Samsung Foundry Update: 2nm Unveil in June, Second-Gen SF3 3nm Hits Production This Year
As part of Samsung's Q1 earnings announcement, the company has outlined some of its foundry unit's key plans for the rest of the year. The company has confirmed that it remains on track to meeting its goal of starting mass production of chips on its SF3 (3 nm-class, 2nd Generation) technology in the second half of the year. Meanwhile in June, Samsung Foundry will formally unveil its SF2 (2 nm-class) process technology, which will offer a mix of performance and efficiency enhancements. Finally, the company the company is preparing a variation of its 4 nm-class technology for integration into stacked 3D designs.
SF2 To Be Unveiled In June
Samsung plans to disclose key details about its SF2 fabrication technology at the VLSI Symposium 2024 on June 19. This will be the company's second major process node based upon gate-all-around (GAA) multi-bridge channel field-effect transistors (MBCFET). Improving over its predecessor, SF2 will feature a 'unique epitaxial and integration process,' which will give the process node higher performance and lower leakage than traditional FinFET-based nodes (though Samsung isn't disclosing the specific node they're comparing it to).
Samsung says that SF2 increases performance of narrow transistors by 29% for N-type and 46% for P-type, and wide transistors by 11% and 23% respectively. Moreover, it reduces transistor global variation by 26% compared to FinFET technology, and cuts product leakage by approximately 50%. This process also sets the stage for future advancements in technology through enhanced design technology co-optimization (DTCO) collaboration with its customers.
One thing that Samsung has not mentioned in context of SF2 is backside power delivery, so at least for the moment, there is no indication that Samsung will be adopting this next-gen power routing feature for SF2.
Samsung says that the design infrastructure for SF2 – the PDK, EDA tools, and licensed IP – will be finalized in the second quarter of 2024. Once this happens, Samsung's chip development partners will be able to begin designing products for this production node. Meanwhile, Samsung is already working with Arm to co-optimize Arm's Cortex cores for the SF2 process.
SF3: On Track for 2H 2024
As the first fab to introduce a GAAFET-based node, Samsung has been on the cutting edge of chip construction. At the same time, however, that has also meant that they're the first fab to encounter and solve the inevitable teething issues that come with such a major transistor design change. Consequently, while Samsung's first-generation SF3E process technology has been in production for a little less than two years now, the only publicly-disclosed chips made on the process so far have been relatively small cryptocurrency mining chips – exactly the kind of pipecleaner parts that do well on a new process node.
But with that experience in hand, Samsung is preparing to move on to making bigger and better chips with GAAFETs. As part of their earnings announcements, the company has confirmed that their updated SF3 node, which was introduced last year, remains on schedule to enter production in the second half of 2024.
A more mature product from the get-go, SF3 is being prepared to be used for building larger processors, including datacenter products. Compared to its direct predecessor, SF4, SF3 promises a 22% performance boost at the same power and transistor count, or a 34% lower power at the same frequency and complexity, as well as a 21% logic area reduction. In general, Samsung pins a lot of hopes on this technology, as it's this generation of their 3nm-class technology that is poised to compete against TSMC's N3B and N3E nodes.
