 20 Gbps PSSDs in that set. The SL500 is able to achieve its price point thanks to the use of a native USB flash controller - the Silicon Motion SM2320. The unique aspect is the use of YMTC 3D TLC NAND (compared to the usual Micron or BiCS NAND that we have seen in previous SM2320-based PSSDs). Read on for a detailed look at the SL500, including an analysis of its internals and evaluation of its performance consistency, power consumption, and thermal profile. Storage
The Intel Core Ultra 7 155H Review: Meteor Lake Marks A Fresh Start To Mobile CPUs One of the most significant talking points of the last six months in mobile computing has been Intel and their disaggregated Meteor Lake SoC architecture. Meteor Lake, along with the new Core and Core Ultra naming scheme, also heralds the dawn of their first tiled architecture for the mobile landscape on the latest Intel 4 node with Foveros packaging. In December last year, Intel unveiled their premier Meteor lake-based Core Ultra H series, with five SKUs ranging from two with 4P+8E+2LP/18T and three with 6P+8E+2LP/22T models. Since then, many vendors and manufacturers have launched notebooks capitalizing on Intel's latest multi-tiled Meteor Lake SoC architecture as the heart of power and performance, driving their latest models into 2024. Today, we will focus on an attractive ultrabook via the ASUS Zenbook 14 OLED (UX3405MA), which features a thin and light design and is powered by Intel's latest Meteor Lake Core Ultra 7 155H processor. While much of the attention is going to come on how the Intel Core Ultra 7 155H with its 6P+8E+2LP/22T configuration and 8 Arc Xe integrated graphics cores will perform, the ASUS Zenbook 14 OLED UX3405MA has plenty of features within its sleek Ponder Blue colored shell to make it very interesting. Included is a 14" 3K (2880 x 1800) touchscreen OLED panel with a 120 Hz refresh rate, 32 GB of LPDDR5X memory (soldered), and a 1 TB NVMe M.2 SSD for storage. CPUs
G.Skill on Tuesday introduced its ultra-low-latency DDR5-6400 memory modules that feature a CAS latency of 30 clocks, which appears to be the industry's most aggressive timings yet for DDR5-6400 sticks. The modules will be available for both AMD and Intel CPU-based systems.
With every new generation of DDR memory comes an increase in data transfer rates and an extension of relative latencies. While for the vast majority of applications, the increased bandwidth offsets the performance impact of higher timings, there are applications that favor low latencies. However, shrinking latencies is sometimes harder than increasing data transfer rates, which is why low-latency modules are rare.
Nonetheless, G.Skill has apparently managed to cherry-pick enough DDR5 memory chips and build appropriate printed circuit boards to produce DDR5-6400 modules with CL30 timings, which are substantially lower than the CL46 timings recommended by JEDEC for this speed bin. This means that while JEDEC-standard modules have an absolute latency of 14.375 ns, G.Skill's modules can boast a latency of just 9.375 ns – an approximately 35% decrease.
G.Skill's DDR5-6400 CL30 39-39-102 modules have a capacity of 16 GB and will be available in 32 GB dual-channel kits, though the company does not disclose voltages, which are likely considerably higher than those standardized by JEDEC.
The company plans to make its DDR5-6400 modules available both for AMD systems with EXPO profiles (Trident Z5 Neo RGB and Trident Z5 Royal Neo) and for Intel-powered PCs with XMP 3.0 profiles (Trident Z5 RGB and Trident Z5 Royal). For AMD AM5 systems that have a practical limitation of 6000 MT/s – 6400 MT/s for DDR5 memory (as this is roughly as fast as AMD's Infinity Fabric can operate at with a 1:1 ratio), the new modules will be particularly beneficial for AMD's Ryzen 7000 and Ryzen 9000-series processors.
G.Skill notes that since its modules are non-standard, they will not work with all systems but will operate on high-end motherboards with properly cooled CPUs.
The new ultra-low-latency memory kits will be available worldwide from G.Skill's partners starting in late August 2024. The company did not disclose the pricing of these modules, but since we are talking about premium products that boast unique specifications, they are likely to be priced accordingly.
MemoryMicrochip recently announced the availability of their second PCIe Gen 5 enterprise SSD controller - the Flashtec 5016. Like the 4016, this is also a 16-channel controller, but there are some key updates:
Microchip's enterprise SSD controllers provide a high level of flexibility to SSD vendors by providing them with significant horsepower and accelerators. The 5016 includes Cortex-A53 cores for SSD vendors to run custom applications relevant to SSD management. However, compared to the Gen4 controllers, there are two additional cores in the CPU cluster. The DRAM subsystem includes ECC support (both out-of-band and inline, as desired by the SSD vendor).
At FMS 2024, the company demonstrated an application of the neural network engines embedded in the Gen5 controllers. Controllers usually employ a 'read-retry' operation with altered read-out voltages for flash reads that do not complete successfully. Microchip implemented a machine learning approach to determine the read-out voltage based on the health history of the NAND block using the NN engines in the controller. This approach delivers tangible benefits for read latency and power consumption (thanks to a smaller number of errors on the first read).
The 4016 and 5016 come with a single-chip root of trust implementation for hardware security. A secure boot process with dual-signature authentication ensures that the controller firmware is not maliciously altered in the field. The company also brought out the advantages of their controller's implementation of SR-IOV, flexible data placement, and zoned namespaces along with their 'credit engine' scheme for multi-tenant cloud workloads. These aspects were also brought out in other demonstrations.
Microchip's press release included quotes from the usual NAND vendors - Solidigm, Kioxia, and Micron. On the customer front, Longsys has been using Flashtec controllers in their enterprise offerings along with YMTC NAND. It is likely that this collaboration will continue further using the new 5016 controller.
Storage
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