Introspect this week introduced its M5512 GDDR7 memory test system, which is designed for testing GDDR7 memory controllers, physical interface, and GDDR7 SGRAM chips. The tool will enable memory and processor manufacturers to verify that their products perform as specified by the standard.
One of the crucial phases of a processor design bring up is testing its standard interfaces, such as PCIe, DisplayPort, or GDDR is to ensure that they behave as specified both logically and electrically and achieve designated performance. Introspect's M5512 GDDR7 memory test system is designed to do just that: test new GDDR7 memory devices, troubleshoot protocol issues, assess signal integrity, and conduct comprehensive memory read/write stress tests.
The product will be quite useful for designers of GPUs/SoCs, graphics cards, PCs, network equipment and memory chips, which will speed up development of actual products that rely on GDDR7 memory. For now, GPU and SoC designers as well as memory makers use highly-custom setups consisting of many tools to characterize signal integrity as well as conduct detailed memory read/write functional stress testing, which are important things at this phase of development. But usage of a single tool greatly speeds up all the processes and gives a more comprehensive picture to specialists.
The M5512 GDDR7 Memory Test System is a desktop testing and measurement device that is equippped with 72 pins capable of functioning at up to 40 Gbps in PAM3 mode, as well as offering a virtual GDDR7 memory controller. The device features bidirectional circuitry for executing read and write operations, and every pin is equipped with an extensive range of analog characterization features, such as skew injection with femto-second resolution, voltage control with millivolt resolution, programmable jitter injection, and various eye margining features critical for AC characterization and conformance testing. Furthermore, the system integrates device power supplies with precise power sequencing and ramping controls, providing a comprehensive solution for both AC characterization and memory functional stress testing on any GDDR7 device.
Introspects M5512 has been designed in close collaboration with JEDEC members working on the GDDR7 specification, so it promises to meet all of their requirements for compliance testing. Notably, however, the device does not eliminate need for interoperability tests and still requires companies to develop their own test algorithms, but it's still a significant tool for bootstrapping device development and getting it to the point where chips can begin interop testing.
“In its quest to support the industry on GDDR7 deployment, Introspect Technology has worked tirelessly in the last few years with JEDEC members to develop the M5512 GDDR7 Memory Test System,” said Dr. Mohamed Hafed, CEO at Introspect Technology.
GPUsKioxia's booth at FMS 2024 was a busy one with multiple technology demonstrations keeping visitors occupied. A walk-through of the BiCS 8 manufacturing process was the first to grab my attention. Kioxia and Western Digital announced the sampling of BiCS 8 in March 2023. We had touched briefly upon its CMOS Bonded Array (CBA) scheme in our coverage of Kioxial's 2Tb QLC NAND device and coverage of Western Digital's 128 TB QLC enterprise SSD proof-of-concept demonstration. At Kioxia's booth, we got more insights.
Traditionally, fabrication of flash chips involved placement of the associate logic circuitry (CMOS process) around the periphery of the flash array. The process then moved on to putting the CMOS under the cell array, but the wafer development process was serialized with the CMOS logic getting fabricated first followed by the cell array on top. However, this has some challenges because the cell array requires a high-temperature processing step to ensure higher reliability that can be detrimental to the health of the CMOS logic. Thanks to recent advancements in wafer bonding techniques, the new CBA process allows the CMOS wafer and cell array wafer to be processed independently in parallel and then pieced together, as shown in the models above.
The BiCS 8 3D NAND incorporates 218 layers, compared to 112 layers in BiCS 5 and 162 layers in BiCS 6. The company decided to skip over BiCS 7 (or, rather, it was probably a short-lived generation meant as an internal test vehicle). The generation retains the four-plane charge trap structure of BiCS 6. In its TLC avatar, it is available as a 1 Tbit device. The QLC version is available in two capacities - 1 Tbit and 2 Tbit.
Kioxia also noted that while the number of layers (218) doesn't compare favorably with the latest layer counts from the competition, its lateral scaling / cell shrinkage has enabled it to be competitive in terms of bit density as well as operating speeds (3200 MT/s). For reference, the latest shipping NAND from Micron - the G9 - has 276 layers with a bit density in TLC mode of 21 Gbit/mm2, and operates at up to 3600 MT/s. However, its 232L NAND operates only up to 2400 MT/s and has a bit density of 14.6 Gbit/mm2.
It must be noted that the CBA hybrid bonding process has advantages over the current processes used by other vendors - including Micron's CMOS under array (CuA) and SK hynix's 4D PUC (periphery-under-chip) developed in the late 2010s. It is expected that other NAND vendors will also move eventually to some variant of the hybrid bonding scheme used by Kioxia.
StorageAMD's FidelityFX Super Resolution 3 technology package introduced a plethora of enhancements to the FSR technology on Radeon RX 6000 and 7000-series graphics cards last September. But perfection has no limits, so this week, the company is rolling out its FSR 3.1 technology, which improves upscaling quality, decouples frame generation from AMD's upscaling, and makes it easier for developers to work with FSR.
Arguably, AMD's FSR 3.1's primary enhancement is its improved temporal upscaling image quality: compared to FSR 2.2, the image flickers less at rest and no longer ghosts when in movement. This is a significant improvement, as flickering and ghosting artifacts are particularly annoying. Meanwhile, FSR 3.1 has to be implemented by the game developer itself, and the first title to support this new technology sometime later this year is Ratchet & Clank: Rift Apart.
| Temporal Stability | |
| AMD FSR 2.2 | AMD FSR 3.1 |
| Ghosting Reduction | |
| AMD FSR 2.2 | AMD FSR 3.1 |
Another significant development brought by FSR 3.1 is its decoupling from the Frame Generation feature introduced by FSR 3. This capability relies on a form of AMD's Fluid Motion Frames (AFMF) optical flow interpolation. It uses temporal game data like motion vectors to add an additional frame between existing ones. This ability can lead to a performance boost of up to two times in compatible games, but it was initially tied to FSR 3 upscaling, which is a limitation. Starting from FSR 3.1, it will work with other upscaling methods, though AMD refrains from saying which methods and on which hardware for now. Also, the company does not disclose when it is expected to be implemented by game developers.
In addition, AMD is bringing support for FSR3 to Vulkan and Xbox Game Development Kit, enabling game developers on these platforms to use it. It also adds FSR 3.1 to the FidelityFX API, which simplifies debugging and enables forward compatibility with updated versions of FSR.
Upon its release in September 2023, AMD FSR 3 was initially supported by two titles, Forspoken and Immortals of Aveum, with ten more games poised to join them back then. Fast forward to six months later, the lineup has expanded to an impressive roster of 40 games either currently supporting or set to incorporate FSR 3 shortly. As of March 2024, FSR is supported by games like Avatar: Frontiers of Pandora, Starfield, The Last of Us Part I. Shortly, Cyberpunk 2077, Dying Light 2 Stay Human, Frostpunk 2, and Ratchet & Clank: Rift Apart will support FSR shortly.
Source: AMD
GPUs
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