SF4: Ready for 3D Stacking
Finally, Samsung is also preparing a variant of their final FinFET technology node, SF4, for use in 3D chiplet stacking. As transistor density improvements have continued to slow, 3D chip stacking has emerged as a way to keep boosting overall chip performance, especially with modern, multi-tile processor desig... Semiconductors
![](https://twitter.com/share?url=https://compbuddey.blogspot.com/2024/05/samsung-foundry-update-2nm-unveil-in_1.html&text=Samsung Foundry Update: 2nm Unveil in June, Second-Gen SF3 3nm Hits Production This Year <p align="center"><a href="https://www.anandtech.com/show/21377/samsung-foundry-update-2nm-unveil-in-june-2nd-gen-3nm-hits-production-this-year"><img src="https://images.anandtech.com/doci/21377/samsung-foundry-wafer-semiconductor-678-1_575px.jpg" alt="" /></a></p><p><p>As part of Samsung's Q1 earnings announcement, the company has outlined some of its foundry unit's key plans for the rest of the year. The company has confirmed that it remains on track to meeting its goal of starting mass production of chips on its SF3 (3 nm-class, 2nd Generation) technology in the second half of the year. Meanwhile in June, Samsung Foundry will formally unveil its SF2 (2 nm-class) process technology, which will offer a mix of performance and efficiency enhancements. Finally, the company the company is preparing a variation of its 4 nm-class technology for integration into stacked 3D designs.</p>
<h3>SF2 To Be Unveiled In June</h3>
<p>Samsung plans to disclose key details about its SF2 fabrication technology at the VLSI Symposium 2024 on June 19. This will be the company's second major process node based upon gate-all-around (GAA) multi-bridge channel field-effect transistors (MBCFET). Improving over its predecessor, SF2 will feature a 'unique epitaxial and integration process,' which will give the process node higher performance and lower leakage than traditional FinFET-based nodes (though Samsung isn't disclosing the specific node they're comparing it to).</p>
<p style="text-align: center;"><a href="https://www.anandtech.com/show/21377/samsung-foundry-update-2nm-unveil-in-june-2nd-gen-3nm-hits-production-this-year"><img alt="" src="https://images.anandtech.com/doci/21377/samsung-foundry-roadmap.png" style="width: 100%;" /></a></p>
<p>Samsung says that SF2 increases performance of narrow transistors by 29% for N-type and 46% for P-type, and wide transistors by 11% and 23% respectively. Moreover, it reduces transistor global variation by 26% compared to FinFET technology, and cuts product leakage by approximately 50%. This process also sets the stage for future advancements in technology through enhanced design technology co-optimization (DTCO) collaboration with its customers.</p>
<p>One thing that Samsung has not mentioned in context of SF2 is backside power delivery, so at least for the moment, there is no indication that Samsung will be adopting this next-gen power routing feature for SF2.</p>
<p>Samsung says that the design infrastructure for SF2 – the PDK, EDA tools, and licensed IP – will be finalized in the second quarter of 2024. Once this happens, Samsung's chip development partners will be able to begin designing products for this production node. Meanwhile, Samsung is already working with Arm to co-optimize Arm's Cortex cores for the SF2 process.</p>
<h3>SF3: On Track for 2H 2024</h3>
<p>As the first fab to introduce a GAAFET-based node, Samsung has been on the cutting edge of chip construction. At the same time, however, that has also meant that they're the first fab to encounter and solve the inevitable teething issues that come with such a major transistor design change. Consequently, while Samsung's first-generation SF3E process technology has been in production for a little less than two years now, the only publicly-disclosed chips made on the process so far have been relatively small cryptocurrency mining chips – exactly the kind of pipecleaner parts that do well on a new process node.</p>
<p>But with that experience in hand, Samsung is preparing to move on to making bigger and better chips with GAAFETs. As part of their earnings announcements, the company has confirmed that their updated SF3 node, which was introduced last year, remains on schedule to enter production in the second half of 2024.</p>
<p align="center"><a href="https://www.anandtech.com/show/21377/samsung-foundry-update-2nm-unveil-in-june-2nd-gen-3nm-hits-production-this-year"><img alt="" src="https://images.anandtech.com/doci/21377/Samsung_Q1_Foundry.png" style="width: 100%;" /></a></p>
<p>A more mature product from the get-go, SF3 is being prepared to be used for building larger processors, including datacenter products. Compared to its direct predecessor, SF4, SF3 promises a 22% performance boost at the same power and transistor count, or a 34% lower power at the same frequency and complexity, as well as a 21% logic area reduction. In general, Samsung pins a lot of hopes on this technology, as it's this generation of their 3nm-class technology that is poised to compete against TSMC's N3B and N3E nodes.</p>
<h3>SF4: Ready for 3D Stacking</h3>
<p>Finally, Samsung is also preparing a variant of their final FinFET technology node, SF4, for use in 3D chiplet stacking. As transistor density improvements have continued to slow, 3D chip stacking has emerged as a way to keep boosting overall chip performance, especially with modern, multi-tile processor desig... Semiconductors){kind=link}
![](https://www.pinterest.com/pin/create/button/?url=https://compbuddey.blogspot.com/2024/05/samsung-foundry-update-2nm-unveil-in_1.html&media=https://lh3.googleusercontent.com/blogger_img_proxy/AEn0k_vno9pBfNfD4J2EYhESC1-B3oI6-B8FtPFiN5rmGiSdMjNouuEIN5LGiATSMw0LPph7woNMIt35qlJ7Sst52HxNiN9bZLh-NHTOniiEaWfxVFUMxr-awI6kZEK4jRXocblD9rk2Y3SN_BHr9Uz-aAcbpH2Yeq9vFGdBOfyHUdk&description=Samsung Foundry Update: 2nm Unveil in June, Second-Gen SF3 3nm Hits Production This Year <p align="center"><a href="https://www.anandtech.com/show/21377/samsung-foundry-update-2nm-unveil-in-june-2nd-gen-3nm-hits-production-this-year"><img src="https://images.anandtech.com/doci/21377/samsung-foundry-wafer-semiconductor-678-1_575px.jpg" alt="" /></a></p><p><p>As part of Samsung's Q1 earnings announcement, the company has outlined some of its foundry unit's key plans for the rest of the year. The company has confirmed that it remains on track to meeting its goal of starting mass production of chips on its SF3 (3 nm-class, 2nd Generation) technology in the second half of the year. Meanwhile in June, Samsung Foundry will formally unveil its SF2 (2 nm-class) process technology, which will offer a mix of performance and efficiency enhancements. Finally, the company the company is preparing a variation of its 4 nm-class technology for integration into stacked 3D designs.</p>
<h3>SF2 To Be Unveiled In June</h3>
<p>Samsung plans to disclose key details about its SF2 fabrication technology at the VLSI Symposium 2024 on June 19. This will be the company's second major process node based upon gate-all-around (GAA) multi-bridge channel field-effect transistors (MBCFET). Improving over its predecessor, SF2 will feature a 'unique epitaxial and integration process,' which will give the process node higher performance and lower leakage than traditional FinFET-based nodes (though Samsung isn't disclosing the specific node they're comparing it to).</p>
<p style="text-align: center;"><a href="https://www.anandtech.com/show/21377/samsung-foundry-update-2nm-unveil-in-june-2nd-gen-3nm-hits-production-this-year"><img alt="" src="https://images.anandtech.com/doci/21377/samsung-foundry-roadmap.png" style="width: 100%;" /></a></p>
<p>Samsung says that SF2 increases performance of narrow transistors by 29% for N-type and 46% for P-type, and wide transistors by 11% and 23% respectively. Moreover, it reduces transistor global variation by 26% compared to FinFET technology, and cuts product leakage by approximately 50%. This process also sets the stage for future advancements in technology through enhanced design technology co-optimization (DTCO) collaboration with its customers.</p>
<p>One thing that Samsung has not mentioned in context of SF2 is backside power delivery, so at least for the moment, there is no indication that Samsung will be adopting this next-gen power routing feature for SF2.</p>
<p>Samsung says that the design infrastructure for SF2 – the PDK, EDA tools, and licensed IP – will be finalized in the second quarter of 2024. Once this happens, Samsung's chip development partners will be able to begin designing products for this production node. Meanwhile, Samsung is already working with Arm to co-optimize Arm's Cortex cores for the SF2 process.</p>
<h3>SF3: On Track for 2H 2024</h3>
<p>As the first fab to introduce a GAAFET-based node, Samsung has been on the cutting edge of chip construction. At the same time, however, that has also meant that they're the first fab to encounter and solve the inevitable teething issues that come with such a major transistor design change. Consequently, while Samsung's first-generation SF3E process technology has been in production for a little less than two years now, the only publicly-disclosed chips made on the process so far have been relatively small cryptocurrency mining chips – exactly the kind of pipecleaner parts that do well on a new process node.</p>
<p>But with that experience in hand, Samsung is preparing to move on to making bigger and better chips with GAAFETs. As part of their earnings announcements, the company has confirmed that their updated SF3 node, which was introduced last year, remains on schedule to enter production in the second half of 2024.</p>
<p align="center"><a href="https://www.anandtech.com/show/21377/samsung-foundry-update-2nm-unveil-in-june-2nd-gen-3nm-hits-production-this-year"><img alt="" src="https://images.anandtech.com/doci/21377/Samsung_Q1_Foundry.png" style="width: 100%;" /></a></p>
<p>A more mature product from the get-go, SF3 is being prepared to be used for building larger processors, including datacenter products. Compared to its direct predecessor, SF4, SF3 promises a 22% performance boost at the same power and transistor count, or a 34% lower power at the same frequency and complexity, as well as a 21% logic area reduction. In general, Samsung pins a lot of hopes on this technology, as it's this generation of their 3nm-class technology that is poised to compete against TSMC's N3B and N3E nodes.</p>
<h3>SF4: Ready for 3D Stacking</h3>
<p>Finally, Samsung is also preparing a variant of their final FinFET technology node, SF4, for use in 3D chiplet stacking. As transistor density improvements have continued to slow, 3D chip stacking has emerged as a way to keep boosting overall chip performance, especially with modern, multi-tile processor desig... Semiconductors){kind=link}
![](https://web.whatsapp.com/send?text=Samsung Foundry Update: 2nm Unveil in June, Second-Gen SF3 3nm Hits Production This Year <p align="center"><a href="https://www.anandtech.com/show/21377/samsung-foundry-update-2nm-unveil-in-june-2nd-gen-3nm-hits-production-this-year"><img src="https://images.anandtech.com/doci/21377/samsung-foundry-wafer-semiconductor-678-1_575px.jpg" alt="" /></a></p><p><p>As part of Samsung's Q1 earnings announcement, the company has outlined some of its foundry unit's key plans for the rest of the year. The company has confirmed that it remains on track to meeting its goal of starting mass production of chips on its SF3 (3 nm-class, 2nd Generation) technology in the second half of the year. Meanwhile in June, Samsung Foundry will formally unveil its SF2 (2 nm-class) process technology, which will offer a mix of performance and efficiency enhancements. Finally, the company the company is preparing a variation of its 4 nm-class technology for integration into stacked 3D designs.</p>
<h3>SF2 To Be Unveiled In June</h3>
<p>Samsung plans to disclose key details about its SF2 fabrication technology at the VLSI Symposium 2024 on June 19. This will be the company's second major process node based upon gate-all-around (GAA) multi-bridge channel field-effect transistors (MBCFET). Improving over its predecessor, SF2 will feature a 'unique epitaxial and integration process,' which will give the process node higher performance and lower leakage than traditional FinFET-based nodes (though Samsung isn't disclosing the specific node they're comparing it to).</p>
<p style="text-align: center;"><a href="https://www.anandtech.com/show/21377/samsung-foundry-update-2nm-unveil-in-june-2nd-gen-3nm-hits-production-this-year"><img alt="" src="https://images.anandtech.com/doci/21377/samsung-foundry-roadmap.png" style="width: 100%;" /></a></p>
<p>Samsung says that SF2 increases performance of narrow transistors by 29% for N-type and 46% for P-type, and wide transistors by 11% and 23% respectively. Moreover, it reduces transistor global variation by 26% compared to FinFET technology, and cuts product leakage by approximately 50%. This process also sets the stage for future advancements in technology through enhanced design technology co-optimization (DTCO) collaboration with its customers.</p>
<p>One thing that Samsung has not mentioned in context of SF2 is backside power delivery, so at least for the moment, there is no indication that Samsung will be adopting this next-gen power routing feature for SF2.</p>
<p>Samsung says that the design infrastructure for SF2 – the PDK, EDA tools, and licensed IP – will be finalized in the second quarter of 2024. Once this happens, Samsung's chip development partners will be able to begin designing products for this production node. Meanwhile, Samsung is already working with Arm to co-optimize Arm's Cortex cores for the SF2 process.</p>
<h3>SF3: On Track for 2H 2024</h3>
<p>As the first fab to introduce a GAAFET-based node, Samsung has been on the cutting edge of chip construction. At the same time, however, that has also meant that they're the first fab to encounter and solve the inevitable teething issues that come with such a major transistor design change. Consequently, while Samsung's first-generation SF3E process technology has been in production for a little less than two years now, the only publicly-disclosed chips made on the process so far have been relatively small cryptocurrency mining chips – exactly the kind of pipecleaner parts that do well on a new process node.</p>
<p>But with that experience in hand, Samsung is preparing to move on to making bigger and better chips with GAAFETs. As part of their earnings announcements, the company has confirmed that their updated SF3 node, which was introduced last year, remains on schedule to enter production in the second half of 2024.</p>
<p align="center"><a href="https://www.anandtech.com/show/21377/samsung-foundry-update-2nm-unveil-in-june-2nd-gen-3nm-hits-production-this-year"><img alt="" src="https://images.anandtech.com/doci/21377/Samsung_Q1_Foundry.png" style="width: 100%;" /></a></p>
<p>A more mature product from the get-go, SF3 is being prepared to be used for building larger processors, including datacenter products. Compared to its direct predecessor, SF4, SF3 promises a 22% performance boost at the same power and transistor count, or a 34% lower power at the same frequency and complexity, as well as a 21% logic area reduction. In general, Samsung pins a lot of hopes on this technology, as it's this generation of their 3nm-class technology that is poised to compete against TSMC's N3B and N3E nodes.</p>
<h3>SF4: Ready for 3D Stacking</h3>
<p>Finally, Samsung is also preparing a variant of their final FinFET technology node, SF4, for use in 3D chiplet stacking. As transistor density improvements have continued to slow, 3D chip stacking has emerged as a way to keep boosting overall chip performance, especially with modern, multi-tile processor desig... Semiconductors | https://compbuddey.blogspot.com/2024/05/samsung-foundry-update-2nm-unveil-in_1.html){kind=link}
![](mailto:?subject=Samsung Foundry Update: 2nm Unveil in June, Second-Gen SF3 3nm Hits Production This Year <p align="center"><a href="https://www.anandtech.com/show/21377/samsung-foundry-update-2nm-unveil-in-june-2nd-gen-3nm-hits-production-this-year"><img src="https://images.anandtech.com/doci/21377/samsung-foundry-wafer-semiconductor-678-1_575px.jpg" alt="" /></a></p><p><p>As part of Samsung's Q1 earnings announcement, the company has outlined some of its foundry unit's key plans for the rest of the year. The company has confirmed that it remains on track to meeting its goal of starting mass production of chips on its SF3 (3 nm-class, 2nd Generation) technology in the second half of the year. Meanwhile in June, Samsung Foundry will formally unveil its SF2 (2 nm-class) process technology, which will offer a mix of performance and efficiency enhancements. Finally, the company the company is preparing a variation of its 4 nm-class technology for integration into stacked 3D designs.</p>
<h3>SF2 To Be Unveiled In June</h3>
<p>Samsung plans to disclose key details about its SF2 fabrication technology at the VLSI Symposium 2024 on June 19. This will be the company's second major process node based upon gate-all-around (GAA) multi-bridge channel field-effect transistors (MBCFET). Improving over its predecessor, SF2 will feature a 'unique epitaxial and integration process,' which will give the process node higher performance and lower leakage than traditional FinFET-based nodes (though Samsung isn't disclosing the specific node they're comparing it to).</p>
<p style="text-align: center;"><a href="https://www.anandtech.com/show/21377/samsung-foundry-update-2nm-unveil-in-june-2nd-gen-3nm-hits-production-this-year"><img alt="" src="https://images.anandtech.com/doci/21377/samsung-foundry-roadmap.png" style="width: 100%;" /></a></p>
<p>Samsung says that SF2 increases performance of narrow transistors by 29% for N-type and 46% for P-type, and wide transistors by 11% and 23% respectively. Moreover, it reduces transistor global variation by 26% compared to FinFET technology, and cuts product leakage by approximately 50%. This process also sets the stage for future advancements in technology through enhanced design technology co-optimization (DTCO) collaboration with its customers.</p>
<p>One thing that Samsung has not mentioned in context of SF2 is backside power delivery, so at least for the moment, there is no indication that Samsung will be adopting this next-gen power routing feature for SF2.</p>
<p>Samsung says that the design infrastructure for SF2 – the PDK, EDA tools, and licensed IP – will be finalized in the second quarter of 2024. Once this happens, Samsung's chip development partners will be able to begin designing products for this production node. Meanwhile, Samsung is already working with Arm to co-optimize Arm's Cortex cores for the SF2 process.</p>
<h3>SF3: On Track for 2H 2024</h3>
<p>As the first fab to introduce a GAAFET-based node, Samsung has been on the cutting edge of chip construction. At the same time, however, that has also meant that they're the first fab to encounter and solve the inevitable teething issues that come with such a major transistor design change. Consequently, while Samsung's first-generation SF3E process technology has been in production for a little less than two years now, the only publicly-disclosed chips made on the process so far have been relatively small cryptocurrency mining chips – exactly the kind of pipecleaner parts that do well on a new process node.</p>
<p>But with that experience in hand, Samsung is preparing to move on to making bigger and better chips with GAAFETs. As part of their earnings announcements, the company has confirmed that their updated SF3 node, which was introduced last year, remains on schedule to enter production in the second half of 2024.</p>
<p align="center"><a href="https://www.anandtech.com/show/21377/samsung-foundry-update-2nm-unveil-in-june-2nd-gen-3nm-hits-production-this-year"><img alt="" src="https://images.anandtech.com/doci/21377/Samsung_Q1_Foundry.png" style="width: 100%;" /></a></p>
<p>A more mature product from the get-go, SF3 is being prepared to be used for building larger processors, including datacenter products. Compared to its direct predecessor, SF4, SF3 promises a 22% performance boost at the same power and transistor count, or a 34% lower power at the same frequency and complexity, as well as a 21% logic area reduction. In general, Samsung pins a lot of hopes on this technology, as it's this generation of their 3nm-class technology that is poised to compete against TSMC's N3B and N3E nodes.</p>
<h3>SF4: Ready for 3D Stacking</h3>
<p>Finally, Samsung is also preparing a variant of their final FinFET technology node, SF4, for use in 3D chiplet stacking. As transistor density improvements have continued to slow, 3D chip stacking has emerged as a way to keep boosting overall chip performance, especially with modern, multi-tile processor desig... Semiconductors&body=https://compbuddey.blogspot.com/2024/05/samsung-foundry-update-2nm-unveil-in_1.html){kind=link}
Posted by The Techinical Support
Kioxia Demonstrates Optical Interface SSDs for Data Centers 
A few years back, the Japanese government's New Energy and Industrial Technology Development Organization (NEDO ) allocated funding for the development of green datacenter technologies. With the aim to obtain up to 40% savings in overall power consumption, several Japanese companies have been developing an optical interface for their enterprise SSDs. And at this year's FMS, Kioxia had their optical interface on display.
For this demonstration, Kioxia took its existing CM7 enterprise SSD and created an optical interface for it. A PCIe card with on-board optics developed by Kyocera is installed in the server slot. An optical interface allows data transfer over long distances (it was 40m in the demo, but Kioxia promises lengths of up to 100m for the cable in the future). This allows the storage to be kept in a separate room with minimal cooling requirements compared to the rack with the CPUs and GPUs. Disaggregation of different server components will become an option as very high throughput interfaces such as PCIe 7.0 (with 128 GT/s rates) become available.
The demonstration of the optical SSD showed a slight loss in IOPS performance, but a significant advantage in the latency metric over the shipping enterprise SSD behind a copper network link. Obviously, there are advantages in wiring requirements and signal integrity maintenance with optical links.
Being a proof-of-concept demonstration, we do see the requirement for an industry-standard approach if this were to gain adoption among different datacenter vendors. The PCI-SIG optical workgroup will need to get its act together soon to create a standards-based approach to this problem.
Storage
Western Digital Introduces 4 TB microSDUC, 8 TB SDUC, and 16 TB External SSDs 
Western Digital's BiCS8 218-layer 3D NAND is being put to good use in a wide range of client and enterprise platforms, including WD's upcoming Gen 5 client SSDs and 128 TB-class datacenter SSD. On the external storage front, the company demonstrated four different products: for card-based media, 4 TB microSDUC and 8 TB SDUC cards with UHS-I speeds, and on the portable SSD front we had two 16 TB drives. One will be a SanDisk Desk Drive with external power, and the other in the SanDisk Extreme Pro housing with a lanyard opening in the case.
All of these are using BiCS8 QLC NAND, though I did hear booth talk (as I was taking leave) that they were not supposed to divulge the use of QLC in these products. The 4 TB microSDUC and 8 TB SDUC cards are rated for UHS-I speeds. They are being marketed under the SanDisk Ultra branding.
The SanDisk Desk Drive is an external SSD with a 18W power adapter, and it has been in the market for a few months now. Initially launched in capacities up to 8 TB, Western Digital had promised a 16 TB version before the end of the year. It appears that the product is coming to retail quite soon. One aspect to note is that this drive has been using TLC for the SKUs that are currently in the market, so it appears unlikely that the 16 TB version would be QLC. The units (at least up to the 8 TB capacity point) come with two SN850XE drives. Given the recent introduction of the 8 TB SN850X, an 'E' version with tweaked firmware is likely to be present in the 16 TB Desk Drive.
The 16 TB portable SSD in the SanDisk Extreme housing was a technology demonstration. It is definitely the highest capacity bus-powered portable SSD demonstrated by any vendor at any trade show thus far. Given the 16 TB Desk Drive's imminent market introduction, it is just a matter of time before the technology demonstration of the bus-powered version becomes a retail reality.
Storage
Kioxia Demonstrates Optical Interface SSDs for Data Centers
A few years back, the Japanese government's New Energy and Industrial Technology Development Organization (NEDO ) allocated funding for the development of green datacenter technologies. With the aim to obtain up to 40% savings in overall power consumption, several Japanese companies have been developing an optical interface for their enterprise SSDs. And at this year's FMS, Kioxia had their optical interface on display.
For this demonstration, Kioxia took its existing CM7 enterprise SSD and created an optical interface for it. A PCIe card with on-board optics developed by Kyocera is installed in the server slot. An optical interface allows data transfer over long distances (it was 40m in the demo, but Kioxia promises lengths of up to 100m for the cable in the future). This allows the storage to be kept in a separate room with minimal cooling requirements compared to the rack with the CPUs and GPUs. Disaggregation of different server components will become an option as very high throughput interfaces such as PCIe 7.0 (with 128 GT/s rates) become available.
The demonstration of the optical SSD showed a slight loss in IOPS performance, but a significant advantage in the latency metric over the shipping enterprise SSD behind a copper network link. Obviously, there are advantages in wiring requirements and signal integrity maintenance with optical links.
Being a proof-of-concept demonstration, we do see the requirement for an industry-standard approach if this were to gain adoption among different datacenter vendors. The PCI-SIG optical workgroup will need to get its act together soon to create a standards-based approach to this problem.
Storage
Western Digital Introduces 4 TB microSDUC, 8 TB SDUC, and 16 TB External SSDs
Western Digital's BiCS8 218-layer 3D NAND is being put to good use in a wide range of client and enterprise platforms, including WD's upcoming Gen 5 client SSDs and 128 TB-class datacenter SSD. On the external storage front, the company demonstrated four different products: for card-based media, 4 TB microSDUC and 8 TB SDUC cards with UHS-I speeds, and on the portable SSD front we had two 16 TB drives. One will be a SanDisk Desk Drive with external power, and the other in the SanDisk Extreme Pro housing with a lanyard opening in the case.
All of these are using BiCS8 QLC NAND, though I did hear booth talk (as I was taking leave) that they were not supposed to divulge the use of QLC in these products. The 4 TB microSDUC and 8 TB SDUC cards are rated for UHS-I speeds. They are being marketed under the SanDisk Ultra branding.
The SanDisk Desk Drive is an external SSD with a 18W power adapter, and it has been in the market for a few months now. Initially launched in capacities up to 8 TB, Western Digital had promised a 16 TB version before the end of the year. It appears that the product is coming to retail quite soon. One aspect to note is that this drive has been using TLC for the SKUs that are currently in the market, so it appears unlikely that the 16 TB version would be QLC. The units (at least up to the 8 TB capacity point) come with two SN850XE drives. Given the recent introduction of the 8 TB SN850X, an 'E' version with tweaked firmware is likely to be present in the 16 TB Desk Drive.
The 16 TB portable SSD in the SanDisk Extreme housing was a technology demonstration. It is definitely the highest capacity bus-powered portable SSD demonstrated by any vendor at any trade show thus far. Given the 16 TB Desk Drive's imminent market introduction, it is just a matter of time before the technology demonstration of the bus-powered version becomes a retail reality.
Storage
The Endorfy Fortis 5 Dual Fan CPU Cooler Review: Towering Value Standard CPU coolers, while adequate for managing basic thermal loads, often fall short in terms of noise reduction and superior cooling efficiency. This limitation drives advanced users and system builders to seek aftermarket solutions tailored to their specific needs. The high-end aftermarket cooler market is highly competitive, with manufacturers striving to offer products with exceptional performance.
Endorfy, previously known as SilentiumPC, is a Polish manufacturer that has undergone a significant transformation to expand its presence in global markets. The brand is known for delivering high-performance cooling solutions with a strong focus on balancing efficiency and affordability. By rebranding as Endorfy, the company aims to enter premium market segments while continuing to offer reliable, high-quality cooling products.
SilentiumPC became very popular in the value/mainstream segments of the PC market with their products, the spearhead of which probably was the Fera 5 cooler that we reviewed a little over two years ago and had a remarkable value for money. Today’s review places Endorfy’s largest CPU cooler, the Fortis 5 Dual Fan, on our laboratory test bench. The Fortis 5 is the largest CPU air cooler the company currently offers and is significantly more expensive than the Fera 5, yet it still is a single-tower cooler that strives to strike a balance between value, compatibility, and performance.
Cases/Cooling/PSUs
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Kioxia Demonstrates Optical Interface SSDs for Data Centers
A few years back, the Japanese government's New Energy and Industrial Technology Development Organization (NEDO ) allocated funding for the development of green datacenter technologies. With the aim to obtain up to 40% savings in overall power consumption, several Japanese companies have been developing an optical interface for their enterprise SSDs. And at this year's FMS, Kioxia had their optical interface on display.
For this demonstration, Kioxia took its existing CM7 enterprise SSD and created an optical interface for it. A PCIe card with on-board optics developed by Kyocera is installed in the server slot. An optical interface allows data transfer over long distances (it was 40m in the demo, but Kioxia promises lengths of up to 100m for the cable in the future). This allows the storage to be kept in a separate room with minimal cooling requirements compared to the rack with the CPUs and GPUs. Disaggregation of different server components will become an option as very high throughput interfaces such as PCIe 7.0 (with 128 GT/s rates) become available.
The demonstration of the optical SSD showed a slight loss in IOPS performance, but a significant advantage in the latency metric over the shipping enterprise SSD behind a copper network link. Obviously, there are advantages in wiring requirements and signal integrity maintenance with optical links.
Being a proof-of-concept demonstration, we do see the requirement for an industry-standard approach if this were to gain adoption among different datacenter vendors. The PCI-SIG optical workgroup will need to get its act together soon to create a standards-based approach to this problem.
Storage
Western Digital Introduces 4 TB microSDUC, 8 TB SDUC, and 16 TB External SSDs
Western Digital's BiCS8 218-layer 3D NAND is being put to good use in a wide range of client and enterprise platforms, including WD's upcoming Gen 5 client SSDs and 128 TB-class datacenter SSD. On the external storage front, the company demonstrated four different products: for card-based media, 4 TB microSDUC and 8 TB SDUC cards with UHS-I speeds, and on the portable SSD front we had two 16 TB drives. One will be a SanDisk Desk Drive with external power, and the other in the SanDisk Extreme Pro housing with a lanyard opening in the case.
All of these are using BiCS8 QLC NAND, though I did hear booth talk (as I was taking leave) that they were not supposed to divulge the use of QLC in these products. The 4 TB microSDUC and 8 TB SDUC cards are rated for UHS-I speeds. They are being marketed under the SanDisk Ultra branding.
The SanDisk Desk Drive is an external SSD with a 18W power adapter, and it has been in the market for a few months now. Initially launched in capacities up to 8 TB, Western Digital had promised a 16 TB version before the end of the year. It appears that the product is coming to retail quite soon. One aspect to note is that this drive has been using TLC for the SKUs that are currently in the market, so it appears unlikely that the 16 TB version would be QLC. The units (at least up to the 8 TB capacity point) come with two SN850XE drives. Given the recent introduction of the 8 TB SN850X, an 'E' version with tweaked firmware is likely to be present in the 16 TB Desk Drive.
The 16 TB portable SSD in the SanDisk Extreme housing was a technology demonstration. It is definitely the highest capacity bus-powered portable SSD demonstrated by any vendor at any trade show thus far. Given the 16 TB Desk Drive's imminent market introduction, it is just a matter of time before the technology demonstration of the bus-powered version becomes a retail reality.
Storage
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